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NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1586 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.47 EUR
10+9.08 EUR
50+7.2 EUR
100+6.59 EUR
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NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
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800+4.53 EUR
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NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
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2+11.71 EUR
10+7.83 EUR
100+5.64 EUR
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NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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6+3.89 EUR
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NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
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NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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800+2.05 EUR
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NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1577 Stücke:
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4+5.93 EUR
10+3.84 EUR
100+2.67 EUR
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NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.48 EUR
Mindestbestellmenge: 2500 Stücke
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NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5130 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.01 EUR
10+3.22 EUR
50+2.45 EUR
100+2.2 EUR
500+1.77 EUR
Mindestbestellmenge: 5 Stücke
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NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500 Stücke
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NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
10+2.95 EUR
50+2.25 EUR
100+2.01 EUR
500+1.62 EUR
Mindestbestellmenge: 5 Stücke
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NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.5 EUR
1600+2.38 EUR
Mindestbestellmenge: 800 Stücke
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NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2877 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.68 EUR
100+3.27 EUR
Mindestbestellmenge: 4 Stücke
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NP50P04SDG-E1-AY NP50P04SDG-E1-AY Renesas Electronics Corporation D19072EJ2V0DS00.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.75 EUR
Mindestbestellmenge: 2500 Stücke
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NP50P04SDG-E1-AY NP50P04SDG-E1-AY Renesas Electronics Corporation D19072EJ2V0DS00.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8683 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+2.36 EUR
100+2.17 EUR
500+2.14 EUR
Mindestbestellmenge: 4 Stücke
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NP50P06KDG-E1-AY NP50P06KDG-E1-AY Renesas Electronics Corporation np50p06kdg-datasheet?r=499781 Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NP50P06KDG-E1-AY NP50P06KDG-E1-AY Renesas Electronics Corporation np50p06kdg-datasheet?r=499781 Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.19 EUR
10+4.69 EUR
50+3.62 EUR
100+3.27 EUR
Mindestbestellmenge: 3 Stücke
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NP50P06SDG-E1-AY NP50P06SDG-E1-AY Renesas Electronics Corporation np50p06sdg-data-sheet Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 152500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.96 EUR
7500+1.84 EUR
Mindestbestellmenge: 2500 Stücke
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NP50P06SDG-E1-AY NP50P06SDG-E1-AY Renesas Electronics Corporation np50p06sdg-data-sheet Description: MOSFET P-CH 60V 50A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
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NP75P03YDG-E1-AY NP75P03YDG-E1-AY Renesas Electronics Corporation np75p03ydg-data-sheet Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP75P03YDG-E1-AY NP75P03YDG-E1-AY Renesas Electronics Corporation np75p03ydg-data-sheet Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
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NP75P04YLG-E1-AY NP75P04YLG-E1-AY Renesas Electronics Corporation np75p04ylg-data-sheet Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
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NP75P04YLG-E1-AY NP75P04YLG-E1-AY Renesas Electronics Corporation np75p04ylg-data-sheet Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
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NP89N04PUK-E1-AY NP89N04PUK-E1-AY Renesas Electronics Corporation np89n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
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NP89N04PUK-E1-AY NP89N04PUK-E1-AY Renesas Electronics Corporation np89n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
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R5F566NDDDLK#20 R5F566NDDDLK#20 Renesas Electronics Corporation rx66n-group-datasheet?r=1170201 Description: IC MCU 32BIT 2MB FLASH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (7x7)
Number of I/O: 111
DigiKey Programmable: Not Verified
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R5F566NNDDBG#20 R5F566NNDDBG#20 Renesas Electronics Corporation rx66n Description: IC MCU 32BIT 4MB FLASH 176LFBGA
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R5F566NNDDFC#30 R5F566NNDDFC#30 Renesas Electronics Corporation rh850f1l-rh850f1m-rh850f1h-datasheet Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 8x12b, 21x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
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R5F566NNHDFC#30 R5F566NNHDFC#30 Renesas Electronics Corporation rx66n Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
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74HC123AP-E Renesas Electronics Corporation Description: IC UNI-LOGIC GATE BUFFER SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZSSC3230BC1D-ES Renesas Electronics Corporation Description: IC CAP SENSOR SIGNAL COND ENG SM
Packaging: Bulk
Package / Case: Die
Output Type: I²C
Mounting Type: Surface Mount
Type: Capacitive Sensor
Operating Temperature: -40°C ~ 85°C (TA)
Input Type: Analog, Digital
Supplier Device Package: Die
Part Status: Active
Current - Supply: 1.1 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RTK7EKA2E1S00001BE RTK7EKA2E1S00001BE Renesas Electronics Corporation ek-ra2e1-v1-users-manual Description: EK-RA2E1 R7FA2E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M23
Utilized IC / Part: RA2E1, R7FA2E1
Platform: EK-RA2E1
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RTK7EKA4M1S00001BU RTK7EKA4M1S00001BU Renesas Electronics Corporation Description: EK-RA4M1 R7FA4M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA4M1, R7FA4M1
Platform: EK-RA4M1
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RTK7EKA6M1S00001BU RTK7EKA6M1S00001BU Renesas Electronics Corporation Description: EK-RA6M1 R7FA6M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA6M1, R7FA6M1
Platform: EK-RA6M1
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RTK7EKA6M5S00001BE RTK7EKA6M5S00001BE Renesas Electronics Corporation ek-ra6m5-v1-users-manual?language=en&r=1494266 Description: EK-RA6M5 R7FA6M5 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6M5, R7FA6M5
Platform: EK-RA6M5
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RTK7FPA4E1S00001BE RTK7FPA4E1S00001BE Renesas Electronics Corporation fpb-ra4e1-users-manual Description: FPB-RA4E1 R7FA4E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA4E1, R7FA4E1
Platform: FPB-RA4E1
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RTK7FPA6E1S00001BE RTK7FPA6E1S00001BE Renesas Electronics Corporation fpb-ra6e1-users-manual Description: FPB-RA6E1 R7FA6E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6E1, R7FA6E1
Platform: FPB-RA6E1
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ISL68301IRAZ-T7A ISL68301IRAZ-T7A Renesas Electronics Corporation Description: SNGL PH DIG DC/DC CONT
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 16V, 4.5V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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M3016316035NX0IBCY Renesas Electronics Corporation m3004316-m3008316-m3016316-m3032316-datasheet Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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M3016316045NX0IBCY Renesas Electronics Corporation m3004316-m3008316-m3016316-m3032316-datasheet Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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RV1S2211ACCSP-10YV#SC0 RV1S2211ACCSP-10YV#SC0 Renesas Electronics Corporation rv1s2211a-data-sheet-r08ds0184ej0100 Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 40mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 40V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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RV1S2285ACCSP-10YC#SC0 RV1S2285ACCSP-10YC#SC0 Renesas Electronics Corporation rv1s2285a-data-sheet-r08ds0186ej0100 Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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RV1S2285ACCSP-10YV#SC0 RV1S2285ACCSP-10YV#SC0 Renesas Electronics Corporation rv1s2285a-data-sheet-r08ds0186ej0100 Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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F2915EVBI F2915EVBI Renesas Electronics Corporation f2915-datasheet Description: RF
Packaging: Box
For Use With/Related Products: F2915
Frequency: 50MHz ~ 8GHz
Type: Switch, SP5T
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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2SK2225-80-E#T2 2SK2225-80-E#T2 Renesas Electronics Corporation 2sk2225-80-e-datasheet?r=1336401 Description: ABU / MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
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ATXP064B-CCUE-T Renesas Electronics Corporation Description: IC FLASH 64MBIT SPI/OCTAL 24CBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-CBGA (6x8)
Write Cycle Time - Word, Page: 25µs, 12ms
Memory Interface: SPI - Octal I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-UIUE-T Renesas Electronics Corporation at25sl128a-datasheet?r=1608821 Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-UIUE-T Renesas Electronics Corporation at25sl128a-datasheet?r=1608821 Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Cut Tape (CT)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-SUE-T AT25SL128A-SUE-T Renesas Electronics Corporation Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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AT25SL641-SUE-T AT25SL641-SUE-T Renesas Electronics Corporation Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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2SK3814-Z-E1-AZ 2SK3814-Z-E1-AZ Renesas Electronics Corporation 2sk3814-data-sheet Description: MP-3 AL
Packaging: Strip
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 84W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
auf Bestellung 4000 Stücke:
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10+3.96 EUR
100+3.15 EUR
500+2.67 EUR
1000+2.26 EUR
2000+2.15 EUR
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RAA2900014H12HPD#GB2 RAA2900014H12HPD#GB2 Renesas Electronics Corporation Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
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RAA2900014H12HPD#GB2 RAA2900014H12HPD#GB2 Renesas Electronics Corporation Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900024H12HPD#GB1 RAA2900024H12HPD#GB1 Renesas Electronics Corporation Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900034H12HPD#GB1 RAA2900034H12HPD#GB1 Renesas Electronics Corporation raa2900034h12hpd-intelligent-power-device Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900034H12HPD#GB1 RAA2900034H12HPD#GB1 Renesas Electronics Corporation raa2900034h12hpd-intelligent-power-device Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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UPD166031AT1U(1)-E1-AY UPD166031AT1U(1)-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166031AT1U(1)-E1-AY UPD166031AT1U(1)-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166032T1U(1)-E1-AY UPD166032T1U(1)-E1-AY Renesas Electronics Corporation upd166032t1u-data-sheet Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1586 Stücke:
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2+13.47 EUR
10+9.08 EUR
50+7.2 EUR
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NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
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800+4.53 EUR
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NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
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2+11.71 EUR
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NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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6+3.89 EUR
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NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
2500+1.34 EUR
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NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
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800+2.05 EUR
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NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1577 Stücke:
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4+5.93 EUR
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NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+1.48 EUR
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NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5130 Stücke:
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5+5.01 EUR
10+3.22 EUR
50+2.45 EUR
100+2.2 EUR
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NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+1.34 EUR
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NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4894 Stücke:
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100+2.01 EUR
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NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
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800+2.5 EUR
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NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
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NP50P04SDG-E1-AY D19072EJ2V0DS00.pdf
NP50P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
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NP50P04SDG-E1-AY D19072EJ2V0DS00.pdf
NP50P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8683 Stücke:
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NP50P06KDG-E1-AY np50p06kdg-datasheet?r=499781
NP50P06KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP50P06KDG-E1-AY np50p06kdg-datasheet?r=499781
NP50P06KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 719 Stücke:
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NP50P06SDG-E1-AY np50p06sdg-data-sheet
NP50P06SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 152500 Stücke:
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2500+1.96 EUR
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NP50P06SDG-E1-AY np50p06sdg-data-sheet
NP50P06SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 154468 Stücke:
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NP75P03YDG-E1-AY np75p03ydg-data-sheet
NP75P03YDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP75P03YDG-E1-AY np75p03ydg-data-sheet
NP75P03YDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4742 Stücke:
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4+5.71 EUR
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NP75P04YLG-E1-AY np75p04ylg-data-sheet
NP75P04YLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
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2500+2.09 EUR
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NP75P04YLG-E1-AY np75p04ylg-data-sheet
NP75P04YLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6053 Stücke:
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4+6.76 EUR
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NP89N04PUK-E1-AY np89n04pukmos-field-effect-transistor
NP89N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 2400 Stücke:
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800+2.2 EUR
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NP89N04PUK-E1-AY np89n04pukmos-field-effect-transistor
NP89N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
auf Bestellung 3075 Stücke:
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4+5.62 EUR
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R5F566NDDDLK#20 rx66n-group-datasheet?r=1170201
R5F566NDDDLK#20
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 2MB FLASH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (7x7)
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 1406 Stücke:
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1+27.75 EUR
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R5F566NNDDBG#20 rx66n
R5F566NNDDBG#20
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFBGA
auf Bestellung 54 Stücke:
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1+31.64 EUR
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R5F566NNDDFC#30 rh850f1l-rh850f1m-rh850f1h-datasheet
R5F566NNDDFC#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 8x12b, 21x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
auf Bestellung 54 Stücke:
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1+33.46 EUR
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R5F566NNHDFC#30 rx66n
R5F566NNHDFC#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
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1+32.11 EUR
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74HC123AP-E
Hersteller: Renesas Electronics Corporation
Description: IC UNI-LOGIC GATE BUFFER SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZSSC3230BC1D-ES
Hersteller: Renesas Electronics Corporation
Description: IC CAP SENSOR SIGNAL COND ENG SM
Packaging: Bulk
Package / Case: Die
Output Type: I²C
Mounting Type: Surface Mount
Type: Capacitive Sensor
Operating Temperature: -40°C ~ 85°C (TA)
Input Type: Analog, Digital
Supplier Device Package: Die
Part Status: Active
Current - Supply: 1.1 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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RTK7EKA2E1S00001BE ek-ra2e1-v1-users-manual
RTK7EKA2E1S00001BE
Hersteller: Renesas Electronics Corporation
Description: EK-RA2E1 R7FA2E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M23
Utilized IC / Part: RA2E1, R7FA2E1
Platform: EK-RA2E1
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RTK7EKA4M1S00001BU
RTK7EKA4M1S00001BU
Hersteller: Renesas Electronics Corporation
Description: EK-RA4M1 R7FA4M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA4M1, R7FA4M1
Platform: EK-RA4M1
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RTK7EKA6M1S00001BU
RTK7EKA6M1S00001BU
Hersteller: Renesas Electronics Corporation
Description: EK-RA6M1 R7FA6M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA6M1, R7FA6M1
Platform: EK-RA6M1
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RTK7EKA6M5S00001BE ek-ra6m5-v1-users-manual?language=en&r=1494266
RTK7EKA6M5S00001BE
Hersteller: Renesas Electronics Corporation
Description: EK-RA6M5 R7FA6M5 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6M5, R7FA6M5
Platform: EK-RA6M5
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RTK7FPA4E1S00001BE fpb-ra4e1-users-manual
RTK7FPA4E1S00001BE
Hersteller: Renesas Electronics Corporation
Description: FPB-RA4E1 R7FA4E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA4E1, R7FA4E1
Platform: FPB-RA4E1
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RTK7FPA6E1S00001BE fpb-ra6e1-users-manual
RTK7FPA6E1S00001BE
Hersteller: Renesas Electronics Corporation
Description: FPB-RA6E1 R7FA6E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6E1, R7FA6E1
Platform: FPB-RA6E1
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ISL68301IRAZ-T7A
ISL68301IRAZ-T7A
Hersteller: Renesas Electronics Corporation
Description: SNGL PH DIG DC/DC CONT
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 16V, 4.5V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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M3016316035NX0IBCY m3004316-m3008316-m3016316-m3032316-datasheet
Hersteller: Renesas Electronics Corporation
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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1+109.85 EUR
10+101.42 EUR
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M3016316045NX0IBCY m3004316-m3008316-m3016316-m3032316-datasheet
Hersteller: Renesas Electronics Corporation
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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RV1S2211ACCSP-10YV#SC0 rv1s2211a-data-sheet-r08ds0184ej0100
RV1S2211ACCSP-10YV#SC0
Hersteller: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 40mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 40V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 422 Stücke:
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6+3.69 EUR
20+2.33 EUR
100+1.73 EUR
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RV1S2285ACCSP-10YC#SC0 rv1s2285a-data-sheet-r08ds0186ej0100
RV1S2285ACCSP-10YC#SC0
Hersteller: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 5292 Stücke:
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6+3.62 EUR
10+2.42 EUR
100+1.86 EUR
500+1.68 EUR
1000+1.44 EUR
2000+1.37 EUR
5000+1.33 EUR
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RV1S2285ACCSP-10YV#SC0 rv1s2285a-data-sheet-r08ds0186ej0100
RV1S2285ACCSP-10YV#SC0
Hersteller: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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8+2.78 EUR
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F2915EVBI f2915-datasheet
F2915EVBI
Hersteller: Renesas Electronics Corporation
Description: RF
Packaging: Box
For Use With/Related Products: F2915
Frequency: 50MHz ~ 8GHz
Type: Switch, SP5T
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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2SK2225-80-E#T2 2sk2225-80-e-datasheet?r=1336401
2SK2225-80-E#T2
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 396 Stücke:
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1+39.14 EUR
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ATXP064B-CCUE-T
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 64MBIT SPI/OCTAL 24CBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-CBGA (6x8)
Write Cycle Time - Word, Page: 25µs, 12ms
Memory Interface: SPI - Octal I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-UIUE-T at25sl128a-datasheet?r=1608821
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-UIUE-T at25sl128a-datasheet?r=1608821
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Cut Tape (CT)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT25SL128A-SUE-T
AT25SL128A-SUE-T
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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AT25SL641-SUE-T
AT25SL641-SUE-T
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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2SK3814-Z-E1-AZ 2sk3814-data-sheet
2SK3814-Z-E1-AZ
Hersteller: Renesas Electronics Corporation
Description: MP-3 AL
Packaging: Strip
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 84W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
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5+4.77 EUR
10+3.96 EUR
100+3.15 EUR
500+2.67 EUR
1000+2.26 EUR
2000+2.15 EUR
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RAA2900014H12HPD#GB2
RAA2900014H12HPD#GB2
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900014H12HPD#GB2
RAA2900014H12HPD#GB2
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900024H12HPD#GB1
RAA2900024H12HPD#GB1
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900034H12HPD#GB1 raa2900034h12hpd-intelligent-power-device
RAA2900034H12HPD#GB1
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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RAA2900034H12HPD#GB1 raa2900034h12hpd-intelligent-power-device
RAA2900034H12HPD#GB1
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Produkt ist nicht verfügbar
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UPD166031AT1U(1)-E1-AY upd166031at1u-data-sheet
UPD166031AT1U(1)-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166031AT1U(1)-E1-AY upd166031at1u-data-sheet
UPD166031AT1U(1)-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166032T1U(1)-E1-AY upd166032t1u-data-sheet
UPD166032T1U(1)-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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