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LA6339L-E onsemi Description: HIGH-PERFORMANCE QUAD COMPARATOR
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NSBA143EDXV6T1 NSBA143EDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
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NSBC143TDXV6T1 NSBC143TDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
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NSBA143TDXV6T1 NSBA143TDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC143ZDXV6T1 NSBC143ZDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
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NSBA143ZDXV6T1 NSBA143ZDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC143EDXV6T1 NSBC143EDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC113EDXV6T1 NSBC113EDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBA113EDXV6T1 NSBA113EDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SOT-563
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NSBA114EDXV6T5G NSBA114EDXV6T5G onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 48000 Stücke:
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4537+0.13 EUR
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NSBA114EDXV6T5 NSBA114EDXV6T5 onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
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4537+0.13 EUR
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NSBA114YDXV6T1 NSBA114YDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 144000 Stücke:
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7212+0.081 EUR
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NSBA114TDXV6T5 NSBA114TDXV6T5 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 15999 Stücke:
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7212+0.081 EUR
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NSBA114TDXV6T1 NSBA114TDXV6T1 onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 48000 Stücke:
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7212+0.081 EUR
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NSBC114YDXV6T1 NSBC114YDXV6T1 onsemi NSBC114EDXV6Tx.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
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3030+0.18 EUR
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NSBC114TDXV6T5 NSBC114TDXV6T5 onsemi NSBC114EDXV6Tx.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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2SA2169-H-TL-E onsemi Description: IC REG LINEAR
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRF20H100CTG MBRF20H100CTG onsemi mbr20h100ct-d.pdf Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
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CAT24S128C4ATR CAT24S128C4ATR onsemi Description: IC EEPROM 128K I2C 1MHZ 4WLCSP
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 Mindestbestellmenge: 5000 Stücke
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CAT24S128C4ATR CAT24S128C4ATR onsemi Description: IC EEPROM 128K I2C 1MHZ 4WLCSP
auf Bestellung 4900 Stücke:
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13+1.65 EUR
14+1.51 EUR
25+1.5 EUR
50+1.49 EUR
100+1.33 EUR
250+1.32 EUR
500+1.3 EUR
1000+1.25 EUR
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SB29003TF onsemi Description: TRANS NPN 400V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 10303 Stücke:
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2049+0.29 EUR
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NCV891330PD50R2G NCV891330PD50R2G onsemi ncv891330-d.pdf Description: IC REG BUCK 5V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SOIC-EP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+4.78 EUR
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NCV891330PD50R2G NCV891330PD50R2G onsemi ncv891330-d.pdf Description: IC REG BUCK 5V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SOIC-EP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3729 Stücke:
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3+8.73 EUR
10+6.63 EUR
25+6.09 EUR
100+5.51 EUR
250+5.24 EUR
500+5.22 EUR
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FOD3182V FOD3182V onsemi fod3182-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
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4+6.56 EUR
50+4.02 EUR
100+3.76 EUR
500+3.31 EUR
1000+3.15 EUR
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RGP10J RGP10J onsemi RGP10M-D.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
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RGP10J RGP10J onsemi RGP10M-D.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11778 Stücke:
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28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 28 Stücke
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TL431IDMR2G TL431IDMR2G onsemi tl431-d.pdf Description: IC VREF SHUNT ADJ 2.2% MICRO8
Tolerance: ±2.2%
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 12000 Stücke:
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1122+0.55 EUR
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FQD3N50CTM FQD3N50CTM onsemi fqu3n50c-d.pdf Description: MOSFET N-CH 500V 2.5A DPAK
Produkt ist nicht verfügbar
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FQD3N50CTF FQD3N50CTF onsemi fqu3n50c-d.pdf Description: MOSFET N-CH 500V 2.5A DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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SMBD1013LT3 onsemi Description: SS SOT23 SHKY DIO SPEC TR
Packaging: Bulk
Part Status: Active
auf Bestellung 30000 Stücke:
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699+0.79 EUR
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MBD101G MBD101G onsemi mbd101-d.pdf Description: RF DIODE SCHOTTKY 7V 280MW TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: TO-92
Part Status: Obsolete
Power Dissipation (Max): 280 mW
auf Bestellung 20272 Stücke:
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3206+0.18 EUR
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MBRP745TU MBRP745TU onsemi MBRP745.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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SZMM3Z2V4T1G SZMM3Z2V4T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 2.4V 300MW SOD323
Tolerance: ±8%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SZMM3Z2V4T1G SZMM3Z2V4T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 2.4V 300MW SOD323
Tolerance: ±8%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 152 Stücke:
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48+0.44 EUR
76+0.27 EUR
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SZMM3Z33VT1G SZMM3Z33VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 33V 300MW SOD323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
Qualification: AEC-Q101
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SZMM3Z33VT1G SZMM3Z33VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 33V 300MW SOD323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
Qualification: AEC-Q101
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SZMM3Z22VT1G SZMM3Z22VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 22V 300MW SOD323
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SZMM3Z22VT1G SZMM3Z22VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 22V 300MW SOD323
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500+0.18 EUR
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SZMM3Z11VT1G SZMM3Z11VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 11V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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SZMM3Z11VT1G SZMM3Z11VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 11V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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SZMM3Z4V3ST1G SZMM3Z4V3ST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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SZMM3Z4V3ST1G SZMM3Z4V3ST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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SZMM3Z12VT1G SZMM3Z12VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 12V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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NSTB60BDW1T1 NSTB60BDW1T1 onsemi nstb60bdw1t1-d.pdf Description: TRANS NPN PREBIAS/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 250mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Frequency - Transition: 140MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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SN74LS10D SN74LS10D onsemi sn74ls10 Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 1.2 mA
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MCH3221-TL-E onsemi Description: BIP NPN 3A 30V
Packaging: Bulk
auf Bestellung 48000 Stücke:
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IRFP150A IRFP150A onsemi irfp150a-d.pdf Description: MOSFET N-CH 100V 43A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.5A, 10V
Power Dissipation (Max): 193W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
Produkt ist nicht verfügbar
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MMSZS5260BT1G onsemi Description: DIODE ZENER 500MW SOD123
Packaging: Bulk
auf Bestellung 30000 Stücke:
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1SMA5934BT3G 1SMA5934BT3G onsemi 1SMA5913BT3-D.PDF Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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1SMA5934BT3G 1SMA5934BT3G onsemi 1SMA5913BT3-D.PDF Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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50+0.44 EUR
100+0.39 EUR
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NTD15N06LG onsemi ONSMS12586-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NTD15N06AV1 onsemi Description: 15A, 60V, 0.09OHM, N-CHANNEL POW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NTD15N06LT4 NTD15N06LT4 onsemi ntd15n06l-d.pdf Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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2N6107 2N6107 onsemi 2n6107-d.pdf Description: TRANS PNP 70V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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TIP29B TIP29B onsemi TIP29%2C30%20A%2CB%2CC_Rev13.pdf Description: TRANS NPN 80V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMFS5A160PLZT1G NVMFS5A160PLZT1G onsemi nvmfs5a160plz-d.pdf Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5A160PLZT1G NVMFS5A160PLZT1G onsemi nvmfs5a160plz-d.pdf Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LE25S40AFDTWG LE25S40AFDTWG onsemi Description: IC FLASH 4MBIT SPI 40MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 1ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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564+1.02 EUR
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FPF2290BUCX-F130 FPF2290BUCX-F130 onsemi fpf2290-d.pdf Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Voltage - Load: 2.5V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WLCSP (1.29x1.83)
Fault Protection: Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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FPF2290BUCX-F130 FPF2290BUCX-F130 onsemi fpf2290-d.pdf Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Voltage - Load: 2.5V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WLCSP (1.29x1.83)
Fault Protection: Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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LA6339L-E
Hersteller: onsemi
Description: HIGH-PERFORMANCE QUAD COMPARATOR
Produkt ist nicht verfügbar
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NSBA143EDXV6T1 NSBA114EDXV6-D.pdf
NSBA143EDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC143TDXV6T1 NSBC114EDXV6Tx.pdf
NSBC143TDXV6T1
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBA143TDXV6T1 NSBA114EDXV6-D.pdf
NSBA143TDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBC143ZDXV6T1 NSBC114EDXV6Tx.pdf
NSBC143ZDXV6T1
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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NSBA143ZDXV6T1 NSBA114EDXV6-D.pdf
NSBA143ZDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC143EDXV6T1 NSBC114EDXV6Tx.pdf
NSBC143EDXV6T1
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EDXV6T1 NSBC114EDXV6Tx.pdf
NSBC113EDXV6T1
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBA113EDXV6T1 NSBA114EDXV6-D.pdf
NSBA113EDXV6T1
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBA114EDXV6T5G NSBA114EDXV6-D.pdf
NSBA114EDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4537+0.13 EUR
Mindestbestellmenge: 4537 Stücke
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NSBA114EDXV6T5 NSBA114EDXV6-D.pdf
NSBA114EDXV6T5
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4537+0.13 EUR
Mindestbestellmenge: 4537 Stücke
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NSBA114YDXV6T1 NSBA114EDXV6-D.pdf
NSBA114YDXV6T1
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7212+0.081 EUR
Mindestbestellmenge: 7212 Stücke
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NSBA114TDXV6T5 NSBA114EDXV6-D.pdf
NSBA114TDXV6T5
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 15999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7212+0.081 EUR
Mindestbestellmenge: 7212 Stücke
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NSBA114TDXV6T1 NSBA114EDXV6-D.pdf
NSBA114TDXV6T1
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7212+0.081 EUR
Mindestbestellmenge: 7212 Stücke
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NSBC114YDXV6T1 NSBC114EDXV6Tx.pdf
NSBC114YDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 23960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3030+0.18 EUR
Mindestbestellmenge: 3030 Stücke
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NSBC114TDXV6T5 NSBC114EDXV6Tx.pdf
NSBC114TDXV6T5
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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2SA2169-H-TL-E
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRF20H100CTG mbr20h100ct-d.pdf
MBRF20H100CTG
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24S128C4ATR
CAT24S128C4ATR
Hersteller: onsemi
Description: IC EEPROM 128K I2C 1MHZ 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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CAT24S128C4ATR
CAT24S128C4ATR
Hersteller: onsemi
Description: IC EEPROM 128K I2C 1MHZ 4WLCSP
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
14+1.51 EUR
25+1.5 EUR
50+1.49 EUR
100+1.33 EUR
250+1.32 EUR
500+1.3 EUR
1000+1.25 EUR
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SB29003TF
Hersteller: onsemi
Description: TRANS NPN 400V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 10303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2049+0.29 EUR
Mindestbestellmenge: 2049 Stücke
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NCV891330PD50R2G ncv891330-d.pdf
NCV891330PD50R2G
Hersteller: onsemi
Description: IC REG BUCK 5V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SOIC-EP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.78 EUR
Mindestbestellmenge: 2500 Stücke
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NCV891330PD50R2G ncv891330-d.pdf
NCV891330PD50R2G
Hersteller: onsemi
Description: IC REG BUCK 5V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SOIC-EP
Synchronous Rectifier: No
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3729 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.73 EUR
10+6.63 EUR
25+6.09 EUR
100+5.51 EUR
250+5.24 EUR
500+5.22 EUR
Mindestbestellmenge: 3 Stücke
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FOD3182V fod3182-d.pdf
FOD3182V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.56 EUR
50+4.02 EUR
100+3.76 EUR
500+3.31 EUR
1000+3.15 EUR
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RGP10J RGP10M-D.pdf
RGP10J
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.14 EUR
Mindestbestellmenge: 5000 Stücke
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RGP10J RGP10M-D.pdf
RGP10J
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11778 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 28 Stücke
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TL431IDMR2G tl431-d.pdf
TL431IDMR2G
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2.2% MICRO8
Tolerance: ±2.2%
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1122+0.55 EUR
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FQD3N50CTM fqu3n50c-d.pdf
FQD3N50CTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Produkt ist nicht verfügbar
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FQD3N50CTF fqu3n50c-d.pdf
FQD3N50CTF
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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SMBD1013LT3
Hersteller: onsemi
Description: SS SOT23 SHKY DIO SPEC TR
Packaging: Bulk
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
699+0.79 EUR
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MBD101G mbd101-d.pdf
MBD101G
Hersteller: onsemi
Description: RF DIODE SCHOTTKY 7V 280MW TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: TO-92
Part Status: Obsolete
Power Dissipation (Max): 280 mW
auf Bestellung 20272 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3206+0.18 EUR
Mindestbestellmenge: 3206 Stücke
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MBRP745TU MBRP745.pdf
MBRP745TU
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 7.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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SZMM3Z2V4T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z2V4T1G
Hersteller: onsemi
Description: DIODE ZENER 2.4V 300MW SOD323
Tolerance: ±8%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SZMM3Z2V4T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z2V4T1G
Hersteller: onsemi
Description: DIODE ZENER 2.4V 300MW SOD323
Tolerance: ±8%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
76+0.27 EUR
Mindestbestellmenge: 48 Stücke
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SZMM3Z33VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z33VT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 300MW SOD323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
Qualification: AEC-Q101
auf Bestellung 5931 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.095 EUR
Mindestbestellmenge: 3000 Stücke
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SZMM3Z33VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z33VT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 300MW SOD323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
Qualification: AEC-Q101
auf Bestellung 5931 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
87+0.24 EUR
128+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
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SZMM3Z22VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z22VT1G
Hersteller: onsemi
Description: DIODE ZENER 22V 300MW SOD323
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.094 EUR
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SZMM3Z22VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z22VT1G
Hersteller: onsemi
Description: DIODE ZENER 22V 300MW SOD323
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
42+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
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SZMM3Z11VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z11VT1G
Hersteller: onsemi
Description: DIODE ZENER 11V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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SZMM3Z11VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z11VT1G
Hersteller: onsemi
Description: DIODE ZENER 11V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 5840 Stücke:
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34+0.63 EUR
54+0.39 EUR
113+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
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SZMM3Z4V3ST1G mm3z2v4st1-d.pdf
SZMM3Z4V3ST1G
Hersteller: onsemi
Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
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SZMM3Z4V3ST1G mm3z2v4st1-d.pdf
SZMM3Z4V3ST1G
Hersteller: onsemi
Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 8880 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
40+0.54 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.17 EUR
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SZMM3Z12VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z12VT1G
Hersteller: onsemi
Description: DIODE ZENER 12V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.1 EUR
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NSTB60BDW1T1 nstb60bdw1t1-d.pdf
NSTB60BDW1T1
Hersteller: onsemi
Description: TRANS NPN PREBIAS/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 250mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Frequency - Transition: 140MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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SN74LS10D sn74ls10
SN74LS10D
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 1.2 mA
auf Bestellung 86546 Stücke:
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393+1.36 EUR
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MCH3221-TL-E
Hersteller: onsemi
Description: BIP NPN 3A 30V
Packaging: Bulk
auf Bestellung 48000 Stücke:
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1397+0.43 EUR
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IRFP150A irfp150a-d.pdf
IRFP150A
Hersteller: onsemi
Description: MOSFET N-CH 100V 43A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.5A, 10V
Power Dissipation (Max): 193W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
Produkt ist nicht verfügbar
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MMSZS5260BT1G
Hersteller: onsemi
Description: DIODE ZENER 500MW SOD123
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7869+0.071 EUR
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1SMA5934BT3G 1SMA5913BT3-D.PDF
1SMA5934BT3G
Hersteller: onsemi
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
auf Bestellung 55000 Stücke:
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5000+0.2 EUR
10000+0.19 EUR
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1SMA5934BT3G 1SMA5913BT3-D.PDF
1SMA5934BT3G
Hersteller: onsemi
Description: DIODE ZENER 24V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
auf Bestellung 58381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
35+0.62 EUR
50+0.44 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 21 Stücke
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NTD15N06LG ONSMS12586-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NTD15N06AV1
Hersteller: onsemi
Description: 15A, 60V, 0.09OHM, N-CHANNEL POW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NTD15N06LT4 ntd15n06l-d.pdf
NTD15N06LT4
Hersteller: onsemi
Description: MOSFET N-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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2N6107 2n6107-d.pdf
2N6107
Hersteller: onsemi
Description: TRANS PNP 70V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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TIP29B TIP29%2C30%20A%2CB%2CC_Rev13.pdf
TIP29B
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NVMFS5A160PLZT1G nvmfs5a160plz-d.pdf
NVMFS5A160PLZT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5A160PLZT1G nvmfs5a160plz-d.pdf
NVMFS5A160PLZT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LE25S40AFDTWG
LE25S40AFDTWG
Hersteller: onsemi
Description: IC FLASH 4MBIT SPI 40MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 40 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 1ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
564+1.02 EUR
Mindestbestellmenge: 564 Stücke
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FPF2290BUCX-F130 fpf2290-d.pdf
FPF2290BUCX-F130
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Voltage - Load: 2.5V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WLCSP (1.29x1.83)
Fault Protection: Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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FPF2290BUCX-F130 fpf2290-d.pdf
FPF2290BUCX-F130
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Voltage - Load: 2.5V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WLCSP (1.29x1.83)
Fault Protection: Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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