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FDC6305N FDC6305N onsemi FDC6305N-D.PDF Description: MOSFET 2N-CH 20V 2.7A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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19+1.12 EUR
50+0.82 EUR
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FDC6306P FDC6306P onsemi fdc6306p-d.pdf Description: MOSFET 2P-CH 20V 1.9A SSOT6
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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13+1.65 EUR
21+1.02 EUR
100+0.67 EUR
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FDC6333C FDC6333C onsemi FDC6333C-D.PDF Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
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FDC634P FDC634P onsemi fdc634p-d.pdf Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC653N FDC653N onsemi fdc653n-d.pdf Description: MOSFET N-CH 30V 5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6561AN FDC6561AN onsemi fdc6561an-d.pdf Description: MOSFET 2N-CH 30V 2.5A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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20+1.06 EUR
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FDD6690A FDD6690A onsemi fdd6690a-d.pdf Description: MOSFET N-CH 30V 12A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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FDG6301N FDG6301N onsemi fdg6301n-d.pdf Description: MOSFET 2N-CH 25V 0.22A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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32+0.67 EUR
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FDG6303N FDG6303N onsemi fdg6303n-d.pdf Description: MOSFET 2N-CH 25V 500MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6304P FDG6304P onsemi fdg6304p-d.pdf Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 449 Stücke:
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FDG6322C FDG6322C onsemi fdg6322c-d.pdf Description: MOSFET N/P-CH 25V 0.22A SC88
Part Status: Active
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDG6323L FDG6323L onsemi fdg6323l-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC88
Input Type: Non-Inverting
Rds On (Typ): 410mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Ratio - Input:Output: 1:1
Current - Output (Max): 600mA
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
Produkt ist nicht verfügbar
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FDLL300 FDLL300 onsemi ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 125V 200MA LL34
Produkt ist nicht verfügbar
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FDN306P FDN306P onsemi FDN306P-D.pdf Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 19533 Stücke:
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FDN336P FDN336P onsemi fdn336p-d.pdf Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FDN339AN FDN339AN onsemi FDN339AN-D.PDF Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
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FDN357N FDN357N onsemi fdn357n-d.pdf Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
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22+0.95 EUR
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FDN358P FDN358P onsemi FDN358P-D.PDF Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
Produkt ist nicht verfügbar
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FDN359AN FDN359AN onsemi fdn359an-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 15044 Stücke:
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FDN360P FDN360P onsemi fdn360p-d.pdf Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
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27+0.79 EUR
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FDN5618P FDN5618P onsemi fdn5618p-d.pdf Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
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24+0.89 EUR
100+0.57 EUR
500+0.44 EUR
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FDN5630 FDN5630 onsemi fdn5630-d.pdf Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
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FDS2572 FDS2572 onsemi FAIRS45105-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 4.9A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
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FDS3672 FDS3672 onsemi fds3672-d.pdf Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FDS4465 FDS4465 onsemi fds4465-d.pdf Description: MOSFET P-CH 20V 13.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FDS4935A FDS4935A onsemi fds4935a-d.pdf Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS5670 FDS5670 onsemi fds5670-d.pdf Description: MOSFET N-CH 60V 10A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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FDS6690A FDS6690A onsemi fds6690a-d.pdf Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
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FDS6875 FDS6875 onsemi fds6875-d.pdf Description: MOSFET 2P-CH 20V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FDS6898A FDS6898A onsemi FDS6898A.pdf Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FDS6912A FDS6912A onsemi FDS6912A-D.PDF Description: MOSFET 2N-CH 30V 6A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FDS6975 FDS6975 onsemi FDS6975-D.PDF Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 398 Stücke:
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FDS6990A FDS6990A onsemi fds6990a-d.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Produkt ist nicht verfügbar
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FDS9926A FDS9926A onsemi fds9926a-d.pdf Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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FQB34N20TM-AM002 FQB34N20TM-AM002 onsemi fqb34n20-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
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FQB55N10TM FQB55N10TM onsemi FQB55N10-D.pdf Description: MOSFET N-CH 100V 55A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FQD17P06TF FQD17P06TF onsemi Description: MOSFET P-CH 60V 12A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FQD2N80TM FQD2N80TM onsemi fqd2n80-d.pdf Description: MOSFET N-CH 800V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FQT7N10LTF FQT7N10LTF onsemi fqt7n10ltf-d.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
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HUF75645S3ST HUF75645S3ST onsemi FAIRS45737-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 14970 Stücke:
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KSH122TF KSH122TF onsemi KSH122(I).pdf Description: TRANS NPN DARL 100V 8A DPAK
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KST92MTF KST92MTF onsemi DS_488_KST92.pdf Description: TRANS PNP 300V 0.5A SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
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MM74HC164MX MM74HC164MX onsemi MM74HC164-D.PDF Description: IC SR PUSH-PULL 8BIT 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
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MM74HCT04MX MM74HCT04MX onsemi MM74HCT04-D.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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MMBD1403 MMBD1403 onsemi mmbd1405-d.pdf Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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MMBD1504A MMBD1504A onsemi mmbd1501-d.pdf Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
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MMBD1505A MMBD1505A onsemi mmbd1501-d.pdf Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
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MMBFJ112 MMBFJ112 onsemi MMBFJ113-D.PDF Description: JFET N-CH 35V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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NC7NZ34K8X NC7NZ34K8X onsemi nc7nz34-d.pdf Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
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NC7S04P5X NC7S04P5X onsemi NC7S04-D.PDF Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S08P5X NC7S08P5X onsemi ONSM-S-A0003587594-1.pdf?t.download=true&u=5oefqw Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NC7S14P5X NC7S14P5X onsemi nc7s14-d.pdf Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SB3257P6X NC7SB3257P6X onsemi nc7sb3257-d.pdf Description: IC MUX/DEMUX 1 X 2:1 SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
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NC7SP17P5X NC7SP17P5X onsemi nc7sp17-d.pdf Description: IC BUFF 0.9V/3.6V SC-70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: SC-70-5
Part Status: Active
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NC7ST08M5X NC7ST08M5X onsemi NC7ST08-D.PDF Description: IC GATE AND 1CH 2-INP SOT23-5
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: SOT-23-5
Number of Inputs: 2
Current - Output High, Low: 2mA, 2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
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NC7ST08P5X NC7ST08P5X onsemi ONSM-S-A0003591023-1.pdf?t.download=true&u=5oefqw Description: IC GATE AND 1CH 2-INP SC70-5
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: SC-70-5
Number of Inputs: 2
Current - Output High, Low: 2mA, 2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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NC7SU04M5X NC7SU04M5X onsemi NC7SU04-D.PDF Description: IC INVERTER 1CH 1-INP SOT23-5
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NC7SV04P5X NC7SV04P5X onsemi nc7sv04-d.pdf Description: IC INVERTER 1CH 1-INP SC70-5
Current - Quiescent (Max): 900 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: SC-70-5
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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NC7SZ04P5X NC7SZ04P5X onsemi NC7SZ04-D.PDF Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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NC7SZ11P6X NC7SZ11P6X onsemi nc7sz11-d.pdf Description: IC GATE AND 1CH 3-INP SC88
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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FDC6305N FDC6305N-D.PDF
FDC6305N
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 2.7A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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FDC6306P fdc6306p-d.pdf
FDC6306P
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 1.9A SSOT6
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6333C FDC6333C-D.PDF
FDC6333C
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
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FDC634P fdc634p-d.pdf
FDC634P
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC653N fdc653n-d.pdf
FDC653N
Hersteller: onsemi
Description: MOSFET N-CH 30V 5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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FDC6561AN fdc6561an-d.pdf
FDC6561AN
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.5A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
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FDD6690A fdd6690a-d.pdf
FDD6690A
Hersteller: onsemi
Description: MOSFET N-CH 30V 12A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDG6301N fdg6301n-d.pdf
FDG6301N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 61073 Stücke:
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FDG6303N fdg6303n-d.pdf
FDG6303N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 500MA SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 54810 Stücke:
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25+0.86 EUR
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FDG6304P fdg6304p-d.pdf
FDG6304P
Hersteller: onsemi
Description: MOSFET 2P-CH 25V 0.41A SC88
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 449 Stücke:
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FDG6322C fdg6322c-d.pdf
FDG6322C
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.22A SC88
Part Status: Active
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 5836 Stücke:
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FDG6323L fdg6323l-d.pdf
FDG6323L
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SC88
Input Type: Non-Inverting
Rds On (Typ): 410mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Ratio - Input:Output: 1:1
Current - Output (Max): 600mA
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Voltage - Load: 2.5V ~ 8V
Produkt ist nicht verfügbar
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FDLL300 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDLL300
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA LL34
Produkt ist nicht verfügbar
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FDN306P FDN306P-D.pdf
FDN306P
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 19533 Stücke:
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16+1.38 EUR
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FDN336P fdn336p-d.pdf
FDN336P
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 93066 Stücke:
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16+1.36 EUR
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FDN339AN FDN339AN-D.PDF
FDN339AN
Hersteller: onsemi
Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
auf Bestellung 18877 Stücke:
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FDN357N fdn357n-d.pdf
FDN357N
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
auf Bestellung 43537 Stücke:
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14+1.55 EUR
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FDN358P FDN358P-D.PDF
FDN358P
Hersteller: onsemi
Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
Produkt ist nicht verfügbar
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FDN359AN fdn359an-d.pdf
FDN359AN
Hersteller: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 15044 Stücke:
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15+1.46 EUR
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FDN360P fdn360p-d.pdf
FDN360P
Hersteller: onsemi
Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 7698 Stücke:
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17+1.26 EUR
27+0.79 EUR
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FDN5618P fdn5618p-d.pdf
FDN5618P
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 35398 Stücke:
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15+1.44 EUR
24+0.89 EUR
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FDN5630 fdn5630-d.pdf
FDN5630
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 20492 Stücke:
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17+1.24 EUR
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FDS2572 FAIRS45105-1.pdf?t.download=true&u=5oefqw
FDS2572
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.9A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
auf Bestellung 14221 Stücke:
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7+3.36 EUR
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FDS3672 fds3672-d.pdf
FDS3672
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 46375 Stücke:
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6+3.64 EUR
10+2.32 EUR
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FDS4465 fds4465-d.pdf
FDS4465
Hersteller: onsemi
Description: MOSFET P-CH 20V 13.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 7431 Stücke:
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5+4.49 EUR
10+2.87 EUR
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FDS4935A fds4935a-d.pdf
FDS4935A
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2408 Stücke:
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7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
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FDS5670 fds5670-d.pdf
FDS5670
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 20147 Stücke:
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AnzahlPrivatkunde
5+5.02 EUR
10+3.39 EUR
100+2.4 EUR
500+1.94 EUR
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FDS6690A fds6690a-d.pdf
FDS6690A
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
auf Bestellung 1244 Stücke:
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10+2.32 EUR
15+1.45 EUR
100+0.96 EUR
500+0.75 EUR
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FDS6875 fds6875-d.pdf
FDS6875
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2350 Stücke:
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9+2.51 EUR
11+2.06 EUR
100+1.61 EUR
500+1.36 EUR
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FDS6898A FDS6898A.pdf
FDS6898A
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 19890 Stücke:
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7+3.27 EUR
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100+1.38 EUR
500+1.09 EUR
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FDS6912A FDS6912A-D.PDF
FDS6912A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 9029 Stücke:
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10+2.2 EUR
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100+0.9 EUR
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FDS6975 FDS6975-D.PDF
FDS6975
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 398 Stücke:
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6+3.77 EUR
10+2.4 EUR
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FDS6990A fds6990a-d.pdf
FDS6990A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Produkt ist nicht verfügbar
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FDS9926A fds9926a-d.pdf
FDS9926A
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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FQB34N20TM-AM002 fqb34n20-d.pdf
FQB34N20TM-AM002
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
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FQB55N10TM FQB55N10-D.pdf
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 6359 Stücke:
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FQD17P06TF
FQD17P06TF
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FQD2N80TM fqd2n80-d.pdf
FQD2N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FQT7N10LTF fqt7n10ltf-d.pdf
FQT7N10LTF
Hersteller: onsemi
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 2 Stücke:
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HUF75645S3ST FAIRS45737-1.pdf?t.download=true&u=5oefqw
HUF75645S3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 14970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.07 EUR
10+5.09 EUR
100+4.13 EUR
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KSH122TF KSH122(I).pdf
KSH122TF
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Produkt ist nicht verfügbar
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KST92MTF DS_488_KST92.pdf
KST92MTF
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
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MM74HC164MX MM74HC164-D.PDF
MM74HC164MX
Hersteller: onsemi
Description: IC SR PUSH-PULL 8BIT 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7326 Stücke:
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28+0.77 EUR
40+0.54 EUR
45+0.48 EUR
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MM74HCT04MX MM74HCT04-D.pdf
MM74HCT04MX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 3157 Stücke:
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36+0.58 EUR
52+0.4 EUR
59+0.36 EUR
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MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: onsemi
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 51515 Stücke:
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39+0.55 EUR
63+0.33 EUR
101+0.21 EUR
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MMBD1504A mmbd1501-d.pdf
MMBD1504A
Hersteller: onsemi
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Produkt ist nicht verfügbar
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MMBD1505A mmbd1501-d.pdf
MMBD1505A
Hersteller: onsemi
Description: DIODE ARR GP 200V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 14229 Stücke:
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32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
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MMBFJ112 MMBFJ113-D.PDF
MMBFJ112
Hersteller: onsemi
Description: JFET N-CH 35V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 4391 Stücke:
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24+0.9 EUR
38+0.56 EUR
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NC7NZ34K8X nc7nz34-d.pdf
NC7NZ34K8X
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
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NC7S04P5X NC7S04-D.PDF
NC7S04P5X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 51592 Stücke:
Lieferzeit 10-14 Tag (e)
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125+0.17 EUR
228+0.092 EUR
258+0.081 EUR
310+0.068 EUR
342+0.062 EUR
500+0.057 EUR
1000+0.055 EUR
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NC7S08P5X ONSM-S-A0003587594-1.pdf?t.download=true&u=5oefqw
NC7S08P5X
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S14P5X nc7s14-d.pdf
NC7S14P5X
Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+0.17 EUR
228+0.092 EUR
258+0.081 EUR
310+0.068 EUR
342+0.062 EUR
500+0.057 EUR
1000+0.055 EUR
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NC7SB3257P6X nc7sb3257-d.pdf
NC7SB3257P6X
Hersteller: onsemi
Description: IC MUX/DEMUX 1 X 2:1 SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 941 Stücke:
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AnzahlPrivatkunde
12+1.88 EUR
19+1.13 EUR
25+0.94 EUR
100+0.71 EUR
250+0.61 EUR
500+0.55 EUR
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NC7SP17P5X nc7sp17-d.pdf
NC7SP17P5X
Hersteller: onsemi
Description: IC BUFF 0.9V/3.6V SC-70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: SC-70-5
Part Status: Active
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
94+0.23 EUR
107+0.2 EUR
125+0.17 EUR
250+0.15 EUR
500+0.14 EUR
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NC7ST08M5X NC7ST08-D.PDF
NC7ST08M5X
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SOT23-5
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: SOT-23-5
Number of Inputs: 2
Current - Output High, Low: 2mA, 2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
auf Bestellung 1869 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
223+0.094 EUR
256+0.082 EUR
307+0.068 EUR
338+0.062 EUR
500+0.058 EUR
1000+0.055 EUR
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NC7ST08P5X ONSM-S-A0003591023-1.pdf?t.download=true&u=5oefqw
NC7ST08P5X
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: SC-70-5
Number of Inputs: 2
Current - Output High, Low: 2mA, 2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 33753 Stücke:
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AnzahlPrivatkunde
36+0.58 EUR
65+0.32 EUR
82+0.26 EUR
111+0.19 EUR
250+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
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NC7SU04M5X NC7SU04-D.PDF
NC7SU04M5X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
auf Bestellung 18254 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
197+0.11 EUR
228+0.092 EUR
271+0.077 EUR
298+0.07 EUR
500+0.065 EUR
1000+0.062 EUR
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NC7SV04P5X nc7sv04-d.pdf
NC7SV04P5X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SC70-5
Current - Quiescent (Max): 900 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: SC-70-5
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 3535 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
43+0.5 EUR
52+0.4 EUR
100+0.3 EUR
250+0.25 EUR
500+0.23 EUR
1000+0.19 EUR
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NC7SZ04P5X NC7SZ04-D.PDF
NC7SZ04P5X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 1126 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
205+0.1 EUR
234+0.089 EUR
280+0.075 EUR
308+0.068 EUR
500+0.064 EUR
1000+0.061 EUR
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NC7SZ11P6X nc7sz11-d.pdf
NC7SZ11P6X
Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 29606 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
223+0.094 EUR
256+0.082 EUR
305+0.069 EUR
337+0.062 EUR
500+0.058 EUR
1000+0.055 EUR
Mindestbestellmenge: 112 Stücke
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