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ESDM3551MXT5G ESDM3551MXT5G onsemi esdm3551-d.pdf Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
auf Bestellung 2776 Stücke:
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33+0.55 EUR
46+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.099 EUR
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LB11861MC-W-AH onsemi LB11861MC_May2013.pdf Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
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LV58063MCZ-AH LV58063MCZ-AH onsemi LV58063MC_Jul2014.pdf Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FCH099N65S3-F155 FCH099N65S3-F155 onsemi fch099n65s3-d.pdf Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 1089 Stücke:
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FCP360N65S3R0 FCP360N65S3R0 onsemi fcp360n65s3r0-d.pdf Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
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FCPF250N65S3R0L FCPF250N65S3R0L onsemi fcpf250n65s3r0l-d.pdf Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Produkt ist nicht verfügbar
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FDB9409L-F085 FDB9409L-F085 onsemi fdb9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDC642P-F085P FDC642P-F085P onsemi fdc642p_f085-d.pdf Description: MOSFET P-CH 20V 4A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085P FDD4243-F085P onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8444-F085P FDD8444-F085P onsemi fdd4685_f085-d.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8445-F085P FDD8445-F085P onsemi FDD8445-F085.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD86250-F085 FDD86250-F085 onsemi fdd86250_f085-d.pdf Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+1.38 EUR
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FDD9409L-F085 FDD9409L-F085 onsemi fdd9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDWS9508L-F085 FDWS9508L-F085 onsemi FDWS9508L-F085-D.PDF Description: MOSFET P-CH 40V 80A 8PQFN
Produkt ist nicht verfügbar
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FDWS9509L-F085 FDWS9509L-F085 onsemi fdws9509l-f085-d.pdf Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FFSH15120A FFSH15120A onsemi ffsh15120a-d.pdf Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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FGH40T65SQD-F155 FGH40T65SQD-F155 onsemi fgh40t65sqd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
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FGH40T65UQDF-F155 FGH40T65UQDF-F155 onsemi fgh40t65uqdf-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 FGH75T65SQDT-F155 onsemi fgh75t65sqdt-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 396 Stücke:
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FQB34P10TM-F085P FQB34P10TM-F085P onsemi FQB34P10TM-F085_Rev2_Sep2017.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Produkt ist nicht verfügbar
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FSUSB42UMX-SN00404 FSUSB42UMX-SN00404 onsemi Description: USB SWITCH
Packaging: Tape & Reel (TR)
Features: Break-Before-Make, USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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MARS1-AR0136AT3-GEVB MARS1-AR0136AT3-GEVB onsemi MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
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NCL30060B3DR2G NCL30060B3DR2G onsemi ncl30060-d.pdf Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
Produkt ist nicht verfügbar
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NCP1076ABP100G NCP1076ABP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
auf Bestellung 240 Stücke:
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NCP1077BBP100G NCP1077BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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NCP145AMX100TCG NCP145AMX100TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP145AMX120TCG NCP145AMX120TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP1602ACCSNT1G NCP1602ACCSNT1G onsemi ncp1602-d.pdf Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Produkt ist nicht verfügbar
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NCP4306DAHZZAASNT1G NCP4306DAHZZAASNT1G onsemi ncp4306-d.pdf Description: SECONDARY SIDE SYNCHRONOU
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
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NCV78247DQ0R2G onsemi Description: NCV78247 LED PIXEL LIGHT
Produkt ist nicht verfügbar
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NCV8163AMX180TBG NCV8163AMX180TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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NCV8163AMX270TBG NCV8163AMX270TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.7V 250MA 4XDFN
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NCV8163AMX280TBG NCV8163AMX280TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.8V 250MA 4XDFN
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NCV8163AMX330TBG NCV8163AMX330TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 3.3V 250MA 4XDFN
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NTB082N65S3F NTB082N65S3F onsemi ntb082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
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NTHL040N65S3F NTHL040N65S3F onsemi nthl040n65s3f-d.pdf Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
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NTPF082N65S3F NTPF082N65S3F onsemi ntpf082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
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NVMFS5A140PLZT1G NVMFS5A140PLZT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5A140PLZWFT1G NVMFS5A140PLZWFT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RURD660S9A-F085P RURD660S9A-F085P onsemi rurd660s9a_f085-d.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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RURP15100-F085P RURP15100-F085P onsemi rurp15100_f085-d.pdf Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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RURP1560-F085P RURP1560-F085P onsemi rurp1560_f085-d.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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SMMSZ4688T1G SMMSZ4688T1G onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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108+0.16 EUR
151+0.12 EUR
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UD1006FR-H UD1006FR-H onsemi ena1745-d.pdf Description: DIODE GEN PURP 600V 10A
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2SA1416T-TD-E 2SA1416T-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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2SA1552S-TL-H 2SA1552S-TL-H onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SB1204T-TL-E 2SB1204T-TL-E onsemi Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SB1215S-TL-E 2SB1215S-TL-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SB1216S-TL-E 2SB1216S-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS PNP 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SB1302S-TD-E 2SB1302S-TD-E onsemi 2sb1302-d.pdf Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SC3649T-TD-E 2SC3649T-TD-E onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 6397 Stücke:
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500+0.6 EUR
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2SC3649T-TD-H 2SC3649T-TD-H onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SC5646A-TL-H 2SC5646A-TL-H onsemi ena1120-d.pdf Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
Produkt ist nicht verfügbar
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2SC6095-TD-E 2SC6095-TD-E onsemi ena0411-d.pdf Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SC6096-TD-H 2SC6096-TD-H onsemi ena0434-d.pdf Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SD1801S-TL-E 2SD1801S-TL-E onsemi en2112-d.pdf Description: TRANS NPN 50V 2A TPFA
auf Bestellung 210 Stücke:
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16+1.16 EUR
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2SD1802T-TL-E 2SD1802T-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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8+2.5 EUR
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2SD1805F-TL-E 2SD1805F-TL-E onsemi 2sd1805-d.pdf Description: TRANS NPN 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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2SD1816T-TL-E 2SD1816T-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2SK2394-6-TB-E 2SK2394-6-TB-E onsemi 2sk2394-d.pdf Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
auf Bestellung 6993 Stücke:
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14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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ESDM3551MXT5G esdm3551-d.pdf
ESDM3551MXT5G
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
auf Bestellung 2776 Stücke:
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Anzahl Preis
33+0.55 EUR
46+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.099 EUR
Mindestbestellmenge: 33
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LB11861MC-W-AH LB11861MC_May2013.pdf
Hersteller: onsemi
Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
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LV58063MCZ-AH LV58063MC_Jul2014.pdf
LV58063MCZ-AH
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FCH099N65S3-F155 fch099n65s3-d.pdf
FCH099N65S3-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 1089 Stücke:
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Anzahl Preis
3+7.96 EUR
30+5.88 EUR
120+5.86 EUR
510+5.55 EUR
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FCP360N65S3R0 fcp360n65s3r0-d.pdf
FCP360N65S3R0
Hersteller: onsemi
Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 5122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
50+2.64 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.69 EUR
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FCPF250N65S3R0L fcpf250n65s3r0l-d.pdf
FCPF250N65S3R0L
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Produkt ist nicht verfügbar
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FDB9409L-F085 fdb9409l_f085-d.pdf
FDB9409L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDC642P-F085P fdc642p_f085-d.pdf
FDC642P-F085P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085P fdd4243_f085-d.pdf
FDD4243-F085P
Hersteller: onsemi
Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8444-F085P fdd4685_f085-d.pdf
FDD8444-F085P
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8445-F085P FDD8445-F085.pdf
FDD8445-F085P
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD86250-F085 fdd86250_f085-d.pdf
FDD86250-F085
Hersteller: onsemi
Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.38 EUR
Mindestbestellmenge: 2500
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FDD9409L-F085 fdd9409l_f085-d.pdf
FDD9409L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDWS9508L-F085 FDWS9508L-F085-D.PDF
FDWS9508L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Produkt ist nicht verfügbar
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FFSH15120A ffsh15120a-d.pdf
FFSH15120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.41 EUR
30+10.44 EUR
120+8.92 EUR
Mindestbestellmenge: 2
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FGH40T65SQD-F155 fgh40t65sqd-d.pdf
FGH40T65SQD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.69 EUR
30+4.31 EUR
120+3.56 EUR
Mindestbestellmenge: 3
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FGH40T65UQDF-F155 fgh40t65uqdf-d.pdf
FGH40T65UQDF-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
FGH75T65SQDT-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.86 EUR
30+6.24 EUR
120+5.23 EUR
Mindestbestellmenge: 2
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FQB34P10TM-F085P FQB34P10TM-F085_Rev2_Sep2017.pdf
FQB34P10TM-F085P
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Produkt ist nicht verfügbar
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FSUSB42UMX-SN00404
FSUSB42UMX-SN00404
Hersteller: onsemi
Description: USB SWITCH
Packaging: Tape & Reel (TR)
Features: Break-Before-Make, USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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MARS1-AR0136AT3-GEVB MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf
MARS1-AR0136AT3-GEVB
Hersteller: onsemi
Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+495.21 EUR
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NCL30060B3DR2G ncl30060-d.pdf
NCL30060B3DR2G
Hersteller: onsemi
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
Produkt ist nicht verfügbar
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NCP1076ABP100G ncp1076a-d.pdf
NCP1076ABP100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.5 EUR
10+2.21 EUR
50+1.67 EUR
100+1.5 EUR
Mindestbestellmenge: 6
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NCP1077BBP100G ncp1076a-d.pdf
NCP1077BBP100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.82 EUR
50+2.13 EUR
100+1.91 EUR
250+1.68 EUR
500+1.53 EUR
Mindestbestellmenge: 4
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NCP145AMX100TCG ncp145-d.pdf
NCP145AMX100TCG
Hersteller: onsemi
Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP145AMX120TCG ncp145-d.pdf
NCP145AMX120TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP1602ACCSNT1G ncp1602-d.pdf
NCP1602ACCSNT1G
Hersteller: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Produkt ist nicht verfügbar
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NCP4306DAHZZAASNT1G ncp4306-d.pdf
NCP4306DAHZZAASNT1G
Hersteller: onsemi
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.41 EUR
15000+0.4 EUR
Mindestbestellmenge: 3000
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NCV78247DQ0R2G
Hersteller: onsemi
Description: NCV78247 LED PIXEL LIGHT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8163AMX180TBG ncv8163-d.pdf
NCV8163AMX180TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.24 EUR
10000+0.23 EUR
25000+0.22 EUR
Mindestbestellmenge: 5000
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NCV8163AMX270TBG ncv8163-d.pdf
NCV8163AMX270TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.7V 250MA 4XDFN
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
15000+0.27 EUR
30000+0.26 EUR
Mindestbestellmenge: 3000
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NCV8163AMX280TBG ncv8163-d.pdf
NCV8163AMX280TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 250MA 4XDFN
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
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NCV8163AMX330TBG ncv8163-d.pdf
NCV8163AMX330TBG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 250MA 4XDFN
Produkt ist nicht verfügbar
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NTB082N65S3F ntb082n65s3f-d.pdf
NTB082N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+6.75 EUR
Mindestbestellmenge: 800
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NTHL040N65S3F nthl040n65s3f-d.pdf
NTHL040N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
auf Bestellung 2607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.29 EUR
30+16.32 EUR
120+14.26 EUR
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NTPF082N65S3F ntpf082n65s3f-d.pdf
NTPF082N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.55 EUR
50+6.83 EUR
100+6.28 EUR
Mindestbestellmenge: 2
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NVMFS5A140PLZT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZT1G
Hersteller: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5A140PLZWFT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZWFT1G
Hersteller: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RURD660S9A-F085P rurd660s9a_f085-d.pdf
RURD660S9A-F085P
Hersteller: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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RURP15100-F085P rurp15100_f085-d.pdf
RURP15100-F085P
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.19 EUR
100+1.56 EUR
800+1.21 EUR
Mindestbestellmenge: 6
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RURP1560-F085P rurp1560_f085-d.pdf
RURP1560-F085P
Hersteller: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
12+1.48 EUR
100+1.38 EUR
800+1.16 EUR
Mindestbestellmenge: 6
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SMMSZ4688T1G mmsz4678t1-d.pdf
SMMSZ4688T1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
108+0.16 EUR
151+0.12 EUR
500+0.091 EUR
1000+0.068 EUR
Mindestbestellmenge: 84
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UD1006FR-H ena1745-d.pdf
UD1006FR-H
Hersteller: onsemi
Description: DIODE GEN PURP 600V 10A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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2SA1416T-TD-E 2sa1416-d.pdf
2SA1416T-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
Mindestbestellmenge: 14
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2SA1552S-TL-H en2262-d.pdf
2SA1552S-TL-H
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.62 EUR
100+1.08 EUR
Mindestbestellmenge: 7
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2SB1204T-TL-E
2SB1204T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
2SB1215S-TL-E en2539-d.pdf
2SB1215S-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 84117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.39 EUR
100+0.93 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
2SB1216S-TL-E 2sb1216_2sd1816-d.pdf
2SB1216S-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.24 EUR
100+0.86 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
2SB1302S-TD-E 2sb1302-d.pdf
2SB1302S-TD-E
Hersteller: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SC3649T-TD-E en2007-d.pdf
2SC3649T-TD-E
Hersteller: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 6397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.77 EUR
500+0.6 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2SC3649T-TD-H en2007-d.pdf
2SC3649T-TD-H
Hersteller: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5646A-TL-H ena1120-d.pdf
2SC5646A-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
Produkt ist nicht verfügbar
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2SC6095-TD-E ena0411-d.pdf
2SC6095-TD-E
Hersteller: onsemi
Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC6096-TD-H ena0434-d.pdf
2SC6096-TD-H
Hersteller: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SD1801S-TL-E en2112-d.pdf
2SD1801S-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 2A TPFA
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+0.99 EUR
100+0.74 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
2SD1802T-TL-E 2sb1202-d.pdf
2SD1802T-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.05 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
2SD1805F-TL-E 2sd1805-d.pdf
2SD1805F-TL-E
Hersteller: onsemi
Description: TRANS NPN 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.16 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
2SD1816T-TL-E 2sb1216_2sd1816-d.pdf
2SD1816T-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2SK2394-6-TB-E 2sk2394-d.pdf
2SK2394-6-TB-E
Hersteller: onsemi
Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
auf Bestellung 6993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
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