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RV7L020GNTCR1 RV7L020GNTCR1 Rohm Semiconductor datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
auf Bestellung 1850 Stücke:
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23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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LM2902EYFV-CE2 LM2902EYFV-CE2 Rohm Semiconductor datasheet?p=LM2902EYFV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2902EYFV-CE2 LM2902EYFV-CE2 Rohm Semiconductor datasheet?p=LM2902EYFV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 1930 Stücke:
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RX2P06BBHC7G RX2P06BBHC7G Rohm Semiconductor rx2p06bbhc7g-e.pdf Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
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RD3P07BBHTL1 RD3P07BBHTL1 Rohm Semiconductor rd3p07bbhtl1-e.pdf Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Produkt ist nicht verfügbar
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RD3P07BBHTL1 RD3P07BBHTL1 Rohm Semiconductor rd3p07bbhtl1-e.pdf Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 2488 Stücke:
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MCR03SEQPF5102 MCR03SEQPF5102 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
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MCR03SEQPF5102 MCR03SEQPF5102 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 99671 Stücke:
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1112+0.016 EUR
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1588+0.011 EUR
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2075+0.0085 EUR
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MCR01SMQPF5102 MCR01SMQPF5102 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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MCR01SMQPF5102 MCR01SMQPF5102 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF5102 SFR01MZPF5102 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RES 0402 CA
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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RB532HS-30T15R RB532HS-30T15R Rohm Semiconductor datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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RB532HS-30T15R RB532HS-30T15R Rohm Semiconductor datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2444 Stücke:
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500+0.15 EUR
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RB058RSM20STL1 RB058RSM20STL1 Rohm Semiconductor datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Produkt ist nicht verfügbar
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RB058RSM20STL1 RB058RSM20STL1 Rohm Semiconductor datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
auf Bestellung 2500 Stücke:
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RB058RSM20STFTL1 RB058RSM20STFTL1 Rohm Semiconductor datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
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RB058RSM20STFTL1 RB058RSM20STFTL1 Rohm Semiconductor datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
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RB038RSM20STL1 RB038RSM20STL1 Rohm Semiconductor rb038rsm20stl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB038RSM20STL1 RB038RSM20STL1 Rohm Semiconductor rb038rsm20stl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB098RSM20STL1 RB098RSM20STL1 Rohm Semiconductor rb098rsm20stl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB098RSM20STL1 RB098RSM20STL1 Rohm Semiconductor rb098rsm20stl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB048RSM20STL1 RB048RSM20STL1 Rohm Semiconductor rb048rsm20stl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
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4000+0.78 EUR
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RB048RSM20STL1 RB048RSM20STL1 Rohm Semiconductor rb048rsm20stl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
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500+0.99 EUR
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RB088RSM20STL1 RB088RSM20STL1 Rohm Semiconductor rb088rsm20stl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
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RB088RSM20STL1 RB088RSM20STL1 Rohm Semiconductor rb088rsm20stl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STL1 RB028RSM20STL1 Rohm Semiconductor rb028rsm20stl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.79 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STL1 RB028RSM20STL1 Rohm Semiconductor rb028rsm20stl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB038RSM20STFTL1 RB038RSM20STFTL1 Rohm Semiconductor rb038rsm20stftl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.83 EUR
Mindestbestellmenge: 4000
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RB038RSM20STFTL1 RB038RSM20STFTL1 Rohm Semiconductor rb038rsm20stftl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STFTL1 RB098RSM20STFTL1 Rohm Semiconductor rb098rsm20stftl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STFTL1 RB098RSM20STFTL1 Rohm Semiconductor rb098rsm20stftl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STFTL1 RB048RSM20STFTL1 Rohm Semiconductor rb048rsm20stftl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
4000+0.92 EUR
Mindestbestellmenge: 4000
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RB048RSM20STFTL1 RB048RSM20STFTL1 Rohm Semiconductor rb048rsm20stftl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
10+2.13 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.11 EUR
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RB088RSM20STFTL1 RB088RSM20STFTL1 Rohm Semiconductor rb088rsm20stftl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STFTL1 RB088RSM20STFTL1 Rohm Semiconductor rb088rsm20stftl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
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RB028RSM20STFTL1 RB028RSM20STFTL1 Rohm Semiconductor rb028rsm20stftl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STFTL1 RB028RSM20STFTL1 Rohm Semiconductor rb028rsm20stftl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STL1 RB208RSM20STL1 Rohm Semiconductor rb208rsm20stl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STL1 RB208RSM20STL1 Rohm Semiconductor rb208rsm20stl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.21 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.16 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STFTL1 RB208RSM20STFTL1 Rohm Semiconductor rb208rsm20stftl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.14 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STFTL1 RB208RSM20STFTL1 Rohm Semiconductor rb208rsm20stftl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
10+2.54 EUR
100+1.74 EUR
500+1.4 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SCT4036DEHRC11 SCT4036DEHRC11 Rohm Semiconductor sct4036dehr-e.pdf Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.91 EUR
30+13.32 EUR
120+11.44 EUR
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SCT4050KEC11 SCT4050KEC11 Rohm Semiconductor sct4050ke-e.pdf Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
auf Bestellung 450 Stücke:
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1+22.19 EUR
30+13.51 EUR
120+11.6 EUR
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2SC5658HZGT2LQ 2SC5658HZGT2LQ Rohm Semiconductor datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5658HZGT2LQ 2SC5658HZGT2LQ Rohm Semiconductor datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7170 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
143+0.12 EUR
165+0.11 EUR
196+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
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ESR10EZPF2212 ESR10EZPF2212 Rohm Semiconductor esr-e.pdf Description: RES 22.1K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
Produkt ist nicht verfügbar
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ESR10EZPF2212 ESR10EZPF2212 Rohm Semiconductor esr-e.pdf Description: RES 22.1K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
233+0.076 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
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SDR10EZPF4R30 SDR10EZPF4R30 Rohm Semiconductor datasheet?p=SDR10EZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 4.3 Ohms
Produkt ist nicht verfügbar
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SDR10EZPF4R30 SDR10EZPF4R30 Rohm Semiconductor datasheet?p=SDR10EZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 4.3 Ohms
auf Bestellung 3035 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
103+0.17 EUR
129+0.14 EUR
151+0.12 EUR
174+0.1 EUR
250+0.086 EUR
500+0.078 EUR
1000+0.07 EUR
Mindestbestellmenge: 53
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MCR18SEQPF33R0 MCR18SEQPF33R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCR18SEQPF33R0 MCR18SEQPF33R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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ESR03EZPD2201 ESR03EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPD2201 ESR03EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
113+0.16 EUR
143+0.12 EUR
167+0.11 EUR
193+0.091 EUR
250+0.077 EUR
500+0.068 EUR
1000+0.062 EUR
Mindestbestellmenge: 56
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SDR03EZPD2202 SDR03EZPD2202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.033 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPD2202 SDR03EZPD2202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 9296 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
117+0.15 EUR
148+0.12 EUR
173+0.1 EUR
201+0.088 EUR
250+0.074 EUR
500+0.066 EUR
1000+0.059 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPD2202 ESR03EZPD2202 Rohm Semiconductor esr-e.pdf Description: RES 22K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPD2202 ESR03EZPD2202 Rohm Semiconductor esr-e.pdf Description: RES 22K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
113+0.16 EUR
143+0.12 EUR
167+0.11 EUR
193+0.091 EUR
250+0.077 EUR
500+0.068 EUR
1000+0.062 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
ESR10EZPD2201 ESR10EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR10EZPD2201 ESR10EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
auf Bestellung 4967 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
106+0.17 EUR
133+0.13 EUR
156+0.11 EUR
180+0.098 EUR
250+0.083 EUR
500+0.074 EUR
1000+0.067 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPD2200 SDR10EZPD2200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.06 EUR
Mindestbestellmenge: 5000
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RV7L020GNTCR1 datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RV7L020GNTCR1
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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LM2902EYFV-CE2 datasheet?p=LM2902EYFV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LM2902EYFV-CE2
Hersteller: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LM2902EYFV-CE2 datasheet?p=LM2902EYFV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LM2902EYFV-CE2
Hersteller: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
15+1.23 EUR
25+1.11 EUR
100+0.98 EUR
250+0.92 EUR
500+0.88 EUR
1000+0.86 EUR
Mindestbestellmenge: 11
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RX2P06BBHC7G rx2p06bbhc7g-e.pdf
RX2P06BBHC7G
Hersteller: Rohm Semiconductor
Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
30+2.82 EUR
120+2.3 EUR
510+1.91 EUR
Mindestbestellmenge: 4
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RD3P07BBHTL1 rd3p07bbhtl1-e.pdf
RD3P07BBHTL1
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Produkt ist nicht verfügbar
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RD3P07BBHTL1 rd3p07bbhtl1-e.pdf
RD3P07BBHTL1
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.7 EUR
10+3.73 EUR
100+2.62 EUR
500+2.14 EUR
1000+1.99 EUR
Mindestbestellmenge: 4
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MCR03SEQPF5102 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5102
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.0074 EUR
10000+0.0071 EUR
15000+0.0069 EUR
25000+0.0067 EUR
35000+0.0066 EUR
50000+0.0065 EUR
Mindestbestellmenge: 5000
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MCR03SEQPF5102 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5102
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 99671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
1112+0.016 EUR
1250+0.014 EUR
1588+0.011 EUR
1786+0.0099 EUR
1931+0.0091 EUR
2075+0.0085 EUR
2500+0.0078 EUR
Mindestbestellmenge: 112
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MCR01SMQPF5102 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF5102
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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MCR01SMQPF5102 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF5102
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF5102 sfr-e.pdf
SFR01MZPF5102
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0402 CA
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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RB532HS-30T15R datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB532HS-30T15R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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RB532HS-30T15R datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB532HS-30T15R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
55+0.33 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 30
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RB058RSM20STL1 datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Produkt ist nicht verfügbar
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RB058RSM20STL1 datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
2000+0.54 EUR
Mindestbestellmenge: 9
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RB058RSM20STFTL1 datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.57 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB058RSM20STFTL1 datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RB038RSM20STL1 rb038rsm20stl1-e.pdf
RB038RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.71 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB038RSM20STL1 rb038rsm20stl1-e.pdf
RB038RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STL1 rb098rsm20stl1-e.pdf
RB098RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.71 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STL1 rb098rsm20stl1-e.pdf
RB098RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STL1 rb048rsm20stl1-e.pdf
RB048RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.78 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STL1 rb048rsm20stl1-e.pdf
RB048RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+1.86 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STL1 rb088rsm20stl1-e.pdf
RB088RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.79 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STL1 rb088rsm20stl1-e.pdf
RB088RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STL1 rb028rsm20stl1-e.pdf
RB028RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.79 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STL1 rb028rsm20stl1-e.pdf
RB028RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB038RSM20STFTL1 rb038rsm20stftl1-e.pdf
RB038RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.83 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB038RSM20STFTL1 rb038rsm20stftl1-e.pdf
RB038RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STFTL1 rb098rsm20stftl1-e.pdf
RB098RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB098RSM20STFTL1 rb098rsm20stftl1-e.pdf
RB098RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STFTL1 rb048rsm20stftl1-e.pdf
RB048RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.92 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STFTL1 rb048rsm20stftl1-e.pdf
RB048RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.13 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STFTL1 rb088rsm20stftl1-e.pdf
RB088RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STFTL1 rb088rsm20stftl1-e.pdf
RB088RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STFTL1 rb028rsm20stftl1-e.pdf
RB028RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STFTL1 rb028rsm20stftl1-e.pdf
RB028RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STL1 rb208rsm20stl1-e.pdf
RB208RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STL1 rb208rsm20stl1-e.pdf
RB208RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.21 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.16 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STFTL1 rb208rsm20stftl1-e.pdf
RB208RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.14 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
RB208RSM20STFTL1 rb208rsm20stftl1-e.pdf
RB208RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.54 EUR
100+1.74 EUR
500+1.4 EUR
Mindestbestellmenge: 5
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SCT4036DEHRC11 sct4036dehr-e.pdf
SCT4036DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.91 EUR
30+13.32 EUR
120+11.44 EUR
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SCT4050KEC11 sct4050ke-e.pdf
SCT4050KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.19 EUR
30+13.51 EUR
120+11.6 EUR
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2SC5658HZGT2LQ datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC5658HZGT2LQ
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SC5658HZGT2LQ datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC5658HZGT2LQ
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
165+0.11 EUR
196+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
2500+0.069 EUR
Mindestbestellmenge: 100
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ESR10EZPF2212 esr-e.pdf
ESR10EZPF2212
Hersteller: Rohm Semiconductor
Description: RES 22.1K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
Produkt ist nicht verfügbar
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ESR10EZPF2212 esr-e.pdf
ESR10EZPF2212
Hersteller: Rohm Semiconductor
Description: RES 22.1K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
233+0.076 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
Mindestbestellmenge: 67
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SDR10EZPF4R30 datasheet?p=SDR10EZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
SDR10EZPF4R30
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 4.3 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPF4R30 datasheet?p=SDR10EZPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
SDR10EZPF4R30
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 4.3 Ohms
auf Bestellung 3035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
103+0.17 EUR
129+0.14 EUR
151+0.12 EUR
174+0.1 EUR
250+0.086 EUR
500+0.078 EUR
1000+0.07 EUR
Mindestbestellmenge: 53
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MCR18SEQPF33R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF33R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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MCR18SEQPF33R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF33R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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ESR03EZPD2201 esr-e.pdf
ESR03EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
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ESR03EZPD2201 esr-e.pdf
ESR03EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
113+0.16 EUR
143+0.12 EUR
167+0.11 EUR
193+0.091 EUR
250+0.077 EUR
500+0.068 EUR
1000+0.062 EUR
Mindestbestellmenge: 56
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SDR03EZPD2202 sdr-e.pdf
SDR03EZPD2202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.033 EUR
Mindestbestellmenge: 5000
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SDR03EZPD2202 sdr-e.pdf
SDR03EZPD2202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 9296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
117+0.15 EUR
148+0.12 EUR
173+0.1 EUR
201+0.088 EUR
250+0.074 EUR
500+0.066 EUR
1000+0.059 EUR
Mindestbestellmenge: 59
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ESR03EZPD2202 esr-e.pdf
ESR03EZPD2202
Hersteller: Rohm Semiconductor
Description: RES 22K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR03EZPD2202 esr-e.pdf
ESR03EZPD2202
Hersteller: Rohm Semiconductor
Description: RES 22K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
113+0.16 EUR
143+0.12 EUR
167+0.11 EUR
193+0.091 EUR
250+0.077 EUR
500+0.068 EUR
1000+0.062 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
ESR10EZPD2201 esr-e.pdf
ESR10EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESR10EZPD2201 esr-e.pdf
ESR10EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
auf Bestellung 4967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
106+0.17 EUR
133+0.13 EUR
156+0.11 EUR
180+0.098 EUR
250+0.083 EUR
500+0.074 EUR
1000+0.067 EUR
Mindestbestellmenge: 53
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SDR10EZPD2200 sdr-e.pdf
SDR10EZPD2200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.06 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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