Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (101793) > Seite 1080 nach 1697
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GNP2070TD-ZTR | Rohm Semiconductor |
Description: ECOGAN?, 650V 27A TOLL-8N, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
auf Bestellung 1616 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6P100BGTB1 | Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSFPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6P100BGTB1 | Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSFPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLR2371YG-CTR | Rohm Semiconductor |
Description: TLR; SERIES, AUTOMOTIVE LOW NOISPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1.13mA Slew Rate: 3V/µs Gain Bandwidth Product: 5 MHz Current - Input Bias: 2.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 22 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLR2371YG-CTR | Rohm Semiconductor |
Description: TLR; SERIES, AUTOMOTIVE LOW NOISPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1.13mA Slew Rate: 3V/µs Gain Bandwidth Product: 5 MHz Current - Input Bias: 2.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 22 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 2967 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4065DWATL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4065DWATL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4090KWATL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4090KWATL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4065DWAHRTL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SCT4065DWAHRTL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4090KWAHRTL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SCT4090KWAHRTL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036DWATL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036DWATL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036DWAHRTL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036DWAHRTL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036KWATL | Rohm Semiconductor |
Description: 1200V, 40A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SCT4036KWATL | Rohm Semiconductor |
Description: 1200V, 40A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4018KWATL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4018KWATL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RS7P200BMTB1 | Rohm Semiconductor |
Description: NCH 100V 200A, DFN5060-8S, WIDE-Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DFN5060-8S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RS7P200BMTB1 | Rohm Semiconductor |
Description: NCH 100V 200A, DFN5060-8S, WIDE-Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DFN5060-8S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V |
auf Bestellung 1082 Stücke: Lieferzeit 10-14 Tag (e) |
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GMR50HJBFGR018 | Rohm Semiconductor |
Description: RES 18M OHM 1% 4W 2010Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: 2010 (5025 Metric) Temperature Coefficient: ±25ppm/°C Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Composition: Metal Element Operating Temperature: -65°C ~ 170°C Number of Terminations: 2 Supplier Device Package: 2010 Height - Seated (Max): 0.022" (0.55mm) Resistance: 18 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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GMR50HJBFGR018 | Rohm Semiconductor |
Description: RES 18M OHM 1% 4W 2010Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: 2010 (5025 Metric) Temperature Coefficient: ±25ppm/°C Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Composition: Metal Element Operating Temperature: -65°C ~ 170°C Number of Terminations: 2 Supplier Device Package: 2010 Height - Seated (Max): 0.022" (0.55mm) Resistance: 18 mOhms |
auf Bestellung 1988 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR18EZPF91R0 | Rohm Semiconductor |
Description: RES 91 OHM 1% 3/4W 1206Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 91 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ESR18EZPF91R0 | Rohm Semiconductor |
Description: RES 91 OHM 1% 3/4W 1206Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 91 Ohms |
auf Bestellung 2686 Stücke: Lieferzeit 10-14 Tag (e) |
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BST91B1P4K01-VC | Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,Packaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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BST91T1P4K01-VC | Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, 3-PHASE-BRIDPackaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSL0402WBN1W | Rohm Semiconductor |
Description: LED INDICATION SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BD521VNVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 0.965V, ADJUSTABLEPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 0.965V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD521VNVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 0.965V, ADJUSTABLEPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 0.965V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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BU31TD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LIN 3.1V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 3.1V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.46V @ 200mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU31TD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LIN 3.1V 200MA 4SSONPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 3.1V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.46V @ 200mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU1BTD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LINEAR 1.15V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 1.15V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.1V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BU2JTD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LTR18EZPD47R0 | Rohm Semiconductor |
Description: WIDE TERMINAL RES 1206, 0,5%Power (Watts): 0.75W, 3/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Resistance: 47 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MCH155A8R2DK | Rohm Semiconductor |
Description: CAP CER 8.2PF 50V C0G/NP0 0402Tolerance: ±0.5pF Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.022" (0.55mm) Capacitance: 8.2 pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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UMZ6.8NFMT106 | Rohm Semiconductor |
Description: 5V, 200MW, HIGHLY RELIABLE, TRANPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMZ6.8NFMT106 | Rohm Semiconductor |
Description: 5V, 200MW, HIGHLY RELIABLE, TRANPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMZ6.8NFMFHT106 | Rohm Semiconductor |
Description: 5V, 200MW, AUTOMOTIVE TRANSIENTPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMZ6.8NFMFHT106 | Rohm Semiconductor |
Description: 5V, 200MW, AUTOMOTIVE TRANSIENTPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM358DR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 600µA Slew Rate: 0.3V/µs Gain Bandwidth Product: 700 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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LM358DR | Rohm Semiconductor |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 600µA Slew Rate: 0.3V/µs Gain Bandwidth Product: 700 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
auf Bestellung 2786 Stücke: Lieferzeit 10-14 Tag (e) |
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RN141GT2R | ROHM Semiconductor |
PIN Diodes 50V; 100mA PIN Diode |
auf Bestellung 7920 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RN779DT146 | ROHM Semiconductor |
PIN Diodes DIODE PIN 50V 50MA |
auf Bestellung 2831 Stücke: Lieferzeit 10-14 Tag (e) |
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RN142ZST2R | ROHM Semiconductor |
PIN Diodes 30V Vr 50mA 1V Vf 0.1uA Ir -55-150 C |
auf Bestellung 13620 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1SS356TW11 | ROHM Semiconductor |
PIN Diodes SW 35V 100MA |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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RN731VTE-17 | ROHM Semiconductor |
PIN Diodes HIGH FREQUENCY PIN (SOD-323) |
auf Bestellung 1576 Stücke: Lieferzeit 10-14 Tag (e) |
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RN739FT106 | ROHM Semiconductor |
PIN Diodes HIGH FREQUENCY PIN (SOT-323) |
auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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DAN235UT106 | ROHM Semiconductor |
PIN Diodes SWITCH BAND 35V |
auf Bestellung 2160 Stücke: Lieferzeit 10-14 Tag (e) |
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RN141STE61 | ROHM Semiconductor |
PIN Diodes DIODE PIN SWITCH 50V 2PIN EMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RN142GT2R | ROHM Semiconductor |
PIN Diodes HIGH FREQUENCY |
auf Bestellung 7828 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DAN235ETL | ROHM Semiconductor |
PIN Diodes SWITCH BAND 35V |
auf Bestellung 3104 Stücke: Lieferzeit 10-14 Tag (e) |
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RN771VTE-17 | ROHM Semiconductor |
PIN Diodes DIODE PIN SWITCH 50V 2PIN UMD |
auf Bestellung 3381 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN731KTL | ROHM Semiconductor | PIN Diodes DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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RN779FT106 | ROHM Semiconductor |
PIN Diodes DIODE PIN SWITCH 50V 3PIN UMD |
auf Bestellung 2930 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN739DT146 | ROHM Semiconductor |
PIN Diodes HIGH FREQUENCY |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS390TE61 | ROHM Semiconductor |
PIN Diodes SW 35V 100MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RN142STE61 | ROHM Semiconductor |
PIN Diodes HIGH FREQUENCY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GNP2070TD-ZTR |
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Hersteller: Rohm Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.99 EUR |
| 10+ | 13.93 EUR |
| 100+ | 11.27 EUR |
| RS6P100BGTB1 |
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Hersteller: Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.57 EUR |
| RS6P100BGTB1 |
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Hersteller: Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.09 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.82 EUR |
| TLR2371YG-CTR |
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Hersteller: Rohm Semiconductor
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLR2371YG-CTR |
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Hersteller: Rohm Semiconductor
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.95 EUR |
| 25+ | 0.85 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.65 EUR |
| SCT4065DWATL |
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Hersteller: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 5.6 EUR |
| SCT4065DWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.68 EUR |
| 10+ | 9.33 EUR |
| 100+ | 6.88 EUR |
| 500+ | 6.85 EUR |
| SCT4090KWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 5.72 EUR |
| SCT4090KWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.9 EUR |
| 10+ | 9.5 EUR |
| 100+ | 7.01 EUR |
| SCT4065DWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4065DWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.01 EUR |
| 10+ | 9.56 EUR |
| 100+ | 7.06 EUR |
| SCT4090KWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4090KWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.24 EUR |
| 10+ | 9.73 EUR |
| 100+ | 7.22 EUR |
| SCT4036DWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 8.2 EUR |
| SCT4036DWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.29 EUR |
| 10+ | 12.68 EUR |
| 100+ | 10.04 EUR |
| SCT4036DWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 8.45 EUR |
| SCT4036DWAHRTL |
![]() |
Hersteller: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.73 EUR |
| 10+ | 13 EUR |
| 100+ | 10.35 EUR |
| SCT4036KWATL |
![]() |
Hersteller: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4036KWATL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 24.11 EUR |
| 10+ | 16.99 EUR |
| 100+ | 14.37 EUR |
| SCT4018KWATL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 23.68 EUR |
| SCT4018KWATL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 41.73 EUR |
| 10+ | 30.36 EUR |
| 100+ | 28.99 EUR |
| RS7P200BMTB1 |
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Hersteller: Rohm Semiconductor
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS7P200BMTB1 |
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Hersteller: Rohm Semiconductor
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.03 EUR |
| 10+ | 5.34 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.37 EUR |
| GMR50HJBFGR018 |
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Hersteller: Rohm Semiconductor
Description: RES 18M OHM 1% 4W 2010
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
Description: RES 18M OHM 1% 4W 2010
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GMR50HJBFGR018 |
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Hersteller: Rohm Semiconductor
Description: RES 18M OHM 1% 4W 2010
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
Description: RES 18M OHM 1% 4W 2010
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.95 EUR |
| 25+ | 1.68 EUR |
| 50+ | 1.51 EUR |
| 100+ | 1.37 EUR |
| 250+ | 1.21 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.03 EUR |
| ESR18EZPF91R0 |
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Hersteller: Rohm Semiconductor
Description: RES 91 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
Description: RES 91 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESR18EZPF91R0 |
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Hersteller: Rohm Semiconductor
Description: RES 91 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
Description: RES 91 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 134+ | 0.13 EUR |
| 172+ | 0.1 EUR |
| 203+ | 0.087 EUR |
| 237+ | 0.074 EUR |
| 286+ | 0.062 EUR |
| 500+ | 0.054 EUR |
| 1000+ | 0.049 EUR |
| BST91B1P4K01-VC |
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Hersteller: Rohm Semiconductor
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 144.65 EUR |
| BST91T1P4K01-VC |
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Hersteller: Rohm Semiconductor
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD521VNVX-2CTL |
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Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD521VNVX-2CTL |
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Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 31+ | 0.58 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.38 EUR |
| BU31TD2WNVX-TL |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.39 EUR |
| BU31TD2WNVX-TL |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 29+ | 0.63 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.49 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.41 EUR |
| BU1BTD2WNVX-TL |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.15V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 1.15V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU2JTD2WNVX-TL |
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Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 2.85V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LTR18EZPD47R0 |
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Hersteller: Rohm Semiconductor
Description: WIDE TERMINAL RES 1206, 0,5%
Power (Watts): 0.75W, 3/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 47 Ohms
Description: WIDE TERMINAL RES 1206, 0,5%
Power (Watts): 0.75W, 3/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 47 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCH155A8R2DK |
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Hersteller: Rohm Semiconductor
Description: CAP CER 8.2PF 50V C0G/NP0 0402
Tolerance: ±0.5pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 8.2 pF
Description: CAP CER 8.2PF 50V C0G/NP0 0402
Tolerance: ±0.5pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 8.2 pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UMZ6.8NFMT106 |
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Hersteller: Rohm Semiconductor
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| UMZ6.8NFMT106 |
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Hersteller: Rohm Semiconductor
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| UMZ6.8NFMFHT106 |
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Hersteller: Rohm Semiconductor
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| UMZ6.8NFMFHT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| LM358DR | ![]() |
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Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| LM358DR | ![]() |
![]() |
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 600µA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 25+ | 0.72 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| RN141GT2R |
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Hersteller: ROHM Semiconductor
PIN Diodes 50V; 100mA PIN Diode
PIN Diodes 50V; 100mA PIN Diode
auf Bestellung 7920 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RN779DT146 |
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Hersteller: ROHM Semiconductor
PIN Diodes DIODE PIN 50V 50MA
PIN Diodes DIODE PIN 50V 50MA
auf Bestellung 2831 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.25 EUR |
| 9000+ | 0.21 EUR |
| RN142ZST2R |
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Hersteller: ROHM Semiconductor
PIN Diodes 30V Vr 50mA 1V Vf 0.1uA Ir -55-150 C
PIN Diodes 30V Vr 50mA 1V Vf 0.1uA Ir -55-150 C
auf Bestellung 13620 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 1SS356TW11 |
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Hersteller: ROHM Semiconductor
PIN Diodes SW 35V 100MA
PIN Diodes SW 35V 100MA
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| RN731VTE-17 |
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Hersteller: ROHM Semiconductor
PIN Diodes HIGH FREQUENCY PIN (SOD-323)
PIN Diodes HIGH FREQUENCY PIN (SOD-323)
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 0.4 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
| RN739FT106 |
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Hersteller: ROHM Semiconductor
PIN Diodes HIGH FREQUENCY PIN (SOT-323)
PIN Diodes HIGH FREQUENCY PIN (SOT-323)
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.33 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.26 EUR |
| DAN235UT106 |
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Hersteller: ROHM Semiconductor
PIN Diodes SWITCH BAND 35V
PIN Diodes SWITCH BAND 35V
auf Bestellung 2160 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 0.35 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| RN141STE61 |
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Hersteller: ROHM Semiconductor
PIN Diodes DIODE PIN SWITCH 50V 2PIN EMD
PIN Diodes DIODE PIN SWITCH 50V 2PIN EMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN142GT2R |
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Hersteller: ROHM Semiconductor
PIN Diodes HIGH FREQUENCY
PIN Diodes HIGH FREQUENCY
auf Bestellung 7828 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DAN235ETL |
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Hersteller: ROHM Semiconductor
PIN Diodes SWITCH BAND 35V
PIN Diodes SWITCH BAND 35V
auf Bestellung 3104 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 0.32 EUR |
| 15+ | 0.19 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| RN771VTE-17 |
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Hersteller: ROHM Semiconductor
PIN Diodes DIODE PIN SWITCH 50V 2PIN UMD
PIN Diodes DIODE PIN SWITCH 50V 2PIN UMD
auf Bestellung 3381 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 0.43 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| RN731KTL |
Hersteller: ROHM Semiconductor
PIN Diodes DIODE
PIN Diodes DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN779FT106 |
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Hersteller: ROHM Semiconductor
PIN Diodes DIODE PIN SWITCH 50V 3PIN UMD
PIN Diodes DIODE PIN SWITCH 50V 3PIN UMD
auf Bestellung 2930 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.57 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| RN739DT146 |
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Hersteller: ROHM Semiconductor
PIN Diodes HIGH FREQUENCY
PIN Diodes HIGH FREQUENCY
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 1SS390TE61 |
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Hersteller: ROHM Semiconductor
PIN Diodes SW 35V 100MA
PIN Diodes SW 35V 100MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RN142STE61 |
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Hersteller: ROHM Semiconductor
PIN Diodes HIGH FREQUENCY
PIN Diodes HIGH FREQUENCY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
















