Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102213) > Seite 1703 nach 1704
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RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Mounting: SMD Kind of package: reel; tape Case: SOP8 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 36A Gate charge: 11nC On-state resistance: 24mΩ Power dissipation: 2W Gate-source voltage: ±20V Drain current: 9A Kind of channel: enhancement Type of transistor: N-MOSFET |
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| BA7815FP-E2 | ROHM SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1 Kind of package: reel; tape Operating temperature: -40...85°C Case: TO252-3 Mounting: SMD Output voltage: 15V Output current: 1A Voltage drop: 2V Number of channels: 1 Input voltage: 17.5...30V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed |
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RQ3E120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC On-state resistance: 13.8mΩ Power dissipation: 15W Drain current: 27A Pulsed drain current: 48A |
auf Bestellung 2761 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Case: DFN2020-8S Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 17.6mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 32A |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF4E110GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S Case: DFN2020-8S Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 7.4nC On-state resistance: 11.3mΩ Power dissipation: 2W Drain current: 11A Pulsed drain current: 44A |
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| RQ3G100GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 8.4nC On-state resistance: 18.3mΩ Power dissipation: 15W Drain current: 27A Pulsed drain current: 40A |
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| RD3G400GNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC On-state resistance: 9.5mΩ Power dissipation: 26W Drain current: 40A Pulsed drain current: 80A |
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| RD3L08BGNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 71nC On-state resistance: 8.1mΩ Power dissipation: 119W Drain current: 80A Pulsed drain current: 160A |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 165nC On-state resistance: 2.08mΩ Power dissipation: 178W Drain current: 120A Pulsed drain current: 240A |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 175nC On-state resistance: 4.1mΩ Power dissipation: 192W Drain current: 120A Pulsed drain current: 240A |
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| RQ3E080GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 31.2mΩ Power dissipation: 14W Drain current: 18A Pulsed drain current: 32A |
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| RQ3E180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 22.4nC On-state resistance: 6.1mΩ Power dissipation: 20W Drain current: 39A Pulsed drain current: 72A |
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| RQ3G150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24.1nC On-state resistance: 8.9mΩ Power dissipation: 20W Drain current: 39A Pulsed drain current: 60A |
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| RQ3L050GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.3nC On-state resistance: 86mΩ Power dissipation: 14.8W Drain current: 13A Pulsed drain current: 20A |
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| RQ3L090GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24.5nC On-state resistance: 21.4mΩ Power dissipation: 20W Drain current: 30A Pulsed drain current: 36A |
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| RQ5L035GNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 7.3nC On-state resistance: 75mΩ Power dissipation: 1W Drain current: 3.5A Pulsed drain current: 14A |
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| RS1E301GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39.8nC On-state resistance: 3.3mΩ Power dissipation: 33W Drain current: 80A Pulsed drain current: 120A |
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| RS1E321GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42.8nC On-state resistance: 2.9mΩ Power dissipation: 34W Drain current: 80A Pulsed drain current: 128A |
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| RS1L120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 26nC On-state resistance: 19.8mΩ Power dissipation: 27W Drain current: 36A Pulsed drain current: 48A |
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| RS1L145GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 37nC On-state resistance: 14.1mΩ Power dissipation: 31W Drain current: 47A Pulsed drain current: 58A |
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| RS1L180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 63nC On-state resistance: 8.5mΩ Power dissipation: 39W Drain current: 68A Pulsed drain current: 72A |
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| BU7421G-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Input bias current: 1pA Input offset current: 1pA Input offset voltage: 6mV Number of channels: 1 Voltage supply range: 1.7...5.5V DC Slew rate: 50kV/μs Case: SSOP5 |
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| CSL0901WT1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 290mcd LED current: 20mA Wavelength: 587nm LED lens: transparent Front: convex |
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SCS206AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.55V Max. load current: 26A Max. forward impulse current: 90A Power dissipation: 48W Kind of package: reel; tape |
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SCS206AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 21A Max. forward impulse current: 90A Power dissipation: 31W Kind of package: tube |
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| SCS208AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 62W Kind of package: reel; tape Leakage current: 0.16mA |
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SCS205KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 27A Max. forward impulse current: 80A Power dissipation: 88W Kind of package: tube |
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SCS206AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 27A Max. forward impulse current: 90A Power dissipation: 51W Kind of package: tube |
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| SCS206AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 26A Max. forward impulse current: 90A Power dissipation: 48W Kind of package: reel; tape Leakage current: 120µA |
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SCS208AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 36A Max. forward impulse current: 110A Power dissipation: 36W Kind of package: tube |
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SCS208AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.55V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 62W Kind of package: reel; tape |
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SCS208AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.63V Max. load current: 25A Max. forward impulse current: 110A Power dissipation: 34W Kind of package: tube |
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| SML-A12UTT86J | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0605; 100mcd; 20mA; 624nm; Lens: transparent Type of diode: LED LED colour: red Mounting: SMD Case: 0605 Luminosity: 100mcd LED current: 20mA Wavelength: 624nm LED lens: transparent Front: flat |
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| SCT3040KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Pulsed drain current: 137A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| BD4142HFV-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: high Supply voltage: 3...5.5V DC Case: HVSOF5 Operating temperature: -10...100°C Mounting: SMD Threshold on-voltage: 0.5V Number of channels: 1 Kind of package: reel; tape Manufacturer series: BD41 |
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DTC143ZU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
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| DTC143ZEBHZGTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
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| DTC143ZEBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
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| BD5426EFS-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 10W; Amp.class: D Type of integrated circuit: audio amplifier Amplifier class: D Output power: 10W |
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KDZVTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 40µA |
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| PDZVTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 40µA |
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KDZVTFTR3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.9V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 40µA |
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| BD5327G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD53 Kind of package: reel; tape Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.7V Integrated circuit features: ±1% accuracy |
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| BD5327FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD53 Kind of package: reel; tape Kind of RESET output: CMOS Active logical level: low Case: VSOF5 Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.7V Integrated circuit features: ±1% accuracy |
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SML-D12P8WT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: green Mounting: SMD Case: 0603 Luminosity: 2.5...6.3mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 557...563nm LED lens: diffused; white Power: 54mW Front: flat |
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SML-D12P8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: green Mounting: SMD Case: 0603 Luminosity: 2.5...6.3mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ |
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SML-E12P8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.36mm; 20mA Type of diode: LED LED colour: green Mounting: SMD Case: 0603 Luminosity: 2.5...6.3mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.36mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ |
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SCS210AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 44A Max. forward impulse current: 150A Power dissipation: 78W Kind of package: tube |
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| SCS210AJHRTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263AB Max. forward voltage: 1.63V Max. load current: 45A Max. forward impulse current: 150A Power dissipation: 83W Kind of package: reel; tape Leakage current: 0.2mA |
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SCS210KE2C | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 170W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.6V Max. load current: 52A Max. forward impulse current: 160A Power dissipation: 170W Kind of package: tube |
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| SCS210KE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 52A Max. forward impulse current: 170A Power dissipation: 160W Kind of package: tube Leakage current: 0.1mA |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DTA143ZETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTA143ZKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTA143ZU3T106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RRH050P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD Case: SOP8 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -5A Gate charge: 17nC On-state resistance: 50mΩ Power dissipation: 2W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| BA82904YF-CE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Case: SOP8 Operating temperature: -40...125°C Input bias current: 0.1µA Input offset voltage: 9mV Slew rate: 0.2V/μs Voltage supply range: ± 1.5...18V DC; 3...36V DC Number of channels: 2 Input offset current: 50A Bandwidth: 500kHz |
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| SCS220AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 91A Max. forward impulse current: 0.3kA Leakage current: 0.2mA Power dissipation: 160W Kind of package: tube |
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| RR601BM4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| RR601BM4STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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RF01VM2STE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Load current: 0.1A Max. load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 1A Max. off-state voltage: 250V Reverse recovery time: 50ns |
auf Bestellung 2226 Stücke: Lieferzeit 14-21 Tag (e) |
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| RSS090N03FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 36A
Gate charge: 11nC
On-state resistance: 24mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: 9A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Mounting: SMD
Kind of package: reel; tape
Case: SOP8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 36A
Gate charge: 11nC
On-state resistance: 24mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain current: 9A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA7815FP-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: TO252-3
Mounting: SMD
Output voltage: 15V
Output current: 1A
Voltage drop: 2V
Number of channels: 1
Input voltage: 17.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 15V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: TO252-3
Mounting: SMD
Output voltage: 15V
Output current: 1A
Voltage drop: 2V
Number of channels: 1
Input voltage: 17.5...30V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3E120GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.8mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.8mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 48A
auf Bestellung 2761 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 166+ | 0.43 EUR |
| 234+ | 0.31 EUR |
| 500+ | 0.27 EUR |
| RF4E080GNTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Power dissipation: 2W
Drain current: 8A
Pulsed drain current: 32A
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 151+ | 0.48 EUR |
| 228+ | 0.31 EUR |
| 256+ | 0.28 EUR |
| RF4E110GNTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 11.3mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Case: DFN2020-8S
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 11.3mΩ
Power dissipation: 2W
Drain current: 11A
Pulsed drain current: 44A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3G100GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 18.3mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 18.3mΩ
Power dissipation: 15W
Drain current: 27A
Pulsed drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3G400GNTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 9.5mΩ
Power dissipation: 26W
Drain current: 40A
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 80A; 26W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 9.5mΩ
Power dissipation: 26W
Drain current: 40A
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3L08BGNTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 8.1mΩ
Power dissipation: 119W
Drain current: 80A
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 71nC
On-state resistance: 8.1mΩ
Power dissipation: 119W
Drain current: 80A
Pulsed drain current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJ1G12BGNTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 2.08mΩ
Power dissipation: 178W
Drain current: 120A
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 2.08mΩ
Power dissipation: 178W
Drain current: 120A
Pulsed drain current: 240A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJ1L12BGNTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.1mΩ
Power dissipation: 192W
Drain current: 120A
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.1mΩ
Power dissipation: 192W
Drain current: 120A
Pulsed drain current: 240A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3E080GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 31.2mΩ
Power dissipation: 14W
Drain current: 18A
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 31.2mΩ
Power dissipation: 14W
Drain current: 18A
Pulsed drain current: 32A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3E180GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22.4nC
On-state resistance: 6.1mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 72A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 72A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 22.4nC
On-state resistance: 6.1mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 72A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3G150GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.1nC
On-state resistance: 8.9mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.1nC
On-state resistance: 8.9mΩ
Power dissipation: 20W
Drain current: 39A
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RQ3L050GNTB |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.3nC
On-state resistance: 86mΩ
Power dissipation: 14.8W
Drain current: 13A
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.3nC
On-state resistance: 86mΩ
Power dissipation: 14.8W
Drain current: 13A
Pulsed drain current: 20A
Produkt ist nicht verfügbar
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| RQ3L090GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 21.4mΩ
Power dissipation: 20W
Drain current: 30A
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 21.4mΩ
Power dissipation: 20W
Drain current: 30A
Pulsed drain current: 36A
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| RQ5L035GNTCL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1W
Drain current: 3.5A
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1W
Drain current: 3.5A
Pulsed drain current: 14A
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| RS1E301GNTB1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
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| RS1E321GNTB1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42.8nC
On-state resistance: 2.9mΩ
Power dissipation: 34W
Drain current: 80A
Pulsed drain current: 128A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42.8nC
On-state resistance: 2.9mΩ
Power dissipation: 34W
Drain current: 80A
Pulsed drain current: 128A
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| RS1L120GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 19.8mΩ
Power dissipation: 27W
Drain current: 36A
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 19.8mΩ
Power dissipation: 27W
Drain current: 36A
Pulsed drain current: 48A
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| RS1L145GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 14.1mΩ
Power dissipation: 31W
Drain current: 47A
Pulsed drain current: 58A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 14.1mΩ
Power dissipation: 31W
Drain current: 47A
Pulsed drain current: 58A
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| RS1L180GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 8.5mΩ
Power dissipation: 39W
Drain current: 68A
Pulsed drain current: 72A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 8.5mΩ
Power dissipation: 39W
Drain current: 68A
Pulsed drain current: 72A
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| BU7421G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Number of channels: 1
Voltage supply range: 1.7...5.5V DC
Slew rate: 50kV/μs
Case: SSOP5
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; SSOP5; 1.7÷5.5VDC; reel,tape
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Number of channels: 1
Voltage supply range: 1.7...5.5V DC
Slew rate: 50kV/μs
Case: SSOP5
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| CSL0901WT1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 290mcd
LED current: 20mA
Wavelength: 587nm
LED lens: transparent
Front: convex
Category: SMD colour LEDs
Description: LED; yellow; SMD; 290mcd; 20mA; 587nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 290mcd
LED current: 20mA
Wavelength: 587nm
LED lens: transparent
Front: convex
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| SCS206AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
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| SCS206AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 21A
Max. forward impulse current: 90A
Power dissipation: 31W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; 31W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 21A
Max. forward impulse current: 90A
Power dissipation: 31W
Kind of package: tube
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| SCS208AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Leakage current: 0.16mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Leakage current: 0.16mA
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| SCS205KGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 27A
Max. forward impulse current: 80A
Power dissipation: 88W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; 88W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 27A
Max. forward impulse current: 80A
Power dissipation: 88W
Kind of package: tube
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| SCS206AGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 27A
Max. forward impulse current: 90A
Power dissipation: 51W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 27A
Max. forward impulse current: 90A
Power dissipation: 51W
Kind of package: tube
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| SCS206AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Leakage current: 120µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 26A
Max. forward impulse current: 90A
Power dissipation: 48W
Kind of package: reel; tape
Leakage current: 120µA
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| SCS208AGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 110A
Power dissipation: 36W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; 36W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 110A
Power dissipation: 36W
Kind of package: tube
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| SCS208AJTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.55V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 62W
Kind of package: reel; tape
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| SCS208AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.63V
Max. load current: 25A
Max. forward impulse current: 110A
Power dissipation: 34W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; 34W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.63V
Max. load current: 25A
Max. forward impulse current: 110A
Power dissipation: 34W
Kind of package: tube
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| SML-A12UTT86J |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0605; 100mcd; 20mA; 624nm; Lens: transparent
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0605
Luminosity: 100mcd
LED current: 20mA
Wavelength: 624nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0605; 100mcd; 20mA; 624nm; Lens: transparent
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0605
Luminosity: 100mcd
LED current: 20mA
Wavelength: 624nm
LED lens: transparent
Front: flat
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| SCT3040KRC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| BD4142HFV-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: high
Supply voltage: 3...5.5V DC
Case: HVSOF5
Operating temperature: -10...100°C
Mounting: SMD
Threshold on-voltage: 0.5V
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: BD41
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; 3÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: high
Supply voltage: 3...5.5V DC
Case: HVSOF5
Operating temperature: -10...100°C
Mounting: SMD
Threshold on-voltage: 0.5V
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: BD41
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| DTC143ZU3T106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC143ZEBHZGTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC143ZEBTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| BD5426EFS-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 10W; Amp.class: D
Type of integrated circuit: audio amplifier
Amplifier class: D
Output power: 10W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 10W; Amp.class: D
Type of integrated circuit: audio amplifier
Amplifier class: D
Output power: 10W
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| KDZVTR3.9B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 40µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 40µA
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| PDZVTR3.9B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 40µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD128; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 40µA
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| KDZVTFTR3.9B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 40µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; reel,tape; SOD123F; single diode; 40uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 40µA
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| BD5327G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD53
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD53
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
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| BD5327FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD53
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Case: VSOF5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD53
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Case: VSOF5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
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| SML-D12P8WT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: diffused; white
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: diffused; white
Power: 54mW
Front: flat
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| SML-D12P8WT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
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| SML-E12P8WT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.36mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.36mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.36mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.36mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
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| SCS210AGC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 44A
Max. forward impulse current: 150A
Power dissipation: 78W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; 78W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 44A
Max. forward impulse current: 150A
Power dissipation: 78W
Kind of package: tube
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| SCS210AJHRTLL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 45A
Max. forward impulse current: 150A
Power dissipation: 83W
Kind of package: reel; tape
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263AB
Max. forward voltage: 1.63V
Max. load current: 45A
Max. forward impulse current: 150A
Power dissipation: 83W
Kind of package: reel; tape
Leakage current: 0.2mA
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| SCS210KE2C |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 170W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.6V
Max. load current: 52A
Max. forward impulse current: 160A
Power dissipation: 170W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 170W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.6V
Max. load current: 52A
Max. forward impulse current: 160A
Power dissipation: 170W
Kind of package: tube
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| SCS210KE2GC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 52A
Max. forward impulse current: 170A
Power dissipation: 160W
Kind of package: tube
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 52A
Max. forward impulse current: 170A
Power dissipation: 160W
Kind of package: tube
Leakage current: 0.1mA
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| DTA143ZETL |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| DTA143ZKAT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| DTA143ZU3T106 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| RRH050P03GZETB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Case: SOP8
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 17nC
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Case: SOP8
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 17nC
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
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| BA82904YF-CE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...125°C
Input bias current: 0.1µA
Input offset voltage: 9mV
Slew rate: 0.2V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Number of channels: 2
Input offset current: 50A
Bandwidth: 500kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...125°C
Input bias current: 0.1µA
Input offset voltage: 9mV
Slew rate: 0.2V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Number of channels: 2
Input offset current: 50A
Bandwidth: 500kHz
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| SCS220AE2GC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
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| RR601BM4SFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| RR601BM4STL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| RF01VM2STE-17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 1A
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 1A
Max. off-state voltage: 250V
Reverse recovery time: 50ns
auf Bestellung 2226 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 491+ | 0.15 EUR |
| 823+ | 0.087 EUR |
| 1169+ | 0.061 EUR |
| 1217+ | 0.059 EUR |
| 1500+ | 0.056 EUR |














