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VS20VUA1LBTBR1 VS20VUA1LBTBR1 Rohm Semiconductor vs20vua1lbtbr1-e.pdf Description: 20V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.47 EUR
Mindestbestellmenge: 3000
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VS20VUA1LBTBR1 VS20VUA1LBTBR1 Rohm Semiconductor vs20vua1lbtbr1-e.pdf Description: 20V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
VS24VUA1LBTBR1 VS24VUA1LBTBR1 Rohm Semiconductor vs24vua1lbtbr1-e.pdf Description: 24V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS24VUA1LBTBR1 VS24VUA1LBTBR1 Rohm Semiconductor vs24vua1lbtbr1-e.pdf Description: 24V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
VS18VUA1LBTBR1 VS18VUA1LBTBR1 Rohm Semiconductor vs18vua1lbtbr1-e.pdf Description: 18V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS18VUA1LBTBR1 VS18VUA1LBTBR1 Rohm Semiconductor vs18vua1lbtbr1-e.pdf Description: 18V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
VS6V0UA1LBTBR1 VS6V0UA1LBTBR1 Rohm Semiconductor vs6v0ua1lbtbr1-e.pdf Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS6V0UA1LBTBR1 VS6V0UA1LBTBR1 Rohm Semiconductor vs6v0ua1lbtbr1-e.pdf Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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SFR18EZPJ183 SFR18EZPJ183 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 18 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.032 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SFR18EZPJ183 SFR18EZPJ183 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 18 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
222+0.08 EUR
264+0.067 EUR
313+0.056 EUR
500+0.052 EUR
1000+0.047 EUR
Mindestbestellmenge: 67
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SCT4036DEC11 SCT4036DEC11 Rohm Semiconductor sct4036de-e.pdf Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.98 EUR
30+12.11 EUR
120+10.39 EUR
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2SA2071P5T100 2SA2071P5T100 Rohm Semiconductor datasheet?p=2SA2071P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 13
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ESR01MZPF36R0 ESR01MZPF36R0 Rohm Semiconductor esr-e.pdf Description: RES 36 OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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ESR01MZPF36R0 ESR01MZPF36R0 Rohm Semiconductor esr-e.pdf Description: RES 36 OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 36 Ohms
auf Bestellung 9800 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
88+0.2 EUR
110+0.16 EUR
149+0.12 EUR
186+0.095 EUR
250+0.084 EUR
5000+0.071 EUR
Mindestbestellmenge: 46
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MCR18SEQPF36R0 MCR18SEQPF36R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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MCR18SEQPF36R0 MCR18SEQPF36R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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KTR10EZPF5R60 KTR10EZPF5R60 Rohm Semiconductor ktr-e.pdf Description: RES 5.6 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 5.6 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.048 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
KTR10EZPF5R60 KTR10EZPF5R60 Rohm Semiconductor ktr-e.pdf Description: RES 5.6 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 5.6 Ohms
auf Bestellung 9720 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
204+0.086 EUR
250+0.072 EUR
500+0.065 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
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KTR10EZPF2R70 KTR10EZPF2R70 Rohm Semiconductor ktr-e.pdf Description: RES 2.7 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.048 EUR
Mindestbestellmenge: 5000
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KTR10EZPF2R70 KTR10EZPF2R70 Rohm Semiconductor ktr-e.pdf Description: RES 2.7 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
211+0.084 EUR
250+0.072 EUR
500+0.064 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
KTR03EZPJ512 KTR03EZPJ512 Rohm Semiconductor ktr-e.pdf Description: RES SMD 5.1K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.033 EUR
Mindestbestellmenge: 5000
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KTR03EZPJ512 KTR03EZPJ512 Rohm Semiconductor ktr-e.pdf Description: RES SMD 5.1K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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LTR100JZPJ562 LTR100JZPJ562 Rohm Semiconductor ltr-e.pdf Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
Produkt ist nicht verfügbar
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LTR100JZPJ562 LTR100JZPJ562 Rohm Semiconductor ltr-e.pdf Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
34+0.52 EUR
41+0.44 EUR
50+0.39 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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SCT4065DLLTRDC SCT4065DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4065DLLTRDC SCT4065DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.89 EUR
10+11.61 EUR
25+10.79 EUR
100+9.89 EUR
250+9.46 EUR
500+9.2 EUR
1000+8.99 EUR
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SCT4045DLLTRDC SCT4045DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4045DLLTRDC SCT4045DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.53 EUR
10+14.57 EUR
25+13.58 EUR
100+12.49 EUR
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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4020DLLTRDC SCT4020DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.16 EUR
10+28.22 EUR
25+26.48 EUR
100+24.57 EUR
250+23.66 EUR
500+23.11 EUR
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4013DLLTRDC SCT4013DLLTRDC Rohm Semiconductor TOLL-9LSATAC.jpg Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.85 EUR
10+41.26 EUR
25+38.86 EUR
100+36.23 EUR
250+34.98 EUR
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
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BD7LS07ZG-CTL BD7LS07ZG-CTL Rohm Semiconductor datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
37+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2 MOhms
Produkt ist nicht verfügbar
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SDR03EZPF2004 SDR03EZPF2004 Rohm Semiconductor sdr-e.pdf Description: RES SMD 2 MOHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2 MOhms
auf Bestellung 3 Stücke:
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.83 EUR
Mindestbestellmenge: 3000
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AG543EGS4FRATCB AG543EGS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
15+1.26 EUR
25+1.14 EUR
100+1 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.87 EUR
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1 EUR
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AG542EGS4FRATCB AG542EGS4FRATCB Rohm Semiconductor datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
12+1.5 EUR
25+1.36 EUR
100+1.2 EUR
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500+1.09 EUR
1000+1.05 EUR
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG047FLS4FRATCB AG047FLS4FRATCB Rohm Semiconductor datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2186 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
12+1.58 EUR
25+1.43 EUR
100+1.27 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.11 EUR
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.8 EUR
Mindestbestellmenge: 3000
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AG533EES4FRATCB AG533EES4FRATCB Rohm Semiconductor ag533ees4fratcb-e.pdf Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
10+1.84 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.92 EUR
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
Mindestbestellmenge: 3000
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AG048FLS4FRATCB AG048FLS4FRATCB Rohm Semiconductor ag048fls4fratcb-e.pdf Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AG532EES4FRATCB AG532EES4FRATCB Rohm Semiconductor ag532ees4fratcb-e.pdf Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.13 EUR
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB AG540EGS4FRATCB Rohm Semiconductor ag540egs4fratcb-e.pdf Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.12 EUR
10+3.34 EUR
100+2.33 EUR
500+2.01 EUR
Mindestbestellmenge: 4
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
Produkt ist nicht verfügbar
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ESR18EZPF2491 ESR18EZPF2491 Rohm Semiconductor esr-e.pdf Description: RES 2.49K OHM 1% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
211+0.083 EUR
250+0.07 EUR
301+0.059 EUR
500+0.051 EUR
1000+0.047 EUR
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.05 EUR
Mindestbestellmenge: 5000
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LTR18EZPF2491 LTR18EZPF2491 Rohm Semiconductor ltr-e.pdf Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
114+0.15 EUR
144+0.12 EUR
169+0.1 EUR
197+0.09 EUR
250+0.075 EUR
500+0.067 EUR
1000+0.061 EUR
Mindestbestellmenge: 59
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BD10IA5MEFJ-ME2 BD10IA5MEFJ-ME2 Rohm Semiconductor datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 700 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
18+1.01 EUR
25+0.91 EUR
100+0.8 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
Mindestbestellmenge: 13
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBR20BM60AFHTL RBR20BM60AFHTL Rohm Semiconductor datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1735 Stücke:
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8+2.24 EUR
12+1.6 EUR
100+1.33 EUR
500+1.06 EUR
1000+1 EUR
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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8000+0.066 EUR
Mindestbestellmenge: 8000
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DTA124XMHZGT2L DTA124XMHZGT2L Rohm Semiconductor VMT3.jpg Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
141+0.12 EUR
162+0.11 EUR
193+0.092 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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TFZVTR24B TFZVTR24B Rohm Semiconductor datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
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VS20VUA1LBTBR1 vs20vua1lbtbr1-e.pdf
VS20VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 20V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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VS20VUA1LBTBR1 vs20vua1lbtbr1-e.pdf
VS20VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 20V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
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VS24VUA1LBTBR1 vs24vua1lbtbr1-e.pdf
VS24VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 24V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS24VUA1LBTBR1 vs24vua1lbtbr1-e.pdf
VS24VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 24V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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VS18VUA1LBTBR1 vs18vua1lbtbr1-e.pdf
VS18VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 18V 600W, HIGHLY RELIABLE, TRANS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS18VUA1LBTBR1 vs18vua1lbtbr1-e.pdf
VS18VUA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 18V 600W, HIGHLY RELIABLE, TRANS
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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VS6V0UA1LBTBR1 vs6v0ua1lbtbr1-e.pdf
VS6V0UA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS6V0UA1LBTBR1 vs6v0ua1lbtbr1-e.pdf
VS6V0UA1LBTBR1
Hersteller: Rohm Semiconductor
Description: 6V 600W, HIGHLY RELIABLE, TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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SFR18EZPJ183 sfr-e.pdf
SFR18EZPJ183
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 18 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.032 EUR
Mindestbestellmenge: 5000
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SFR18EZPJ183 sfr-e.pdf
SFR18EZPJ183
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 18 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
222+0.08 EUR
264+0.067 EUR
313+0.056 EUR
500+0.052 EUR
1000+0.047 EUR
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SCT4036DEC11 sct4036de-e.pdf
SCT4036DEC11
Hersteller: Rohm Semiconductor
Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.98 EUR
30+12.11 EUR
120+10.39 EUR
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2SA2071P5T100 datasheet?p=2SA2071P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2071P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 13
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ESR01MZPF36R0 esr-e.pdf
ESR01MZPF36R0
Hersteller: Rohm Semiconductor
Description: RES 36 OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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ESR01MZPF36R0 esr-e.pdf
ESR01MZPF36R0
Hersteller: Rohm Semiconductor
Description: RES 36 OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 36 Ohms
auf Bestellung 9800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
88+0.2 EUR
110+0.16 EUR
149+0.12 EUR
186+0.095 EUR
250+0.084 EUR
5000+0.071 EUR
Mindestbestellmenge: 46
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MCR18SEQPF36R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF36R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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MCR18SEQPF36R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF36R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 36 Ohms
Produkt ist nicht verfügbar
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KTR10EZPF5R60 ktr-e.pdf
KTR10EZPF5R60
Hersteller: Rohm Semiconductor
Description: RES 5.6 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 5.6 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.048 EUR
Mindestbestellmenge: 5000
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KTR10EZPF5R60 ktr-e.pdf
KTR10EZPF5R60
Hersteller: Rohm Semiconductor
Description: RES 5.6 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 5.6 Ohms
auf Bestellung 9720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
204+0.086 EUR
250+0.072 EUR
500+0.065 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
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KTR10EZPF2R70 ktr-e.pdf
KTR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: RES 2.7 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.048 EUR
Mindestbestellmenge: 5000
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KTR10EZPF2R70 ktr-e.pdf
KTR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: RES 2.7 OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
118+0.15 EUR
149+0.12 EUR
176+0.1 EUR
211+0.084 EUR
250+0.072 EUR
500+0.064 EUR
1000+0.058 EUR
Mindestbestellmenge: 63
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KTR03EZPJ512 ktr-e.pdf
KTR03EZPJ512
Hersteller: Rohm Semiconductor
Description: RES SMD 5.1K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.033 EUR
Mindestbestellmenge: 5000
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KTR03EZPJ512 ktr-e.pdf
KTR03EZPJ512
Hersteller: Rohm Semiconductor
Description: RES SMD 5.1K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 5.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
154+0.11 EUR
199+0.089 EUR
236+0.075 EUR
278+0.064 EUR
337+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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LTR100JZPJ562 ltr-e.pdf
LTR100JZPJ562
Hersteller: Rohm Semiconductor
Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
Produkt ist nicht verfügbar
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LTR100JZPJ562 ltr-e.pdf
LTR100JZPJ562
Hersteller: Rohm Semiconductor
Description: RES SMD 5.6K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 5.6 kOhms
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
34+0.52 EUR
41+0.44 EUR
50+0.39 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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SCT4065DLLTRDC TOLL-9LSATAC.jpg
SCT4065DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT4065DLLTRDC TOLL-9LSATAC.jpg
SCT4065DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 26A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.89 EUR
10+11.61 EUR
25+10.79 EUR
100+9.89 EUR
250+9.46 EUR
500+9.2 EUR
1000+8.99 EUR
Mindestbestellmenge: 2
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SCT4045DLLTRDC TOLL-9LSATAC.jpg
SCT4045DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT4045DLLTRDC TOLL-9LSATAC.jpg
SCT4045DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 37A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 133W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.53 EUR
10+14.57 EUR
25+13.58 EUR
100+12.49 EUR
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
Produkt ist nicht verfügbar
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SCT4020DLLTRDC TOLL-9LSATAC.jpg
SCT4020DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 80A, 9-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 18V
Power Dissipation (Max): 277W
Vgs(th) (Max) @ Id: 4.8V @ 20mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 500 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.16 EUR
10+28.22 EUR
25+26.48 EUR
100+24.57 EUR
250+23.66 EUR
500+23.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT4013DLLTRDC TOLL-9LSATAC.jpg
SCT4013DLLTRDC
Hersteller: Rohm Semiconductor
Description: 750V, 120A, 9-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 405W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.85 EUR
10+41.26 EUR
25+38.86 EUR
100+36.23 EUR
250+34.98 EUR
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
Mindestbestellmenge: 3000
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BD7LS07ZG-CTL datasheet?p=BD7LS07ZG-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD7LS07ZG-CTL
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE BUFFER WITH OP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 25
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2 MOhms
Produkt ist nicht verfügbar
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SDR03EZPF2004 sdr-e.pdf
SDR03EZPF2004
Hersteller: Rohm Semiconductor
Description: RES SMD 2 MOHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2 MOhms
auf Bestellung 3 Stücke:
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.83 EUR
Mindestbestellmenge: 3000
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AG543EGS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG543EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -28A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.1mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.26 EUR
25+1.14 EUR
100+1 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.87 EUR
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1 EUR
Mindestbestellmenge: 3000
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AG542EGS4FRATCB datasheet?p=AG042FGS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG542EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -67A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
12+1.5 EUR
25+1.36 EUR
100+1.2 EUR
250+1.13 EUR
500+1.09 EUR
1000+1.05 EUR
Mindestbestellmenge: 9
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG047FLS4FRATCB datasheet?p=AG047FLS4FRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
AG047FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 89A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 268µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.58 EUR
25+1.43 EUR
100+1.27 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.11 EUR
Mindestbestellmenge: 9
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.8 EUR
Mindestbestellmenge: 3000
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AG533EES4FRATCB ag533ees4fratcb-e.pdf
AG533EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -35A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.84 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.92 EUR
Mindestbestellmenge: 7
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
Mindestbestellmenge: 3000
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AG048FLS4FRATCB ag048fls4fratcb-e.pdf
AG048FLS4FRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 36A, HPLF5060T5LSAH, POW
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.95 EUR
Mindestbestellmenge: 3000
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AG532EES4FRATCB ag532ees4fratcb-e.pdf
AG532EES4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -30V -85A, HPLF5060T5LSAH, P
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AG540EGS4FRATCB ag540egs4fratcb-e.pdf
AG540EGS4FRATCB
Hersteller: Rohm Semiconductor
Description: PCH -40V -120A, HPLF5060T5LSAH,
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
10+3.34 EUR
100+2.33 EUR
500+2.01 EUR
Mindestbestellmenge: 4
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
Produkt ist nicht verfügbar
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ESR18EZPF2491 esr-e.pdf
ESR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
139+0.13 EUR
178+0.099 EUR
211+0.083 EUR
250+0.07 EUR
301+0.059 EUR
500+0.051 EUR
1000+0.047 EUR
Mindestbestellmenge: 67
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.05 EUR
Mindestbestellmenge: 5000
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LTR18EZPF2491 ltr-e.pdf
LTR18EZPF2491
Hersteller: Rohm Semiconductor
Description: RES 2.49K OHM 1% 3/4W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.49 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
114+0.15 EUR
144+0.12 EUR
169+0.1 EUR
197+0.09 EUR
250+0.075 EUR
500+0.067 EUR
1000+0.061 EUR
Mindestbestellmenge: 59
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BD10IA5MEFJ-ME2 datasheet?p=BD10IA5MEFJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD10IA5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1V 500MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 700 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.01 EUR
25+0.91 EUR
100+0.8 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
Mindestbestellmenge: 13
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBR20BM60AFHTL datasheet?p=RBR20BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20BM60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.6 EUR
100+1.33 EUR
500+1.06 EUR
1000+1 EUR
Mindestbestellmenge: 8
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.066 EUR
Mindestbestellmenge: 8000
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DTA124XMHZGT2L VMT3.jpg
DTA124XMHZGT2L
Hersteller: Rohm Semiconductor
Description: PNP, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
141+0.12 EUR
162+0.11 EUR
193+0.092 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
2500+0.07 EUR
Mindestbestellmenge: 100
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TFZVTR24B datasheet?p=TFZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 35 Ohms
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Produkt ist nicht verfügbar
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