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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.16 EUR
10+28.22 EUR
25+26.48 EUR
100+24.57 EUR
250+23.66 EUR
500+23.11 EUR
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 1000 Stücke:
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1+52.41 EUR
10+38.64 EUR
100+38.6 EUR
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.3 EUR
Mindestbestellmenge: 3000
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
37+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 25
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Produkt ist nicht verfügbar
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
auf Bestellung 3 Stücke:
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2998 Stücke:
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10+1.76 EUR
14+1.28 EUR
25+1.15 EUR
100+1.02 EUR
250+0.96 EUR
500+0.92 EUR
1000+0.88 EUR
Mindestbestellmenge: 10
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.06 EUR
Mindestbestellmenge: 9
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
12+1.6 EUR
25+1.45 EUR
100+1.29 EUR
250+1.21 EUR
500+1.16 EUR
1000+1.12 EUR
Mindestbestellmenge: 8
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
Mindestbestellmenge: 3000
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+1.87 EUR
100+1.26 EUR
500+1 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+1.92 EUR
100+1.29 EUR
500+1.03 EUR
1000+0.96 EUR
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+2.18 EUR
100+1.48 EUR
500+1.19 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2943 Stücke:
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4+5.19 EUR
10+3.39 EUR
100+2.36 EUR
500+2.04 EUR
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Resistance: 2.49 kOhms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Produkt ist nicht verfügbar
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 2.49 kOhms
auf Bestellung 3840 Stücke:
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67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
211+0.083 EUR
250+0.07 EUR
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500+0.051 EUR
1000+0.047 EUR
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
114+0.15 EUR
144+0.12 EUR
169+0.1 EUR
197+0.09 EUR
250+0.075 EUR
500+0.067 EUR
1000+0.061 EUR
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BD10IA5MEFJ-ME2 BD10IA5MEFJ-ME2 Rohm Semiconductor datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 700 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 2500 Stücke:
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13+1.41 EUR
18+1.01 EUR
25+0.91 EUR
100+0.8 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1735 Stücke:
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8+2.24 EUR
12+1.6 EUR
100+1.33 EUR
500+1.06 EUR
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
auf Bestellung 8000 Stücke:
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
141+0.12 EUR
162+0.11 EUR
193+0.092 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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TFZVTR24B TFZVTR24B Rohm Semiconductor datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TFZVTR24B TFZVTR24B Rohm Semiconductor datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
83+0.21 EUR
184+0.096 EUR
500+0.095 EUR
1000+0.094 EUR
Mindestbestellmenge: 50
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ESR03EZPF5101 ESR03EZPF5101 Rohm Semiconductor esr03-e.pdf Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF5101 ESR03EZPF5101 Rohm Semiconductor esr03-e.pdf Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
148+0.12 EUR
188+0.094 EUR
225+0.078 EUR
264+0.067 EUR
320+0.055 EUR
500+0.048 EUR
1000+0.043 EUR
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LM324MTX LM324MTX Rohm Semiconductor LM358%2C2904%2C324%2C2902%28MX%2CMTX%29.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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SDR03EZPF2404 SDR03EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
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5000+0.035 EUR
Mindestbestellmenge: 5000
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SDR03EZPF2404 SDR03EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
148+0.12 EUR
188+0.094 EUR
223+0.079 EUR
262+0.067 EUR
316+0.056 EUR
500+0.049 EUR
1000+0.044 EUR
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SDR10EZPF2404 SDR10EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPF2404 SDR10EZPF2404 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
100+0.18 EUR
125+0.14 EUR
148+0.12 EUR
170+0.1 EUR
250+0.088 EUR
500+0.08 EUR
1000+0.071 EUR
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MCR03SEQPF2404 MCR03SEQPF2404 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 100000 Stücke:
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5000+0.0075 EUR
10000+0.0071 EUR
15000+0.007 EUR
25000+0.0068 EUR
35000+0.0067 EUR
50000+0.0066 EUR
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MCR03SEQPF2404 MCR03SEQPF2404 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
1000+0.018 EUR
1250+0.014 EUR
1563+0.011 EUR
1761+0.01 EUR
1916+0.0092 EUR
2058+0.0086 EUR
2500+0.0079 EUR
Mindestbestellmenge: 112
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ESR03EZPF2404 ESR03EZPF2404 Rohm Semiconductor esr-e.pdf Description: RES 2.4M OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPF2404 ESR03EZPF2404 Rohm Semiconductor esr-e.pdf Description: RES 2.4M OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
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MCR01SMQPF2404 MCR01SMQPF2404 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
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MCR01SMQPF2404 MCR01SMQPF2404 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
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SFR01MZPJ242 SFR01MZPJ242 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RES 0402 CA
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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MCR03SEQPF6200 MCR03SEQPF6200 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 620 Ohms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.0075 EUR
10000+0.0071 EUR
15000+0.007 EUR
25000+0.0068 EUR
35000+0.0067 EUR
50000+0.0066 EUR
Mindestbestellmenge: 5000
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MCR03SEQPF6200 MCR03SEQPF6200 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 620 Ohms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
1000+0.018 EUR
1250+0.014 EUR
1563+0.011 EUR
1761+0.01 EUR
1916+0.0092 EUR
2058+0.0086 EUR
2500+0.0079 EUR
Mindestbestellmenge: 112
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MCR18SEQPF6200 MCR18SEQPF6200 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
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MCR18SEQPF6200 MCR18SEQPF6200 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
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MCR01SMQPF6200 MCR01SMQPF6200 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
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MCR01SMQPF6200 MCR01SMQPF6200 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
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HP8JC5TB1 HP8JC5TB1 Rohm Semiconductor hp8jc5tb1-e.pdf Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.84 EUR
Mindestbestellmenge: 2500
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HP8JC5TB1 HP8JC5TB1 Rohm Semiconductor hp8jc5tb1-e.pdf Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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HP8JB5TB1 HP8JB5TB1 Rohm Semiconductor hp8jb5tb1-e.pdf Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
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HP8JB5TB1 HP8JB5TB1 Rohm Semiconductor hp8jb5tb1-e.pdf Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
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DTC144EMHZGT2L DTC144EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTC144EMHZGT2L DTC144EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
143+0.12 EUR
164+0.11 EUR
195+0.091 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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VS64VLNVWMTFTR VS64VLNVWMTFTR Rohm Semiconductor datasheet?p=VS64VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 64VWM 103VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 64V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.16 EUR
10+28.22 EUR
25+26.48 EUR
100+24.57 EUR
250+23.66 EUR
500+23.11 EUR
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SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.41 EUR
10+38.64 EUR
100+38.6 EUR
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
Mindestbestellmenge: 3000
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 5-SSOP
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 25
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Produkt ist nicht verfügbar
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Cut Tape (CT)
Resistance: 2 MOhms
Height - Seated (Max): 0.022" (0.55mm)
auf Bestellung 3 Stücke:
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
14+1.28 EUR
25+1.15 EUR
100+1.02 EUR
250+0.96 EUR
500+0.92 EUR
1000+0.88 EUR
Mindestbestellmenge: 10
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.06 EUR
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
12+1.6 EUR
25+1.45 EUR
100+1.29 EUR
250+1.21 EUR
500+1.16 EUR
1000+1.12 EUR
Mindestbestellmenge: 8
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.81 EUR
Mindestbestellmenge: 3000
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+1.87 EUR
100+1.26 EUR
500+1 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+1.92 EUR
100+1.29 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.18 EUR
100+1.48 EUR
500+1.19 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.19 EUR
10+3.39 EUR
100+2.36 EUR
500+2.04 EUR
Mindestbestellmenge: 4
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Resistance: 2.49 kOhms
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Produkt ist nicht verfügbar
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 2.49 kOhms
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
211+0.083 EUR
250+0.07 EUR
301+0.059 EUR
500+0.051 EUR
1000+0.047 EUR
Mindestbestellmenge: 67
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.05 EUR
Mindestbestellmenge: 5000
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Resistance: 2.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0612
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: Wide 1206 (3216 Metric), 0612
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.75W, 3/4W
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
114+0.15 EUR
144+0.12 EUR
169+0.1 EUR
197+0.09 EUR
250+0.075 EUR
500+0.067 EUR
1000+0.061 EUR
Mindestbestellmenge: 59
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BD10IA5MEFJ-ME2 datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD10IA5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable, Soft Start
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 700 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.01 EUR
25+0.91 EUR
100+0.8 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
Mindestbestellmenge: 13
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.6 EUR
100+1.33 EUR
500+1.06 EUR
1000+1 EUR
Mindestbestellmenge: 8
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.066 EUR
Mindestbestellmenge: 8000
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
141+0.12 EUR
162+0.11 EUR
193+0.092 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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TFZVTR24B datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TFZVTR24B datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2M
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Power - Max: 500 mW
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
83+0.21 EUR
184+0.096 EUR
500+0.095 EUR
1000+0.094 EUR
Mindestbestellmenge: 50
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ESR03EZPF5101 esr03-e.pdf
ESR03EZPF5101
Hersteller: Rohm Semiconductor
Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF5101 esr03-e.pdf
ESR03EZPF5101
Hersteller: Rohm Semiconductor
Description: RES 5.1K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
148+0.12 EUR
188+0.094 EUR
225+0.078 EUR
264+0.067 EUR
320+0.055 EUR
500+0.048 EUR
1000+0.043 EUR
Mindestbestellmenge: 72
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LM324MTX LM358%2C2904%2C324%2C2902%28MX%2CMTX%29.pdf
LM324MTX
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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SDR03EZPF2404 sdr-e.pdf
SDR03EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.035 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPF2404 sdr-e.pdf
SDR03EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
148+0.12 EUR
188+0.094 EUR
223+0.079 EUR
262+0.067 EUR
316+0.056 EUR
500+0.049 EUR
1000+0.044 EUR
Mindestbestellmenge: 72
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SDR10EZPF2404 sdr-e.pdf
SDR10EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPF2404 sdr-e.pdf
SDR10EZPF2404
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 MOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
100+0.18 EUR
125+0.14 EUR
148+0.12 EUR
170+0.1 EUR
250+0.088 EUR
500+0.08 EUR
1000+0.071 EUR
Mindestbestellmenge: 53
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MCR03SEQPF2404 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF2404
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.0075 EUR
10000+0.0071 EUR
15000+0.007 EUR
25000+0.0068 EUR
35000+0.0067 EUR
50000+0.0066 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
MCR03SEQPF2404 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF2404
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
1000+0.018 EUR
1250+0.014 EUR
1563+0.011 EUR
1761+0.01 EUR
1916+0.0092 EUR
2058+0.0086 EUR
2500+0.0079 EUR
Mindestbestellmenge: 112
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ESR03EZPF2404 esr-e.pdf
ESR03EZPF2404
Hersteller: Rohm Semiconductor
Description: RES 2.4M OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPF2404 esr-e.pdf
ESR03EZPF2404
Hersteller: Rohm Semiconductor
Description: RES 2.4M OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 MOhms
auf Bestellung 4955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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MCR01SMQPF2404 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF2404
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
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MCR01SMQPF2404 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF2404
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 MOhms
Produkt ist nicht verfügbar
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SFR01MZPJ242 sfr-e.pdf
SFR01MZPJ242
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0402 CA
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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MCR03SEQPF6200 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF6200
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 620 Ohms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.0075 EUR
10000+0.0071 EUR
15000+0.007 EUR
25000+0.0068 EUR
35000+0.0067 EUR
50000+0.0066 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
MCR03SEQPF6200 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF6200
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 620 Ohms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
1000+0.018 EUR
1250+0.014 EUR
1563+0.011 EUR
1761+0.01 EUR
1916+0.0092 EUR
2058+0.0086 EUR
2500+0.0079 EUR
Mindestbestellmenge: 112
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MCR18SEQPF6200 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF6200
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCR18SEQPF6200 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF6200
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCR01SMQPF6200 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF6200
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCR01SMQPF6200 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF6200
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 Ohms
Produkt ist nicht verfügbar
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HP8JC5TB1 hp8jc5tb1-e.pdf
HP8JC5TB1
Hersteller: Rohm Semiconductor
Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
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HP8JC5TB1 hp8jc5tb1-e.pdf
HP8JC5TB1
Hersteller: Rohm Semiconductor
Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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HP8JB5TB1 hp8jb5tb1-e.pdf
HP8JB5TB1
Hersteller: Rohm Semiconductor
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8JB5TB1 hp8jb5tb1-e.pdf
HP8JB5TB1
Hersteller: Rohm Semiconductor
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DTC144EMHZGT2L VMT3.jpg
DTC144EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTC144EMHZGT2L VMT3.jpg
DTC144EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
164+0.11 EUR
195+0.091 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
VS64VLNVWMTFTR datasheet?p=VS64VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS64VLNVWMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 64VWM 103VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 64V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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