IRF710 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 505+ | 0.9 EUR |
Produktrezensionen
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Technische Details IRF710 onsemi
Description: MOSFET N-CH 400V 2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRF710 nach Preis ab 0.53 EUR bis 1.29 EUR
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IRF710 | Hersteller : Harris Corporation |
Description: MOSFET N-CH 400V 2A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 18893 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF710 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 18893 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 | Hersteller : HARRIS |
IRF710 |
auf Bestellung 4630 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 | Hersteller : Siliconix |
N-MOSFET 0.8A 400V 20W 3.6Ω IRF710 IRF710 TIRF710 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF710 | Hersteller : ONSEMI |
Description: ONSEMI - IRF710 - IRF710, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 4630 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF710 Produktcode: 23685
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 400 Idd,A: 2 Rds(on), Ohm: 03.06.2015 Ciss, pF/Qg, nC: 170/17 JHGF: THT |
Produkt ist nicht verfügbar
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IRF710 Produktcode: 123225
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller : SILI |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 400 V Idd,A: 2 A Rds(on), Ohm: 3,6 Ohm Ciss, pF/Qg, nC: 170/17 JHGF: THT |
Produkt ist nicht verfügbar
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IRF710 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRF7 |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : onsemi / Fairchild |
MOSFETs |
Produkt ist nicht verfügbar |