| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BAT43W_R1_00001 | PanJit |
 Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
auf Bestellung 287 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846BS_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT363 Mounting: SMD Current gain: 200...450 Kind of package: reel; tape Power dissipation: 0.25W |
auf Bestellung 1595 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TS_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 1µA |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TW_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: fast switching Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA |
auf Bestellung 2774 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40W_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BPN_R1_00001 | PanJit |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BS_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3573 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-40_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
auf Bestellung 4772 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.68A Gate charge: 1.8nC |
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KBJ2010_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A Electrical mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.05V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Load current: 20A Kind of package: tube Case: KBJ2 Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
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MMBTA44_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Current gain: 50...200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56-AU_R1_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2195 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
auf Bestellung 8898 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56W_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ33A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
auf Bestellung 836 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU810_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 220A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated Max. forward voltage: 1.05V |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ5.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT42W_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT42WS_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 0.5µA |
auf Bestellung 1601 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS316_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 4A Max. load current: 0.5A Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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BAV21W-AU_R1_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Application: automotive industry Leakage current: 0.2mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAV21W_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 0.2mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAV21WS-AU_R1_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD323F Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Application: automotive industry Leakage current: 0.1µA |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ30A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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GBJ2510_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54WS_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 0.6V Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LL4148_R1_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
auf Bestellung 15840 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148_R2_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
auf Bestellung 44118 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4148W_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
auf Bestellung 2346 Stücke: Lieferzeit 14-21 Tag (e) |
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GS1M_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4148WS_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54S_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.6V Max. load current: 0.3A Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.225W Features of semiconductor devices: fast switching Leakage current: 2µA |
auf Bestellung 6599 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV103_R1_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 75ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 0.1µA |
auf Bestellung 8347 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ES1J_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GS1M_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS16TS-AU_R1_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Leakage current: 1µA |
auf Bestellung 28227 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC856BW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
auf Bestellung 11830 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-25W_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-25W_R2_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS16_R2_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 0.7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4SMAJ5.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
auf Bestellung 7310 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC817-25W-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N5408G_R2_00001 | PanJit |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: DO201AD |
auf Bestellung 3848 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC846BW_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT323 Mounting: SMD Frequency: 100MHz Current gain: 200...450 Kind of package: reel; tape Power dissipation: 0.25W |
auf Bestellung 11745 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC857CS_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT363 Mounting: SMD Frequency: 200MHz Current gain: 420...800 Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857CW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Frequency: 200MHz Current gain: 420...800 Kind of package: reel; tape Power dissipation: 0.25W |
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BAV99W_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Leakage current: 2.5µA Max. forward impulse current: 4A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Kind of package: reel; tape |
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BC847BW-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BW_R2_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 23938 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJMH040N60EC_T0_00201 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Power dissipation: 200W Case: TO247AD-3 Mounting: THT Gate charge: 144nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 40mΩ Pulsed drain current: 212A Polarisation: unipolar Drain current: 71A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MMBT5551W-AU_R1_007A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
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MMBT5551W_R1_00701 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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SS14_R2_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 6mA Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
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SS14W_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Case: SMA-W Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
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GS1M-AU_R2_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
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GS1MWG_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
Produkt ist nicht verfügbar |
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GS1MWG_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1N5339B_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
auf Bestellung 7935 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5338B_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
auf Bestellung 6832 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMP120N60EC_T0_00001 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAT43W_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
| BC846BS_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 1595 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS16TS_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 99 Stücke:
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| BAS16TW_R1_00001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
auf Bestellung 2774 Stücke:
Lieferzeit 14-21 Tag (e)
| BC807-40W_R1_00001 |
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Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| BC847BPN_R1_00001 |
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Hersteller: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 575 Stücke:
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| BC847BS_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3573 Stücke:
Lieferzeit 14-21 Tag (e)
| BC807-40_R1_00001 |
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Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
auf Bestellung 4772 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS123_R1_00001 |
|
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.68A
Gate charge: 1.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.68A
Gate charge: 1.8nC
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| KBJ2010_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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| MMBTA44_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Current gain: 50...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Current gain: 50...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW56-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2195 Stücke:
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| BAW56_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
auf Bestellung 8898 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW56W_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
auf Bestellung 2925 Stücke:
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| P6SMBJ33A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 836 Stücke:
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| GBU810_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.05V
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMBJ5.0A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT42W_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT42WS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS316_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Leakage current: 0.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Leakage current: 0.5µA
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| BAV21W-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.2mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV21W_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 0.2mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAV21WS-AU_R1_000A1 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.1µA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMBJ30A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
| GBJ2510_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT54WS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 2µA
Produkt ist nicht verfügbar
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| LL4148_R1_10001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
auf Bestellung 15840 Stücke:
Lieferzeit 14-21 Tag (e)
| LL4148_R2_10001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
auf Bestellung 44118 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4148W_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
auf Bestellung 2346 Stücke:
Lieferzeit 14-21 Tag (e)
| GS1M_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4148WS_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT54S_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 2µA
auf Bestellung 6599 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV103_R1_10001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
auf Bestellung 8347 Stücke:
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| ES1J_R2_00001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
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| GS1M_R2_00001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Produkt ist nicht verfügbar
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| BAS16TS-AU_R1_000A1 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
auf Bestellung 28227 Stücke:
Lieferzeit 14-21 Tag (e)
| BC856BW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
auf Bestellung 11830 Stücke:
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| BC817-25W_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
auf Bestellung 190 Stücke:
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| BC817-25W_R2_00001 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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| SS16_R2_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
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| P4SMAJ5.0A_R1_00001 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
auf Bestellung 7310 Stücke:
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| BC817-25W-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Application: automotive industry
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| 1N5408G_R2_00001 |
Hersteller: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
auf Bestellung 3848 Stücke:
Lieferzeit 14-21 Tag (e)
| BC846BW_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 11745 Stücke:
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| BC857CS_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.225W
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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| BC857CW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.25W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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| BAV99W_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| BC847BW-AU_R1_000A1 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2960 Stücke:
Lieferzeit 14-21 Tag (e)
| BC847BW_R2_00001 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 23938 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMH040N60EC_T0_00201 |
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Case: TO247AD-3
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 212A
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Case: TO247AD-3
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 212A
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
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| MMBT5551W-AU_R1_007A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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| MMBT5551W_R1_00701 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| SS14_R2_00001 |
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SS14W_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA-W
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA-W
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
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| GS1M-AU_R2_000A1 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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| GS1MWG_R1_00001 |
|
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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| GS1MWG_R2_00001 |
Hersteller: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| 1N5339B_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
auf Bestellung 7935 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5338B_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
auf Bestellung 6832 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMP120N60EC_T0_00001 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)