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BC847BTT1 BC847BTT1 onsemi bc847att1-d.pdf Description: TRANS NPN 45V 0.1A SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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BC850CLT1 BC850CLT1 onsemi BC846ALT1-D.PDF Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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BC817-16LT1 BC817-16LT1 onsemi BC817-16LT1_25LT1_40LT1.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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MGSF1N02LT1 MGSF1N02LT1 onsemi mgsf1n02lt1-d.pdf Description: MOSFET N-CH 20V 750MA SOT23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Produkt ist nicht verfügbar
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MGSF1P02LT1 MGSF1P02LT1 onsemi MGSF1P02LT1.pdf Description: MOSFET P-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MTD10N10ELT4 MTD10N10ELT4 onsemi mtd10n10el-d.pdf Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MTD5P06VT4 MTD5P06VT4 onsemi mtd5p06v-d.pdf Description: MOSFET P-CH 60V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCX19LT1 BCX19LT1 onsemi BCX17LT1.pdf description Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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VN0300L VN0300L onsemi VN0300L.pdf Description: MOSFET N-CH 60V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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D45H8 D45H8 onsemi d44h-d.pdf Description: TRANS PNP 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BSS123LT1 BSS123LT1 onsemi BSS123LT1%20Rev5.pdf description Description: MOSFET N-CH 100V 170MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS138LT1 BSS138LT1 onsemi bss138lt1-d.pdf Description: MOSFET N-CH 50V 200MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS84LT1 BSS84LT1 onsemi bss84lt1-d.pdf Description: MOSFET P-CH 50V 130MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MGSF1N02LT1 MGSF1N02LT1 onsemi mgsf1n02lt1-d.pdf Description: MOSFET N-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MGSF1N03LT1 MGSF1N03LT1 onsemi mgsf1n03lt1-d.pdf Description: MOSFET N-CH 30V 1.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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MTB50P03HDLT4 MTB50P03HDLT4 onsemi MTB50P03HDL.pdf Description: MOSFET P-CH 30V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC846ALT1 BC846ALT1 onsemi BC846ALT1_Rev6.pdf Description: TRANS NPN 65V 100MA SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC846BLT1 BC846BLT1 onsemi BC846ALT1_Rev6.pdf description Description: TRANS NPN 65V 100MA SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC847BTT1 BC847BTT1 onsemi bc847att1-d.pdf Description: TRANS NPN 45V 0.1A SC75 SOT416
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75, SOT-416
Frequency - Transition: 100MHz
Produkt ist nicht verfügbar
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BC848ALT1 BC848ALT1 onsemi BC846ALT1_Rev6.pdf Description: TRANS NPN 30V 100MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP19AT1 BSP19AT1 onsemi bsp19at1-d.pdf Description: TRANS NPN 1A 350V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP52T1 BSP52T1 onsemi bsp52t1-d.pdf Description: TRANS DARL NPN 1A 80V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MJD243T4 MJD243T4 onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD253T4 MJD253T4 onsemi mjd243-d.pdf Description: TRANS PWR PNP 4A 100V DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Produkt ist nicht verfügbar
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MJD2955T4 MJD2955T4 onsemi mjd2955-d.pdf Description: TRANS PWR PNP 10A 60V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MJD41CT4 MJD41CT4 onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD42CT4 MJD42CT4 onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD50T4 MJD50T4 onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2212LT1 MMUN2212LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMUN2213LT1 MMUN2213LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2216LT1 MMUN2216LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2232LT1 MMUN2232LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MSD601-RT1 MSD601-RT1 onsemi msd601-rt1-d.pdf Description: TRANS NPN 50V 0.1A SC59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MUN2111T1 MUN2111T1 onsemi MUN2111T1%20Series.pdf Description: TRANS BRT PNP 100MA 50V SC59
Packaging: Cut Tape (CT)
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MUN2214T1 MUN2214T1 onsemi MUN2211T1%20Series.pdf Description: TRANS BRT NPN 100MA 50V SC59
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
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MUN5211DW1T1 MUN5211DW1T1 onsemi MUN5211DW1T1%20Series.pdf Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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MUN5214T1 MUN5214T1 onsemi MUN5211T1_Series.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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MUR180E MUR180E onsemi mur180e-d.pdf Description: DIODE STANDARD 800V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
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MUR405 MUR405 onsemi mur420-d.pdf Description: DIODE GEN PURP 50V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MR2504 MR2504 onsemi mr2500-d.pdf Description: DIODE GP 400V 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Packaging: Bulk
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
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MR2510 MR2510 onsemi mr2500-d.pdf Description: DIODE GP 1KV 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
Packaging: Bulk
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MUR415 MUR415 onsemi mur420-d.pdf Description: DIODE STANDARD 150V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MUR480E MUR480E onsemi mur480e-d.pdf Description: DIODE STANDARD 800V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
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1N6276A 1N6276A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 13.6V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
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1N6277A 1N6277A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6285A 1N6285A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 33.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6295A 1N6295A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 85.5VWM 137VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 85.5V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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MBRP20030CTL MBRP20030CTL onsemi mbrp20030ctl-d.pdf Description: DIODE MOD SCHOTT 30V POWERTAP II
Packaging: Tray
Package / Case: POWERTAP II
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: POWERTAP II
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
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MURP20040CT MURP20040CT onsemi murp20020ct-d.pdf Description: DIODE MOD GP 400V 100A POWERTAP2
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURP20020CT MURP20020CT onsemi murp20020ct-d.pdf Description: DIODE MOD GP 300V 100A POWERTAP2
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 300 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MBRP400100CTL MBRP400100CTL onsemi MBRP400100CTL%28Sept%2006%29-D.pdf Description: DIODE MOD SCHOT 100V POWERTAP II
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MBRP30060CT MBRP30060CT onsemi mbrp30060ct-d.pdf Description: DIODE MOD SCHOTT 60V POWERTAP II
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURHB840CT MURHB840CT onsemi murhb840ct-d.pdf Description: DIODE ARRAY GP 400V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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MBR16100CT MBR16100CT onsemi mbr16100ct-d.pdf Description: DIODE ARRAY SCHOT 100V 8A TO-220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBR2030CTL MBR2030CTL onsemi mbr2030ctl-d.pdf Description: DIODE ARRAY SCHOT 30V 10A TO-220
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MUR620CT MUR620CT onsemi mur620ct-d.pdf Description: DIODE ARRAY GP 200V 3A TO220AB
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MCR8N MCR8N onsemi MCR8NG.pdf Description: SCR 800V 8A TO220AB
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MUR1620CTR MUR1620CTR onsemi mur1620ctr-d.pdf Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR815 MUR815 onsemi mur820-d.pdf Description: DIODE GEN PURP 150V 8A TO220-2
Packaging: Tube
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
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MUR880E MUR880E onsemi mur8100e-d.pdf Description: DIODE STANDARD 800V 8A TO2202
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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BC847BTT1 bc847att1-d.pdf
BC847BTT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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BC850CLT1 BC846ALT1-D.PDF
BC850CLT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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BC817-16LT1 BC817-16LT1_25LT1_40LT1.pdf
BC817-16LT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
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MGSF1N02LT1 mgsf1n02lt1-d.pdf
MGSF1N02LT1
Hersteller: onsemi
Description: MOSFET N-CH 20V 750MA SOT23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
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MGSF1P02LT1 MGSF1P02LT1.pdf
MGSF1P02LT1
Hersteller: onsemi
Description: MOSFET P-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MTD10N10ELT4 mtd10n10el-d.pdf
MTD10N10ELT4
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MTD5P06VT4 mtd5p06v-d.pdf
MTD5P06VT4
Hersteller: onsemi
Description: MOSFET P-CH 60V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCX19LT1 description BCX17LT1.pdf
BCX19LT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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VN0300L VN0300L.pdf
VN0300L
Hersteller: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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D45H8 d44h-d.pdf
D45H8
Hersteller: onsemi
Description: TRANS PNP 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BSS123LT1 description BSS123LT1%20Rev5.pdf
BSS123LT1
Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS138LT1 bss138lt1-d.pdf
BSS138LT1
Hersteller: onsemi
Description: MOSFET N-CH 50V 200MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS84LT1 bss84lt1-d.pdf
BSS84LT1
Hersteller: onsemi
Description: MOSFET P-CH 50V 130MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MGSF1N02LT1 mgsf1n02lt1-d.pdf
MGSF1N02LT1
Hersteller: onsemi
Description: MOSFET N-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MGSF1N03LT1 mgsf1n03lt1-d.pdf
MGSF1N03LT1
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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MTB50P03HDLT4 MTB50P03HDL.pdf
MTB50P03HDLT4
Hersteller: onsemi
Description: MOSFET P-CH 30V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC846ALT1 BC846ALT1_Rev6.pdf
BC846ALT1
Hersteller: onsemi
Description: TRANS NPN 65V 100MA SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC846BLT1 description BC846ALT1_Rev6.pdf
BC846BLT1
Hersteller: onsemi
Description: TRANS NPN 65V 100MA SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC847BTT1 bc847att1-d.pdf
BC847BTT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SC75 SOT416
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75, SOT-416
Frequency - Transition: 100MHz
Produkt ist nicht verfügbar
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BC848ALT1 BC846ALT1_Rev6.pdf
BC848ALT1
Hersteller: onsemi
Description: TRANS NPN 30V 100MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP19AT1 bsp19at1-d.pdf
BSP19AT1
Hersteller: onsemi
Description: TRANS NPN 1A 350V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP52T1 bsp52t1-d.pdf
BSP52T1
Hersteller: onsemi
Description: TRANS DARL NPN 1A 80V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MJD243T4 mjd243-d.pdf
MJD243T4
Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD253T4 mjd243-d.pdf
MJD253T4
Hersteller: onsemi
Description: TRANS PWR PNP 4A 100V DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Produkt ist nicht verfügbar
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MJD2955T4 mjd2955-d.pdf
MJD2955T4
Hersteller: onsemi
Description: TRANS PWR PNP 10A 60V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MJD41CT4 mjd41c-d.pdf
MJD41CT4
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD42CT4 mjd41c-d.pdf
MJD42CT4
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD50T4 mjd47-d.pdf
MJD50T4
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2212LT1 MMUN22xxLTx_Series.pdf
MMUN2212LT1
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMUN2213LT1 MMUN22xxLTx_Series.pdf
MMUN2213LT1
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2216LT1 MMUN22xxLTx_Series.pdf
MMUN2216LT1
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMUN2232LT1 MMUN22xxLTx_Series.pdf
MMUN2232LT1
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MSD601-RT1 msd601-rt1-d.pdf
MSD601-RT1
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MUN2111T1 MUN2111T1%20Series.pdf
MUN2111T1
Hersteller: onsemi
Description: TRANS BRT PNP 100MA 50V SC59
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MUN2214T1 MUN2211T1%20Series.pdf
MUN2214T1
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Produkt ist nicht verfügbar
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MUN5211DW1T1 MUN5211DW1T1%20Series.pdf
MUN5211DW1T1
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Produkt ist nicht verfügbar
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MUN5214T1 MUN5211T1_Series.pdf
MUN5214T1
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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MUR180E mur180e-d.pdf
MUR180E
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
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MUR405 mur420-d.pdf
MUR405
Hersteller: onsemi
Description: DIODE GEN PURP 50V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MR2504 mr2500-d.pdf
MR2504
Hersteller: onsemi
Description: DIODE GP 400V 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Packaging: Bulk
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
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MR2510 mr2500-d.pdf
MR2510
Hersteller: onsemi
Description: DIODE GP 1KV 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
Packaging: Bulk
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MUR415 mur420-d.pdf
MUR415
Hersteller: onsemi
Description: DIODE STANDARD 150V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MUR480E mur480e-d.pdf
MUR480E
Hersteller: onsemi
Description: DIODE STANDARD 800V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
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1N6276A 1N6267A%20Series%20Rev6.pdf
1N6276A
Hersteller: onsemi
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 13.6V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
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1N6277A 1N6267A%20Series%20Rev6.pdf
1N6277A
Hersteller: onsemi
Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6285A 1N6267A%20Series%20Rev6.pdf
1N6285A
Hersteller: onsemi
Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 33.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6295A 1N6267A%20Series%20Rev6.pdf
1N6295A
Hersteller: onsemi
Description: TVS DIODE 85.5VWM 137VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 85.5V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRP20030CTL mbrp20030ctl-d.pdf
MBRP20030CTL
Hersteller: onsemi
Description: DIODE MOD SCHOTT 30V POWERTAP II
Packaging: Tray
Package / Case: POWERTAP II
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: POWERTAP II
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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MURP20040CT murp20020ct-d.pdf
MURP20040CT
Hersteller: onsemi
Description: DIODE MOD GP 400V 100A POWERTAP2
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURP20020CT murp20020ct-d.pdf
MURP20020CT
Hersteller: onsemi
Description: DIODE MOD GP 300V 100A POWERTAP2
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 300 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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MBRP400100CTL MBRP400100CTL%28Sept%2006%29-D.pdf
MBRP400100CTL
Hersteller: onsemi
Description: DIODE MOD SCHOT 100V POWERTAP II
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Produkt ist nicht verfügbar
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MBRP30060CT mbrp30060ct-d.pdf
MBRP30060CT
Hersteller: onsemi
Description: DIODE MOD SCHOTT 60V POWERTAP II
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Produkt ist nicht verfügbar
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MURHB840CT murhb840ct-d.pdf
MURHB840CT
Hersteller: onsemi
Description: DIODE ARRAY GP 400V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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MBR16100CT mbr16100ct-d.pdf
MBR16100CT
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 100V 8A TO-220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR2030CTL mbr2030ctl-d.pdf
MBR2030CTL
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 30V 10A TO-220
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MUR620CT mur620ct-d.pdf
MUR620CT
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A TO220AB
Produkt ist nicht verfügbar
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MCR8N MCR8NG.pdf
MCR8N
Hersteller: onsemi
Description: SCR 800V 8A TO220AB
Produkt ist nicht verfügbar
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MUR1620CTR mur1620ctr-d.pdf
MUR1620CTR
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MUR815 mur820-d.pdf
MUR815
Hersteller: onsemi
Description: DIODE GEN PURP 150V 8A TO220-2
Packaging: Tube
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar
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MUR880E mur8100e-d.pdf
MUR880E
Hersteller: onsemi
Description: DIODE STANDARD 800V 8A TO2202
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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