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NCS213RSQT2G NCS213RSQT2G onsemi ncs210r-d.pdf Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
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NCS333ASQ3T2G NCS333ASQ3T2G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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NL17SZ07EDFT2G onsemi Description: IC BUFF 1.65V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
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NOA1213CUTAG onsemi NOA1213.pdf Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
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NRVHP820MFDT3G NRVHP820MFDT3G onsemi nhp820mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP820MFDWFT1G NRVHP820MFDWFT1G onsemi nhp820mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT1G NRVHP8H200MFDT1G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT3G NRVHP8H200MFDT3G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDWFT1G NRVHP8H200MFDWFT1G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NSR201MXT5G NSR201MXT5G onsemi nsr201mx-d.pdf Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
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NSVF4015SG4T1G NSVF4015SG4T1G onsemi nsvf4015sg4-d.pdf Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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NTHL065N65S3F NTHL065N65S3F onsemi nthl065n65s3f-d.pdf Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
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NTHL110N65S3F NTHL110N65S3F onsemi nthl110n65s3f-d.pdf Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
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NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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NVMFS5C426NLT1G NVMFS5C426NLT1G onsemi nvmfs5c426nl-d.pdf Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C638NLT1G NVMFS5C638NLT1G onsemi nvmfs5c638nl-d.pdf Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H800NT1G NVMFS6H800NT1G onsemi nvmfs6h800n-d.pdf Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
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AR0130CSSC00SPCA0-DPBR2 AR0130CSSC00SPCA0-DPBR2 onsemi ar0130cs-d.pdf Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
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AR0134CSSM00SPCA0-DPBR2 AR0134CSSM00SPCA0-DPBR2 onsemi ar0134cs-d.pdf Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
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AR0144CSSM00SUKA0-CPBR2 AR0144CSSM00SUKA0-CPBR2 onsemi ar0144cs?pdf=Y Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
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AR0230CSSC00SUEA0-DPBR2 AR0230CSSC00SUEA0-DPBR2 onsemi ar0230cs?pdf=Y Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
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AR0238CSSC12SHRA0-DP2 AR0238CSSC12SHRA0-DP2 onsemi ar0238-d.pdf Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
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AR1335CSSC11SMKA0-CP2 AR1335CSSC11SMKA0-CP2 onsemi ar1335?pdf=Y Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
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ASX340AT2C00XPED0-DPBR2 ASX340AT2C00XPED0-DPBR2 onsemi asx340at-d.pdf Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
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MT9V024IA7XTM-DP2 MT9V024IA7XTM-DP2 onsemi MT9V024_Rev8_Nov2018.pdf Description: VGA 1/3 GS CIS
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FDB9506L-F085 onsemi Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar
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AR0237ATSC12XUEA0-DPBR onsemi ar0237at?pdf=Y Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
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AR0237ATSC12XUEA0-DRBR onsemi ar0237at?pdf=Y Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
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FDG6304P-F169 FDG6304P-F169 onsemi FDG6304P_Rev5_Oct2017.PDF Description: INTEGRATED CIRCUIT
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FDG6304P-X onsemi Description: INTEGRATED CIRCUIT
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FGD3N60LSDTM-T FGD3N60LSDTM-T onsemi FGD3N60LSD_Rev2_Oct2017.PDF Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Produkt ist nicht verfügbar
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MT9D112D00STCK15AC1-200 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9D113D00STCK25AC1-200 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9D115D00STCK25AC1-200 onsemi MT9D115_Rev5_Jan2017.pdf Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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MT9M113D00STCK24AC1-200 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9P017D00STCC48AC1-200 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9P111D00STCK28AC1-200 onsemi MT9P111_RevG_5-20-15.pdf Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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MT9T111D00STCK26AC1-200 onsemi Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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NIS5132MN1TXG-L701 NIS5132MN1TXG-L701 onsemi NIS5132_Series_Rev10_Jun2014.PDF Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar
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ESD5111PFCT5G ESD5111PFCT5G onsemi esd5101-d.pdf Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
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FAN53526UC89X FAN53526UC89X onsemi fan53526-d.pdf Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
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NCP339BFCT2G NCP339BFCT2G onsemi ncp339-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
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15GN03CA-TB-E 15GN03CA-TB-E onsemi 15GN03CA-D.PDF Description: RF TRANS NPN 10V 1.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
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15GN03MA-TL-E 15GN03MA-TL-E onsemi 15GN03MA-D.PDF Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
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1N4006FFG 1N4006FFG onsemi 1N4001-D.PDF Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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1N4007FFG 1N4007FFG onsemi 1N4001-D.PDF Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N5384BRLG 1N5384BRLG onsemi 1n5333b-d.pdf Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
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1N5946BRLG 1N5946BRLG onsemi 1N5913B-D.PDF Description: DIODE ZENER 75V 3W AXIAL
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1PMT5935BT1G 1PMT5935BT1G onsemi 1pmt5920b-d.pdf Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
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1SV263-TL-E 1SV263-TL-E onsemi en4510-d.pdf Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV264-TL-E 1SV264-TL-E onsemi 1SV264-D.PDF Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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1SV267-TB-E 1SV267-TB-E onsemi en4514-d.pdf Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
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2SA1593T-TL-E 2SA1593T-TL-E onsemi en2511-d.pdf Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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2SA2012-TD-E 2SA2012-TD-E onsemi 2sa2012-d.pdf Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SB1121S-TD-E 2SB1121S-TD-E onsemi en1787b-d.pdf Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SB1205S-TL-E 2SB1205S-TL-E onsemi EN2114-D.PDF Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SB1302T-TD-E 2SB1302T-TD-E onsemi 2sb1302-d.pdf Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SB815-7-TB-E 2SB815-7-TB-E onsemi EN694-D.html Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SC4134S-TL-E 2SC4134S-TL-E onsemi en2510-d.pdf Description: TRANS NPN 100V 1A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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2SC4135S-TL-E 2SC4135S-TL-E onsemi en2511-d.pdf Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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NCS213RSQT2G ncs210r-d.pdf
NCS213RSQT2G
Hersteller: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
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NCS333ASQ3T2G ncs333-d.pdf
NCS333ASQ3T2G
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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NL17SZ07EDFT2G
Hersteller: onsemi
Description: IC BUFF 1.65V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
Produkt ist nicht verfügbar
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NOA1213CUTAG NOA1213.pdf
Hersteller: onsemi
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
Produkt ist nicht verfügbar
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NRVHP820MFDT3G nhp820mfd-d.pdf
NRVHP820MFDT3G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVHP820MFDWFT1G nhp820mfd-d.pdf
NRVHP820MFDWFT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVHP8H200MFDT1G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVHP8H200MFDT3G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDT3G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVHP8H200MFDWFT1G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDWFT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
1500+1.19 EUR
3000+1.11 EUR
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NSR201MXT5G nsr201mx-d.pdf
NSR201MXT5G
Hersteller: onsemi
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
auf Bestellung 16000 Stücke:
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AnzahlPrivatkunde
8000+0.27 EUR
16000+0.25 EUR
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NSVF4015SG4T1G nsvf4015sg4-d.pdf
NSVF4015SG4T1G
Hersteller: onsemi
Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
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NTHL065N65S3F nthl065n65s3f-d.pdf
NTHL065N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
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1+23.95 EUR
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NTHL110N65S3F nthl110n65s3f-d.pdf
NTHL110N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
auf Bestellung 668 Stücke:
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2+17.11 EUR
30+10.06 EUR
120+8.51 EUR
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NTTFS6H850NTAG nttfs6h850n-d.pdf
NTTFS6H850NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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1500+0.83 EUR
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NVMFS5C426NLT1G nvmfs5c426nl-d.pdf
NVMFS5C426NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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1500+3.55 EUR
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NVMFS5C638NLT1G nvmfs5c638nl-d.pdf
NVMFS5C638NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H800NT1G nvmfs6h800n-d.pdf
NVMFS6H800NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
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1500+4.16 EUR
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AR0130CSSC00SPCA0-DPBR2 ar0130cs-d.pdf
AR0130CSSC00SPCA0-DPBR2
Hersteller: onsemi
Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Produkt ist nicht verfügbar
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AR0134CSSM00SPCA0-DPBR2 ar0134cs-d.pdf
AR0134CSSM00SPCA0-DPBR2
Hersteller: onsemi
Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Produkt ist nicht verfügbar
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AR0144CSSM00SUKA0-CPBR2 ar0144cs?pdf=Y
AR0144CSSM00SUKA0-CPBR2
Hersteller: onsemi
Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
Produkt ist nicht verfügbar
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AR0230CSSC00SUEA0-DPBR2 ar0230cs?pdf=Y
AR0230CSSC00SUEA0-DPBR2
Hersteller: onsemi
Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
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5+62.03 EUR
10+57.64 EUR
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AR0238CSSC12SHRA0-DP2 ar0238-d.pdf
AR0238CSSC12SHRA0-DP2
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
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AR1335CSSC11SMKA0-CP2 ar1335?pdf=Y
AR1335CSSC11SMKA0-CP2
Hersteller: onsemi
Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
auf Bestellung 600 Stücke:
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50+35.22 EUR
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ASX340AT2C00XPED0-DPBR2 asx340at-d.pdf
ASX340AT2C00XPED0-DPBR2
Hersteller: onsemi
Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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MT9V024IA7XTM-DP2 MT9V024_Rev8_Nov2018.pdf
MT9V024IA7XTM-DP2
Hersteller: onsemi
Description: VGA 1/3 GS CIS
Produkt ist nicht verfügbar
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FDB9506L-F085
Hersteller: onsemi
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar
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AR0237ATSC12XUEA0-DPBR ar0237at?pdf=Y
Hersteller: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.1 EUR
5+35.82 EUR
10+34.28 EUR
25+32.5 EUR
40+31.68 EUR
80+30.58 EUR
440+28.32 EUR
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AR0237ATSC12XUEA0-DRBR ar0237at?pdf=Y
Hersteller: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.94 EUR
5+34.76 EUR
10+33.26 EUR
25+31.52 EUR
40+30.73 EUR
80+29.65 EUR
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FDG6304P-F169 FDG6304P_Rev5_Oct2017.PDF
FDG6304P-F169
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Produkt ist nicht verfügbar
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FDG6304P-X
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Produkt ist nicht verfügbar
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FGD3N60LSDTM-T FGD3N60LSD_Rev2_Oct2017.PDF
FGD3N60LSDTM-T
Hersteller: onsemi
Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Produkt ist nicht verfügbar
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MT9D112D00STCK15AC1-200
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9D113D00STCK25AC1-200
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9D115D00STCK25AC1-200 MT9D115_Rev5_Jan2017.pdf
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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MT9M113D00STCK24AC1-200
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9P017D00STCC48AC1-200
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT9P111D00STCK28AC1-200 MT9P111_RevG_5-20-15.pdf
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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MT9T111D00STCK26AC1-200
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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NIS5132MN1TXG-L701 NIS5132_Series_Rev10_Jun2014.PDF
NIS5132MN1TXG-L701
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar
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ESD5111PFCT5G esd5101-d.pdf
ESD5111PFCT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
Produkt ist nicht verfügbar
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FAN53526UC89X fan53526-d.pdf
FAN53526UC89X
Hersteller: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
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25+1.74 EUR
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NCP339BFCT2G ncp339-d.pdf
NCP339BFCT2G
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
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22+0.96 EUR
31+0.68 EUR
35+0.61 EUR
100+0.52 EUR
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15GN03CA-TB-E 15GN03CA-D.PDF
15GN03CA-TB-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
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28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
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15GN03MA-TL-E 15GN03MA-D.PDF
15GN03MA-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
Produkt ist nicht verfügbar
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1N4006FFG 1N4001-D.PDF
1N4006FFG
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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22+0.99 EUR
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1N4007FFG 1N4001-D.PDF
1N4007FFG
Hersteller: onsemi
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N5384BRLG 1n5333b-d.pdf
1N5384BRLG
Hersteller: onsemi
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
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72+0.3 EUR
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1N5946BRLG 1N5913B-D.PDF
1N5946BRLG
Hersteller: onsemi
Description: DIODE ZENER 75V 3W AXIAL
auf Bestellung 1659 Stücke:
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20+1.09 EUR
32+0.67 EUR
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1PMT5935BT1G 1pmt5920b-d.pdf
1PMT5935BT1G
Hersteller: onsemi
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
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20+1.05 EUR
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1SV263-TL-E en4510-d.pdf
1SV263-TL-E
Hersteller: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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1SV264-TL-E 1SV264-D.PDF
1SV264-TL-E
Hersteller: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
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18+1.21 EUR
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1SV267-TB-E en4514-d.pdf
1SV267-TB-E
Hersteller: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
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18+1.18 EUR
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2SA1593T-TL-E en2511-d.pdf
2SA1593T-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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15+1.44 EUR
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2SA2012-TD-E 2sa2012-d.pdf
2SA2012-TD-E
Hersteller: onsemi
Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SB1121S-TD-E en1787b-d.pdf
2SB1121S-TD-E
Hersteller: onsemi
Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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17+1.24 EUR
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2SB1205S-TL-E EN2114-D.PDF
2SB1205S-TL-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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9+2.48 EUR
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2SB1302T-TD-E 2sb1302-d.pdf
2SB1302T-TD-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Hersteller: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 2920 Stücke:
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AnzahlPrivatkunde
23+0.92 EUR
38+0.57 EUR
100+0.36 EUR
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2SC4134S-TL-E en2510-d.pdf
2SC4134S-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 1A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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11+1.93 EUR
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100+0.8 EUR
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2SC4135S-TL-E en2511-d.pdf
2SC4135S-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 262 Stücke:
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12+1.8 EUR
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100+1.08 EUR
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