Foto | Bezeichnung | Hersteller | Beschreibung |
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MUN2212T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN2213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN2214T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8370 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN2233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MUN5111DW1T1G | ONSEMI |
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auf Bestellung 1050 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5111T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MUN5112DW1T1G | ONSEMI |
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auf Bestellung 2499 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5113DW1T1G | ONSEMI |
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auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5114DW1T1G | ONSEMI |
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auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5115DW1T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MUN5131DW1T1G | ONSEMI |
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auf Bestellung 770 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5133DW1T1G | ONSEMI |
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auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5135DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MUN5211DW1T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Current gain: 60 Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 544 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5213DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Current gain: 140 Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 825 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5213T1G | ONSEMI |
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auf Bestellung 2054 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5214DW1T1G | ONSEMI |
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auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5215T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5232DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 521 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5233DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V Current gain: 80...200 Collector current: 0.1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V Current gain: 200 Collector current: 0.1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3192 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5235DW1T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MUN5235T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5311DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ Base resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2948 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5312DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUN5313DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUN5314DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 47kΩ Base resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5668 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5316DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MUN5333DW1T1G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5335DW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5995 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1100ERLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 35A Case: CASE59 Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4450 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR120RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Max. forward voltage: 0.875V Reverse recovery time: 35ns Max. load current: 1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1294 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1520G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns Max. load current: 30A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 220 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1540G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 60ns Max. load current: 30A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1560G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 515 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR160G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Max. forward voltage: 1.25V Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR160RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel Case: DO41 Max. forward voltage: 1.25V Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 473 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1610CTG | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MUR1615CTG | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUR1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 16A Max. forward impulse current: 100A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR1620CTRG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Max. load current: 16A Heatsink thickness: 1.15...1.39mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUR1640CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 16A Max. forward impulse current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUR1660CTG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. load current: 16A Heatsink thickness: 1.15...1.39mm Max. forward impulse current: 100A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR4100EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns Features of semiconductor devices: ultrafast switching Case: CASE267-05 Semiconductor structure: single diode Mounting: THT Type of diode: rectifying Reverse recovery time: 75ns Max. forward voltage: 1.85V Load current: 4A Max. forward impulse current: 70A Max. off-state voltage: 1kV Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 511 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR4100ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUR420G | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1058 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR420RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1707 Stücke: Lieferzeit 7-14 Tag (e) |
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mur460rlg | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 110A Case: CASE267-05 Max. forward voltage: 1.28V Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR8100EG | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MUR820G | ONSEMI |
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auf Bestellung 822 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR860G | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Reverse recovery time: 50ns Heatsink thickness: 1.14...1.39mm Max. load current: 16A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 317 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR880EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.8V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA110T3G | ONSEMI |
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auf Bestellung 3781 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA120T3G | ONSEMI |
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auf Bestellung 1011 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA160T3G | ONSEMI |
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auf Bestellung 3965 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA220T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward voltage: 0.95V Max. off-state voltage: 200V Load current: 2A Max. forward impulse current: 40A Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4985 Stücke: Lieferzeit 7-14 Tag (e) |
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MURB1620CTT4G | ONSEMI |
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auf Bestellung 734 Stücke: Lieferzeit 7-14 Tag (e) |
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MURS120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2143 Stücke: Lieferzeit 7-14 Tag (e) |
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MURS160T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4275 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN2212T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
100+ | 0.72 EUR |
500+ | 0.14 EUR |
1670+ | 0.043 EUR |
4580+ | 0.016 EUR |
MUN2213T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
676+ | 0.11 EUR |
1007+ | 0.071 EUR |
1306+ | 0.055 EUR |
1490+ | 0.049 EUR |
75000+ | 0.031 EUR |
MUN2214T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8370 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
562+ | 0.13 EUR |
820+ | 0.087 EUR |
979+ | 0.073 EUR |
1446+ | 0.049 EUR |
2513+ | 0.028 EUR |
2660+ | 0.027 EUR |
MUN2233T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5111DW1T1G |
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Hersteller: ONSEMI
MUN5111DW1T1G PNP SMD transistors
MUN5111DW1T1G PNP SMD transistors
auf Bestellung 1050 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
542+ | 0.13 EUR |
1050+ | 0.069 EUR |
12000+ | 0.047 EUR |
MUN5111T1G |
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Hersteller: ONSEMI
MUN5111T1G NPN SMD transistors
MUN5111T1G NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5112DW1T1G |
![]() |
Hersteller: ONSEMI
MUN5112DW1T1G PNP SMD transistors
MUN5112DW1T1G PNP SMD transistors
auf Bestellung 2499 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
391+ | 0.18 EUR |
999+ | 0.072 EUR |
1055+ | 0.068 EUR |
MUN5113DW1T1G |
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Hersteller: ONSEMI
MUN5113DW1T1G PNP SMD transistors
MUN5113DW1T1G PNP SMD transistors
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
110+ | 0.64 EUR |
395+ | 0.19 EUR |
1085+ | 0.066 EUR |
12000+ | 0.042 EUR |
MUN5114DW1T1G |
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Hersteller: ONSEMI
MUN5114DW1T1G PNP SMD transistors
MUN5114DW1T1G PNP SMD transistors
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
135+ | 0.53 EUR |
405+ | 0.17 EUR |
1115+ | 0.064 EUR |
12000+ | 0.042 EUR |
MUN5115DW1T1G |
![]() ![]() |
Hersteller: ONSEMI
MUN5115DW1T1G PNP SMD transistors
MUN5115DW1T1G PNP SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5131DW1T1G |
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Hersteller: ONSEMI
MUN5131DW1T1G PNP SMD transistors
MUN5131DW1T1G PNP SMD transistors
auf Bestellung 770 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
770+ | 0.093 EUR |
1045+ | 0.069 EUR |
12000+ | 0.04 EUR |
MUN5133DW1T1G |
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Hersteller: ONSEMI
MUN5133DW1T1G PNP SMD transistors
MUN5133DW1T1G PNP SMD transistors
auf Bestellung 348 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
348+ | 0.2 EUR |
380+ | 0.19 EUR |
1045+ | 0.069 EUR |
12000+ | 0.04 EUR |
MUN5135DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5211DW1T1G |
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Hersteller: ONSEMI
MUN5211DW1T1G NPN SMD transistors
MUN5211DW1T1G NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5211T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 60
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 60
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 544 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
544+ | 0.13 EUR |
1479+ | 0.049 EUR |
75000+ | 0.028 EUR |
MUN5213DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 825 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
385+ | 0.19 EUR |
650+ | 0.11 EUR |
817+ | 0.088 EUR |
825+ | 0.087 EUR |
941+ | 0.076 EUR |
3000+ | 0.045 EUR |
MUN5213T1G |
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Hersteller: ONSEMI
MUN5213T1G NPN SMD transistors
MUN5213T1G NPN SMD transistors
auf Bestellung 2054 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
352+ | 0.2 EUR |
2054+ | 0.034 EUR |
150000+ | 0.027 EUR |
MUN5214DW1T1G |
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Hersteller: ONSEMI
MUN5214DW1T1G NPN SMD transistors
MUN5214DW1T1G NPN SMD transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.02 EUR |
430+ | 0.17 EUR |
1175+ | 0.061 EUR |
12000+ | 0.04 EUR |
MUN5215T1G |
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Hersteller: ONSEMI
MUN5215T1G NPN SMD transistors
MUN5215T1G NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5232DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
521+ | 0.14 EUR |
840+ | 0.086 EUR |
9000+ | 0.05 EUR |
MUN5233DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 80...200
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 80...200
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
145+ | 0.49 EUR |
317+ | 0.23 EUR |
871+ | 0.082 EUR |
9000+ | 0.048 EUR |
MUN5233T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 200
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 200
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3192 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
676+ | 0.11 EUR |
782+ | 0.092 EUR |
1257+ | 0.057 EUR |
1548+ | 0.046 EUR |
2305+ | 0.031 EUR |
3192+ | 0.023 EUR |
MUN5235DW1T1G |
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Hersteller: ONSEMI
MUN5235DW1T1G NPN SMD transistors
MUN5235DW1T1G NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5235T1G |
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Hersteller: ONSEMI
MUN5235T1G NPN SMD transistors
MUN5235T1G NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5311DW1T1G |
![]() |
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2948 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
451+ | 0.16 EUR |
556+ | 0.13 EUR |
657+ | 0.11 EUR |
772+ | 0.093 EUR |
946+ | 0.076 EUR |
1583+ | 0.045 EUR |
MUN5312DW1T1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5313DW1T1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5314DW1T1G |
![]() |
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5668 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
625+ | 0.11 EUR |
1005+ | 0.071 EUR |
1327+ | 0.054 EUR |
2243+ | 0.032 EUR |
2370+ | 0.03 EUR |
MUN5316DW1T1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5333DW1T1G |
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Hersteller: ONSEMI
MUN5333DW1T1G Complementary transistors
MUN5333DW1T1G Complementary transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5335DW1T1G |
![]() |
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
506+ | 0.14 EUR |
695+ | 0.1 EUR |
792+ | 0.09 EUR |
1819+ | 0.039 EUR |
1924+ | 0.037 EUR |
MUR1100ERLG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4450 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
101+ | 0.71 EUR |
188+ | 0.38 EUR |
200+ | 0.36 EUR |
1000+ | 0.34 EUR |
MUR120RLG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1294 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
291+ | 0.25 EUR |
313+ | 0.23 EUR |
404+ | 0.18 EUR |
538+ | 0.13 EUR |
2000+ | 0.12 EUR |
MUR1520G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Max. load current: 30A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Max. load current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
68+ | 1.06 EUR |
94+ | 0.77 EUR |
99+ | 0.73 EUR |
100+ | 0.72 EUR |
500+ | 0.7 EUR |
MUR1540G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.3 EUR |
42+ | 1.7 EUR |
500+ | 1.02 EUR |
MUR1560G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 1.14÷1.39mm
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 515 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
52+ | 1.4 EUR |
60+ | 1.2 EUR |
63+ | 1.14 EUR |
MUR160G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 438 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
334+ | 0.21 EUR |
417+ | 0.17 EUR |
438+ | 0.16 EUR |
500+ | 0.15 EUR |
MUR160RLG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; DO41; Ufmax: 1.25V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 473 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
261+ | 0.27 EUR |
302+ | 0.24 EUR |
443+ | 0.16 EUR |
500+ | 0.14 EUR |
MUR1610CTG |
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Hersteller: ONSEMI
MUR1610CTG THT universal diodes
MUR1610CTG THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR1615CTG |
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Hersteller: ONSEMI
MUR1615CTG THT universal diodes
MUR1615CTG THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR1620CTG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
10+ | 7.15 EUR |
11+ | 6.51 EUR |
31+ | 2.3 EUR |
50+ | 1.43 EUR |
MUR1620CTRG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR1640CTG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR1660CTG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 100A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Max. forward impulse current: 100A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.27 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
50+ | 1.59 EUR |
100+ | 1.54 EUR |
MUR4100EG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Features of semiconductor devices: ultrafast switching
Case: CASE267-05
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Reverse recovery time: 75ns
Max. forward voltage: 1.85V
Load current: 4A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Features of semiconductor devices: ultrafast switching
Case: CASE267-05
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Reverse recovery time: 75ns
Max. forward voltage: 1.85V
Load current: 4A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 511 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
116+ | 0.62 EUR |
124+ | 0.58 EUR |
129+ | 0.55 EUR |
MUR4100ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR420G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1058 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
165+ | 0.43 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
500+ | 0.31 EUR |
MUR420RLG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
117+ | 0.61 EUR |
128+ | 0.56 EUR |
235+ | 0.3 EUR |
249+ | 0.29 EUR |
1000+ | 0.28 EUR |
mur460rlg |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 110A
Case: CASE267-05
Max. forward voltage: 1.28V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; reel; Ifsm: 110A; CASE267-05; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 110A
Case: CASE267-05
Max. forward voltage: 1.28V
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
107+ | 0.67 EUR |
117+ | 0.62 EUR |
143+ | 0.5 EUR |
148+ | 0.49 EUR |
1000+ | 0.3 EUR |
MUR8100EG |
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Hersteller: ONSEMI
MUR8100EG THT universal diodes
MUR8100EG THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUR820G | ![]() |
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Hersteller: ONSEMI
MUR820G THT universal diodes
MUR820G THT universal diodes
auf Bestellung 822 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.38 EUR |
102+ | 0.71 EUR |
108+ | 0.67 EUR |
5000+ | 0.65 EUR |
MUR860G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 317 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
61+ | 1.18 EUR |
84+ | 0.86 EUR |
92+ | 0.78 EUR |
MUR880EG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
100+ | 0.92 EUR |
MURA110T3G |
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Hersteller: ONSEMI
MURA110T3G SMD universal diodes
MURA110T3G SMD universal diodes
auf Bestellung 3781 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 0.58 EUR |
358+ | 0.2 EUR |
379+ | 0.19 EUR |
MURA120T3G |
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Hersteller: ONSEMI
MURA120T3G SMD universal diodes
MURA120T3G SMD universal diodes
auf Bestellung 1011 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
MURA160T3G |
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Hersteller: ONSEMI
MURA160T3G SMD universal diodes
MURA160T3G SMD universal diodes
auf Bestellung 3965 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
174+ | 0.41 EUR |
439+ | 0.16 EUR |
465+ | 0.15 EUR |
MURA220T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 40A
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 40A
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
225+ | 0.32 EUR |
278+ | 0.26 EUR |
309+ | 0.23 EUR |
758+ | 0.094 EUR |
794+ | 0.09 EUR |
10000+ | 0.086 EUR |
MURB1620CTT4G |
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Hersteller: ONSEMI
MURB1620CTT4G SMD universal diodes
MURB1620CTT4G SMD universal diodes
auf Bestellung 734 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.87 EUR |
61+ | 1.17 EUR |
65+ | 1.12 EUR |
500+ | 1.07 EUR |
MURS120T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2143 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
275+ | 0.26 EUR |
300+ | 0.24 EUR |
363+ | 0.2 EUR |
397+ | 0.18 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
MURS160T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4275 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
196+ | 0.37 EUR |
242+ | 0.3 EUR |
268+ | 0.27 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |