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FDB3502 FDB3502 onsemi fdb3502-d.pdf Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
Produkt ist nicht verfügbar
FDD5353 FDD5353 onsemi fdd5353-d.pdf Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.54 EUR
5000+ 1.46 EUR
12500+ 1.4 EUR
Mindestbestellmenge: 2500
FDMC4435BZ FDMC4435BZ onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.05 EUR
6000+ 1 EUR
9000+ 0.95 EUR
Mindestbestellmenge: 3000
FDMS3662 FDMS3662 onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.23 EUR
6000+ 3.1 EUR
Mindestbestellmenge: 3000
FDMS5352 FDMS5352 onsemi fdms5352-d.pdf Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Produkt ist nicht verfügbar
FDP047N08 FDP047N08 onsemi fdp047n08-d.pdf Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
auf Bestellung 34210 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.85 EUR
50+ 6.23 EUR
100+ 5.34 EUR
500+ 4.74 EUR
1000+ 4.06 EUR
2000+ 3.82 EUR
5000+ 3.67 EUR
Mindestbestellmenge: 4
FFA40UP35STU FFA40UP35STU onsemi ffa40up35s-d.pdf Description: DIODE GEN PURP 350V 40A TO3PN
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFDTU FGH40N60SFDTU onsemi fgh40n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 225 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.03 EUR
30+ 10.33 EUR
120+ 8.86 EUR
Mindestbestellmenge: 2
FGH40N60UFDTU FGH40N60UFDTU onsemi fgh40n60ufd-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 319 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.21 EUR
30+ 8.88 EUR
120+ 7.61 EUR
Mindestbestellmenge: 3
FQH8N100C FQH8N100C onsemi fqh8n100c-d.pdf Description: MOSFET N-CH 1000V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
FDB3502 FDB3502 onsemi fdb3502-d.pdf Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
auf Bestellung 619 Stücke:
Lieferzeit 21-28 Tag (e)
7+4 EUR
10+ 3.34 EUR
100+ 2.65 EUR
Mindestbestellmenge: 7
FDD5353 FDD5353 onsemi fdd5353-d.pdf Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 29004 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
10+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 7
FDMC4435BZ FDMC4435BZ onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 30502 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
13+ 2.07 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
FDMC8462 FDMC8462 onsemi fdmc8462-d.pdf Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
auf Bestellung 10461 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.54 EUR
10+ 4.62 EUR
100+ 3.67 EUR
500+ 3.11 EUR
1000+ 2.64 EUR
Mindestbestellmenge: 5
FDMS3662 FDMS3662 onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 29151 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.66 EUR
10+ 5.58 EUR
100+ 4.51 EUR
500+ 4.01 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 4
FDMS5352 FDMS5352 onsemi fdms5352-d.pdf Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
auf Bestellung 1256 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.63 EUR
100+ 4.56 EUR
500+ 4.05 EUR
1000+ 3.47 EUR
Mindestbestellmenge: 4
CAT885ZI-SA-GT3 CAT885ZI-SA-GT3 onsemi design-resources?notFound=CAT885-D.PDF Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Produkt ist nicht verfügbar
CAT24C256WI-GT3 CAT24C256WI-GT3 onsemi cat24c256-d.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.04 EUR
6000+ 1 EUR
15000+ 0.97 EUR
Mindestbestellmenge: 3000
CAT24C256YI-GT3 CAT24C256YI-GT3 onsemi cat24c256-d.pdf Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
CAT24C128YI-GT3 CAT24C128YI-GT3 onsemi cat24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.17 EUR
6000+ 1.13 EUR
15000+ 1.09 EUR
Mindestbestellmenge: 3000
FSBF10CH60BTL FSBF10CH60BTL onsemi FSBF10CH60BTL.pdf Description: MODULE SPM 600V 10A 3PH SPM27-JB
Produkt ist nicht verfügbar
FSQ0765RQWDTU FSQ0765RQWDTU onsemi fsq0765rq-d.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
Produkt ist nicht verfügbar
2SA1943OTU 2SA1943OTU onsemi fjl4215-d.pdf Description: TRANS PNP 250V 17A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 8603 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.91 EUR
25+ 9.44 EUR
100+ 8.09 EUR
500+ 7.19 EUR
1000+ 6.16 EUR
2000+ 5.8 EUR
Mindestbestellmenge: 3
2SA1962OTU 2SA1962OTU onsemi fja4213-d.pdf Description: TRANS PNP 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
auf Bestellung 5126 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.04 EUR
30+ 7.94 EUR
120+ 6.81 EUR
510+ 6.05 EUR
1020+ 5.18 EUR
2010+ 4.88 EUR
5010+ 4.68 EUR
Mindestbestellmenge: 3
2SC5242RTU 2SC5242RTU onsemi 2SC5242%2CFJA4313.pdf Description: TRANS NPN 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Produkt ist nicht verfügbar
2SC5242OTU 2SC5242OTU onsemi fja4313-d.pdf Description: TRANS NPN 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
auf Bestellung 1296 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.17 EUR
30+ 8.05 EUR
120+ 6.9 EUR
510+ 6.13 EUR
1020+ 5.25 EUR
Mindestbestellmenge: 3
2SA1381CSTU 2SA1381CSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381DSTU 2SA1381DSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381ESTU 2SA1381ESTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381FSTU 2SA1381FSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
1N914BWS 1N914BWS onsemi FAIR-S-A0000573112-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 75V 150MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 205937 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.074 EUR
6000+ 0.07 EUR
9000+ 0.06 EUR
30000+ 0.055 EUR
75000+ 0.048 EUR
150000+ 0.04 EUR
Mindestbestellmenge: 3000
FAN7387MX FAN7387MX onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7387N FAN7387N onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7390M1X FAN7390M1X onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.86 EUR
Mindestbestellmenge: 3000
FAN7390MX FAN7390MX onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.21 EUR
Mindestbestellmenge: 3000
FJP1943OTU FJP1943OTU onsemi fjp1943-d.pdf Description: TRANS PNP 230V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 80 W
Produkt ist nicht verfügbar
1N914BWS 1N914BWS onsemi FAIR-S-A0000573112-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 75V 150MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 207673 Stücke:
Lieferzeit 21-28 Tag (e)
59+0.44 EUR
86+ 0.3 EUR
159+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.089 EUR
Mindestbestellmenge: 59
FAN7387MX FAN7387MX onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7390M1X FAN7390M1X onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5821 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.5 EUR
10+ 5.83 EUR
25+ 5.5 EUR
100+ 4.4 EUR
250+ 3.85 EUR
500+ 3.74 EUR
1000+ 2.97 EUR
Mindestbestellmenge: 4
FAN7390MX FAN7390MX onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 4372 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.02 EUR
10+ 4.5 EUR
25+ 4.24 EUR
100+ 3.39 EUR
250+ 2.97 EUR
500+ 2.88 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 6
FAN7388MX FAN7388MX onsemi fan7388-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.43 EUR
2000+ 3.31 EUR
5000+ 3.2 EUR
Mindestbestellmenge: 1000
FAN7888MX FAN7888MX onsemi fan7888-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.32 EUR
2000+ 3.2 EUR
5000+ 3.1 EUR
Mindestbestellmenge: 1000
FDB024N06 FDB024N06 onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Produkt ist nicht verfügbar
FDB031N08 FDB031N08 onsemi fdb031n08-d.pdf Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
FDMS3500 FDMS3500 onsemi fdms3500-d.pdf Description: MOSFET N-CH 75V PWR CLIP 56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.28 EUR
Mindestbestellmenge: 3000
FDP025N06 FDP025N06 onsemi fdp025n06-d.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 36 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.28 EUR
Mindestbestellmenge: 3
FDP047N10 FDP047N10 onsemi fdp047n10-d.pdf Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
auf Bestellung 204 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.92 EUR
50+ 8.66 EUR
100+ 7.42 EUR
Mindestbestellmenge: 3
FDS5351 FDS5351 onsemi fds5351-d.pdf Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.74 EUR
5000+ 0.7 EUR
12500+ 0.65 EUR
Mindestbestellmenge: 2500
FFP08S60SNTU FFP08S60SNTU onsemi ffp08s60sn-d.pdf Description: DIODE GEN PURP 600V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
HGT1S7N60A4DS HGT1S7N60A4DS onsemi HGT%28G%2CP%2C1S%297N60A4D%28S%29.pdf Description: IGBT 600V 34A 125W TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
HGT1S12N60A4S9A HGT1S12N60A4S9A onsemi HGTG12N60A4.pdf Description: IGBT 600V 54A 167W TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
FXL2SD106BQX FXL2SD106BQX onsemi fxl2sd106-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 16DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 6
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.67 EUR
6000+ 0.65 EUR
Mindestbestellmenge: 3000
FJP1943RTU FJP1943RTU onsemi fjp1943-d.pdf Description: TRANS PNP 230V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 80 W
auf Bestellung 1090 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.84 EUR
10+ 6.14 EUR
100+ 4.94 EUR
500+ 4.06 EUR
1000+ 3.36 EUR
Mindestbestellmenge: 4
FAN7388MX FAN7388MX onsemi fan7388-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5447 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.84 EUR
10+ 6.15 EUR
25+ 5.81 EUR
100+ 4.78 EUR
250+ 4.29 EUR
500+ 4.13 EUR
Mindestbestellmenge: 4
FAN7888MX FAN7888MX onsemi fan7888-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 6077 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.94 EUR
25+ 5.62 EUR
100+ 4.62 EUR
250+ 4.15 EUR
500+ 4 EUR
Mindestbestellmenge: 4
FDB024N06 FDB024N06 onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.4 EUR
10+ 10.42 EUR
100+ 8.43 EUR
Mindestbestellmenge: 3
FDB031N08 FDB031N08 onsemi fdb031n08-d.pdf Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
FDMS3500 FDMS3500 onsemi fdms3500-d.pdf Description: MOSFET N-CH 75V PWR CLIP 56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
auf Bestellung 5467 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.04 EUR
10+ 4.19 EUR
100+ 3.34 EUR
500+ 2.82 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 6
FDS5351 FDS5351 onsemi fds5351-d.pdf Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 29791 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.95 EUR
16+ 1.7 EUR
100+ 1.17 EUR
500+ 0.98 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 14
FGD3N60LSDTM FGD3N60LSDTM onsemi fgd3n60lsd-d.pdf Description: IGBT 600V 6A 40W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Produkt ist nicht verfügbar
FDB3502 fdb3502-d.pdf
FDB3502
Hersteller: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
Produkt ist nicht verfügbar
FDD5353 fdd5353-d.pdf
FDD5353
Hersteller: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.54 EUR
5000+ 1.46 EUR
12500+ 1.4 EUR
Mindestbestellmenge: 2500
FDMC4435BZ fdmc4435bz-d.pdf
FDMC4435BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.05 EUR
6000+ 1 EUR
9000+ 0.95 EUR
Mindestbestellmenge: 3000
FDMS3662 fdms3662-d.pdf
FDMS3662
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.23 EUR
6000+ 3.1 EUR
Mindestbestellmenge: 3000
FDMS5352 fdms5352-d.pdf
FDMS5352
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Produkt ist nicht verfügbar
FDP047N08 fdp047n08-d.pdf
FDP047N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
auf Bestellung 34210 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.85 EUR
50+ 6.23 EUR
100+ 5.34 EUR
500+ 4.74 EUR
1000+ 4.06 EUR
2000+ 3.82 EUR
5000+ 3.67 EUR
Mindestbestellmenge: 4
FFA40UP35STU ffa40up35s-d.pdf
FFA40UP35STU
Hersteller: onsemi
Description: DIODE GEN PURP 350V 40A TO3PN
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFDTU fgh40n60sfdtu-f085-d.pdf
FGH40N60SFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 225 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.03 EUR
30+ 10.33 EUR
120+ 8.86 EUR
Mindestbestellmenge: 2
FGH40N60UFDTU fgh40n60ufd-d.pdf
FGH40N60UFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 319 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.21 EUR
30+ 8.88 EUR
120+ 7.61 EUR
Mindestbestellmenge: 3
FQH8N100C fqh8n100c-d.pdf
FQH8N100C
Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
FDB3502 fdb3502-d.pdf
FDB3502
Hersteller: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
auf Bestellung 619 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4 EUR
10+ 3.34 EUR
100+ 2.65 EUR
Mindestbestellmenge: 7
FDD5353 fdd5353-d.pdf
FDD5353
Hersteller: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 29004 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 7
FDMC4435BZ fdmc4435bz-d.pdf
FDMC4435BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 30502 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.52 EUR
13+ 2.07 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
FDMC8462 fdmc8462-d.pdf
FDMC8462
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
auf Bestellung 10461 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.54 EUR
10+ 4.62 EUR
100+ 3.67 EUR
500+ 3.11 EUR
1000+ 2.64 EUR
Mindestbestellmenge: 5
FDMS3662 fdms3662-d.pdf
FDMS3662
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 29151 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.58 EUR
100+ 4.51 EUR
500+ 4.01 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 4
FDMS5352 fdms5352-d.pdf
FDMS5352
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
auf Bestellung 1256 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.63 EUR
100+ 4.56 EUR
500+ 4.05 EUR
1000+ 3.47 EUR
Mindestbestellmenge: 4
CAT885ZI-SA-GT3 design-resources?notFound=CAT885-D.PDF
CAT885ZI-SA-GT3
Hersteller: onsemi
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Produkt ist nicht verfügbar
CAT24C256WI-GT3 cat24c256-d.pdf
CAT24C256WI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.04 EUR
6000+ 1 EUR
15000+ 0.97 EUR
Mindestbestellmenge: 3000
CAT24C256YI-GT3 cat24c256-d.pdf
CAT24C256YI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
CAT24C128YI-GT3 cat24c128-d.pdf
CAT24C128YI-GT3
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.17 EUR
6000+ 1.13 EUR
15000+ 1.09 EUR
Mindestbestellmenge: 3000
FSBF10CH60BTL FSBF10CH60BTL.pdf
FSBF10CH60BTL
Hersteller: onsemi
Description: MODULE SPM 600V 10A 3PH SPM27-JB
Produkt ist nicht verfügbar
FSQ0765RQWDTU fsq0765rq-d.pdf
FSQ0765RQWDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
Produkt ist nicht verfügbar
2SA1943OTU fjl4215-d.pdf
2SA1943OTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 8603 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.91 EUR
25+ 9.44 EUR
100+ 8.09 EUR
500+ 7.19 EUR
1000+ 6.16 EUR
2000+ 5.8 EUR
Mindestbestellmenge: 3
2SA1962OTU fja4213-d.pdf
2SA1962OTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
auf Bestellung 5126 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.04 EUR
30+ 7.94 EUR
120+ 6.81 EUR
510+ 6.05 EUR
1020+ 5.18 EUR
2010+ 4.88 EUR
5010+ 4.68 EUR
Mindestbestellmenge: 3
2SC5242RTU 2SC5242%2CFJA4313.pdf
2SC5242RTU
Hersteller: onsemi
Description: TRANS NPN 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Produkt ist nicht verfügbar
2SC5242OTU fja4313-d.pdf
2SC5242OTU
Hersteller: onsemi
Description: TRANS NPN 250V 17A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
auf Bestellung 1296 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.17 EUR
30+ 8.05 EUR
120+ 6.9 EUR
510+ 6.13 EUR
1020+ 5.25 EUR
Mindestbestellmenge: 3
2SA1381CSTU ksa1381-d.pdf
2SA1381CSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381DSTU ksa1381-d.pdf
2SA1381DSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381ESTU ksa1381-d.pdf
2SA1381ESTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
2SA1381FSTU ksa1381-d.pdf
2SA1381FSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
1N914BWS FAIR-S-A0000573112-1.pdf?t.download=true&u=5oefqw
1N914BWS
Hersteller: onsemi
Description: DIODE GEN PURP 75V 150MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 205937 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.074 EUR
6000+ 0.07 EUR
9000+ 0.06 EUR
30000+ 0.055 EUR
75000+ 0.048 EUR
150000+ 0.04 EUR
Mindestbestellmenge: 3000
FAN7387MX fan7387-d.pdf
FAN7387MX
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7387N fan7387-d.pdf
FAN7387N
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7390M1X fan7390-d.pdf
FAN7390M1X
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.86 EUR
Mindestbestellmenge: 3000
FAN7390MX fan7390-d.pdf
FAN7390MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.21 EUR
Mindestbestellmenge: 3000
FJP1943OTU fjp1943-d.pdf
FJP1943OTU
Hersteller: onsemi
Description: TRANS PNP 230V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 80 W
Produkt ist nicht verfügbar
1N914BWS FAIR-S-A0000573112-1.pdf?t.download=true&u=5oefqw
1N914BWS
Hersteller: onsemi
Description: DIODE GEN PURP 75V 150MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 207673 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.44 EUR
86+ 0.3 EUR
159+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.089 EUR
Mindestbestellmenge: 59
FAN7387MX fan7387-d.pdf
FAN7387MX
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
FAN7390M1X fan7390-d.pdf
FAN7390M1X
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5821 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.5 EUR
10+ 5.83 EUR
25+ 5.5 EUR
100+ 4.4 EUR
250+ 3.85 EUR
500+ 3.74 EUR
1000+ 2.97 EUR
Mindestbestellmenge: 4
FAN7390MX fan7390-d.pdf
FAN7390MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 4372 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.02 EUR
10+ 4.5 EUR
25+ 4.24 EUR
100+ 3.39 EUR
250+ 2.97 EUR
500+ 2.88 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 6
FAN7388MX fan7388-d.pdf
FAN7388MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+3.43 EUR
2000+ 3.31 EUR
5000+ 3.2 EUR
Mindestbestellmenge: 1000
FAN7888MX fan7888-d.pdf
FAN7888MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+3.32 EUR
2000+ 3.2 EUR
5000+ 3.1 EUR
Mindestbestellmenge: 1000
FDB024N06 fdb024n06-d.pdf
FDB024N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Produkt ist nicht verfügbar
FDB031N08 fdb031n08-d.pdf
FDB031N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
FDMS3500 fdms3500-d.pdf
FDMS3500
Hersteller: onsemi
Description: MOSFET N-CH 75V PWR CLIP 56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.28 EUR
Mindestbestellmenge: 3000
FDP025N06 fdp025n06-d.pdf
FDP025N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 36 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.28 EUR
Mindestbestellmenge: 3
FDP047N10 fdp047n10-d.pdf
FDP047N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
auf Bestellung 204 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.92 EUR
50+ 8.66 EUR
100+ 7.42 EUR
Mindestbestellmenge: 3
FDS5351 fds5351-d.pdf
FDS5351
Hersteller: onsemi
Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.74 EUR
5000+ 0.7 EUR
12500+ 0.65 EUR
Mindestbestellmenge: 2500
FFP08S60SNTU ffp08s60sn-d.pdf
FFP08S60SNTU
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
HGT1S7N60A4DS HGT%28G%2CP%2C1S%297N60A4D%28S%29.pdf
HGT1S7N60A4DS
Hersteller: onsemi
Description: IGBT 600V 34A 125W TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
HGT1S12N60A4S9A HGTG12N60A4.pdf
HGT1S12N60A4S9A
Hersteller: onsemi
Description: IGBT 600V 54A 167W TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
FXL2SD106BQX fxl2sd106-d.pdf
FXL2SD106BQX
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 16DQFN
Packaging: Tape & Reel (TR)
Features: Power-Off Protection
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 16-DQFN (2.5x3.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 6
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.67 EUR
6000+ 0.65 EUR
Mindestbestellmenge: 3000
FJP1943RTU fjp1943-d.pdf
FJP1943RTU
Hersteller: onsemi
Description: TRANS PNP 230V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 80 W
auf Bestellung 1090 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.84 EUR
10+ 6.14 EUR
100+ 4.94 EUR
500+ 4.06 EUR
1000+ 3.36 EUR
Mindestbestellmenge: 4
FAN7388MX fan7388-d.pdf
FAN7388MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5447 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.84 EUR
10+ 6.15 EUR
25+ 5.81 EUR
100+ 4.78 EUR
250+ 4.29 EUR
500+ 4.13 EUR
Mindestbestellmenge: 4
FAN7888MX fan7888-d.pdf
FAN7888MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 6077 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.63 EUR
10+ 5.94 EUR
25+ 5.62 EUR
100+ 4.62 EUR
250+ 4.15 EUR
500+ 4 EUR
Mindestbestellmenge: 4
FDB024N06 fdb024n06-d.pdf
FDB024N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.4 EUR
10+ 10.42 EUR
100+ 8.43 EUR
Mindestbestellmenge: 3
FDB031N08 fdb031n08-d.pdf
FDB031N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
FDMS3500 fdms3500-d.pdf
FDMS3500
Hersteller: onsemi
Description: MOSFET N-CH 75V PWR CLIP 56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
auf Bestellung 5467 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.04 EUR
10+ 4.19 EUR
100+ 3.34 EUR
500+ 2.82 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 6
FDS5351 fds5351-d.pdf
FDS5351
Hersteller: onsemi
Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 29791 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.95 EUR
16+ 1.7 EUR
100+ 1.17 EUR
500+ 0.98 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 14
FGD3N60LSDTM fgd3n60lsd-d.pdf
FGD3N60LSDTM
Hersteller: onsemi
Description: IGBT 600V 6A 40W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Produkt ist nicht verfügbar
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