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NSVBSS63LT1G NSVBSS63LT1G onsemi bss63lt1-d.pdf Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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NSVD4001DR2G NSVD4001DR2G onsemi nud4001-d.pdf Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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250+0.88 EUR
500+0.84 EUR
1000+0.82 EUR
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NSVDAN222T1G NSVDAN222T1G onsemi dan222-d.pdf Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
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69+0.31 EUR
112+0.19 EUR
500+0.17 EUR
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NSVDTC143ZET1G NSVDTC143ZET1G onsemi dtc143z-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NSVJ3557SA3T1G NSVJ3557SA3T1G onsemi nsvj3557sa3-d.pdf Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-59-3/CP3
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
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NSVMMBT2907AWT1G NSVMMBT2907AWT1G onsemi mmbt2907awt1-d.pdf Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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53+0.4 EUR
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NSVMMBT5401LT3G NSVMMBT5401LT3G onsemi mmbt5401lt1-d.pdf Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
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94+0.23 EUR
152+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
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NSVMMBTH10LT1G NSVMMBTH10LT1G onsemi mmbth10lt1-d.pdf Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
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65+0.32 EUR
74+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
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NSVMMUN2133LT1G NSVMMUN2133LT1G onsemi dta143z-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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143+0.14 EUR
215+0.098 EUR
500+0.074 EUR
1000+0.067 EUR
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NSVMMUN2212LT1G NSVMMUN2212LT1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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63+0.33 EUR
105+0.2 EUR
171+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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NSVMMUN2232LT1G NSVMMUN2232LT1G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
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67+0.31 EUR
114+0.18 EUR
184+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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NSVMMUN2235LT1G NSVMMUN2235LT1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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63+0.33 EUR
105+0.2 EUR
171+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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NSVMUN5211DW1T3G NSVMUN5211DW1T3G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-363
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Produkt ist nicht verfügbar
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NSVMUN5312DW1T2G NSVMUN5312DW1T2G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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67+0.32 EUR
107+0.2 EUR
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NSVR0170HT1G NSVR0170HT1G onsemi nsr0170-d.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Technology: Schottky
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112+0.19 EUR
164+0.13 EUR
179+0.12 EUR
500+0.086 EUR
1000+0.081 EUR
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NSVR0240V2T1G NSVR0240V2T1G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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NSVR0340HT1G NSVR0340HT1G onsemi nsr0340h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NSVR05F40NXT5G NSVR05F40NXT5G onsemi nsr05f40-d.pdf Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.26 EUR
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NSVR1020MW2T1G NSVR1020MW2T1G onsemi nsr1020mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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57+0.37 EUR
100+0.27 EUR
500+0.19 EUR
1000+0.18 EUR
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NSVRB521S30T1G NSVRB521S30T1G onsemi rb521s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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52+0.4 EUR
100+0.26 EUR
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NSVRB751S40T1G NSVRB751S40T1G onsemi rb751s40t1-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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63+0.33 EUR
100+0.21 EUR
163+0.13 EUR
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NTA4151PT1H NTA4151PT1H onsemi nta4151p-d.pdf Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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38+0.56 EUR
100+0.29 EUR
500+0.25 EUR
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NTMFD4C20NT1G NTMFD4C20NT1G onsemi ntmfd4c20n-d.pdf Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NTMFS4985NFT1G NTMFS4985NFT1G onsemi ntmfs4985nf-d.pdf Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
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NTMFS5C404NLT1G NTMFS5C404NLT1G onsemi ntmfs5c404nl-d.pdf Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
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NTR3A052PZT1G NTR3A052PZT1G onsemi ntr3a052pz-d.pdf Description: MOSFET P-CH 20V 3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTR5105PT1G NTR5105PT1G onsemi ntr5105p-d.pdf Description: MOSFET P-CH 60V 196MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 347mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTS260ESFT3G NTS260ESFT3G onsemi nts260esf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
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NTSB30U100CTT4G NTSB30U100CTT4G onsemi ntst30u100ct-d.pdf Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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NTTFS4C06NTWG NTTFS4C06NTWG onsemi nttfs4c06n-d.pdf Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NTTFS4C10NTAG NTTFS4C10NTAG onsemi nttfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
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NTTFS4C10NTWG NTTFS4C10NTWG onsemi nttfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NTTFS4C13NTAG NTTFS4C13NTAG onsemi nttfs4c13n-d.pdf Description: MOSFET N-CH 30V 7.2A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NUP2125WTT1G NUP2125WTT1G onsemi nup2125-d.pdf Description: TVS DIODE 24VWM 50VC SC70-3
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 50V
Voltage - Breakdown (Min): 26.2V
Bidirectional Channels: 2
Supplier Device Package: SC-70-3 (SOT323)
Voltage - Reverse Standoff (Typ): 24V (Min)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 10pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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NVD3055-150T4G-VF01 NVD3055-150T4G-VF01 onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVD5890NLT4G NVD5890NLT4G onsemi NVD5890NL.pdf Description: MOSFET N-CH 40V 24A/123A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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NVJD4401NT1G NVJD4401NT1G onsemi ntjd4401n-d.pdf Description: MOSFET 2N-CH 20V 0.63A SC88
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
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NVMFS4C03NT1G NVMFS4C03NT1G onsemi nvmfs4c03n-d.pdf Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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NVMFS5C426NAFT1G NVMFS5C426NAFT1G onsemi nvmfs5c426n-d.pdf Description: MOSFET N-CH 40V 41A/235A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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NVR4501NT1G NVR4501NT1G onsemi ntr4501n-d.pdf Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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NVS4001NT1G NVS4001NT1G onsemi nts4001n-d.pdf Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
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NVTA7002NT1G NVTA7002NT1G onsemi nta7002n-d.pdf Description: MOSFET N-CH 30V 154MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
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NVTFS4C10NWFTAG NVTFS4C10NWFTAG onsemi nvtfs4c10n-d.pdf Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
FET Type: N-Channel
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NVTFS5C670NLTAG NVTFS5C670NLTAG onsemi nvtfs5c670nl-d.pdf Description: MOSFET N-CH 60V 16A/70A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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PCA9517ADMR2G PCA9517ADMR2G onsemi pca9517a-d.pdf Description: IC VOLT LEVEL TRANSLATOR US8
Capacitance - Input: 5 pF
Part Status: Not For New Designs
Supplier Device Package: 8-MSOP
Current - Supply: 1mA
Applications: I2C
Voltage - Supply: 0.9V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Buffer, ReDriver
Mounting Type: Surface Mount
Number of Channels: 2
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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PCA9535ECMTTXG PCA9535ECMTTXG onsemi pca9535e-d.pdf Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-QFN (4x4)
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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PCA9535EDWR2G PCA9535EDWR2G onsemi pca9535e-d.pdf Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PCA9535EMTTXG PCA9535EMTTXG onsemi pca9535e-d.pdf Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-QFN (4x4)
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
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PCA9654EDR2G PCA9654EDR2G onsemi pca9654e-d.pdf Description: IC XPNDR 100KHZ I2C 16SOIC
Part Status: Active
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RB751S40T5G RB751S40T5G onsemi rb751s40t1-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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S2SC4617G S2SC4617G onsemi 2sc4617-d.pdf Description: TRANS NPN 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 125 mW
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SB05-03Q-TL-E SB05-03Q-TL-E onsemi sb05-03q-d.pdf Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
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SB80W10T-TL-H SB80W10T-TL-H onsemi ena1817-d.pdf Description: DIODE ARRAY SCHOTTKY 100V TPFA
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SBAS16HT3G SBAS16HT3G onsemi bas16ht1-d.pdf Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SBAS16WT1G SBAS16WT1G onsemi bas16wt1-d.pdf Description: DIODE STANDARD 75V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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SBAS40-04LT1G SBAS40-04LT1G onsemi bas40-04lt1-d.pdf Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SBAS40LT1G SBAS40LT1G onsemi bas40lt1-d.pdf Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SBAT54AWT1G SBAT54AWT1G onsemi bat54awt1-d.pdf Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SBAV99LT3G SBAV99LT3G onsemi bav99lt1-d.pdf Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
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SBC807-16LT1G SBC807-16LT1G onsemi bc807-16lt1-d.pdf Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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NSVBSS63LT1G bss63lt1-d.pdf
NSVBSS63LT1G
Hersteller: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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NSVD4001DR2G nud4001-d.pdf
NSVD4001DR2G
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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13+1.65 EUR
18+1.19 EUR
25+1.07 EUR
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250+0.88 EUR
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NSVDAN222T1G dan222-d.pdf
NSVDAN222T1G
Hersteller: onsemi
Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
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46+0.46 EUR
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NSVDTC143ZET1G dtc143z-d.pdf
NSVDTC143ZET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NSVJ3557SA3T1G nsvj3557sa3-d.pdf
NSVJ3557SA3T1G
Hersteller: onsemi
Description: JFET N-CH 15V 50MA SC59-3/CP3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-59-3/CP3
Current Drain (Id) - Max: 50 mA
Voltage - Breakdown (V(BR)GSS): 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
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20+1.05 EUR
28+0.76 EUR
100+0.57 EUR
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NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
NSVMMBT2907AWT1G
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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33+0.65 EUR
53+0.4 EUR
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500+0.19 EUR
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NSVMMBT5401LT3G mmbt5401lt1-d.pdf
NSVMMBT5401LT3G
Hersteller: onsemi
Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
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AnzahlPrivatkunde
59+0.36 EUR
94+0.23 EUR
152+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
2000+0.079 EUR
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NSVMMBTH10LT1G mmbth10lt1-d.pdf
NSVMMBTH10LT1G
Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
auf Bestellung 11713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
65+0.32 EUR
74+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 46 Stücke
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NSVMMUN2133LT1G dta143z-d.pdf
NSVMMUN2133LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 31472 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
215+0.098 EUR
500+0.074 EUR
1000+0.067 EUR
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NSVMMUN2212LT1G dtc124e-d.pdf
NSVMMUN2212LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
105+0.2 EUR
171+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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NSVMMUN2232LT1G dtc143e-d.pdf
NSVMMUN2232LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
184+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
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NSVMMUN2235LT1G dtc123j-d.pdf
NSVMMUN2235LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
105+0.2 EUR
171+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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NSVMUN5211DW1T3G dtc114ed-d.pdf
NSVMUN5211DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-363
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Produkt ist nicht verfügbar
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NSVMUN5312DW1T2G dtc124ep-d.pdf
NSVMUN5312DW1T2G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
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NSVR0170HT1G nsr0170-d.pdf
NSVR0170HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Technology: Schottky
auf Bestellung 20563 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
164+0.13 EUR
179+0.12 EUR
500+0.086 EUR
1000+0.081 EUR
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NSVR0240V2T1G nsr0240v2t1-d.pdf
NSVR0240V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 29751 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
61+0.35 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
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NSVR0340HT1G nsr0340h-d.pdf
NSVR0340HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NSVR05F40NXT5G nsr05f40-d.pdf
NSVR05F40NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18565 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.26 EUR
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NSVR1020MW2T1G nsr1020mw2t1-d.pdf
NSVR1020MW2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 64381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
57+0.37 EUR
100+0.27 EUR
500+0.19 EUR
1000+0.18 EUR
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NSVRB521S30T1G rb521s30t1-d.pdf
NSVRB521S30T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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NSVRB751S40T1G rb751s40t1-d.pdf
NSVRB751S40T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
100+0.21 EUR
163+0.13 EUR
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NTA4151PT1H nta4151p-d.pdf
NTA4151PT1H
Hersteller: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 301mW (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 155939 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
38+0.56 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.19 EUR
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NTMFD4C20NT1G ntmfd4c20n-d.pdf
NTMFD4C20NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.09W, 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke:
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NTMFS4985NFT1G ntmfs4985nf-d.pdf
NTMFS4985NFT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
10+2.19 EUR
100+1.7 EUR
500+1.44 EUR
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NTMFS5C404NLT1G ntmfs5c404nl-d.pdf
NTMFS5C404NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
auf Bestellung 241984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.85 EUR
10+6.62 EUR
100+5.07 EUR
500+4.5 EUR
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NTR3A052PZT1G ntr3a052pz-d.pdf
NTR3A052PZT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
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NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 196MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 347mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 182913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
128+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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NTS260ESFT3G nts260esf-d.pdf
NTS260ESFT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Produkt ist nicht verfügbar
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NTSB30U100CTT4G ntst30u100ct-d.pdf
NTSB30U100CTT4G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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NTTFS4C06NTWG nttfs4c06n-d.pdf
NTTFS4C06NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NTTFS4C10NTAG nttfs4c10n-d.pdf
NTTFS4C10NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
auf Bestellung 897 Stücke:
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17+1.3 EUR
27+0.8 EUR
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NTTFS4C10NTWG nttfs4c10n-d.pdf
NTTFS4C10NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 405 Stücke:
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8+2.84 EUR
12+1.8 EUR
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NTTFS4C13NTAG nttfs4c13n-d.pdf
NTTFS4C13NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.2A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2455 Stücke:
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13+1.62 EUR
21+1.01 EUR
100+0.65 EUR
500+0.5 EUR
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NUP2125WTT1G nup2125-d.pdf
NUP2125WTT1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 50VC SC70-3
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 50V
Voltage - Breakdown (Min): 26.2V
Bidirectional Channels: 2
Supplier Device Package: SC-70-3 (SOT323)
Voltage - Reverse Standoff (Typ): 24V (Min)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 10pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 19126 Stücke:
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23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
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NVD3055-150T4G-VF01 ntd3055-150-d.pdf
NVD3055-150T4G-VF01
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4565 Stücke:
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8+2.95 EUR
12+1.88 EUR
100+1.26 EUR
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1000+0.9 EUR
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NVD5890NLT4G NVD5890NL.pdf
NVD5890NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 24A/123A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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NVJD4401NT1G ntjd4401n-d.pdf
NVJD4401NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
auf Bestellung 42376 Stücke:
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14+1.59 EUR
22+0.99 EUR
100+0.64 EUR
500+0.49 EUR
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NVMFS4C03NT1G nvmfs4c03n-d.pdf
NVMFS4C03NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 2850 Stücke:
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5+5.13 EUR
10+3.36 EUR
100+2.32 EUR
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NVMFS5C426NAFT1G nvmfs5c426n-d.pdf
NVMFS5C426NAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 51309 Stücke:
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3+8.52 EUR
10+5.62 EUR
100+3.97 EUR
500+3.27 EUR
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NVR4501NT1G ntr4501n-d.pdf
NVR4501NT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15585 Stücke:
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16+1.36 EUR
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NVS4001NT1G nts4001n-d.pdf
NVS4001NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26956 Stücke:
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25+0.86 EUR
40+0.52 EUR
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NVTA7002NT1G nta7002n-d.pdf
NVTA7002NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 154MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33329 Stücke:
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34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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NVTFS4C10NWFTAG nvtfs4c10n-d.pdf
NVTFS4C10NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
FET Type: N-Channel
auf Bestellung 998 Stücke:
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8+2.67 EUR
11+2.02 EUR
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NVTFS5C670NLTAG nvtfs5c670nl-d.pdf
NVTFS5C670NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2450 Stücke:
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7+3.22 EUR
10+2.48 EUR
100+1.69 EUR
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PCA9517ADMR2G pca9517a-d.pdf
PCA9517ADMR2G
Hersteller: onsemi
Description: IC VOLT LEVEL TRANSLATOR US8
Capacitance - Input: 5 pF
Part Status: Not For New Designs
Supplier Device Package: 8-MSOP
Current - Supply: 1mA
Applications: I2C
Voltage - Supply: 0.9V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Buffer, ReDriver
Mounting Type: Surface Mount
Number of Channels: 2
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5564 Stücke:
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5+4.61 EUR
10+4.14 EUR
25+3.92 EUR
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250+2.74 EUR
500+2.65 EUR
1000+2.11 EUR
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PCA9535ECMTTXG pca9535e-d.pdf
PCA9535ECMTTXG
Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-QFN (4x4)
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 1469 Stücke:
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4+6.39 EUR
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PCA9535EDWR2G pca9535e-d.pdf
PCA9535EDWR2G
Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PCA9535EMTTXG pca9535e-d.pdf
PCA9535EMTTXG
Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-QFN (4x4)
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
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PCA9654EDR2G pca9654e-d.pdf
PCA9654EDR2G
Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C 16SOIC
Part Status: Active
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RB751S40T5G rb751s40t1-d.pdf
RB751S40T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
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S2SC4617G 2sc4617-d.pdf
S2SC4617G
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 125 mW
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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SB05-03Q-TL-E sb05-03q-d.pdf
SB05-03Q-TL-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Produkt ist nicht verfügbar
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SB80W10T-TL-H ena1817-d.pdf
SB80W10T-TL-H
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 100V TPFA
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
10+3.83 EUR
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SBAS16HT3G bas16ht1-d.pdf
SBAS16HT3G
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
143+0.14 EUR
Mindestbestellmenge: 91 Stücke
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SBAS16WT1G bas16wt1-d.pdf
SBAS16WT1G
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29876 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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SBAS40-04LT1G bas40-04lt1-d.pdf
SBAS40-04LT1G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 44 Stücke
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SBAS40LT1G bas40lt1-d.pdf
SBAS40LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
102+0.2 EUR
165+0.13 EUR
500+0.093 EUR
1000+0.081 EUR
Mindestbestellmenge: 63 Stücke
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SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SBAV99LT3G bav99lt1-d.pdf
SBAV99LT3G
Hersteller: onsemi
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 344667 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
125+0.17 EUR
177+0.12 EUR
204+0.1 EUR
500+0.074 EUR
Mindestbestellmenge: 77 Stücke
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SBC807-16LT1G bc807-16lt1-d.pdf
SBC807-16LT1G
Hersteller: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
67+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42 Stücke
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