| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NTTFS015P03P8ZTAG | onsemi |
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 1210 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS015P03P8ZTAG | onsemi |
Description: PT8P PORTFOLIO EXPANSIONPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVTFS015P03P8ZTAG | onsemi |
Description: PT8P PORTFOLIO EXPANSIONQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TIP111TU | onsemi |
Description: TRANS NPN DARL 80V 2A TO-220-3Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBF4392 | onsemi |
Description: JFET N-CH 30V SOT23-3Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Resistance - RDS(On): 60 Ohms Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23-3 Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SZ1SMB5941BT3 | onsemi | Description: DIODE ZENER 47V 3W SMB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1SMB5941BT3 | onsemi |
Description: DIODE ZENER 47V 3W SMB |
auf Bestellung 26188 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8160AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 250MA 4XDFNProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.175V @ 250mA PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 23 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 250mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV8160AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 250MA 4XDFNProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.175V @ 250mA PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 23 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 250mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP114AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 300MA 4-UDFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP114AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 300MA 4-UDFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 26820 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV20092DMR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 8.5 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-MSOP Voltage - Input Offset: 500 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 350 kHz Slew Rate: 0.17V/µs Current - Supply: 23µA (x2 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV20092DMR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8MSOPVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 8.5 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-MSOP Voltage - Input Offset: 500 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 350 kHz Slew Rate: 0.17V/µs Current - Supply: 23µA (x2 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV68261MTWAITBG | onsemi |
Description: IDEAL DIODE AND HS SWITCH NMOS DPackaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV68261MTWAITBG | onsemi |
Description: IDEAL DIODE AND HS SWITCH NMOS DPackaging: Cut Tape (CT) Features: Load Discharge Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2297 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86181 | onsemi |
Description: MOSFET N-CH 100V 44A/124A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS86181 | onsemi |
Description: MOSFET N-CH 100V 44A/124A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD1D1N02X | onsemi |
Description: MOSFET 2N-CH 25V 14A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP5010FCT1G | onsemi |
Description: IC LED DRV RGLT ANALOG 8FLIPCHIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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LM4041BSD-122GT3 | onsemi |
Description: VOLTAGE REFERENCES, PRECISION MIPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002V | onsemi |
Description: MOSFET 2N-CH 60V 0.28A SOT563FPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002V | onsemi |
Description: MOSFET 2N-CH 60V 0.28A SOT563FPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT863MTBI-GT3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3DigiKey Programmable: Not Verified Supplier Device Package: SOT-23-3 Voltage - Threshold: 4.38V Reset Timeout: 140ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT863TTBI-GT3 | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT23-3 |
auf Bestellung 12468 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC5305DTU | onsemi |
Description: TRANS NPN 400V 5A TO220-3Packaging: Tube Supplier Device Package: TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 5 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MTD3055V | onsemi |
Description: MOSFET N-CH 60V 12A TO252-3Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N3820 | onsemi |
Description: JFET P-CH 20V TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V Voltage - Breakdown (V(BR)GSS): 20 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP3100GBRLG | onsemi |
Description: THYRISTOR 275V 80A DO-204ACPackaging: Tape & Reel (TR) Capacitance: 60pF Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Number of Elements: 1 Voltage - Breakover: 350V Voltage - Off State: 275V Voltage - On State: 4 V Supplier Device Package: Axial Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 80 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVS50031SB3T1G | onsemi |
Description: TRANS NPN 50V 3A 3-CPHQualification: AEC-Q101 Grade: Automotive Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: 3-CPH Frequency - Transition: 380MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Operating Temperature: 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVS50031SB3T1G | onsemi |
Description: TRANS NPN 50V 3A 3-CPHQualification: AEC-Q101 Grade: Automotive Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: 3-CPH Frequency - Transition: 380MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Operating Temperature: 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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CPH6121-TL-E | onsemi |
Description: TRANS PNP 12V 3A 6CPH Package / Case: SC-74, SOT-457 Packaging: Bulk Power - Max: 1.3 W Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 6-CPH Frequency - Transition: 380MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDLL400 | onsemi |
Description: DIODE GEN PURP 150V 200MA SOD80Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDLL400 | onsemi |
Description: DIODE GEN PURP 150V 200MA SOD80Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Cut Tape (CT) |
auf Bestellung 7484 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2113LT3 | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMUN2113LT1 | onsemi |
Description: TRANS BRT PNP 100MA 50V SOT23Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NC7S02M5X-L22090 | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT23-5 |
auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2112T3 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUN2112T1 | onsemi |
Description: TRANS BRT PNP 100MA 50V SC-59Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 230 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN2112T1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC59Qualification: AEC-Q101 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 230 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 174000 Stücke: Lieferzeit 10-14 Tag (e) |
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CPH5541-TL-E | onsemi |
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CPH5541-TL-E | onsemi |
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CPH6001A-TL-E | onsemi |
Description: RF TRANS NPN 12V 6.7GHZ 6-CPHTransistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: 6-CPH Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Frequency - Transition: 6.7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 11dB Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CPH6001A-TL-E | onsemi |
Description: RF TRANS NPN 12V 6.7GHZ 6-CPHSupplier Device Package: 6-CPH Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Frequency - Transition: 6.7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 11dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 1189 Stücke: Lieferzeit 10-14 Tag (e) |
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| LV5893M-TE-L-E | onsemi | Description: STEP DOWN SWITCHING REGULATOR |
auf Bestellung 226000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400CBHAA0DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICVoltage - Start Up: 12 V Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Supplier Device Package: 7-SOIC Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 80% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400CBHAA0DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICVoltage - Start Up: 12 V Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Supplier Device Package: 7-SOIC Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 80% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Cut Tape (CT) |
auf Bestellung 37072 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400BBBBB2DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400BBBBB2DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
auf Bestellung 4916 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400BBBBA0DR2G | onsemi |
Description: IC OFFLINE SWITCHPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Supplier Device Package: 7-SOIC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP12400BBBBA0DR2G | onsemi |
Description: IC OFFLINE SWITCHPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Supplier Device Package: 7-SOIC |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV70627DQ002AR2G | onsemi |
Description: IC MTR DRV MICROSTEP 36SSOPPackaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Serial Operating Temperature: -40°C ~ 160°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 5.5V ~ 29V Technology: Power MOSFET Voltage - Load: 5.5V ~ 29V Supplier Device Package: 36-SSOP-EP Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC846CLT1G | onsemi |
Description: TRANS NPN 65V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 225 mW |
auf Bestellung 27679 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTS002N10MCTXG | onsemi |
Description: PTNG 100V, SINGLE NCH, PQFN8X8 SInput Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 520µA Power Dissipation (Max): 9W (Ta), 255W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMT061N60S5F | onsemi |
Description: SUPERFET5 FRFET, 61MOHM, PQFN88Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 4.6mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V |
auf Bestellung 1622 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3V1102CMTTBG | onsemi |
Description: IC CLK BUFFER 1:2 250MHZ 8WDFNFrequency - Max: 250 MHz Part Status: Active Supplier Device Package: 8-WDFN (2x2) Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 1.71V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Input: LVCMOS Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 8-WFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3V1102CMTTBG | onsemi |
Description: IC CLK BUFFER 1:2 250MHZ 8WDFNFrequency - Max: 250 MHz Part Status: Active Supplier Device Package: 8-WDFN (2x2) Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 1.71V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Input: LVCMOS Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 8-WFDFN Packaging: Cut Tape (CT) |
auf Bestellung 5984 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3V1104CMTTBG | onsemi |
Description: IC CLK BUFFER 1:4 250MHZ 8WDFNFrequency - Max: 250 MHz Supplier Device Package: 8-WDFN (2x2) Differential - Input:Output: No/No Ratio - Input:Output: 1:4 Voltage - Supply: 1.71V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Input: LVCMOS Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 8-WFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3V1104CMTTBG | onsemi |
Description: IC CLK BUFFER 1:4 250MHZ 8WDFNFrequency - Max: 250 MHz Supplier Device Package: 8-WDFN (2x2) Differential - Input:Output: No/No Ratio - Input:Output: 1:4 Voltage - Supply: 1.71V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Input: LVCMOS Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 8-WFDFN Packaging: Cut Tape (CT) |
auf Bestellung 5371 Stücke: Lieferzeit 10-14 Tag (e) |
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FFPF20UA60DNT | onsemi |
Description: DIODE ARR AVAL 600V 10A TO220FCurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-3 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FGA40T65SHDF | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Switching Energy: 1.22mJ (on), 440µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 68 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS015P03P8ZTAG |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| NVTFWS015P03P8ZTAG |
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Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS015P03P8ZTAG |
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Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: PT8P PORTFOLIO EXPANSION
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP111TU |
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Hersteller: onsemi
Description: TRANS NPN DARL 80V 2A TO-220-3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 80V 2A TO-220-3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBF4392 |
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Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET N-CH 30V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5941BT3 |
Hersteller: onsemi
Description: DIODE ZENER 47V 3W SMB
Description: DIODE ZENER 47V 3W SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5941BT3 |
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Hersteller: onsemi
Description: DIODE ZENER 47V 3W SMB
Description: DIODE ZENER 47V 3W SMB
auf Bestellung 26188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1312+ | 0.44 EUR |
| NCV8160AMX250TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.175V @ 250mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.175V @ 250mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV8160AMX250TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.175V @ 250mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.175V @ 250mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 24+ | 0.88 EUR |
| 26+ | 0.82 EUR |
| 100+ | 0.65 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.4 EUR |
| NCP114AMX250TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.11 EUR |
| 15000+ | 0.1 EUR |
| 21000+ | 0.1 EUR |
| NCP114AMX250TBG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 26820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 108+ | 0.19 EUR |
| 123+ | 0.17 EUR |
| 144+ | 0.14 EUR |
| 250+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| NCV20092DMR2G |
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Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 8.5 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.17V/µs
Current - Supply: 23µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 8.5 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.17V/µs
Current - Supply: 23µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.63 EUR |
| NCV20092DMR2G |
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Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 8.5 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.17V/µs
Current - Supply: 23µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 8.5 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 350 kHz
Slew Rate: 0.17V/µs
Current - Supply: 23µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 15+ | 1.43 EUR |
| 25+ | 1.33 EUR |
| 100+ | 1.09 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.69 EUR |
| NCV68261MTWAITBG |
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Hersteller: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV68261MTWAITBG |
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Hersteller: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 21+ | 1.04 EUR |
| 25+ | 0.93 EUR |
| 100+ | 0.82 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.7 EUR |
| FDMS86181 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86181 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.91 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.15 EUR |
| NTMFD1D1N02X |
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Hersteller: onsemi
Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.23 EUR |
| NCP5010FCT1G |
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Hersteller: onsemi
Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002V |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002V |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| CAT863MTBI-GT3 |
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Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.38V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
DigiKey Programmable: Not Verified
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.38V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 761+ | 0.74 EUR |
| CAT863TTBI-GT3 |
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Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
auf Bestellung 12468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 825+ | 0.69 EUR |
| KSC5305DTU |
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Hersteller: onsemi
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 5 A
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 5 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTD3055V |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Description: MOSFET N-CH 60V 12A TO252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| 2N3820 |
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Hersteller: onsemi
Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NP3100GBRLG |
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Hersteller: onsemi
Description: THYRISTOR 275V 80A DO-204AC
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: Axial
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Description: THYRISTOR 275V 80A DO-204AC
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: Axial
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NSVS50031SB3T1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 3A 3-CPH
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVS50031SB3T1G |
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Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 3A 3-CPH
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.3 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| CPH6121-TL-E |
Hersteller: onsemi
Description: TRANS PNP 12V 3A 6CPH
Package / Case: SC-74, SOT-457
Packaging: Bulk
Power - Max: 1.3 W
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 6-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Description: TRANS PNP 12V 3A 6CPH
Package / Case: SC-74, SOT-457
Packaging: Bulk
Power - Max: 1.3 W
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 6-CPH
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2219+ | 0.27 EUR |
| FDLL400 |
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Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 200MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.12 EUR |
| 5000+ | 0.11 EUR |
| FDLL400 |
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Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 150V 200MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
auf Bestellung 7484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.45 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| MMUN2113LT3 |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 40000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NC7S02M5X-L22090 |
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Hersteller: onsemi
Description: IC GATE NOR 1CH 2-INP SOT23-5
Description: IC GATE NOR 1CH 2-INP SOT23-5
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| MUN2112T3 |
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Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN2112T1 |
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Hersteller: onsemi
Description: TRANS BRT PNP 100MA 50V SC-59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS BRT PNP 100MA 50V SC-59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5323+ | 0.12 EUR |
| NSVMUN2112T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.06 EUR |
| CPH5541-TL-E |
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Hersteller: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.31 EUR |
| CPH5541-TL-E |
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Hersteller: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 29+ | 0.75 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.33 EUR |
| CPH6001A-TL-E |
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Hersteller: onsemi
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-CPH
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Frequency - Transition: 6.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11dB
Operating Temperature: 150°C (TJ)
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-CPH
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Frequency - Transition: 6.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11dB
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CPH6001A-TL-E |
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Hersteller: onsemi
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Supplier Device Package: 6-CPH
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Frequency - Transition: 6.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Supplier Device Package: 6-CPH
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Frequency - Transition: 6.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 27+ | 0.79 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| LV5893M-TE-L-E |
Hersteller: onsemi
Description: STEP DOWN SWITCHING REGULATOR
Description: STEP DOWN SWITCHING REGULATOR
auf Bestellung 226000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1519+ | 0.38 EUR |
| NCP12400CBHAA0DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Voltage - Start Up: 12 V
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Voltage - Start Up: 12 V
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.73 EUR |
| 7500+ | 0.71 EUR |
| 12500+ | 0.7 EUR |
| 25000+ | 0.69 EUR |
| NCP12400CBHAA0DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Voltage - Start Up: 12 V
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Voltage - Start Up: 12 V
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Cut Tape (CT)
auf Bestellung 37072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 19+ | 1.14 EUR |
| 25+ | 1.02 EUR |
| 100+ | 0.9 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.77 EUR |
| NCP12400BBBBB2DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.73 EUR |
| NCP12400BBBBB2DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 4916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 19+ | 1.12 EUR |
| 25+ | 1.01 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.76 EUR |
| NCP12400BBBBA0DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| NCP12400BBBBA0DR2G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
Description: IC OFFLINE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 12+ | 1.84 EUR |
| 25+ | 1.55 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| NCV70627DQ002AR2G |
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Hersteller: onsemi
Description: IC MTR DRV MICROSTEP 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Serial
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5.5V ~ 29V
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 29V
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Grade: Automotive
Description: IC MTR DRV MICROSTEP 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Serial
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5.5V ~ 29V
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 29V
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC846CLT1G |
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Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
auf Bestellung 27679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 136+ | 0.15 EUR |
| 222+ | 0.094 EUR |
| 500+ | 0.068 EUR |
| 1000+ | 0.06 EUR |
| NTMTS002N10MCTXG |
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Hersteller: onsemi
Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.9 EUR |
| NTMT061N60S5F |
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Hersteller: onsemi
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
auf Bestellung 1622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.93 EUR |
| 10+ | 13.01 EUR |
| 100+ | 9.91 EUR |
| NB3V1102CMTTBG |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Frequency - Max: 250 MHz
Part Status: Active
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Frequency - Max: 250 MHz
Part Status: Active
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.77 EUR |
| NB3V1102CMTTBG |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Frequency - Max: 250 MHz
Part Status: Active
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Frequency - Max: 250 MHz
Part Status: Active
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.52 EUR |
| 10+ | 10.34 EUR |
| 25+ | 9.77 EUR |
| 100+ | 8.47 EUR |
| 250+ | 8.03 EUR |
| 500+ | 7.21 EUR |
| 1000+ | 6.08 EUR |
| NB3V1104CMTTBG |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Frequency - Max: 250 MHz
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Frequency - Max: 250 MHz
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 4.18 EUR |
| NB3V1104CMTTBG |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Frequency - Max: 250 MHz
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Frequency - Max: 250 MHz
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Voltage - Supply: 1.71V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Input: LVCMOS
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.69 EUR |
| 10+ | 5.82 EUR |
| 25+ | 5.36 EUR |
| 100+ | 4.84 EUR |
| 250+ | 4.59 EUR |
| 500+ | 4.45 EUR |
| 1000+ | 4.33 EUR |
| FFPF20UA60DNT |
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Hersteller: onsemi
Description: DIODE ARR AVAL 600V 10A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR AVAL 600V 10A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGA40T65SHDF |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.85 EUR |
| 10+ | 5.87 EUR |





































