Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDMD8680 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDMF2011 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDMF4061 | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
FDMQ8205A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Type: Bridge Rectifier Operating Temperature: -40°C ~ 85°C Voltage - Supply: 57V (Max) Applications: Power Over Ethernet (PoE) Internal Switch(s): Yes FET Type: N and P-Channel Ratio - Input:Output: Bridge (2) Supplier Device Package: 12-MLP (5x4.5) Part Status: Active Current - Supply: 400 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FDMS2D4N03S | onsemi |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FDMS8050 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FDP032N08-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDP038AN06A0-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDP047N08-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V |
auf Bestellung 7979 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
FDPC3D5N025X9D | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 74A Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-PQFN (3.3x3.3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
FDPF33N25TRDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F (LG-Formed) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDPF39N20TLDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FEBFAN9673Q-B1H5000A-GEVB | onsemi | Description: EVALUATION BOARD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FFG1040UC003X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 12-WLCSP (2.23x1.46) Fault Protection: Over Current, Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FGH40T70SHD-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/66ns Switching Energy: 1.15mJ (on), 271µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 69 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 700 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FGH50T65SQD-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/105ns Switching Energy: 180µJ (on), 45µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
FGH75T65UPD-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/216ns Switching Energy: 3.68mJ (on), 1.6mJ (off) Test Condition: 400V, 75A, 3Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FGL12040WD | onsemi |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/560ns Switching Energy: 4.1mJ (on), 1mJ (off) Test Condition: 600V, 40A, 23Ohm, 15V Gate Charge: 226 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 391 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FNB80560T3 | onsemi |
![]() Packaging: Tube Package / Case: 25-DIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 14V ~ 16.5V Applications: General Purpose Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: SPMFA-A25 Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FOD8163 | onsemi |
![]() Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 10ns, 20ns Common Mode Transient Immunity (Min): 20kV/µs Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 6120 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FODM217AR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FODM217B | onsemi |
![]() Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FODM217C | onsemi |
![]() Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 824 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FODM217DR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
FODM3022R2V-NF098 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 4-MFP Zero Crossing Circuit: No Static dV/dt (Min): 10V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FQD5N50CTM-WS | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FQP3N50C-F080 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FSL336LRDN | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Buck-Boost, Flyback Voltage - Supply (Vcc/Vdd): 26V Supplier Device Package: 7-DIP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Control Features: EN, Soft Start Power (Watts): 20 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FUSB302B10MPX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V, 5V Current - Supply: 560mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FUSB302B11MPX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V, 5V Current - Supply: 560mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 37877 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FUSB302TMPX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-MLP (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
GF001HN | onsemi |
![]() Features: Slew Rate Controlled Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: P-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: USB Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Differential Voltage - Load: 2.3V ~ 5.5V Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V Current - Output (Max): 2.7A Ratio - Input:Output: 2:1 Supplier Device Package: 8-DIP Fault Protection: Reverse Current Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
HCPL4503TSVM | onsemi |
![]() Packaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Gull Wing Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGTP7N60A4-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 150µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 60 nC Part Status: Obsolete Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
HUF75639P3-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MOC3071M | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MOC3071SM | onsemi |
![]() Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MOC3072M | onsemi |
![]() Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 5002 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MOC3072SM | onsemi |
![]() Packaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 910 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
RHRP15120-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RHRP1560-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RHRP30120-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RHRP3060-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RHRP8120-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
RHRP860-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDS4465_SN00187 | onsemi |
Description: MOSFET P-CHANNEL 20V 13.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FDS8958B_G | onsemi |
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FGD4536TM_SN00306 | onsemi |
Description: IGBT TRENCH 360V TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-252AA IGBT Type: Trench Gate Charge: 47 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 360 V Current - Collector Pulsed (Icm): 220 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FDC655BN_NBNN007 | onsemi |
Description: MOSFET N-CH 30V 6.3A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MMBTH81_F080 | onsemi |
Description: RF TRANS PNP 20V 600MHZ SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 600MHz Supplier Device Package: SOT-23 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NC7SB3157L6X_F131 | onsemi | Description: IC SWITCH SPDT 6MICROPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
6385_2N2907A | onsemi |
Description: TRANS PNP 60V 0.6A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: TO-18 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
6585_2N4209 | onsemi |
Description: TRANS PNP 15V 0.05A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V Frequency - Transition: 850MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
6685_2N3906 | onsemi |
Description: TRANS PNP 40V 0.2A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 250MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
6785_2N4033 | onsemi |
Description: TRANS PNP 80V 1A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
FSB127AHN | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 70% Internal Switch(s): Four Switches Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6V ~ 30V Supplier Device Package: 8-DIP Fault Protection: Over Voltage Voltage - Start Up: 12 V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FSBB30CH60CS | onsemi |
Description: SMART POWER MODULE Packaging: Bulk Package / Case: 27-DIP Module Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 30 A Voltage: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
KA431AZTA_F081 | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Tolerance: ±1% Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FCA47N60F_SN00171 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V Power Dissipation (Max): 417W Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SG6105Z | onsemi |
Description: IC POWER SUPPLY SUPERVISOR 20DIP Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
FDMD8680 |
![]() |
Hersteller: onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMF2011 |
![]() |
Hersteller: onsemi
Description: MCM FAN7842 DRIVER AND MV5 100V
Description: MCM FAN7842 DRIVER AND MV5 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMF4061 |
![]() |
Hersteller: onsemi
Description: MCM FAN7842 DRIVER AND MV7 60 FE
Description: MCM FAN7842 DRIVER AND MV7 60 FE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMQ8205A |
![]() |
Hersteller: onsemi
Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS2D4N03S |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 163A 8PQFN
Description: MOSFET N-CH 30V 163A 8PQFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS8050 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 3.17 EUR |
FDP032N08-F102 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP038AN06A0-F102 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP047N08-F102 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
auf Bestellung 7979 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.9 EUR |
10+ | 3.85 EUR |
100+ | 2.69 EUR |
800+ | 2.09 EUR |
1600+ | 1.98 EUR |
FDPC3D5N025X9D |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 74A 12PQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
Description: MOSFET 2N-CH 25V 74A 12PQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDPF33N25TRDTU |
![]() |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDPF39N20TLDTU |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FEBFAN9673Q-B1H5000A-GEVB |
Hersteller: onsemi
Description: EVALUATION BOARD
Description: EVALUATION BOARD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FFG1040UC003X |
![]() |
Hersteller: onsemi
Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGH40T70SHD-F155 |
![]() |
Hersteller: onsemi
Description: IGBT TRENCH FS 700V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/66ns
Switching Energy: 1.15mJ (on), 271µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 700V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/66ns
Switching Energy: 1.15mJ (on), 271µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGH50T65SQD-F155 |
![]() |
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/105ns
Switching Energy: 180µJ (on), 45µJ (off)
Test Condition: 400V, 12.5A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.41 EUR |
30+ | 4.74 EUR |
120+ | 3.93 EUR |
FGH75T65UPD-F155 |
![]() |
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/216ns
Switching Energy: 3.68mJ (on), 1.6mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/216ns
Switching Energy: 3.68mJ (on), 1.6mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGL12040WD |
![]() |
Hersteller: onsemi
Description: IGBT TRENCH/FS 1200V 80A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/560ns
Switching Energy: 4.1mJ (on), 1mJ (off)
Test Condition: 600V, 40A, 23Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 391 W
Description: IGBT TRENCH/FS 1200V 80A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/560ns
Switching Energy: 4.1mJ (on), 1mJ (off)
Test Condition: 600V, 40A, 23Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 391 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FNB80560T3 |
![]() |
Hersteller: onsemi
Description: IC MTR DRVR 14V-16.5V SPMFA-A25
Packaging: Tube
Package / Case: 25-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 14V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: SPMFA-A25
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MTR DRVR 14V-16.5V SPMFA-A25
Packaging: Tube
Package / Case: 25-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 14V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: SPMFA-A25
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD8163 |
![]() |
Hersteller: onsemi
Description: LOGIC GATE OPTOCOUPLER IN SOP 6-
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 10ns, 20ns
Common Mode Transient Immunity (Min): 20kV/µs
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: LOGIC GATE OPTOCOUPLER IN SOP 6-
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 10ns, 20ns
Common Mode Transient Immunity (Min): 20kV/µs
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.91 EUR |
10+ | 3.25 EUR |
100+ | 2.4 EUR |
500+ | 2.07 EUR |
1000+ | 1.97 EUR |
2000+ | 1.88 EUR |
5000+ | 1.79 EUR |
FODM217AR2 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.3 EUR |
FODM217B |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FODM217C |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 824 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
27+ | 0.66 EUR |
100+ | 0.48 EUR |
500+ | 0.4 EUR |
FODM217DR2 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.32 EUR |
9000+ | 0.31 EUR |
15000+ | 0.3 EUR |
21000+ | 0.29 EUR |
FODM3022R2V-NF098 |
![]() |
Hersteller: onsemi
Description: 4-PIN MFP 400V RANDOM PHASE TRIA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: 4-PIN MFP 400V RANDOM PHASE TRIA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQD5N50CTM-WS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 500V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CHANNEL 500V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQP3N50C-F080 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 500V 1.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Description: MOSFET N-CH 500V 1.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSL336LRDN |
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 26V
Supplier Device Package: 7-DIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Control Features: EN, Soft Start
Power (Watts): 20 W
Description: IC OFFLINE SWITCH MULT TOP 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 26V
Supplier Device Package: 7-DIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Control Features: EN, Soft Start
Power (Watts): 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FUSB302B10MPX |
![]() |
Hersteller: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.18 EUR |
FUSB302B11MPX |
![]() |
Hersteller: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 37877 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.18 EUR |
FUSB302TMPX |
![]() |
Hersteller: onsemi
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB TYPE C 14MLP
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.85 EUR |
6000+ | 0.8 EUR |
GF001HN |
![]() |
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 8MDIP
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V
Current - Output (Max): 2.7A
Ratio - Input:Output: 2:1
Supplier Device Package: 8-DIP
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 2:1 8MDIP
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 25V
Current - Output (Max): 2.7A
Ratio - Input:Output: 2:1
Supplier Device Package: 8-DIP
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HCPL4503TSVM |
![]() |
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8DIP GW
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.32 EUR |
10+ | 3.89 EUR |
100+ | 3.05 EUR |
500+ | 2.68 EUR |
1000+ | 2.56 EUR |
HGTP7N60A4-F102 |
![]() |
Hersteller: onsemi
Description: IGBT 600V 34A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 150µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Description: IGBT 600V 34A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 150µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HUF75639P3-F102 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5 EUR |
10+ | 3.25 EUR |
100+ | 2.25 EUR |
500+ | 1.83 EUR |
MOC3071M |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
50+ | 0.8 EUR |
100+ | 0.72 EUR |
500+ | 0.59 EUR |
MOC3071SM |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
15+ | 1.19 EUR |
100+ | 0.88 EUR |
500+ | 0.75 EUR |
MOC3072M |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 5002 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.48 EUR |
17+ | 1.04 EUR |
100+ | 0.77 EUR |
500+ | 0.65 EUR |
1000+ | 0.61 EUR |
2000+ | 0.57 EUR |
5000+ | 0.54 EUR |
MOC3072SM |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.2 EUR |
12+ | 1.55 EUR |
100+ | 1.16 EUR |
500+ | 0.99 EUR |
RHRP15120-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 1200V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STANDARD 1200V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RHRP1560-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RHRP30120-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RHRP3060-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RHRP8120-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 1200V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STANDARD 1200V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RHRP860-F102 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 8A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS4465_SN00187 |
Hersteller: onsemi
Description: MOSFET P-CHANNEL 20V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDS8958B_G |
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGD4536TM_SN00306 |
Hersteller: onsemi
Description: IGBT TRENCH 360V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Gate Charge: 47 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 125 W
Description: IGBT TRENCH 360V TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Gate Charge: 47 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDC655BN_NBNN007 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBTH81_F080 |
Hersteller: onsemi
Description: RF TRANS PNP 20V 600MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Description: RF TRANS PNP 20V 600MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NC7SB3157L6X_F131 |
Hersteller: onsemi
Description: IC SWITCH SPDT 6MICROPAK
Description: IC SWITCH SPDT 6MICROPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6385_2N2907A |
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6585_2N4209 |
Hersteller: onsemi
Description: TRANS PNP 15V 0.05A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Frequency - Transition: 850MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
Description: TRANS PNP 15V 0.05A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Frequency - Transition: 850MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6685_2N3906 |
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6785_2N4033 |
Hersteller: onsemi
Description: TRANS PNP 80V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS PNP 80V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSB127AHN |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 70%
Internal Switch(s): Four Switches
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 70%
Internal Switch(s): Four Switches
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSBB30CH60CS |
Hersteller: onsemi
Description: SMART POWER MODULE
Packaging: Bulk
Package / Case: 27-DIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Description: SMART POWER MODULE
Packaging: Bulk
Package / Case: 27-DIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KA431AZTA_F081 |
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCA47N60F_SN00171 |
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SG6105Z |
Hersteller: onsemi
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY SUPERVISOR 20DIP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH