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NLVPCA9535EDTR2G NLVPCA9535EDTR2G onsemi pca9535e-d.pdf Description: IC XPNDR 100KHZ I2C 24TSSOP
Part Status: Active
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 15904 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.4 EUR
10+3.47 EUR
25+2.99 EUR
100+2.45 EUR
250+2.2 EUR
500+2.04 EUR
1000+1.92 EUR
Mindestbestellmenge: 4 Stücke
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NLVVHC1G125DFT1G NLVVHC1G125DFT1G onsemi mc74vhc1g125-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC88A
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 15110 Stücke:
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22+0.83 EUR
25+0.71 EUR
27+0.67 EUR
100+0.49 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.29 EUR
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NLVVHC1G132DTT1G NLVVHC1G132DTT1G onsemi mc74vhc1g132-d.pdf Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 2789 Stücke:
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18+1 EUR
21+0.86 EUR
25+0.8 EUR
100+0.6 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.35 EUR
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NRVB0530T3G NRVB0530T3G onsemi mbr0530t1-d.pdf Description: DIODE SCHOTTKY 30V 500MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVB10100MFST1G NRVB10100MFST1G onsemi mbr10100mfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 1500 Stücke:
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8+2.41 EUR
12+1.52 EUR
100+1.01 EUR
500+0.79 EUR
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NRVBB20100CTT4G NRVBB20100CTT4G onsemi mbrb20100ct-d.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 800 Stücke:
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4+4.75 EUR
10+3.04 EUR
100+2.14 EUR
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NRVBS4201T3G NRVBS4201T3G onsemi mbrs4201t3-d.pdf Description: DIODE SCHOTTKY 200V 4A SMC
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Technology: Schottky
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 3772 Stücke:
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6+3.29 EUR
10+2.3 EUR
100+1.83 EUR
500+1.46 EUR
1000+1.35 EUR
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NRVS1504T3G NRVS1504T3G onsemi mrs1504t3-d.pdf Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NSR01F30MXT5G NSR01F30MXT5G onsemi nsr01f30mx-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 49 Stücke:
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33+0.55 EUR
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NSS60100DMTTBG NSS60100DMTTBG onsemi nss60100dmt-d.pdf Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5413 Stücke:
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17+1.06 EUR
20+0.9 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.4 EUR
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NSS60101DMTTBG NSS60101DMTTBG onsemi nss60101dmt-d.pdf Description: TRANS 2NPN 60V 1A 6WDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
auf Bestellung 3765 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
23+0.78 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.39 EUR
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NSV1C301ET4G-VF01 NSV1C301ET4G-VF01 onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A 3DPAK
auf Bestellung 7485 Stücke:
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NSV20200LT1G NSV20200LT1G onsemi nss20200l-d.pdf Description: TRANS PNP 20V 2A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 460 mW
auf Bestellung 623740 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
26+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.3 EUR
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NSV40201LT1G NSV40201LT1G onsemi nss40201l-d.pdf Description: TRANS NPN 40V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5065 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
28+0.63 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
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NSV40302PDR2G NSV40302PDR2G onsemi nss40302p-d.pdf Description: TRANS NPN/PNP 40V 3A 8SOIC
Supplier Device Package: 8-SOIC
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 3A
Power - Max: 653mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
16+1.17 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
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NSV60601MZ4T1G NSV60601MZ4T1G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 751 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
22+0.83 EUR
100+0.58 EUR
500+0.48 EUR
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NSVBAS21HT1G NSVBAS21HT1G onsemi bas21ht1-d.pdf Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16388 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
96+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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NSVBAS21SLT1G NSVBAS21SLT1G onsemi bas21slt1-d.pdf Description: DIODE STANDARD 250V 225MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15548 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
92+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
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NSVBAT54LT1G NSVBAT54LT1G onsemi bat54lt1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOT233
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 7023 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
112+0.16 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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NSVBAV99WT3G NSVBAV99WT3G onsemi bav99wt1-d.pdf Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
80+0.22 EUR
128+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
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NSVBC817-16LT1G NSVBC817-16LT1G onsemi bc817-16lt1-d.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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NSVBC817-40WT1G NSVBC817-40WT1G onsemi bc817-40w-d.pdf Description: TRANS NPN 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
Mindestbestellmenge: 53 Stücke
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NSVBC846BM3T5G NSVBC846BM3T5G onsemi bc846bm3-d.pdf Description: TRANS NPN 65V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
auf Bestellung 6612 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
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NSVBC847BLT3G NSVBC847BLT3G onsemi bc846alt1-d.pdf Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 23830 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.1 EUR
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NSVBC848CLT1G NSVBC848CLT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
auf Bestellung 85391 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
130+0.14 EUR
211+0.084 EUR
500+0.061 EUR
1000+0.053 EUR
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NSVBC856BM3T5G NSVBC856BM3T5G onsemi bc856bm3-d.pdf Description: TRANS PNP 65V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
auf Bestellung 32 Stücke:
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NSVBC857CWT1G NSVBC857CWT1G onsemi bc856bwt1-d.pdf Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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NSVBC858BLT1G NSVBC858BLT1G onsemi bc856alt1-d.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC858CLT1G NSVBC858CLT1G onsemi bc856alt1-d.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
107+0.17 EUR
173+0.1 EUR
500+0.074 EUR
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NSVBSS63LT1G NSVBSS63LT1G onsemi bss63lt1-d.pdf Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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NSVD4001DR2G NSVD4001DR2G onsemi nud4001-d.pdf Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9539 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
18+1 EUR
25+0.9 EUR
100+0.79 EUR
250+0.74 EUR
500+0.71 EUR
1000+0.69 EUR
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NSVDAN222T1G NSVDAN222T1G onsemi dan222-d.pdf Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
auf Bestellung 8693 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
69+0.26 EUR
112+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 46 Stücke
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NSVDTC143ZET1G NSVDTC143ZET1G onsemi dtc143z-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
97+0.18 EUR
156+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
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NSVJ3557SA3T1G NSVJ3557SA3T1G onsemi nsvj3557sa3-d.pdf Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-59-3/CP3
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
auf Bestellung 10281 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
28+0.64 EUR
100+0.48 EUR
500+0.4 EUR
1000+0.36 EUR
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NSVMMBT2907AWT1G NSVMMBT2907AWT1G onsemi mmbt2907awt1-d.pdf Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8220 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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NSVMMBT5401LT3G NSVMMBT5401LT3G onsemi mmbt5401lt1-d.pdf Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
auf Bestellung 3595 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
97+0.18 EUR
156+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
2000+0.064 EUR
Mindestbestellmenge: 59 Stücke
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NSVMMBTH10LT1G NSVMMBTH10LT1G onsemi mmbth10lt1-d.pdf Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
auf Bestellung 11713 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+0.27 EUR
74+0.24 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 46 Stücke
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NSVMMUN2133LT1G NSVMMUN2133LT1G onsemi dta143z-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 31472 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
143+0.12 EUR
215+0.082 EUR
500+0.062 EUR
1000+0.056 EUR
Mindestbestellmenge: 100 Stücke
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NSVMMUN2212LT1G NSVMMUN2212LT1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1144 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
108+0.16 EUR
176+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
Mindestbestellmenge: 67 Stücke
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NSVMMUN2232LT1G NSVMMUN2232LT1G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
114+0.15 EUR
184+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 67 Stücke
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NSVMMUN2235LT1G NSVMMUN2235LT1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
114+0.15 EUR
184+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 67 Stücke
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NSVMUN5211DW1T3G NSVMUN5211DW1T3G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SC88
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
64+0.28 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.086 EUR
Mindestbestellmenge: 39 Stücke
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NSVMUN5312DW1T2G NSVMUN5312DW1T2G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
72+0.24 EUR
115+0.15 EUR
Mindestbestellmenge: 44 Stücke
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NSVR0170HT1G NSVR0170HT1G onsemi nsr0170-d.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Technology: Schottky
auf Bestellung 20563 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
164+0.11 EUR
179+0.098 EUR
500+0.072 EUR
1000+0.068 EUR
Mindestbestellmenge: 112 Stücke
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NSVR0240V2T1G NSVR0240V2T1G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 29751 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
61+0.29 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 39 Stücke
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NSVR0340HT1G NSVR0340HT1G onsemi nsr0340h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NSVR05F40NXT5G NSVR05F40NXT5G onsemi nsr05f40-d.pdf Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18565 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
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NSVR1020MW2T1G NSVR1020MW2T1G onsemi nsr1020mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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NSVRB521S30T1G NSVRB521S30T1G onsemi rb521s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVRB751S40T1G NSVRB751S40T1G onsemi rb751s40t1-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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NTA4151PT1H NTA4151PT1H onsemi nta4151p-d.pdf Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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NTMFD4C20NT1G NTMFD4C20NT1G onsemi ntmfd4c20n-d.pdf Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NTMFS4985NFT1G NTMFS4985NFT1G onsemi ntmfs4985nf-d.pdf Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
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NTMFS5C404NLT1G NTMFS5C404NLT1G onsemi ntmfs5c404nl-d.pdf Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
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NTR3A052PZT1G NTR3A052PZT1G onsemi ntr3a052pz-d.pdf Description: MOSFET P-CH 20V 3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTR5105PT1G NTR5105PT1G onsemi ntr5105p-d.pdf Description: MOSFET P-CH 60V 196MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 347mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTS260ESFT3G NTS260ESFT3G onsemi nts260esf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
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NTSB30U100CTT4G NTSB30U100CTT4G onsemi ntst30u100ct-d.pdf Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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NTTFS4C06NTWG NTTFS4C06NTWG onsemi nttfs4c06n-d.pdf Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NTTFS4C10NTAG NTTFS4C10NTAG onsemi nttfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 1431 Stücke:
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NLVPCA9535EDTR2G pca9535e-d.pdf
NLVPCA9535EDTR2G
Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C 24TSSOP
Part Status: Active
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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NLVVHC1G125DFT1G mc74vhc1g125-d.pdf
NLVVHC1G125DFT1G
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 15110 Stücke:
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NLVVHC1G132DTT1G mc74vhc1g132-d.pdf
NLVVHC1G132DTT1G
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 2789 Stücke:
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18+1 EUR
21+0.86 EUR
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NRVB0530T3G mbr0530t1-d.pdf
NRVB0530T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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NRVB10100MFST1G mbr10100mfs-d.pdf
NRVB10100MFST1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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8+2.41 EUR
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NRVBB20100CTT4G mbrb20100ct-d.pdf
NRVBB20100CTT4G
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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4+4.75 EUR
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NRVBS4201T3G mbrs4201t3-d.pdf
NRVBS4201T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 4A SMC
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Technology: Schottky
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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6+3.29 EUR
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NRVS1504T3G mrs1504t3-d.pdf
NRVS1504T3G
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1.5A SMB
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1.5A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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NSR01F30MXT5G nsr01f30mx-d.pdf
NSR01F30MXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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AnzahlPreis
33+0.55 EUR
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NSS60100DMTTBG nss60100dmt-d.pdf
NSS60100DMTTBG
Hersteller: onsemi
Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5413 Stücke:
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17+1.06 EUR
20+0.9 EUR
100+0.63 EUR
500+0.49 EUR
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NSS60101DMTTBG nss60101dmt-d.pdf
NSS60101DMTTBG
Hersteller: onsemi
Description: TRANS 2NPN 60V 1A 6WDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
auf Bestellung 3765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.16 EUR
23+0.78 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.39 EUR
Mindestbestellmenge: 16 Stücke
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NSV1C301ET4G-VF01 nss1c301e-d.pdf
NSV1C301ET4G-VF01
Hersteller: onsemi
Description: TRANS NPN 100V 3A 3DPAK
auf Bestellung 7485 Stücke:
Lieferzeit 10-14 Tag (e)
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NSV20200LT1G nss20200l-d.pdf
NSV20200LT1G
Hersteller: onsemi
Description: TRANS PNP 20V 2A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 460 mW
auf Bestellung 623740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.79 EUR
26+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.3 EUR
Mindestbestellmenge: 23 Stücke
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NSV40201LT1G nss40201l-d.pdf
NSV40201LT1G
Hersteller: onsemi
Description: TRANS NPN 40V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5065 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
28+0.63 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 18 Stücke
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NSV40302PDR2G nss40302p-d.pdf
NSV40302PDR2G
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 3A 8SOIC
Supplier Device Package: 8-SOIC
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 3A
Power - Max: 653mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.36 EUR
16+1.17 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
Mindestbestellmenge: 13 Stücke
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NSV60601MZ4T1G nss60601mz4-d.pdf
NSV60601MZ4T1G
Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 751 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.97 EUR
22+0.83 EUR
100+0.58 EUR
500+0.48 EUR
Mindestbestellmenge: 19 Stücke
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NSVBAS21HT1G bas21ht1-d.pdf
NSVBAS21HT1G
Hersteller: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
96+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 59 Stücke
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NSVBAS21SLT1G bas21slt1-d.pdf
NSVBAS21SLT1G
Hersteller: onsemi
Description: DIODE STANDARD 250V 225MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15548 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
92+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 56 Stücke
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NSVBAT54LT1G bat54lt1-d.pdf
NSVBAT54LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT233
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 7023 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
112+0.16 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 67 Stücke
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NSVBAV99WT3G bav99wt1-d.pdf
NSVBAV99WT3G
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
80+0.22 EUR
128+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
Mindestbestellmenge: 48 Stücke
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NSVBC817-16LT1G bc817-16lt1-d.pdf
NSVBC817-16LT1G
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC817-40WT1G bc817-40w-d.pdf
NSVBC817-40WT1G
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
53+0.33 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC846BM3T5G bc846bm3-d.pdf
NSVBC846BM3T5G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
auf Bestellung 6612 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 39 Stücke
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NSVBC847BLT3G bc846alt1-d.pdf
NSVBC847BLT3G
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 23830 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 33 Stücke
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NSVBC848CLT1G bc846alt1-d.pdf
NSVBC848CLT1G
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
auf Bestellung 85391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
77+0.23 EUR
130+0.14 EUR
211+0.084 EUR
500+0.061 EUR
1000+0.053 EUR
Mindestbestellmenge: 77 Stücke
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NSVBC856BM3T5G bc856bm3-d.pdf
NSVBC856BM3T5G
Hersteller: onsemi
Description: TRANS PNP 65V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
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NSVBC857CWT1G bc856bwt1-d.pdf
NSVBC857CWT1G
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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NSVBC858BLT1G bc856alt1-d.pdf
NSVBC858BLT1G
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC858CLT1G bc856alt1-d.pdf
NSVBC858CLT1G
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
107+0.17 EUR
173+0.1 EUR
500+0.074 EUR
Mindestbestellmenge: 67 Stücke
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NSVBSS63LT1G bss63lt1-d.pdf
NSVBSS63LT1G
Hersteller: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVD4001DR2G nud4001-d.pdf
NSVD4001DR2G
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.39 EUR
18+1 EUR
25+0.9 EUR
100+0.79 EUR
250+0.74 EUR
500+0.71 EUR
1000+0.69 EUR
Mindestbestellmenge: 13 Stücke
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NSVDAN222T1G dan222-d.pdf
NSVDAN222T1G
Hersteller: onsemi
Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
auf Bestellung 8693 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
69+0.26 EUR
112+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 46 Stücke
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NSVDTC143ZET1G dtc143z-d.pdf
NSVDTC143ZET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
97+0.18 EUR
156+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
Mindestbestellmenge: 59 Stücke
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NSVJ3557SA3T1G nsvj3557sa3-d.pdf
NSVJ3557SA3T1G
Hersteller: onsemi
Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-59-3/CP3
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
auf Bestellung 10281 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.88 EUR
28+0.64 EUR
100+0.48 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 20 Stücke
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NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
NSVMMBT2907AWT1G
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8220 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 33 Stücke
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NSVMMBT5401LT3G mmbt5401lt1-d.pdf
NSVMMBT5401LT3G
Hersteller: onsemi
Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
auf Bestellung 3595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
97+0.18 EUR
156+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
2000+0.064 EUR
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NSVMMBTH10LT1G mmbth10lt1-d.pdf
NSVMMBTH10LT1G
Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
auf Bestellung 11713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
65+0.27 EUR
74+0.24 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 46 Stücke
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NSVMMUN2133LT1G dta143z-d.pdf
NSVMMUN2133LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 31472 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
100+0.18 EUR
143+0.12 EUR
215+0.082 EUR
500+0.062 EUR
1000+0.056 EUR
Mindestbestellmenge: 100 Stücke
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NSVMMUN2212LT1G dtc124e-d.pdf
NSVMMUN2212LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 1144 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
108+0.16 EUR
176+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
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NSVMMUN2232LT1G dtc143e-d.pdf
NSVMMUN2232LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
114+0.15 EUR
184+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 67 Stücke
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NSVMMUN2235LT1G dtc123j-d.pdf
NSVMMUN2235LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
114+0.15 EUR
184+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 67 Stücke
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NSVMUN5211DW1T3G dtc114ed-d.pdf
NSVMUN5211DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SC88
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
64+0.28 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.086 EUR
Mindestbestellmenge: 39 Stücke
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NSVMUN5312DW1T2G dtc124ep-d.pdf
NSVMUN5312DW1T2G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
44+0.4 EUR
72+0.24 EUR
115+0.15 EUR
Mindestbestellmenge: 44 Stücke
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NSVR0170HT1G nsr0170-d.pdf
NSVR0170HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Technology: Schottky
auf Bestellung 20563 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
112+0.16 EUR
164+0.11 EUR
179+0.098 EUR
500+0.072 EUR
1000+0.068 EUR
Mindestbestellmenge: 112 Stücke
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NSVR0240V2T1G nsr0240v2t1-d.pdf
NSVR0240V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 29751 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
61+0.29 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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NSVR0340HT1G nsr0340h-d.pdf
NSVR0340HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NSVR05F40NXT5G nsr05f40-d.pdf
NSVR05F40NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18565 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.92 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20 Stücke
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NSVR1020MW2T1G nsr1020mw2t1-d.pdf
NSVR1020MW2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 64381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
38+0.48 EUR
57+0.31 EUR
100+0.23 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 38 Stücke
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NSVRB521S30T1G rb521s30t1-d.pdf
NSVRB521S30T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVRB751S40T1G rb751s40t1-d.pdf
NSVRB751S40T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
63+0.28 EUR
100+0.18 EUR
163+0.11 EUR
Mindestbestellmenge: 63 Stücke
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NTA4151PT1H nta4151p-d.pdf
NTA4151PT1H
Hersteller: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 155939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
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NTMFD4C20NT1G ntmfd4c20n-d.pdf
NTMFD4C20NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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NTMFS4985NFT1G ntmfs4985nf-d.pdf
NTMFS4985NFT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.21 EUR
Mindestbestellmenge: 8 Stücke
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NTMFS5C404NLT1G ntmfs5c404nl-d.pdf
NTMFS5C404NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
auf Bestellung 241984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.6 EUR
10+5.56 EUR
100+4.26 EUR
500+3.78 EUR
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NTR3A052PZT1G ntr3a052pz-d.pdf
NTR3A052PZT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.29 EUR
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NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 196MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 347mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 182913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
80+0.22 EUR
128+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
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NTS260ESFT3G nts260esf-d.pdf
NTS260ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Produkt ist nicht verfügbar
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NTSB30U100CTT4G ntst30u100ct-d.pdf
NTSB30U100CTT4G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTTFS4C06NTWG nttfs4c06n-d.pdf
NTTFS4C06NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTTFS4C10NTAG nttfs4c10n-d.pdf
NTTFS4C10NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.65 EUR
17+1.06 EUR
100+0.72 EUR
500+0.56 EUR
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