| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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1N5339B_R2_00001 | PanJit |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
auf Bestellung 7935 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5338B_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
auf Bestellung 6832 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PJMP120N60EC_T0_00001 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SD103CWS_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape Max. forward voltage: 0.6V Features of semiconductor devices: fast switching Max. off-state voltage: 20V Load current: 0.35A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SOD323 Type of diode: Schottky switching Mounting: SMD Max. forward impulse current: 2A |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70WS_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.225W Leakage current: 10µA |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMH120N60EC_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
Produkt ist nicht verfügbar |
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PJMF120N60EC_T0_00001 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 33W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
Produkt ist nicht verfügbar |
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BC817-40-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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BC817-40W-AU_R2_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT323 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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MMBT2222A-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MMBT2222A_R1_00501 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MMBT2222ATB_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT523 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MMBT2222AW_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT3904-AU_R1_005A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MMBT3904FN3_R1_00501 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: DFN1006-3 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| P6KE200A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| P6KE200A_R2_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BC817-25-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817-25_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ33A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBT4401-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT4401_R1_00501 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
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MMBT4401W_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42W_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.15W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT5551-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT5551_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ15A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ15A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1.5KE200A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 1.5KE200A_R2_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 190...210V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 1.5KE36A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 30A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BCP56-16-AU_R2_007A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 2.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC847AW_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P6KE18A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Breakdown voltage: 17.1...18.9V Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 1.5KE39CA_R2_00001 | PanJit |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 28A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BCP53-16-AU_R2_007A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 1A; SOT223; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJMF060N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB Type of transistor: N-MOSFET Case: ITO220AB Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: 30V Polarisation: unipolar Drain current: 48.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJMH060N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3 Type of transistor: N-MOSFET Case: TO247AD-3 Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: 30V Polarisation: unipolar Drain current: 58.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PJMP060N65FR2_T0_00601 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB Type of transistor: N-MOSFET Case: TO220AB Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: 30V Polarisation: unipolar Drain current: 58.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT2907A-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT2907AW_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Case: SOT323 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBJ2010_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 20A Max. forward impulse current: 260A Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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P6SMBJ24A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMBJ24A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GBU2510_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| GBU2510H_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BC857C-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC857C_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BC857CS-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH |
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BC857CW-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| BSS138_R1_00501 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; DFN2020B-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Case: DFN2020B-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| PJMK040N60EC_T0_00201 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3 Type of transistor: N-MOSFET Case: TO247AD-3 Mounting: THT Kind of package: reel; tape Gate-source voltage: 40V Polarisation: unipolar Drain current: 71A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MMBT5401-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT5401_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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| PSMQC042N10LS2_R2_00201 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 109A Power dissipation: 115W Case: DFN5060-8 Gate-source voltage: 20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 58nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
BCX56-16-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.4W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT89 Mounting: SMD Frequency: 100MHz Power dissipation: 1.4W Application: automotive industry Kind of package: reel; tape |
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Im Einkaufswagen Stück im Wert von UAH |
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1N4733A_AY_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.1V; DO41; single diode; Ammo Pack; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N47xxA |
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Im Einkaufswagen Stück im Wert von UAH |
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1N4733A_R2_00001 | PanJit |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.1V; DO41; single diode; tape; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5339B_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
auf Bestellung 7935 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5338B_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
auf Bestellung 6832 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMP120N60EC_T0_00001 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
| SD103CWS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Max. forward voltage: 0.6V
Features of semiconductor devices: fast switching
Max. off-state voltage: 20V
Load current: 0.35A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Max. forward voltage: 0.6V
Features of semiconductor devices: fast switching
Max. off-state voltage: 20V
Load current: 0.35A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 2A
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS70WS_R1_00001 |
|
Hersteller: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 10µA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| PJMH120N60EC_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF120N60EC_T0_00001 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-40-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BC817-40W-AU_R2_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2222A-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MMBT2222A_R1_00501 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBT2222ATB_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBT2222AW_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBT3904-AU_R1_005A1 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMBT3904FN3_R1_00501 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| P6KE200A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| P6KE200A_R2_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 190÷210V; 2.2A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| BC817-25-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-25_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMBJ33A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MMBT4401-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| MMBT4401_R1_00501 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMBT4401W_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMBTA42-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 50MHz
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| MMBTA42_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| MMBTA42W_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| MMBT5551-AU_R1_000A1 |
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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Stück im Wert von UAH
| MMBT5551_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| P6SMBJ15A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| P6SMBJ15A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Produkt ist nicht verfügbar
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| 1.5KE200A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
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| 1.5KE200A_R2_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 190÷210V; 5.5A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 190...210V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
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| 1.5KE36A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 34.2÷37.8V; 30A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 30A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
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| BCP56-16-AU_R2_007A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| BC847AW_R1_00001 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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| P6KE18A_AY_00001 |
Hersteller: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Breakdown voltage: 17.1...18.9V
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Breakdown voltage: 17.1...18.9V
Manufacturer series: P6KE
Produkt ist nicht verfügbar
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| 1.5KE39CA_R2_00001 |
|
Hersteller: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 28A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
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| BCP53-16-AU_R2_007A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| PJMF060N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Case: ITO220AB
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 48.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Case: ITO220AB
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 48.3A
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| PJMH060N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Case: TO247AD-3
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 58.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Case: TO247AD-3
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 58.3A
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| PJMP060N65FR2_T0_00601 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 58.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: 30V
Polarisation: unipolar
Drain current: 58.3A
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| MMBT2907A-AU_R1_000A1 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MMBT2907AW_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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| GBJ2010_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 260A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 260A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| P6SMBJ24A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| P6SMBJ24A_R1_00001 |
|
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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Mindestbestellmenge: 800 Stücke
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| GBU2510_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| GBU2510H_T0_00601 |
|
Hersteller: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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| BC857C-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| BC857C_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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| BC857CS-AU_R1_000A1 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| BC857CW-AU_R1_000A1 |
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| BSS138_R1_00501 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; DFN2020B-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Case: DFN2020B-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; DFN2020B-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Case: DFN2020B-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJMK040N60EC_T0_00201 |
|
Hersteller: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Case: TO247AD-3
Mounting: THT
Kind of package: reel; tape
Gate-source voltage: 40V
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Case: TO247AD-3
Mounting: THT
Kind of package: reel; tape
Gate-source voltage: 40V
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
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| MMBT5401-AU_R1_000A1 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MMBT5401_R1_00001 |
|
Hersteller: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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| PSMQC042N10LS2_R2_00201 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 109A
Power dissipation: 115W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 109A
Power dissipation: 115W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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| BCX56-16-AU_R1_000A1 |
|
Hersteller: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.4W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Power dissipation: 1.4W
Application: automotive industry
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.4W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Power dissipation: 1.4W
Application: automotive industry
Kind of package: reel; tape
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| 1N4733A_AY_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
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| 1N4733A_R2_00001 |
|
Hersteller: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N47xxA
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