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ESR18EZPF1201 ESR18EZPF1201 Rohm Semiconductor esr-e.pdf Description: RES 1.2K OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
Produkt ist nicht verfügbar
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ESR18EZPF1201 ESR18EZPF1201 Rohm Semiconductor esr-e.pdf Description: RES 1.2K OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
auf Bestellung 4070 Stücke:
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72+0.25 EUR
143+0.12 EUR
182+0.097 EUR
216+0.082 EUR
262+0.067 EUR
310+0.057 EUR
500+0.051 EUR
1000+0.046 EUR
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SFR18EZPF1201 SFR18EZPF1201 Rohm Semiconductor sfr-e.pdf Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
Produkt ist nicht verfügbar
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SFR18EZPF1201 SFR18EZPF1201 Rohm Semiconductor sfr-e.pdf Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
auf Bestellung 3885 Stücke:
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56+0.32 EUR
109+0.16 EUR
137+0.13 EUR
160+0.11 EUR
185+0.095 EUR
250+0.08 EUR
500+0.073 EUR
1000+0.065 EUR
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DTC143ZMHZGT2L DTC143ZMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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DTC143ZMHZGT2L DTC143ZMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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100+0.18 EUR
143+0.12 EUR
165+0.11 EUR
196+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
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BD9615MUV-EVK-002 BD9615MUV-EVK-002 Rohm Semiconductor bd9615muv-evk-002.jpg Description: EVAL BOARD FOR BD9615
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 8V ~ 18V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 416kHz
Regulator Topology: Boost
Utilized IC / Part: BD9615
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
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RF7G120BJFRATCR RF7G120BJFRATCR Rohm Semiconductor datasheet?p=RF7G120BJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RF7G120BJFRATCR RF7G120BJFRATCR Rohm Semiconductor datasheet?p=RF7G120BJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 605 Stücke:
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13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
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AG142FGS4FRATCB AG142FGS4FRATCB Rohm Semiconductor datasheet?p=AG142FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+1.09 EUR
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AG142FGS4FRATCB AG142FGS4FRATCB Rohm Semiconductor datasheet?p=AG142FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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8+2.22 EUR
11+1.61 EUR
25+1.47 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.13 EUR
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AG052FPS4FRATCB AG052FPS4FRATCB Rohm Semiconductor ag052fps4fratcb-e.pdf Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
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AG052FPS4FRATCB AG052FPS4FRATCB Rohm Semiconductor ag052fps4fratcb-e.pdf Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2855 Stücke:
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5+3.54 EUR
10+2.27 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
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AG140FGS4FRATCB AG140FGS4FRATCB Rohm Semiconductor datasheet?p=AG140FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG140FGS4FRATCB AG140FGS4FRATCB Rohm Semiconductor datasheet?p=AG140FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1985 Stücke:
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10+2.85 EUR
25+2.6 EUR
100+2.33 EUR
250+2.2 EUR
500+2.13 EUR
1000+2.06 EUR
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AG045FLS4FRATCB AG045FLS4FRATCB Rohm Semiconductor datasheet?p=AG045FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
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AG045FLS4FRATCB AG045FLS4FRATCB Rohm Semiconductor datasheet?p=AG045FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
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5+3.85 EUR
10+2.86 EUR
25+2.61 EUR
100+2.34 EUR
250+2.21 EUR
500+2.14 EUR
1000+2.07 EUR
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AG040FGS4FRATCB AG040FGS4FRATCB Rohm Semiconductor ag040fgs4fratcb-e.pdf Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
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AG040FGS4FRATCB AG040FGS4FRATCB Rohm Semiconductor ag040fgs4fratcb-e.pdf Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2353 Stücke:
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4+5.42 EUR
10+3.54 EUR
100+2.47 EUR
500+2.16 EUR
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BH7881EFV-E2 BH7881EFV-E2 Rohm Semiconductor datasheet?p=BH7881EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
Produkt ist nicht verfügbar
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MCH155A010CK Rohm Semiconductor mch15.pdf Description: CAP CER 1PF 50V C0G/NP0 0402
Tolerance: ±0.25pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
Produkt ist nicht verfügbar
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DTC123EMHZGT2L DTC123EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.065 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
DTC123EMHZGT2L DTC123EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
145+0.12 EUR
166+0.11 EUR
197+0.089 EUR
250+0.081 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
DTC123JMHZGT2L DTC123JMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.065 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
DTC123JMHZGT2L DTC123JMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
145+0.12 EUR
166+0.11 EUR
197+0.089 EUR
250+0.081 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF3902 SFR01MZPF3902 Rohm Semiconductor sfr-e.pdf Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF3902 SFR01MZPF3902 Rohm Semiconductor sfr-e.pdf Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
auf Bestellung 7793 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
179+0.099 EUR
230+0.077 EUR
275+0.064 EUR
327+0.054 EUR
396+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ330 LTR100JZPJ330 Rohm Semiconductor ltr-e.pdf Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ330 LTR100JZPJ330 Rohm Semiconductor ltr-e.pdf Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
34+0.52 EUR
40+0.44 EUR
50+0.39 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPJ470 SDR10EZPJ470 Rohm Semiconductor sdr-e.pdf Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPJ470 SDR10EZPJ470 Rohm Semiconductor sdr-e.pdf Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
121+0.15 EUR
152+0.12 EUR
179+0.099 EUR
215+0.082 EUR
250+0.071 EUR
500+0.063 EUR
1000+0.057 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
ESR18EZPF24R0 ESR18EZPF24R0 Rohm Semiconductor esr-e.pdf Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR18EZPF24R0 ESR18EZPF24R0 Rohm Semiconductor esr-e.pdf Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
143+0.12 EUR
182+0.097 EUR
216+0.082 EUR
262+0.067 EUR
310+0.057 EUR
500+0.051 EUR
1000+0.046 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SFR18EZPF3902 SFR18EZPF3902 Rohm Semiconductor sfr-e.pdf Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.055 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SFR18EZPF3902 SFR18EZPF3902 Rohm Semiconductor sfr-e.pdf Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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ESR01MZPF6203 ESR01MZPF6203 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR01MZPF6203 ESR01MZPF6203 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 8790 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
91+0.2 EUR
112+0.16 EUR
130+0.14 EUR
150+0.12 EUR
250+0.1 EUR
500+0.09 EUR
1000+0.082 EUR
5000+0.07 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ624 SFR01MZPJ624 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ624 SFR01MZPJ624 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
209+0.084 EUR
269+0.065 EUR
325+0.054 EUR
387+0.046 EUR
476+0.037 EUR
560+0.031 EUR
1000+0.027 EUR
5000+0.022 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF6202 SFR01MZPF6202 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF6202 SFR01MZPF6202 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9966 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
179+0.099 EUR
232+0.076 EUR
277+0.064 EUR
326+0.054 EUR
398+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF6201 SFR01MZPF6201 Rohm Semiconductor sfr-e.pdf Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPF6201 SFR01MZPF6201 Rohm Semiconductor sfr-e.pdf Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
179+0.099 EUR
232+0.076 EUR
277+0.064 EUR
326+0.054 EUR
398+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
ESR01MZPF6202 ESR01MZPF6202 Rohm Semiconductor esr-e.pdf Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR01MZPF6202 ESR01MZPF6202 Rohm Semiconductor esr-e.pdf Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
91+0.2 EUR
112+0.16 EUR
130+0.14 EUR
150+0.12 EUR
250+0.1 EUR
500+0.09 EUR
1000+0.082 EUR
5000+0.07 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
ESR01MZPF6201 ESR01MZPF6201 Rohm Semiconductor esr-e.pdf Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.048 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
ESR01MZPF6201 ESR01MZPF6201 Rohm Semiconductor esr-e.pdf Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DTA013ZUBTL DTA013ZUBTL Rohm Semiconductor datasheet?p=DTA013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.068 EUR
Mindestbestellmenge: 3000
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DTA013ZUBTL DTA013ZUBTL Rohm Semiconductor datasheet?p=DTA013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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50+0.35 EUR
85+0.21 EUR
138+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
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BM65374S-VC BM65374S-VC Rohm Semiconductor Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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BM65374S-VA BM65374S-VA Rohm Semiconductor Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
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BM65375S-VA BM65375S-VA Rohm Semiconductor Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
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BM65375S-VC BM65375S-VC Rohm Semiconductor Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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PBZLTBR1130 PBZLTBR1130 Rohm Semiconductor datasheet?p=PBZL130&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
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PBZLTBR1130 PBZLTBR1130 Rohm Semiconductor datasheet?p=PBZL130&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
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16+1.13 EUR
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DTC143EMHZGT2L DTC143EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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DTC143EMHZGT2L DTC143EMHZGT2L Rohm Semiconductor VMT3.jpg Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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38+0.48 EUR
60+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
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DTC114TUBTL DTC114TUBTL Rohm Semiconductor datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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DTC114TUBTL DTC114TUBTL Rohm Semiconductor datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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105+0.17 EUR
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500+0.076 EUR
1000+0.067 EUR
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RV7L020GNTCR1 RV7L020GNTCR1 Rohm Semiconductor datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
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ESR18EZPF1201 esr-e.pdf
ESR18EZPF1201
Hersteller: Rohm Semiconductor
Description: RES 1.2K OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
Produkt ist nicht verfügbar
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ESR18EZPF1201 esr-e.pdf
ESR18EZPF1201
Hersteller: Rohm Semiconductor
Description: RES 1.2K OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
auf Bestellung 4070 Stücke:
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Anzahl Preis
72+0.25 EUR
143+0.12 EUR
182+0.097 EUR
216+0.082 EUR
262+0.067 EUR
310+0.057 EUR
500+0.051 EUR
1000+0.046 EUR
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SFR18EZPF1201 sfr-e.pdf
SFR18EZPF1201
Hersteller: Rohm Semiconductor
Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
Produkt ist nicht verfügbar
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SFR18EZPF1201 sfr-e.pdf
SFR18EZPF1201
Hersteller: Rohm Semiconductor
Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
auf Bestellung 3885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
109+0.16 EUR
137+0.13 EUR
160+0.11 EUR
185+0.095 EUR
250+0.08 EUR
500+0.073 EUR
1000+0.065 EUR
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DTC143ZMHZGT2L VMT3.jpg
DTC143ZMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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Anzahl Preis
8000+0.065 EUR
Mindestbestellmenge: 8000
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DTC143ZMHZGT2L VMT3.jpg
DTC143ZMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
165+0.11 EUR
196+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
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BD9615MUV-EVK-002 bd9615muv-evk-002.jpg
BD9615MUV-EVK-002
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD9615
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 8V ~ 18V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 416kHz
Regulator Topology: Boost
Utilized IC / Part: BD9615
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
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1+203.23 EUR
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RF7G120BJFRATCR datasheet?p=RF7G120BJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RF7G120BJFRATCR
Hersteller: Rohm Semiconductor
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
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RF7G120BJFRATCR datasheet?p=RF7G120BJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RF7G120BJFRATCR
Hersteller: Rohm Semiconductor
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 605 Stücke:
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Anzahl Preis
8+2.24 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
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AG142FGS4FRATCB datasheet?p=AG142FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG142FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
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Anzahl Preis
3000+1.09 EUR
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AG142FGS4FRATCB datasheet?p=AG142FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG142FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
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Anzahl Preis
8+2.22 EUR
11+1.61 EUR
25+1.47 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.13 EUR
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AG052FPS4FRATCB ag052fps4fratcb-e.pdf
AG052FPS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG052FPS4FRATCB ag052fps4fratcb-e.pdf
AG052FPS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2855 Stücke:
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Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
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AG140FGS4FRATCB datasheet?p=AG140FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG140FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG140FGS4FRATCB datasheet?p=AG140FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG140FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+2.85 EUR
25+2.6 EUR
100+2.33 EUR
250+2.2 EUR
500+2.13 EUR
1000+2.06 EUR
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AG045FLS4FRATCB datasheet?p=AG045FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG045FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG045FLS4FRATCB datasheet?p=AG045FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG045FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.86 EUR
25+2.61 EUR
100+2.34 EUR
250+2.21 EUR
500+2.14 EUR
1000+2.07 EUR
Mindestbestellmenge: 5
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AG040FGS4FRATCB ag040fgs4fratcb-e.pdf
AG040FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG040FGS4FRATCB ag040fgs4fratcb-e.pdf
AG040FGS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+3.54 EUR
100+2.47 EUR
500+2.16 EUR
Mindestbestellmenge: 4
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BH7881EFV-E2 datasheet?p=BH7881EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH7881EFV-E2
Hersteller: Rohm Semiconductor
Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
Produkt ist nicht verfügbar
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MCH155A010CK mch15.pdf
Hersteller: Rohm Semiconductor
Description: CAP CER 1PF 50V C0G/NP0 0402
Tolerance: ±0.25pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
Produkt ist nicht verfügbar
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DTC123EMHZGT2L VMT3.jpg
DTC123EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.065 EUR
Mindestbestellmenge: 8000
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DTC123EMHZGT2L VMT3.jpg
DTC123EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
145+0.12 EUR
166+0.11 EUR
197+0.089 EUR
250+0.081 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
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DTC123JMHZGT2L VMT3.jpg
DTC123JMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.065 EUR
Mindestbestellmenge: 8000
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DTC123JMHZGT2L VMT3.jpg
DTC123JMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
145+0.12 EUR
166+0.11 EUR
197+0.089 EUR
250+0.081 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
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SFR01MZPF3902 sfr-e.pdf
SFR01MZPF3902
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF3902 sfr-e.pdf
SFR01MZPF3902
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
auf Bestellung 7793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
179+0.099 EUR
230+0.077 EUR
275+0.064 EUR
327+0.054 EUR
396+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
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LTR100JZPJ330 ltr-e.pdf
LTR100JZPJ330
Hersteller: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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LTR100JZPJ330 ltr-e.pdf
LTR100JZPJ330
Hersteller: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
34+0.52 EUR
40+0.44 EUR
50+0.39 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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SDR10EZPJ470 sdr-e.pdf
SDR10EZPJ470
Hersteller: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Produkt ist nicht verfügbar
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SDR10EZPJ470 sdr-e.pdf
SDR10EZPJ470
Hersteller: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
121+0.15 EUR
152+0.12 EUR
179+0.099 EUR
215+0.082 EUR
250+0.071 EUR
500+0.063 EUR
1000+0.057 EUR
Mindestbestellmenge: 63
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ESR18EZPF24R0 esr-e.pdf
ESR18EZPF24R0
Hersteller: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Produkt ist nicht verfügbar
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ESR18EZPF24R0 esr-e.pdf
ESR18EZPF24R0
Hersteller: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
143+0.12 EUR
182+0.097 EUR
216+0.082 EUR
262+0.067 EUR
310+0.057 EUR
500+0.051 EUR
1000+0.046 EUR
Mindestbestellmenge: 72
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SFR18EZPF3902 sfr-e.pdf
SFR18EZPF3902
Hersteller: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.055 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SFR18EZPF3902 sfr-e.pdf
SFR18EZPF3902
Hersteller: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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ESR01MZPF6203 datasheet?p=ESR01MZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ESR01MZPF6203
Hersteller: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF6203 datasheet?p=ESR01MZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ESR01MZPF6203
Hersteller: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 8790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
91+0.2 EUR
112+0.16 EUR
130+0.14 EUR
150+0.12 EUR
250+0.1 EUR
500+0.09 EUR
1000+0.082 EUR
5000+0.07 EUR
Mindestbestellmenge: 48
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SFR01MZPJ624 sfr-e.pdf
SFR01MZPJ624
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
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SFR01MZPJ624 sfr-e.pdf
SFR01MZPJ624
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
209+0.084 EUR
269+0.065 EUR
325+0.054 EUR
387+0.046 EUR
476+0.037 EUR
560+0.031 EUR
1000+0.027 EUR
5000+0.022 EUR
Mindestbestellmenge: 100
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SFR01MZPF6202 sfr-e.pdf
SFR01MZPF6202
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF6202 sfr-e.pdf
SFR01MZPF6202
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
179+0.099 EUR
232+0.076 EUR
277+0.064 EUR
326+0.054 EUR
398+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
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SFR01MZPF6201 sfr-e.pdf
SFR01MZPF6201
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF6201 sfr-e.pdf
SFR01MZPF6201
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
179+0.099 EUR
232+0.076 EUR
277+0.064 EUR
326+0.054 EUR
398+0.044 EUR
500+0.039 EUR
1000+0.034 EUR
5000+0.027 EUR
Mindestbestellmenge: 84
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ESR01MZPF6202 esr-e.pdf
ESR01MZPF6202
Hersteller: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF6202 esr-e.pdf
ESR01MZPF6202
Hersteller: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
91+0.2 EUR
112+0.16 EUR
130+0.14 EUR
150+0.12 EUR
250+0.1 EUR
500+0.09 EUR
1000+0.082 EUR
5000+0.07 EUR
Mindestbestellmenge: 48
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ESR01MZPF6201 esr-e.pdf
ESR01MZPF6201
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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ESR01MZPF6201 esr-e.pdf
ESR01MZPF6201
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
Mindestbestellmenge: 42
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DTA013ZUBTL datasheet?p=DTA013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA013ZUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.068 EUR
Mindestbestellmenge: 3000
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DTA013ZUBTL datasheet?p=DTA013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA013ZUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
85+0.21 EUR
138+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 50
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BM65374S-VC
BM65374S-VC
Hersteller: Rohm Semiconductor
Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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BM65374S-VA
BM65374S-VA
Hersteller: Rohm Semiconductor
Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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BM65375S-VA
BM65375S-VA
Hersteller: Rohm Semiconductor
Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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BM65375S-VC
BM65375S-VC
Hersteller: Rohm Semiconductor
Description: 600V MOSFET (PRESTOMOS) INTELLIG
Packaging: Tube
Produkt ist nicht verfügbar
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PBZLTBR1130 datasheet?p=PBZL130&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
PBZLTBR1130
Hersteller: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
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PBZLTBR1130 datasheet?p=PBZL130&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
PBZLTBR1130
Hersteller: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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DTC143EMHZGT2L VMT3.jpg
DTC143EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.086 EUR
Mindestbestellmenge: 8000
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DTC143EMHZGT2L VMT3.jpg
DTC143EMHZGT2L
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
60+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 38
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DTC114TUBTL datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.055 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DTC114TUBTL datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
170+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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RV7L020GNTCR1 datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RV7L020GNTCR1
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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