Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDH5500 | onsemi |
Description: MOSFET N-CH 55V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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FGH60N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
Produkt ist nicht verfügbar |
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FGH60N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/130ns Switching Energy: 1.81mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W |
Produkt ist nicht verfügbar |
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Features: Bi-Directional, USB 2.0 Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 720MHz Supplier Device Package: 10-UMLP (1.8x1.4) Voltage - Supply, Single (V+): 3V ~ 4.4V Switch Circuit: DPDT Number of Channels: 1 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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SG6521SZ | onsemi | Description: IC SUPERVISOR 4 CHANNEL 16SOP |
Produkt ist nicht verfügbar |
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Features: Bi-Directional, USB 2.0 Packaging: Cut Tape (CT) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 720MHz Supplier Device Package: 10-UMLP (1.8x1.4) Voltage - Supply, Single (V+): 3V ~ 4.4V Switch Circuit: DPDT Number of Channels: 1 |
auf Bestellung 14305 Stücke: Lieferzeit 21-28 Tag (e) |
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SG6521SZ | onsemi | Description: IC SUPERVISOR 4 CHANNEL 16SOP |
Produkt ist nicht verfügbar |
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1N4002_NL | onsemi |
Description: DIODE GEN PURP 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N4004_NL | onsemi |
Description: DIODE GEN PURP 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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1N4448WT | onsemi |
Description: DIODE GEN PURP 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5231C | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
auf Bestellung 7307 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5231CTR | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
auf Bestellung 55000 Stücke: Lieferzeit 21-28 Tag (e) |
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1N914BWT | onsemi |
Description: DIODE GEN PURP 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 2832000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5245_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 15mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5246_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 7mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5247_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Frequency: 400MHz Configuration: N-Channel Technology: JFET Noise Figure: 4dB Supplier Device Package: TO-92-3 Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5950_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 15mA Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V |
Produkt ist nicht verfügbar |
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2N5951_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 13mA Mounting Type: Through Hole Frequency: 1kHz Configuration: N-Channel Technology: JFET Noise Figure: 2dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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2N5952_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 8mA Mounting Type: Through Hole Frequency: 1kHz Configuration: N-Channel Technology: JFET Noise Figure: 2dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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2N5953_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Current Rating (Amps): 5mA Mounting Type: Through Hole Frequency: 1kHz Configuration: N-Channel Technology: JFET Noise Figure: 2dB Supplier Device Package: TO-92-3 Part Status: Obsolete Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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2N7002_NB9G002 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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4N26M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
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4N32SVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6SMD Packaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
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4N33TVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
auf Bestellung 1161 Stücke: Lieferzeit 21-28 Tag (e) |
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4N35M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
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4N37M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
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74LCX373BQX | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN Packaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-DQFN (2.5x4.5) |
Produkt ist nicht verfügbar |
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74LCX541BQX | onsemi |
Description: IC BUF NON-INVERT 3.6V 20DQFN Packaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-DQFN (2.5x4.5) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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74VCX16838MTD | onsemi |
Description: IC REGISTER BUFFER 16BIT 48TSSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Supplier Device Package: 48-TSSOP Number of Bits per Element: 16 |
Produkt ist nicht verfügbar |
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74VCX16839MTD | onsemi | Description: IC BUF NON-INVERT 3.6V 56TSSOP |
Produkt ist nicht verfügbar |
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74VCX16839MTDX | onsemi | Description: IC BUF NON-INVERT 3.6V 56TSSOP |
Produkt ist nicht verfügbar |
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BAX16 | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
auf Bestellung 29443 Stücke: Lieferzeit 21-28 Tag (e) |
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BAX16TR | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar |
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BC182B_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC182LA_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V |
Produkt ist nicht verfügbar |
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BC182LB_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC182L_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC182_J35Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC183C_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC183LC_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC183_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC184C_J35Z | onsemi |
Description: TRANS NPN 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC184LC_J35Z | onsemi |
Description: TRANS NPN 30V 0.2A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC184L_J35Z | onsemi |
Description: TRANS NPN 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC184_J35Z | onsemi |
Description: TRANS NPN 30V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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BC212B_J35Z | onsemi | Description: TRANS PNP 50V 0.1A TO92-3 |
Produkt ist nicht verfügbar |
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BC214LB_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC214LC_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC214L_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC214_J35Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC237A_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC237B_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC237_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC238A_J35Z | onsemi |
Description: TRANS NPN 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC238_J35Z | onsemi |
Description: TRANS NPN 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC307B_J35Z | onsemi |
Description: TRANS PNP 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC307_J35Z | onsemi |
Description: TRANS PNP 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC308A_J35Z | onsemi |
Description: TRANS PNP 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC308C_J35Z | onsemi |
Description: TRANS PNP 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC308_J35Z | onsemi |
Description: TRANS PNP 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
FDH5500 |
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
FGH60N60SFDTU |
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Produkt ist nicht verfügbar
FGH60N60UFDTU |
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Description: IGBT FIELD STOP 600V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Produkt ist nicht verfügbar
FSUSB104UMX |
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.76 EUR |
10000+ | 0.73 EUR |
FSUSB104UMX |
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
Description: IC USB SWITCH DUAL DPDT 10UMLP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 3V ~ 4.4V
Switch Circuit: DPDT
Number of Channels: 1
auf Bestellung 14305 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.18 EUR |
14+ | 1.92 EUR |
25+ | 1.8 EUR |
100+ | 1.37 EUR |
250+ | 1.16 EUR |
500+ | 1.11 EUR |
1000+ | 0.84 EUR |
2500+ | 0.79 EUR |
1N4002_NL |
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
1N4004_NL |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
1N4448WT |
Hersteller: onsemi
Description: DIODE GEN PURP 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.08 EUR |
16000+ | 0.068 EUR |
24000+ | 0.063 EUR |
1N5231C |
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 7307 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.62 EUR |
61+ | 0.43 EUR |
124+ | 0.21 EUR |
1000+ | 0.12 EUR |
5000+ | 0.098 EUR |
1N5231CTR |
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 55000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.086 EUR |
10000+ | 0.071 EUR |
25000+ | 0.07 EUR |
50000+ | 0.063 EUR |
1N914BWT |
Hersteller: onsemi
Description: DIODE GEN PURP 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 2832000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.067 EUR |
16000+ | 0.057 EUR |
24000+ | 0.052 EUR |
56000+ | 0.045 EUR |
200000+ | 0.038 EUR |
2N5245_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5246_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 7mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5247_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5950_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Description: RF MOSFET JFET 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 15mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Produkt ist nicht verfügbar
2N5951_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 13mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
2N5952_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 8mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
2N5953_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 5mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 5mA
Mounting Type: Through Hole
Frequency: 1kHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
2N7002_NB9G002 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 115MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 115MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
4N26M_F132 |
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
4N32SVM |
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
4N33TVM |
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 1161 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.92 EUR |
50+ | 1.26 EUR |
100+ | 0.82 EUR |
1000+ | 0.65 EUR |
4N35M_F132 |
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
4N37M_F132 |
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
74LCX373BQX |
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
Produkt ist nicht verfügbar
74LCX541BQX |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
Produkt ist nicht verfügbar
74VCX16838MTD |
Hersteller: onsemi
Description: IC REGISTER BUFFER 16BIT 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Supplier Device Package: 48-TSSOP
Number of Bits per Element: 16
Description: IC REGISTER BUFFER 16BIT 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Supplier Device Package: 48-TSSOP
Number of Bits per Element: 16
Produkt ist nicht verfügbar
74VCX16839MTD |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Produkt ist nicht verfügbar
74VCX16839MTDX |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Produkt ist nicht verfügbar
BAX16 |
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 29443 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
39+ | 0.68 EUR |
100+ | 0.36 EUR |
500+ | 0.24 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
5000+ | 0.13 EUR |
10000+ | 0.11 EUR |
BAX16TR |
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar
BC182B_J35Z |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC182LA_J35Z |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar
BC182LB_J35Z |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC182L_J35Z |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC182_J35Z |
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC183C_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC183LC_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC183_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC184C_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC184LC_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC184L_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC184_J35Z |
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
BC214LB_J35Z |
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC214LC_J35Z |
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC214L_J35Z |
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC214_J35Z |
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC237A_J35Z |
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC237B_J35Z |
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC237_J35Z |
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC238A_J35Z |
Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC238_J35Z |
Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC307B_J35Z |
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC307_J35Z |
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC308A_J35Z |
Hersteller: onsemi
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC308C_J35Z |
Hersteller: onsemi
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC308_J35Z |
Hersteller: onsemi
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar