| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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KST10MTF | onsemi |
Description: RF TRANS NPN 25V 650MHZ SOT-23-3Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-23-3 Frequency - Transition: 650MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Voltage - Collector Emitter Breakdown (Max): 25V Power - Max: 350mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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KST10MTF | onsemi |
Description: RF TRANS NPN 25V 650MHZ SOT-23-3Supplier Device Package: SOT-23-3 Frequency - Transition: 650MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Voltage - Collector Emitter Breakdown (Max): 25V Power - Max: 350mW Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 10601 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVTSA4100ET3G-GA01 | onsemi |
Description: DIODE SCHOTTKY 100V 4A SMACurrent - Reverse Leakage @ Vr: 25 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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MMSZ5237B | onsemi |
Description: ZENER DIODE, 8.2V, 5%, 0.5W, UNI |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5237BT1 | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD-123 |
auf Bestellung 23984 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5237B | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMSZ5237B | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDN5630-B8 | onsemi |
Description: FET 60V 1.0 MOHM SSOT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
Produkt ist nicht verfügbar |
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STK621-728-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 21SIP Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 10A Current - Peak Output: 20A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 21-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STK621-068F-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-033C-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-033D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Bulk Part Status: Obsolete |
auf Bestellung 6130 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK621-051F-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-043D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-014-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK621-728SG-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-742-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-712-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-729-E | onsemi | Description: IC MOTOR DRIVER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-051D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-713-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-141A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-043C-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-068S-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-521-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-520A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STK621-068R-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBRF30H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V TO220 FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 FULLPACK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NVLJWS022N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMJD012N06CLTWG | onsemi |
Description: MOSFET 2N-CH 60V 11.5A 8LFPAKPart Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W (Ta), 42W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 2SC4080D-TD-E | onsemi |
Description: 2SC4080 - NPN EPITAXIAL PLANAR S |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86252 | onsemi |
Description: MOSFET N-CH 150V 4.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V |
Produkt ist nicht verfügbar |
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FDS86252 | onsemi |
Description: MOSFET N-CH 150V 4.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V |
auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD2110TT1G | onsemi |
Description: MOSFET P-CH 12V 4.5A CHIPFETInput Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FDA16N50-F109 | onsemi |
Description: MOSFET N-CH 500V 16.5A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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SZBZX84B10LT1G | onsemi |
Description: DIODE ZENER 10V 250MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZBZX84B10LT1G | onsemi |
Description: DIODE ZENER 10V 250MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
auf Bestellung 92914 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12711ADNR2G | onsemi |
Description: 4-45 V INPUT CURRENT MODE ISOLATPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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NCP12711ADNR2G | onsemi |
Description: 4-45 V INPUT CURRENT MODE ISOLATPackaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 |
auf Bestellung 3558 Stücke: Lieferzeit 10-14 Tag (e) |
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| SBRS8190T3 | onsemi | Description: DIODE SCHOTTKY 90V 1A SMB |
Produkt ist nicht verfügbar |
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SBRS8190T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 90V 2A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 90 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CS8191XDWFR20 | onsemi |
Description: IC TRANSCEIVER 1/0 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 105°C Voltage - Supply: 8.5V ~ 15V Number of Drivers/Receivers: 1/0 Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
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| SJ6522AG | onsemi |
Description: BIP T03 PNP SPECIAL Packaging: Bulk Part Status: Active |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP7P06 | onsemi |
Description: MOSFET P-CH 60V 7A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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BD17510STU | onsemi |
Description: TRANS NPN 45V 3A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 30 W |
auf Bestellung 1830 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100EL07DR2G | onsemi |
Description: IC GATE XOR/XNOR ECL 2INP 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100EL07DR2G | onsemi |
Description: IC GATE XOR/XNOR ECL 2INP 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 |
auf Bestellung 9999 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33063AVPG | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
auf Bestellung 9941 Stücke: Lieferzeit 10-14 Tag (e) |
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7WB3305CMX1TCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8ULLGA |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF5071 | onsemi |
Description: SMART POWER STAGE (SPS) MODULESCurrent: 90 A Configuration: 1 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FDMF5071 | onsemi |
Description: SMART POWER STAGE (SPS) MODULESCurrent: 90 A Configuration: 1 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVFQFN Packaging: Cut Tape (CT) |
auf Bestellung 2807 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2B | onsemi |
Description: DIODE STANDARD 100V 2A DO214AAPart Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2B | onsemi |
Description: DIODE STANDARD 100V 2A DO214AACurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
auf Bestellung 2737 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2170N3 | onsemi |
Description: MOSFET N-CH 200V 3A 8SOICPackage / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
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FDS2170N3 | onsemi |
Description: MOSFET N-CH 200V 3A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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SZCM1213A-02SR | onsemi |
Description: TVS DIODE 3.3VWM 10VC SOT143Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-143 Voltage - Reverse Standoff (Typ): 3.3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SZCM1213A-02SR | onsemi |
Description: TVS DIODE 3.3VWM 10VC SOT143Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-143 Voltage - Reverse Standoff (Typ): 3.3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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NVMFWS027N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 38µA Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS4C308NWFT1G | onsemi |
Description: TRENCH 30V NCHInput Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFS5C404NWFET1G | onsemi |
Description: T6-40V N 0.7 MOHMS SLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| KST10MTF |
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Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-3
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 350mW
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-3
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 350mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.068 EUR |
| 6000+ | 0.06 EUR |
| KST10MTF |
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Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Supplier Device Package: SOT-23-3
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 350mW
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Supplier Device Package: SOT-23-3
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 350mW
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10601 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 223+ | 0.079 EUR |
| 256+ | 0.069 EUR |
| 307+ | 0.057 EUR |
| 340+ | 0.052 EUR |
| 500+ | 0.049 EUR |
| 1000+ | 0.046 EUR |
| NRVTSA4100ET3G-GA01 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 100V 4A SMA
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237B |
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Hersteller: onsemi
Description: ZENER DIODE, 8.2V, 5%, 0.5W, UNI
Description: ZENER DIODE, 8.2V, 5%, 0.5W, UNI
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.032 EUR |
| MMSZ5237BT1 |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD-123
Description: DIODE ZENER 8.2V 500MW SOD-123
auf Bestellung 23984 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.032 EUR |
| MMSZ5237B |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5237B |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN5630-B8 |
Hersteller: onsemi
Description: FET 60V 1.0 MOHM SSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: FET 60V 1.0 MOHM SSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STK621-728-E |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 10A 21SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 21-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 10A 21SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 21-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STK621-033D-E |
auf Bestellung 6130 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 26.55 EUR |
| STK621-014-E |
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 40.67 EUR |
| STK621-729-E |
Hersteller: onsemi
Description: IC MOTOR DRIVER
Description: IC MOTOR DRIVER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRF30H100CTH |
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVLJWS022N06CLTAG |
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Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.41 EUR |
| NVMJD012N06CLTWG |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC4080D-TD-E |
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Hersteller: onsemi
Description: 2SC4080 - NPN EPITAXIAL PLANAR S
Description: 2SC4080 - NPN EPITAXIAL PLANAR S
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1312+ | 0.37 EUR |
| FDS86252 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS86252 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 11+ | 1.73 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.91 EUR |
| NTHD2110TT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 12V 4.5A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 4.5A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDA16N50-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.25 EUR |
| 30+ | 3.44 EUR |
| 120+ | 2.83 EUR |
| SZBZX84B10LT1G |
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Hersteller: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.03 EUR |
| 6000+ | 0.029 EUR |
| SZBZX84B10LT1G |
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Hersteller: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
auf Bestellung 92914 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.19 EUR |
| 134+ | 0.13 EUR |
| 269+ | 0.065 EUR |
| 500+ | 0.064 EUR |
| 1000+ | 0.06 EUR |
| NCP12711ADNR2G |
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Hersteller: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP12711ADNR2G |
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Hersteller: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 3558 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 10+ | 1.77 EUR |
| 25+ | 1.61 EUR |
| 100+ | 1.43 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.28 EUR |
| SBRS8190T3 |
Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8190T3G-VF01 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CS8191XDWFR20 |
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Hersteller: onsemi
Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJ6522AG |
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 4.74 EUR |
| FQP7P06 |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 60V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD17510STU |
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Hersteller: onsemi
Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
auf Bestellung 1830 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.59 EUR |
| MC100EL07DR2G |
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Hersteller: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 5.06 EUR |
| MC100EL07DR2G |
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Hersteller: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
auf Bestellung 9999 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.65 EUR |
| 10+ | 7.95 EUR |
| 25+ | 7.02 EUR |
| 100+ | 5.99 EUR |
| 250+ | 5.5 EUR |
| 500+ | 5.2 EUR |
| 1000+ | 5.06 EUR |
| MC33063AVPG |
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Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
auf Bestellung 9941 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 17+ | 1.07 EUR |
| 50+ | 0.9 EUR |
| 100+ | 0.85 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.74 EUR |
| 2500+ | 0.71 EUR |
| 5000+ | 0.69 EUR |
| 7WB3305CMX1TCG |
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Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1603+ | 0.31 EUR |
| FDMF5071 |
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Hersteller: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Tape & Reel (TR)
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMF5071 |
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Hersteller: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Cut Tape (CT)
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Cut Tape (CT)
auf Bestellung 2807 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.06 EUR |
| 10+ | 5.35 EUR |
| 100+ | 3.81 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.94 EUR |
| ES2B |
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Hersteller: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE STANDARD 100V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| ES2B |
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Hersteller: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 2737 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 49+ | 0.36 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| FDS2170N3 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 3A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDS2170N3 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZCM1213A-02SR |
![]() |
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZCM1213A-02SR |
![]() |
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS027N10MCLT1G |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.54 EUR |
| 3000+ | 0.53 EUR |
| 4500+ | 0.52 EUR |
| NVMFS4C308NWFT1G |
![]() |
Hersteller: onsemi
Description: TRENCH 30V NCH
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRENCH 30V NCH
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C404NWFET1G |
![]() |
Hersteller: onsemi
Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 3.9 EUR |
























