Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (101904) > Seite 1078 nach 1699
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AG045FLS4FRATCB | Rohm Semiconductor |
Description: NCH 60V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.9mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
AG040FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 4.2mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
AG040FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 4.2mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
BH7881EFV-E2 | Rohm Semiconductor |
Description: IC AMP CLASS AB STER 2W 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Output Type: 2-Channel (Stereo) with Stereo Headphones Mounting Type: Surface Mount Type: Class AB Operating Temperature: -10°C ~ 70°C (TA) Voltage - Supply: 3.3V ~ 5.5V Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm Supplier Device Package: 24-HTSSOP-B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MCH155A010CK | Rohm Semiconductor |
Description: CAP CER 1PF 50V C0G/NP0 0402Packaging: Tape & Reel (TR) Tolerance: ±0.25pF Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.022" (0.55mm) Capacitance: 1 pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
DTC123EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC123EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR01MZPF3902 | Rohm Semiconductor |
Description: RES SMD 39K OHM 1% 1/16W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 39 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SFR01MZPF3902 | Rohm Semiconductor |
Description: RES SMD 39K OHM 1% 1/16W 0402Packaging: Cut Tape (CT) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 39 kOhms |
auf Bestellung 7793 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
LTR100JZPJ330 | Rohm Semiconductor |
Description: RES SMD 33 OHM 5% 3W 2512 WIDEPackaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 33 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
LTR100JZPJ330 | Rohm Semiconductor |
Description: RES SMD 33 OHM 5% 3W 2512 WIDEPackaging: Cut Tape (CT) Power (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 33 Ohms |
auf Bestellung 2385 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SDR10EZPJ470 | Rohm Semiconductor |
Description: RES 47 OHM 5% 1/2W 0805Packaging: Tape & Reel (TR) Power (Watts): 0.667W, 2/3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SDR10EZPJ470 | Rohm Semiconductor |
Description: RES 47 OHM 5% 1/2W 0805Packaging: Cut Tape (CT) Power (Watts): 0.667W, 2/3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 Ohms |
auf Bestellung 4760 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
ESR18EZPF24R0 | Rohm Semiconductor |
Description: RES 24 OHM 1% 3/4W 1206Packaging: Tape & Reel (TR) Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ESR18EZPF24R0 | Rohm Semiconductor |
Description: RES 24 OHM 1% 3/4W 1206Packaging: Cut Tape (CT) Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR18EZPF3902 | Rohm Semiconductor |
Description: RES 39K OHM 1% 1/4W 1206Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 39 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR18EZPF3902 | Rohm Semiconductor |
Description: RES 39K OHM 1% 1/4W 1206Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 39 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ESR01MZPF6203 | Rohm Semiconductor |
Description: RES 620K OHM 1% 1/5W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ESR01MZPF6203 | Rohm Semiconductor |
Description: RES 620K OHM 1% 1/5W 0402Packaging: Cut Tape (CT) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
auf Bestellung 8790 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR01MZPJ624 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPackaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SFR01MZPJ624 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPackaging: Cut Tape (CT) Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR01MZPF6202 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPackaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SFR01MZPF6202 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPackaging: Cut Tape (CT) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
auf Bestellung 9966 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
SFR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/16W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SFR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/16W 0402Packaging: Cut Tape (CT) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
auf Bestellung 9876 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
ESR01MZPF6202 | Rohm Semiconductor |
Description: RES 62K OHM 1% 1/5W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
ESR01MZPF6202 | Rohm Semiconductor |
Description: RES 62K OHM 1% 1/5W 0402Packaging: Cut Tape (CT) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
ESR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/5W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
ESR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/5W 0402Packaging: Cut Tape (CT) Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
BM65374S-VC | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
BM65374S-VA | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
BM65375S-VA | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
BM65375S-VC | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
PBZLTBR1130 | Rohm Semiconductor |
Description: 1000MW, 102V, DO-214AA(SMB), ZENPackaging: Tape & Reel (TR) Tolerance: ±6.15% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SMBP Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 102 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
PBZLTBR1130 | Rohm Semiconductor |
Description: 1000MW, 102V, DO-214AA(SMB), ZENPackaging: Cut Tape (CT) Tolerance: ±6.15% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SMBP Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 102 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC143EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC143EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC114TUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
DTC114TUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RV7L020GNTCR1 | Rohm Semiconductor |
Description: NCH 60V 2A MIDDLE POWER MOSFET :Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
RV7L020GNTCR1 | Rohm Semiconductor |
Description: NCH 60V 2A MIDDLE POWER MOSFET :Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V |
auf Bestellung 1850 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
LM2902EYFV-CE2 | Rohm Semiconductor |
Description: EMARMOUR, AUTOMOTIVE EXCEPackaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 150°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
LM2902EYFV-CE2 | Rohm Semiconductor |
Description: EMARMOUR, AUTOMOTIVE EXCEPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 150°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
auf Bestellung 1965 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RX2P06BBHC7G | Rohm Semiconductor |
Description: NCH 100V 65A, TO-220FP, POWER MOPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RD3P07BBHTL1 | Rohm Semiconductor |
Description: NCH 100V 70A, TO-252, POWER MOSFPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
RD3P07BBHTL1 | Rohm Semiconductor |
Description: NCH 100V 70A, TO-252, POWER MOSFPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V |
auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
MCR03SEQPF5102 | Rohm Semiconductor |
Description: 1608(0603)SIZE, HIGH POWER THICKPackaging: Tape & Reel (TR) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 51 kOhms |
auf Bestellung 95000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
MCR03SEQPF5102 | Rohm Semiconductor |
Description: 1608(0603)SIZE, HIGH POWER THICKPackaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 51 kOhms |
auf Bestellung 99771 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
MCR01SMQPF5102 | Rohm Semiconductor |
Description: 1005(0402)SIZE, HIGH POWER THICKPackaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 51 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
MCR01SMQPF5102 | Rohm Semiconductor |
Description: 1005(0402)SIZE, HIGH POWER THICKPackaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 51 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
SFR01MZPF5102 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RES 0402 CAPackaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 51 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
RB532HS-30T15R | Rohm Semiconductor |
Description: DIODE SCHOTTK 30V 200MA DSN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
RB532HS-30T15R | Rohm Semiconductor |
Description: DIODE SCHOTTK 30V 200MA DSN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
auf Bestellung 3715 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RB058RSM20STL1 | Rohm Semiconductor |
Description: 200V 3A, TO-277A, ULTRA LOW IR SPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RB058RSM20STL1 | Rohm Semiconductor |
Description: 200V 3A, TO-277A, ULTRA LOW IR SPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
RB058RSM20STFTL1 | Rohm Semiconductor |
Description: 200V 3A, TO-277A, ULTRA LOW IR SPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AG045FLS4FRATCB |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.78 EUR |
| 10+ | 2.82 EUR |
| 25+ | 2.58 EUR |
| 100+ | 2.31 EUR |
| 250+ | 2.18 EUR |
| 500+ | 2.1 EUR |
| 1000+ | 2.04 EUR |
| AG040FGS4FRATCB |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.74 EUR |
| AG040FGS4FRATCB |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.35 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.44 EUR |
| 500+ | 2.13 EUR |
| BH7881EFV-E2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCH155A010CK |
![]() |
Hersteller: Rohm Semiconductor
Description: CAP CER 1PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±0.25pF
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
Description: CAP CER 1PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±0.25pF
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.065 EUR |
| DTC123EMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 143+ | 0.12 EUR |
| 165+ | 0.11 EUR |
| 196+ | 0.09 EUR |
| 250+ | 0.082 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.073 EUR |
| 2500+ | 0.069 EUR |
| DTC123JMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.065 EUR |
| DTC123JMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.18 EUR |
| 145+ | 0.12 EUR |
| 166+ | 0.11 EUR |
| 196+ | 0.09 EUR |
| 250+ | 0.082 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.073 EUR |
| 2500+ | 0.069 EUR |
| SFR01MZPF3902 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Description: RES SMD 39K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPF3902 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Description: RES SMD 39K OHM 1% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
auf Bestellung 7793 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 179+ | 0.099 EUR |
| 230+ | 0.077 EUR |
| 275+ | 0.064 EUR |
| 327+ | 0.054 EUR |
| 396+ | 0.044 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.034 EUR |
| 5000+ | 0.027 EUR |
| LTR100JZPJ330 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LTR100JZPJ330 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
auf Bestellung 2385 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 34+ | 0.52 EUR |
| 40+ | 0.44 EUR |
| 50+ | 0.39 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.28 EUR |
| SDR10EZPJ470 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Description: RES 47 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDR10EZPJ470 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Description: RES 47 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 121+ | 0.15 EUR |
| 152+ | 0.12 EUR |
| 179+ | 0.099 EUR |
| 215+ | 0.082 EUR |
| 250+ | 0.071 EUR |
| 500+ | 0.063 EUR |
| 1000+ | 0.057 EUR |
| ESR18EZPF24R0 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: RES 24 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESR18EZPF24R0 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: RES 24 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 143+ | 0.12 EUR |
| 182+ | 0.097 EUR |
| 216+ | 0.082 EUR |
| 262+ | 0.067 EUR |
| 310+ | 0.057 EUR |
| 500+ | 0.051 EUR |
| 1000+ | 0.046 EUR |
| SFR18EZPF3902 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
Description: RES 39K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.054 EUR |
| SFR18EZPF3902 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
Description: RES 39K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| ESR01MZPF6203 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: RES 620K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESR01MZPF6203 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: RES 620K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 8790 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 90+ | 0.2 EUR |
| 112+ | 0.16 EUR |
| 130+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 250+ | 0.1 EUR |
| 500+ | 0.093 EUR |
| 1000+ | 0.083 EUR |
| 5000+ | 0.07 EUR |
| SFR01MZPJ624 |
![]() |
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPJ624 |
![]() |
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 209+ | 0.084 EUR |
| 269+ | 0.065 EUR |
| 325+ | 0.054 EUR |
| 396+ | 0.045 EUR |
| 491+ | 0.036 EUR |
| 657+ | 0.027 EUR |
| 5000+ | 0.022 EUR |
| SFR01MZPF6202 |
![]() |
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPF6202 |
![]() |
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9966 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 179+ | 0.099 EUR |
| 230+ | 0.077 EUR |
| 275+ | 0.064 EUR |
| 324+ | 0.054 EUR |
| 396+ | 0.044 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.034 EUR |
| 5000+ | 0.027 EUR |
| SFR01MZPF6201 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPF6201 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 179+ | 0.099 EUR |
| 230+ | 0.077 EUR |
| 275+ | 0.064 EUR |
| 324+ | 0.054 EUR |
| 396+ | 0.044 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.034 EUR |
| 5000+ | 0.027 EUR |
| ESR01MZPF6202 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: RES 62K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESR01MZPF6202 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: RES 62K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 90+ | 0.2 EUR |
| 112+ | 0.16 EUR |
| 130+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 250+ | 0.1 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.083 EUR |
| 5000+ | 0.07 EUR |
| ESR01MZPF6201 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.052 EUR |
| ESR01MZPF6201 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| DTA013ZUBTL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.068 EUR |
| DTA013ZUBTL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 85+ | 0.21 EUR |
| 138+ | 0.13 EUR |
| 500+ | 0.094 EUR |
| 1000+ | 0.083 EUR |
| PBZLTBR1130 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Packaging: Tape & Reel (TR)
Tolerance: ±6.15%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Packaging: Tape & Reel (TR)
Tolerance: ±6.15%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| PBZLTBR1130 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Packaging: Cut Tape (CT)
Tolerance: ±6.15%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Packaging: Cut Tape (CT)
Tolerance: ±6.15%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| DTC143EMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.065 EUR |
| DTC143EMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 143+ | 0.12 EUR |
| 165+ | 0.11 EUR |
| 196+ | 0.09 EUR |
| 250+ | 0.082 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.073 EUR |
| 2500+ | 0.069 EUR |
| DTC114TUBTL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.055 EUR |
| DTC114TUBTL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 105+ | 0.17 EUR |
| 170+ | 0.1 EUR |
| 500+ | 0.076 EUR |
| 1000+ | 0.067 EUR |
| RV7L020GNTCR1 |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RV7L020GNTCR1 |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| LM2902EYFV-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902EYFV-CE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 15+ | 1.19 EUR |
| 25+ | 1.07 EUR |
| 100+ | 0.95 EUR |
| 250+ | 0.89 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.82 EUR |
| RX2P06BBHC7G |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.17 EUR |
| 30+ | 2.82 EUR |
| 120+ | 2.3 EUR |
| 510+ | 1.91 EUR |
| RD3P07BBHTL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3P07BBHTL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.7 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.99 EUR |
| MCR03SEQPF5102 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.0073 EUR |
| 10000+ | 0.007 EUR |
| 15000+ | 0.0068 EUR |
| 25000+ | 0.0067 EUR |
| 35000+ | 0.0065 EUR |
| 50000+ | 0.0064 EUR |
| MCR03SEQPF5102 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
Description: 1608(0603)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 99771 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.14 EUR |
| 1112+ | 0.016 EUR |
| 1250+ | 0.014 EUR |
| 1588+ | 0.011 EUR |
| 1799+ | 0.0098 EUR |
| 1954+ | 0.009 EUR |
| 2097+ | 0.0084 EUR |
| 2500+ | 0.0077 EUR |
| MCR01SMQPF5102 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR01SMQPF5102 |
![]() |
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Description: 1005(0402)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPF5102 |
![]() |
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0402 CA
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Description: SULFUR TOLERANT CHIP RES 0402 CA
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB532HS-30T15R |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB532HS-30T15R |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3715 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| RB058RSM20STL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.48 EUR |
| RB058RSM20STL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.94 EUR |
| 15+ | 1.22 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 2000+ | 0.53 EUR |
| RB058RSM20STFTL1 |
![]() |
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.56 EUR |






















