Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDS6898A | onsemi |
Description: MOSFET 2N-CH 20V 9.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6912A | onsemi |
Description: MOSFET 2N-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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FDS6975 | onsemi |
Description: MOSFET 2P-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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FDS6990A | onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS9926A | onsemi |
Description: MOSFET 2N-CH 20V 6.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 37000 Stücke: Lieferzeit 21-28 Tag (e) |
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FGH50N6S2D | onsemi |
Description: IGBT 600V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 390V, 30A, 3Ohm, 15V Gate Charge: 70 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 463 W |
Produkt ist nicht verfügbar |
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FQB34N20TM-AM002 | onsemi |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB55N10TM | onsemi | Description: MOSFET N-CH 100V 55A D2PAK |
Produkt ist nicht verfügbar |
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FQD17P06TF | onsemi |
Description: MOSFET P-CH 60V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD2N80TM | onsemi |
Description: MOSFET N-CH 800V 1.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP17P06 | onsemi |
Description: MOSFET P-CH 60V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
auf Bestellung 1145 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP27P06 | onsemi |
Description: MOSFET P-CH 60V 27A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 814 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP46N15 | onsemi |
Description: MOSFET N-CH 150V 45.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP50N06 | onsemi |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQT7N10LTF | onsemi |
Description: MOSFET N-CH 100V 1.7A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQU17P06TU | onsemi |
Description: MOSFET P-CH 60V 12A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
auf Bestellung 10010 Stücke: Lieferzeit 21-28 Tag (e) |
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FSA3157P6X | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Obsolete Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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FSAM30SH60A | onsemi |
Description: SMART POWER MODULE 30A SPM32-AA Packaging: Tube Package / Case: 32-PowerDIP Module (1.370", 34.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 30 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FSD200 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 65% Frequency - Switching: 134kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6V ~ 10V Supplier Device Package: 7-PDIP Fault Protection: Current Limiting, Over Load, Over Temperature Voltage - Start Up: 7 V Part Status: Obsolete Power (Watts): 7 W |
Produkt ist nicht verfügbar |
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HGTG10N120BND | onsemi |
Description: IGBT NPT 1200V 35A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/165ns Switching Energy: 850µJ (on), 800µJ (off) Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
Produkt ist nicht verfügbar |
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HGTG20N60B3D | onsemi |
Description: IGBT 600V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247-3 Switching Energy: 475µJ (on), 1.05mJ (off) Gate Charge: 80 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 165 W |
Produkt ist nicht verfügbar |
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HGTG30N60A4D | onsemi |
Description: IGBT 600V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 280µJ (on), 240µJ (off) Test Condition: 390V, 30A, 3Ohm, 15V Gate Charge: 225 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 463 W |
Produkt ist nicht verfügbar |
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HGTG30N60B3D | onsemi |
Description: IGBT 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 36ns/137ns Switching Energy: 550µJ (on), 680µJ (off) Test Condition: 480V, 30A, 3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 208 W |
Produkt ist nicht verfügbar |
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HMHAA280R1 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.4V (Max) Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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HUF75321P3 | onsemi | Description: MOSFET N-CH 55V 35A TO220-3 |
auf Bestellung 54 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75339P3 | onsemi |
Description: MOSFET N-CH 55V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 790 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75344G3 | onsemi |
Description: MOSFET N-CH 55V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 233 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75639P3 | onsemi |
Description: MOSFET N-CH 100V 56A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 442 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75645P3 | onsemi |
Description: MOSFET N-CH 100V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V |
auf Bestellung 1488 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75645S3ST | onsemi |
Description: MOSFET N-CH 100V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V |
auf Bestellung 18400 Stücke: Lieferzeit 21-28 Tag (e) |
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ISL9R1560P2 | onsemi |
Description: DIODE GEN PURP 600V 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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ISL9R3060G2 | onsemi |
Description: DIODE GEN PURP 600V 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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ISL9R3060P2 | onsemi |
Description: DIODE GEN PURP 600V 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
auf Bestellung 212 Stücke: Lieferzeit 21-28 Tag (e) |
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ISL9R860P2 | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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KSE44H11TU | onsemi |
Description: TRANS NPN 80V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.67 W |
Produkt ist nicht verfügbar |
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KSH122TF | onsemi | Description: TRANS NPN DARL 100V 8A DPAK |
Produkt ist nicht verfügbar |
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KST42MTF | onsemi |
Description: TRANS NPN 300V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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KST92MTF | onsemi |
Description: TRANS PNP 300V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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MB4S | onsemi |
Description: BRIDGE RECT 1P 400V 500MA 4SOIC Packaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 62716 Stücke: Lieferzeit 21-28 Tag (e) |
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MBRS340 | onsemi |
Description: DIODE SCHOTTKY 40V 4A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
Produkt ist nicht verfügbar |
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MM74HC164MX | onsemi |
Description: IC REGISTER SER/PAR I/O 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 14-SOIC Part Status: Active Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
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MM74HC4052MX | onsemi |
Description: IC SWITCH SP4T X 2 100OHM 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 35MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 15Ohm Switch Time (Ton, Toff) (Max): 41ns, 32ns Channel Capacitance (CS(off), CD(off)): 5pF, 45pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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MM74HCT04MX | onsemi |
Description: IC INVERTER 6CH 1-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4.8mA, 4.8mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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MM74HCU04MX | onsemi |
Description: IC INVERTER 6CH 1-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 7.8mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.7V ~ 4.8V Input Logic Level - Low: 0.3V ~ 1.1V Max Propagation Delay @ V, Max CL: 14ns @ 6V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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MMBD1403 | onsemi |
Description: DIODE ARRAY GP 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
auf Bestellung 111000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMBD1504A | onsemi |
Description: DIODE ARRAY GP 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V |
auf Bestellung 252000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMBD1505A | onsemi |
Description: DIODE ARRAY GP 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V |
Produkt ist nicht verfügbar |
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MMBD4148se | onsemi |
Description: DIODE ARRAY GP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
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MMBFJ112 | onsemi |
Description: JFET N-CH 35V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 350 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7NZ34K8X | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NC7S04P5X | onsemi |
Description: IC INVERTER 1CH 1-INP SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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NC7S08P5X | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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NC7S14P5X | onsemi |
Description: IC INVERT SCHMITT 1CH 1IN SC70 Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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NC7SB3257P6X | onsemi | Description: IC MUX/DEMUX 1 X 2:1 SC88 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SP17P5X | onsemi |
Description: IC BUF NON-INVERT 3.6V SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 2.6mA, 2.6mA Supplier Device Package: SC-70-5 Part Status: Active |
Produkt ist nicht verfügbar |
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NC7ST08M5X | onsemi |
Description: IC GATE AND 1CH 2-INP SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 2mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7ST08P5X | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 2mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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NC7SZ04P5X | onsemi |
Description: IC INVERTER 1CH 1-INP SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: SC-70-5 Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SZ11P6X | onsemi | Description: IC GATE AND 1CH 3-INP SC88 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SZ157P6X | onsemi |
Description: IC MULTIPLEXER 1 X 2:1 SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Circuit: 1 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: SC-88 (SC-70-6) Part Status: Obsolete |
Produkt ist nicht verfügbar |
FDS6898A |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.05 EUR |
5000+ | 1 EUR |
FDS6912A |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FDS6975 |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FDS6990A |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS9926A |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.63 EUR |
5000+ | 0.6 EUR |
12500+ | 0.55 EUR |
FGH50N6S2D |
Hersteller: onsemi
Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 70 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 70 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
Produkt ist nicht verfügbar
FQB34N20TM-AM002 |
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
FQD17P06TF |
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N80TM |
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 800V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
FQP17P06 |
Hersteller: onsemi
Description: MOSFET P-CH 60V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 1145 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.45 EUR |
50+ | 3.57 EUR |
100+ | 2.94 EUR |
500+ | 2.49 EUR |
1000+ | 2.11 EUR |
FQP27P06 |
Hersteller: onsemi
Description: MOSFET P-CH 60V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET P-CH 60V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 814 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 5.04 EUR |
50+ | 4.06 EUR |
100+ | 3.34 EUR |
500+ | 2.83 EUR |
FQP46N15 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 45.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Description: MOSFET N-CH 150V 45.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
FQP50N06 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Produkt ist nicht verfügbar
FQT7N10LTF |
Hersteller: onsemi
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Produkt ist nicht verfügbar
FQU17P06TU |
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 10010 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.68 EUR |
12+ | 2.21 EUR |
100+ | 1.72 EUR |
500+ | 1.46 EUR |
1000+ | 1.19 EUR |
2000+ | 1.12 EUR |
5000+ | 1.06 EUR |
10000+ | 1.01 EUR |
FSA3157P6X |
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
FSAM30SH60A |
Hersteller: onsemi
Description: SMART POWER MODULE 30A SPM32-AA
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Description: SMART POWER MODULE 30A SPM32-AA
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
FSD200 |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 65%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 65%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
HGTG10N120BND |
Hersteller: onsemi
Description: IGBT NPT 1200V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 850µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Description: IGBT NPT 1200V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 850µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
HGTG20N60B3D |
Hersteller: onsemi
Description: IGBT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Description: IGBT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Produkt ist nicht verfügbar
HGTG30N60A4D |
Hersteller: onsemi
Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 280µJ (on), 240µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 280µJ (on), 240µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
Produkt ist nicht verfügbar
HGTG30N60B3D |
Hersteller: onsemi
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
Produkt ist nicht verfügbar
HMHAA280R1 |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
HUF75321P3 |
Hersteller: onsemi
Description: MOSFET N-CH 55V 35A TO220-3
Description: MOSFET N-CH 55V 35A TO220-3
auf Bestellung 54 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.95 EUR |
10+ | 3.53 EUR |
HUF75339P3 |
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 790 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.65 EUR |
50+ | 3.74 EUR |
100+ | 3.07 EUR |
500+ | 2.6 EUR |
HUF75344G3 |
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 233 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.05 EUR |
30+ | 7.16 EUR |
120+ | 6.14 EUR |
HUF75639P3 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 442 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.98 EUR |
50+ | 4.8 EUR |
100+ | 3.95 EUR |
HUF75645P3 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 1488 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.47 EUR |
50+ | 5.14 EUR |
100+ | 4.41 EUR |
500+ | 3.92 EUR |
1000+ | 3.35 EUR |
HUF75645S3ST |
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 18400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 4.62 EUR |
1600+ | 3.96 EUR |
2400+ | 3.72 EUR |
5600+ | 3.55 EUR |
ISL9R1560P2 |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
ISL9R3060G2 |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
ISL9R3060P2 |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 212 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.66 EUR |
50+ | 5.34 EUR |
100+ | 4.4 EUR |
ISL9R860P2 |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
KSE44H11TU |
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.67 W
Description: TRANS NPN 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.67 W
Produkt ist nicht verfügbar
KST42MTF |
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 350 mW
Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
KST92MTF |
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 250 mW
Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
MB4S |
Hersteller: onsemi
Description: BRIDGE RECT 1P 400V 500MA 4SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 500MA 4SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 62716 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.31 EUR |
9000+ | 0.28 EUR |
30000+ | 0.27 EUR |
MBRS340 |
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
MM74HC164MX |
Hersteller: onsemi
Description: IC REGISTER SER/PAR I/O 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
Description: IC REGISTER SER/PAR I/O 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
MM74HC4052MX |
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
MM74HCT04MX |
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.43 EUR |
MM74HCU04MX |
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 7.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 14ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 7.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 14ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.42 EUR |
5000+ | 0.39 EUR |
MMBD1403 |
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 111000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.11 EUR |
75000+ | 0.096 EUR |
MMBD1504A |
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 252000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
9000+ | 0.14 EUR |
75000+ | 0.11 EUR |
MMBD1505A |
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Produkt ist nicht verfügbar
MMBD4148se |
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
MMBFJ112 |
Hersteller: onsemi
Description: JFET N-CH 35V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 87000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
9000+ | 0.2 EUR |
75000+ | 0.17 EUR |
NC7NZ34K8X |
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
NC7S04P5X |
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
NC7S08P5X |
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
NC7S14P5X |
Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SC70
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1IN SC70
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
NC7SB3257P6X |
Hersteller: onsemi
Description: IC MUX/DEMUX 1 X 2:1 SC88
Description: IC MUX/DEMUX 1 X 2:1 SC88
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)NC7SP17P5X |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: SC-70-5
Part Status: Active
Description: IC BUF NON-INVERT 3.6V SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: SC-70-5
Part Status: Active
Produkt ist nicht verfügbar
NC7ST08M5X |
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.13 EUR |
15000+ | 0.11 EUR |
NC7ST08P5X |
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
NC7SZ04P5X |
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
6000+ | 0.12 EUR |
15000+ | 0.1 EUR |
30000+ | 0.094 EUR |
NC7SZ11P6X |
Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Description: IC GATE AND 1CH 3-INP SC88
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)NC7SZ157P6X |
Hersteller: onsemi
Description: IC MULTIPLEXER 1 X 2:1 SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Obsolete
Description: IC MULTIPLEXER 1 X 2:1 SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Obsolete
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