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MMBT8099LT1 MMBT8099LT1 onsemi mmbt8099lt1-d.pdf Description: TRANS NPN 80V 0.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
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MPSA44RLRA MPSA44RLRA onsemi mpsa44-d.pdf Description: TRANS NPN SS GP 400V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MPSW06RLRA MPSW06RLRA onsemi mpsw05-d.pdf Description: TRANS NPN SS GP 1W 80V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MPSW42RLRA MPSW42RLRA onsemi mpsw42-d.pdf Description: TRANS NPN SS 1W 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBF0201NLT1 MMBF0201NLT1 onsemi mmbf0201nlt1-d.pdf Description: MOSFET N-CH 20V 300MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBF2201NT1 MMBF2201NT1 onsemi mmbf2201nt1-d.pdf Description: MOSFET N-CH 20V 300MA SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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PZTA42T1 PZTA42T1 onsemi PZTA42T1-D.pdf Description: TRANS NPN 300V 0.5A SOT223
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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PZTA92T1 PZTA92T1 onsemi PZTA92T1-D.pdf Description: TRANS SS PNP 500MA 300V SOT223
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBF4391LT1 MMBF4391LT1 onsemi mmbf4391lt1-d.pdf Description: JFET SS N-CHAN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4392LT1 MMBF4392LT1 onsemi mmbf4391lt1-d.pdf Description: JFET SS N-CHAN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4393LT1 MMBF4393LT1 onsemi mmbf4391lt1-d.pdf Description: JFET N-CH 30V 0.225W SOT23
Packaging: Cut Tape (CT)
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MMBF4416LT1 MMBF4416LT1 onsemi mmbf4416lt1-d.pdf Description: MOSFET SS N-CHAN VHF 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBF5457LT1 MMBF5457LT1 onsemi mmbf5457lt1-d.pdf Description: JFET N-CH 25V SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 225 mW
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: N-Channel
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MMBF5460LT1 MMBF5460LT1 onsemi mmbf5460lt1-d.pdf Description: JFET P-CH 40V 0.225W SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF5484LT1 MMBF5484LT1 onsemi mmbf5484lt1-d.pdf Description: SS N-CHAN 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBFJ175LT1 MMBFJ175LT1 onsemi mmbfj175lt1-d.pdf Description: SS P-CHAN 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBFJ177LT1 MMBFJ177LT1 onsemi MMBFJ177LT1G%2C%20SMMBFJ177LT1G.pdf Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFJ309LT1 MMBFJ309LT1 onsemi mmbfj309lt1-d.pdf Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFJ310LT1 MMBFJ310LT1 onsemi MMBFJ%2CSMMBFJ3%2809%2C10%29L.pdf Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFU310LT1 MMBFU310LT1 onsemi mmbfu310lt1-d.pdf Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMJT9435T1 MMJT9435T1 onsemi mmjt9435-d.pdf Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTD12N10T4 NTD12N10T4 onsemi ntd12n10-d.pdf Description: MOSFET N-CH 100V 12A DPAK
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MMDF2P02HDR2 MMDF2P02HDR2 onsemi mmdf2p02hd-d.pdf Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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MMPQ2222AR1 MMPQ2222AR1 onsemi mmpq2222a-d.pdf Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NTB85N03T4 NTB85N03T4 onsemi ntp85n03-d.pdf Description: MOSFET N-CH 28V 85A D2PAK
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PN2222 PN2222 onsemi DS_488_PN2222.pdf Description: TRANS NPN 30V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPS3638A MPS3638A onsemi mps3638a-d.pdf Description: TRANS PNP 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Current - Collector Cutoff (Max): 35nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2N5088 2N5088 onsemi 2N5088%2C%205089%20Rev3.pdf description Description: TRANS NPN 30V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5089 2N5089 onsemi 2N5088%2C%205089%20Rev3.pdf Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS5179 MPS5179 onsemi MMBT5179.pdf Description: RF TRANS NPN 12V 2GHZ TO92-3
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6287A 1N6287A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 40.2V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE270 MJE270 onsemi mje270-d.pdf Description: TRANS NPN DARL 100V 2A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-126
Frequency - Transition: 6MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE371 MJE371 onsemi mje371-d.pdf Description: TRANS PNP 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE181 MJE181 onsemi mje171-d.pdf Description: TRANS NPN 60V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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MJE13003 MJE13003 onsemi mje13003-d.pdf description Description: TRANS NPN 400V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
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MJE170 MJE170 onsemi mje171-d.pdf Description: TRANS PNP 40V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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MJE171 MJE171 onsemi mje171-d.pdf Description: TRANS PNP 60V 3A TO-126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE803 MJE803 onsemi mje700-d.pdf Description: TRANS NPN DARL 80V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
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VN2222LL VN2222LL onsemi VN2222LL%20Rev3.pdf Description: MOSFET N-CH 60V 150MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MJ11016 MJ11016 onsemi mj11012-d.pdf Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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mj11032 mj11032 onsemi mj11028-d.pdf Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
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MJH11021 MJH11021 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 250V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJH11022 MJH11022 onsemi mjh11017-d.pdf Description: TRANS NPN DARL 250V 15A SOT-93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJF15031 MJF15031 onsemi mjf15030-d.pdf Description: TRANS PNP 150V 8A TO-220FP
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220FP
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Produkt ist nicht verfügbar
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MJH11017 MJH11017 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 150V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJH11020 MJH11020 onsemi mjh11017-d.pdf Description: TRANS NPN DARL 200V 15A SOT93
Packaging: Tube
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Produkt ist nicht verfügbar
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MJH11019 MJH11019 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 200V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJF6668 MJF6668 onsemi mjf6388-d.pdf Description: TRANS PNP DARL 100V 10A TO220FP
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
Produkt ist nicht verfügbar
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MJF6388 MJF6388 onsemi mjf6388-d.pdf Description: TRANS NPN DARL 100V 10A TO220FP
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220FP
Produkt ist nicht verfügbar
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MJF44H11 MJF44H11 onsemi mjf44h11-d.pdf Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJF3055 MJF3055 onsemi mjf3055-d.pdf Description: TRANS NPN 90V 10A TO-220FP
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 90 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MJF18004 MJF18004 onsemi mje18004-d.pdf description Description: TRANS NPN 450V 5A TO220FP
Power - Max: 35 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220FP
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MTP2P50E MTP2P50E onsemi mtp2p50e-d.pdf Description: MOSFET P-CH 500V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1183 pF @ 25 V
Produkt ist nicht verfügbar
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MJH6284 MJH6284 onsemi mjh6284-d.pdf Description: TRANS NPN DARL 100V 20A SOT93
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Supplier Device Package: SOT-93
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MTP23P06V MTP23P06V onsemi mtp23p06v-d.pdf Description: MOSFET P-CH 60V 23A TO220AB
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MTD6P10E MTD6P10E onsemi mtd6p10e-d.pdf Description: MOSFET P-CH 100V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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MTP2955V MTP2955V onsemi mtp2955v-d.pdf Description: MOSFET P-CH 60V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJH6287 MJH6287 onsemi mjh6284-d.pdf Description: TRANS PNP DARL 100V 20A SOT93
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Supplier Device Package: SOT-93
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJL3281A MJL3281A onsemi mjl3281a-d.pdf Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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MJL21194 MJL21194 onsemi mjl21193-d.pdf description Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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MMBT8099LT1 mmbt8099lt1-d.pdf
MMBT8099LT1
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Produkt ist nicht verfügbar
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MPSA44RLRA mpsa44-d.pdf
MPSA44RLRA
Hersteller: onsemi
Description: TRANS NPN SS GP 400V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MPSW06RLRA mpsw05-d.pdf
MPSW06RLRA
Hersteller: onsemi
Description: TRANS NPN SS GP 1W 80V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MPSW42RLRA mpsw42-d.pdf
MPSW42RLRA
Hersteller: onsemi
Description: TRANS NPN SS 1W 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF0201NLT1 mmbf0201nlt1-d.pdf
MMBF0201NLT1
Hersteller: onsemi
Description: MOSFET N-CH 20V 300MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF2201NT1 mmbf2201nt1-d.pdf
MMBF2201NT1
Hersteller: onsemi
Description: MOSFET N-CH 20V 300MA SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PZTA42T1 PZTA42T1-D.pdf
PZTA42T1
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A SOT223
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PZTA92T1 PZTA92T1-D.pdf
PZTA92T1
Hersteller: onsemi
Description: TRANS SS PNP 500MA 300V SOT223
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4391LT1 mmbf4391lt1-d.pdf
MMBF4391LT1
Hersteller: onsemi
Description: JFET SS N-CHAN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4392LT1 mmbf4391lt1-d.pdf
MMBF4392LT1
Hersteller: onsemi
Description: JFET SS N-CHAN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4393LT1 mmbf4391lt1-d.pdf
MMBF4393LT1
Hersteller: onsemi
Description: JFET N-CH 30V 0.225W SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF4416LT1 mmbf4416lt1-d.pdf
MMBF4416LT1
Hersteller: onsemi
Description: MOSFET SS N-CHAN VHF 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF5457LT1 mmbf5457lt1-d.pdf
MMBF5457LT1
Hersteller: onsemi
Description: JFET N-CH 25V SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Power - Max: 225 mW
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: N-Channel
Produkt ist nicht verfügbar
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MMBF5460LT1 mmbf5460lt1-d.pdf
MMBF5460LT1
Hersteller: onsemi
Description: JFET P-CH 40V 0.225W SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBF5484LT1 mmbf5484lt1-d.pdf
MMBF5484LT1
Hersteller: onsemi
Description: SS N-CHAN 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBFJ175LT1 mmbfj175lt1-d.pdf
MMBFJ175LT1
Hersteller: onsemi
Description: SS P-CHAN 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBFJ177LT1 MMBFJ177LT1G%2C%20SMMBFJ177LT1G.pdf
MMBFJ177LT1
Hersteller: onsemi
Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFJ309LT1 mmbfj309lt1-d.pdf
MMBFJ309LT1
Hersteller: onsemi
Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFJ310LT1 MMBFJ%2CSMMBFJ3%2809%2C10%29L.pdf
MMBFJ310LT1
Hersteller: onsemi
Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBFU310LT1 mmbfu310lt1-d.pdf
MMBFU310LT1
Hersteller: onsemi
Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMJT9435T1 mmjt9435-d.pdf
MMJT9435T1
Hersteller: onsemi
Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTD12N10T4 ntd12n10-d.pdf
NTD12N10T4
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A DPAK
Produkt ist nicht verfügbar
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MMDF2P02HDR2 mmdf2p02hd-d.pdf
MMDF2P02HDR2
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
Produkt ist nicht verfügbar
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MMPQ2222AR1 mmpq2222a-d.pdf
MMPQ2222AR1
Hersteller: onsemi
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTB85N03T4 ntp85n03-d.pdf
NTB85N03T4
Hersteller: onsemi
Description: MOSFET N-CH 28V 85A D2PAK
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PN2222 DS_488_PN2222.pdf
PN2222
Hersteller: onsemi
Description: TRANS NPN 30V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS3638A mps3638a-d.pdf
MPS3638A
Hersteller: onsemi
Description: TRANS PNP 25V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Current - Collector Cutoff (Max): 35nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5088 description 2N5088%2C%205089%20Rev3.pdf
2N5088
Hersteller: onsemi
Description: TRANS NPN 30V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5089 2N5088%2C%205089%20Rev3.pdf
2N5089
Hersteller: onsemi
Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS5179 MMBT5179.pdf
MPS5179
Hersteller: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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1N6287A 1N6267A%20Series%20Rev6.pdf
1N6287A
Hersteller: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 40.2V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE270 mje270-d.pdf
MJE270
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-126
Frequency - Transition: 6MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE371 mje371-d.pdf
MJE371
Hersteller: onsemi
Description: TRANS PNP 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE181 mje171-d.pdf
MJE181
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE13003 description mje13003-d.pdf
MJE13003
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
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MJE170 mje171-d.pdf
MJE170
Hersteller: onsemi
Description: TRANS PNP 40V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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MJE171 mje171-d.pdf
MJE171
Hersteller: onsemi
Description: TRANS PNP 60V 3A TO-126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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MJE803 mje700-d.pdf
MJE803
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
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VN2222LL VN2222LL%20Rev3.pdf
VN2222LL
Hersteller: onsemi
Description: MOSFET N-CH 60V 150MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MJ11016 mj11012-d.pdf
MJ11016
Hersteller: onsemi
Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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mj11032 mj11028-d.pdf
mj11032
Hersteller: onsemi
Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
Produkt ist nicht verfügbar
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MJH11021 mjh11017-d.pdf
MJH11021
Hersteller: onsemi
Description: TRANS PNP DARL 250V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJH11022 mjh11017-d.pdf
MJH11022
Hersteller: onsemi
Description: TRANS NPN DARL 250V 15A SOT-93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJF15031 mjf15030-d.pdf
MJF15031
Hersteller: onsemi
Description: TRANS PNP 150V 8A TO-220FP
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220FP
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Produkt ist nicht verfügbar
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MJH11017 mjh11017-d.pdf
MJH11017
Hersteller: onsemi
Description: TRANS PNP DARL 150V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJH11020 mjh11017-d.pdf
MJH11020
Hersteller: onsemi
Description: TRANS NPN DARL 200V 15A SOT93
Packaging: Tube
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Produkt ist nicht verfügbar
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MJH11019 mjh11017-d.pdf
MJH11019
Hersteller: onsemi
Description: TRANS PNP DARL 200V 15A SOT93
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 15 A
Supplier Device Package: SOT-93
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MJF6668 mjf6388-d.pdf
MJF6668
Hersteller: onsemi
Description: TRANS PNP DARL 100V 10A TO220FP
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
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MJF6388 mjf6388-d.pdf
MJF6388
Hersteller: onsemi
Description: TRANS NPN DARL 100V 10A TO220FP
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220FP
Produkt ist nicht verfügbar
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MJF44H11 mjf44h11-d.pdf
MJF44H11
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJF3055 mjf3055-d.pdf
MJF3055
Hersteller: onsemi
Description: TRANS NPN 90V 10A TO-220FP
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 90 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MJF18004 description mje18004-d.pdf
MJF18004
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO220FP
Power - Max: 35 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220FP
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MTP2P50E mtp2p50e-d.pdf
MTP2P50E
Hersteller: onsemi
Description: MOSFET P-CH 500V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1183 pF @ 25 V
Produkt ist nicht verfügbar
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MJH6284 mjh6284-d.pdf
MJH6284
Hersteller: onsemi
Description: TRANS NPN DARL 100V 20A SOT93
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Supplier Device Package: SOT-93
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
Produkt ist nicht verfügbar
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MTP23P06V mtp23p06v-d.pdf
MTP23P06V
Hersteller: onsemi
Description: MOSFET P-CH 60V 23A TO220AB
Produkt ist nicht verfügbar
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MTD6P10E mtd6p10e-d.pdf
MTD6P10E
Hersteller: onsemi
Description: MOSFET P-CH 100V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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MTP2955V mtp2955v-d.pdf
MTP2955V
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MJH6287 mjh6284-d.pdf
MJH6287
Hersteller: onsemi
Description: TRANS PNP DARL 100V 20A SOT93
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Supplier Device Package: SOT-93
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Tube
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MJL3281A mjl3281a-d.pdf
MJL3281A
Hersteller: onsemi
Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
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MJL21194 description mjl21193-d.pdf
MJL21194
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
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