Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102316) > Seite 1699 nach 1706
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SP8K32HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2372 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K31FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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SP8K31HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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SP8K33FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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SP8K33HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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DTA144EMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 68 Frequency: 250MHz |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA144EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
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DTA144GUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
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DTA144TUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
Produkt ist nicht verfügbar |
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DTA144EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
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DTA144ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
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DTA143EMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
Produkt ist nicht verfügbar |
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RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Max. forward voltage: 0.35V Leakage current: 10µA |
auf Bestellung 4078 Stücke: Lieferzeit 14-21 Tag (e) |
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BR25G1MF-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: SPI Memory organisation: 128kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB021VAM90TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape Mounting: SMD Max. off-state voltage: 90V Max. forward voltage: 0.49V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.9mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD323HE |
Produkt ist nicht verfügbar |
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BD8LB600FS-CE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V Supply voltage: 3...5.5V Operating temperature: -40...150°C Kind of integrated circuit: low-side Protection: over current OCP; overheating OTP; undervoltage UVP Mounting: SMD On-state resistance: 1.4Ω Output current: 0.2A Type of integrated circuit: power switch Number of channels: 8 |
Produkt ist nicht verfügbar |
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RQ3L050GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 20A Power dissipation: 14.8W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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RB160LAM-40TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
auf Bestellung 5930 Stücke: Lieferzeit 14-21 Tag (e) |
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RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
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RB160LAM-40TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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DAN217UMFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Case: SOT323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: double series Max. forward voltage: 1.2V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.3A Reverse recovery time: 4ns Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC59; SOT346 |
Produkt ist nicht verfügbar |
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SSTA56T116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23 Mounting: SMD Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SOT23 Frequency: 50MHz |
Produkt ist nicht verfügbar |
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RSQ015P10FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Type of transistor: P-MOSFET Mounting: SMD Case: TSMT6 Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -6A |
Produkt ist nicht verfügbar |
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RB161MM-20TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Max. forward voltage: 0.35V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 0.7mA Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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SCS215AMC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 36A Max. forward impulse current: 200A Power dissipation: 39W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 136W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220KE2GC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 94A Max. forward impulse current: 0.32kA Leakage current: 0.2mA Power dissipation: 270W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS215AEC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 65A Max. forward impulse current: 200A Power dissipation: 110W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS215AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 65A Max. forward impulse current: 200A Power dissipation: 110W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS215KGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 68A Max. forward impulse current: 0.24kA Power dissipation: 180W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220AEC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 130W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220AMC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 41A Max. forward impulse current: 260A Power dissipation: 40W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220KGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 83A Max. forward impulse current: 310A Power dissipation: 210W Kind of package: tube |
Produkt ist nicht verfügbar |
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SCS220KGC17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.9V Max. load current: 83A Max. forward impulse current: 310A Leakage current: 0.4mA Power dissipation: 210W Kind of package: tube |
Produkt ist nicht verfügbar |
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RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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RSF015N06TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
Produkt ist nicht verfügbar |
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RSQ015N06TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
Produkt ist nicht verfügbar |
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RSF015N06FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 45V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
Produkt ist nicht verfügbar |
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BH3548F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2 Case: SOP8 Supply voltage: 4...5.5V DC Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 62mW Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Mounting: SMD |
Produkt ist nicht verfügbar |
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2SA2029T2LR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.15A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 |
Produkt ist nicht verfügbar |
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2SA2029T2LQ | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 120...270 Collector current: 0.15A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 |
Produkt ist nicht verfügbar |
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RD3S100CNTL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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UMX18NTN | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
Produkt ist nicht verfügbar |
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DTDG14GPT100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
RUF015N02TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.8W Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.31Ω Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BD4933FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: VSOF5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BD4933G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BU4933FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: VSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BU4933G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: SSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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2SC3838KT146N | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346 Frequency: 3.2GHz Collector-emitter voltage: 11V Current gain: 56...120 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC59; SOT346 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SC3838KT146P | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 11V Collector current: 50mA Power dissipation: 0.2W Case: SOT346 Current gain: 56...270 Mounting: SMD Kind of package: reel; tape Frequency: 3.2GHz Kind of transistor: RF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.2A Mounting: SMD Case: SMT3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RTL035N03TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: TUMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 79mΩ Gate charge: 4.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 14A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IMD6AT108 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RB068MM100TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.87V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123F |
auf Bestellung 3369 Stücke: Lieferzeit 14-21 Tag (e) |
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RB168MM100TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.81V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123F |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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RK7002AT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SP8K32HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
43+ | 1.66 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
SP8K31FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8K31HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8K33FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8K33HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA144EMT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
280+ | 0.26 EUR |
DTA144EKAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA144GUAT106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA144TUAT106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA144EETL |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA144ECAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA143EMFHAT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB501SM-30FHT2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
auf Bestellung 4078 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
589+ | 0.12 EUR |
767+ | 0.09 EUR |
1158+ | 0.06 EUR |
2381+ | 0.03 EUR |
2526+ | 0.03 EUR |
BR25G1MF-3GE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB021VAM90TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
Produkt ist nicht verfügbar
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BD8LB600FS-CE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V
Supply voltage: 3...5.5V
Operating temperature: -40...150°C
Kind of integrated circuit: low-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
On-state resistance: 1.4Ω
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 8
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V
Supply voltage: 3...5.5V
Operating temperature: -40...150°C
Kind of integrated circuit: low-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
On-state resistance: 1.4Ω
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 8
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RQ3L050GNTB |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 20A
Power dissipation: 14.8W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 20A
Power dissipation: 14.8W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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RB160LAM-40TFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
auf Bestellung 5930 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
264+ | 0.27 EUR |
365+ | 0.20 EUR |
532+ | 0.13 EUR |
RB160L-40TE25 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
188+ | 0.38 EUR |
296+ | 0.24 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
RB160LAM-40TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
191+ | 0.37 EUR |
232+ | 0.31 EUR |
365+ | 0.20 EUR |
435+ | 0.16 EUR |
589+ | 0.12 EUR |
RGS60TS65DHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.55 EUR |
13+ | 5.56 EUR |
14+ | 5.26 EUR |
DAN217UMFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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DTA123EKAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
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SSTA56T116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
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RSQ015P10FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
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RB161MM-20TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
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SCS215AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 200A
Power dissipation: 39W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 200A
Power dissipation: 39W
Kind of package: tube
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SCS220AGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 136W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 136W
Kind of package: tube
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SCS220KE2GC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 94A
Max. forward impulse current: 0.32kA
Leakage current: 0.2mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 94A
Max. forward impulse current: 0.32kA
Leakage current: 0.2mA
Power dissipation: 270W
Kind of package: tube
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SCS215AEC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
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SCS215AGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
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SCS215KGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 68A
Max. forward impulse current: 0.24kA
Power dissipation: 180W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 68A
Max. forward impulse current: 0.24kA
Power dissipation: 180W
Kind of package: tube
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SCS220AEC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 130W
Kind of package: tube
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SCS220AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 41A
Max. forward impulse current: 260A
Power dissipation: 40W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 41A
Max. forward impulse current: 260A
Power dissipation: 40W
Kind of package: tube
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SCS220KGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 83A
Max. forward impulse current: 310A
Power dissipation: 210W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 83A
Max. forward impulse current: 310A
Power dissipation: 210W
Kind of package: tube
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SCS220KGC17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. load current: 83A
Max. forward impulse current: 310A
Leakage current: 0.4mA
Power dissipation: 210W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. load current: 83A
Max. forward impulse current: 310A
Leakage current: 0.4mA
Power dissipation: 210W
Kind of package: tube
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RSQ030N08HZGTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RSF015N06TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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RSQ015N06TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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RSF015N06FRATL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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BH3548F-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
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2SA2029T2LR |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
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2SA2029T2LQ |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
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RD3S100CNTL1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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UMX18NTN |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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DTDG14GPT100 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
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RUF015N02TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
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BD4933FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BD4933G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BU4933FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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BU4933G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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2SC3838KT146N |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59; SOT346
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2SC3838KT146P |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT346
Current gain: 56...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT346
Current gain: 56...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Kind of transistor: RF
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RHK003N06FRAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SMT3
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RTL035N03TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
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RSQ035N03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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IMD6AT108 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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RB068MM100TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
auf Bestellung 3369 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
219+ | 0.33 EUR |
323+ | 0.22 EUR |
633+ | 0.11 EUR |
RB168MM100TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
230+ | 0.31 EUR |
275+ | 0.26 EUR |
341+ | 0.21 EUR |
625+ | 0.11 EUR |
RK7002AT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
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