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SLI-325YYT31W SLI-325YYT31W Rohm Semiconductor datasheet?p=SLI-325YY(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW DIFFUSED T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SFR03EZPJ563 SFR03EZPJ563 Rohm Semiconductor sfr-e.pdf Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ563 SFR03EZPJ563 Rohm Semiconductor sfr-e.pdf Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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SDR10EZPJ563 SDR10EZPJ563 Rohm Semiconductor sdr-e.pdf Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.048 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPJ563 SDR10EZPJ563 Rohm Semiconductor sdr-e.pdf Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
211+0.084 EUR
250+0.072 EUR
500+0.064 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
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LTR100JZPJ563 LTR100JZPJ563 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.24 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ563 LTR100JZPJ563 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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SDR03EZPJ563 SDR03EZPJ563 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
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SDR03EZPJ563 SDR03EZPJ563 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
auf Bestellung 9660 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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ESR03EZPF2491 ESR03EZPF2491 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF2491 ESR03EZPF2491 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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SLI-325YCT31W SLI-325YCT31W Rohm Semiconductor datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SLI-325YCT31W SLI-325YCT31W Rohm Semiconductor datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SML-412MWT86 SML-412MWT86 Rohm Semiconductor SML-412MW.pdf Description: LED GREEN DIFFUSED CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.50mm
Wavelength - Peak: 570nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Produkt ist nicht verfügbar
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BD63717MUV-E2 Rohm Semiconductor bd63717muv-e.pdf Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Produkt ist nicht verfügbar
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BD63717MUV-E2 Rohm Semiconductor bd63717muv-e.pdf Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+2.2 EUR
25+2 EUR
100+1.79 EUR
250+1.69 EUR
500+1.62 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
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ML5206-001MBZ0AVL ML5206-001MBZ0AVL Rohm Semiconductor datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
Produkt ist nicht verfügbar
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ML5206-001MBZ0AVL ML5206-001MBZ0AVL Rohm Semiconductor datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+1.81 EUR
25+1.64 EUR
100+1.46 EUR
250+1.38 EUR
500+1.32 EUR
1000+1.28 EUR
Mindestbestellmenge: 8
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MCR100SJQPJ000 MCR100SJQPJ000 Rohm Semiconductor datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPJ000 MCR100SJQPJ000 Rohm Semiconductor datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF1000 MCR100SJQPF1000 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF1000 MCR100SJQPF1000 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF10R0 MCR100SJQPF10R0 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF10R0 MCR100SJQPF10R0 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
Produkt ist nicht verfügbar
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BM3G005MUV-EVK-003 BM3G005MUV-EVK-003 Rohm Semiconductor bm3g005muv-evk-003_ug-e.pdf Description: EVAL BOARD FOR BM3G005
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM3G005
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.91 EUR
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LTR100JZPJ180 LTR100JZPJ180 Rohm Semiconductor ltr-e.pdf Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.24 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ180 LTR100JZPJ180 Rohm Semiconductor ltr-e.pdf Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
auf Bestellung 4033 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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LTR100JZPF1800 LTR100JZPF1800 Rohm Semiconductor ltr-e.pdf Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
Produkt ist nicht verfügbar
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LTR100JZPF1800 LTR100JZPF1800 Rohm Semiconductor ltr-e.pdf Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
auf Bestellung 3723 Stücke:
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32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
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LTR100JZPF2400 LTR100JZPF2400 Rohm Semiconductor ltr-e.pdf Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
Produkt ist nicht verfügbar
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LTR100JZPF2400 LTR100JZPF2400 Rohm Semiconductor ltr-e.pdf Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
auf Bestellung 3691 Stücke:
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19+0.95 EUR
32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
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LTR100JZPF5602 LTR100JZPF5602 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
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LTR100JZPF5602 LTR100JZPF5602 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 3991 Stücke:
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19+0.95 EUR
32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
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RH7G04DBLFRATCB RH7G04DBLFRATCB Rohm Semiconductor rh7g04dblfratcb-e.pdf Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
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RH7G04DBLFRATCB RH7G04DBLFRATCB Rohm Semiconductor rh7g04dblfratcb-e.pdf Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
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7+2.59 EUR
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100+1.1 EUR
500+0.87 EUR
1000+0.79 EUR
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RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
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RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
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7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
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RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
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6+3.03 EUR
10+1.93 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.97 EUR
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RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
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10+2 EUR
100+1.35 EUR
500+1.08 EUR
1000+1.02 EUR
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RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
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3000+0.89 EUR
Mindestbestellmenge: 3000
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RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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6+3.19 EUR
10+2.04 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.04 EUR
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RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.05 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.05 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.05 EUR
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RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.95 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.12 EUR
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RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.96 EUR
Mindestbestellmenge: 3000
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RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.4 EUR
10+2.17 EUR
100+1.47 EUR
500+1.18 EUR
1000+1.13 EUR
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RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.99 EUR
Mindestbestellmenge: 3000
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RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
10+2.23 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
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RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.03 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
10+2.31 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
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RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.03 EUR
Mindestbestellmenge: 3000
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RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
10+2.31 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 5
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RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
Produkt ist nicht verfügbar
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RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
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MCR01SMQPJ000 MCR01SMQPJ000 Rohm Semiconductor datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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SLI-325YYT31W datasheet?p=SLI-325YY(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-325YYT31W
Hersteller: Rohm Semiconductor
Description: LED YELLOW DIFFUSED T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SFR03EZPJ563 sfr-e.pdf
SFR03EZPJ563
Hersteller: Rohm Semiconductor
Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
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SFR03EZPJ563 sfr-e.pdf
SFR03EZPJ563
Hersteller: Rohm Semiconductor
Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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SDR10EZPJ563 sdr-e.pdf
SDR10EZPJ563
Hersteller: Rohm Semiconductor
Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.048 EUR
Mindestbestellmenge: 5000
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SDR10EZPJ563 sdr-e.pdf
SDR10EZPJ563
Hersteller: Rohm Semiconductor
Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
211+0.084 EUR
250+0.072 EUR
500+0.064 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
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LTR100JZPJ563 ltr-e.pdf
LTR100JZPJ563
Hersteller: Rohm Semiconductor
Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.24 EUR
Mindestbestellmenge: 4000
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LTR100JZPJ563 ltr-e.pdf
LTR100JZPJ563
Hersteller: Rohm Semiconductor
Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
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SDR03EZPJ563 sdr-e.pdf
SDR03EZPJ563
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
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SDR03EZPJ563 sdr-e.pdf
SDR03EZPJ563
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
auf Bestellung 9660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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ESR03EZPF2491 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF2491 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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SLI-325YCT31W datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-325YCT31W
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SLI-325YCT31W datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-325YCT31W
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
Produkt ist nicht verfügbar
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SML-412MWT86 SML-412MW.pdf
SML-412MWT86
Hersteller: Rohm Semiconductor
Description: LED GREEN DIFFUSED CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.50mm
Wavelength - Peak: 570nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Produkt ist nicht verfügbar
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BD63717MUV-E2 bd63717muv-e.pdf
Hersteller: Rohm Semiconductor
Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Produkt ist nicht verfügbar
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BD63717MUV-E2 bd63717muv-e.pdf
Hersteller: Rohm Semiconductor
Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.2 EUR
25+2 EUR
100+1.79 EUR
250+1.69 EUR
500+1.62 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
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ML5206-001MBZ0AVL datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML5206-001MBZ0AVL
Hersteller: Rohm Semiconductor
Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
Produkt ist nicht verfügbar
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ML5206-001MBZ0AVL datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML5206-001MBZ0AVL
Hersteller: Rohm Semiconductor
Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+1.81 EUR
25+1.64 EUR
100+1.46 EUR
250+1.38 EUR
500+1.32 EUR
1000+1.28 EUR
Mindestbestellmenge: 8
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MCR100SJQPJ000 datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPJ000
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPJ000 datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPJ000
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF1000 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF1000
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF1000 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF1000
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF10R0 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF10R0
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
Produkt ist nicht verfügbar
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MCR100SJQPF10R0 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF10R0
Hersteller: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
Produkt ist nicht verfügbar
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BM3G005MUV-EVK-003 bm3g005muv-evk-003_ug-e.pdf
BM3G005MUV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM3G005
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM3G005
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.91 EUR
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LTR100JZPJ180 ltr-e.pdf
LTR100JZPJ180
Hersteller: Rohm Semiconductor
Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.24 EUR
Mindestbestellmenge: 4000
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LTR100JZPJ180 ltr-e.pdf
LTR100JZPJ180
Hersteller: Rohm Semiconductor
Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
auf Bestellung 4033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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LTR100JZPF1800 ltr-e.pdf
LTR100JZPF1800
Hersteller: Rohm Semiconductor
Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
Produkt ist nicht verfügbar
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LTR100JZPF1800 ltr-e.pdf
LTR100JZPF1800
Hersteller: Rohm Semiconductor
Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
auf Bestellung 3723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 19
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LTR100JZPF2400 ltr-e.pdf
LTR100JZPF2400
Hersteller: Rohm Semiconductor
Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
Produkt ist nicht verfügbar
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LTR100JZPF2400 ltr-e.pdf
LTR100JZPF2400
Hersteller: Rohm Semiconductor
Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
auf Bestellung 3691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 19
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LTR100JZPF5602 ltr-e.pdf
LTR100JZPF5602
Hersteller: Rohm Semiconductor
Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
Produkt ist nicht verfügbar
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LTR100JZPF5602 ltr-e.pdf
LTR100JZPF5602
Hersteller: Rohm Semiconductor
Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
auf Bestellung 3991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
32+0.57 EUR
37+0.48 EUR
50+0.43 EUR
100+0.39 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 19
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RH7G04DBLFRATCB rh7g04dblfratcb-e.pdf
RH7G04DBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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RH7G04DBLFRATCB rh7g04dblfratcb-e.pdf
RH7G04DBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
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RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
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RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.93 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.97 EUR
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RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2 EUR
100+1.35 EUR
500+1.08 EUR
1000+1.02 EUR
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RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
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Anzahl Preis
3000+0.89 EUR
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RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.04 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.04 EUR
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RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.05 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.05 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.95 EUR
Mindestbestellmenge: 3000
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RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.12 EUR
Mindestbestellmenge: 6
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RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.96 EUR
Mindestbestellmenge: 3000
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RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.17 EUR
100+1.47 EUR
500+1.18 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.99 EUR
Mindestbestellmenge: 3000
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RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.23 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
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RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.03 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.31 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 5
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RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.03 EUR
Mindestbestellmenge: 3000
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RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.31 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 5
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RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
Produkt ist nicht verfügbar
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RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
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MCR01SMQPJ000 datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPJ000
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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