Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102316) > Seite 1703 nach 1706
Foto | Bezeichnung | Hersteller | Beschreibung |
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SML-D13WWT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 110mcd Viewing angle: 160° LED current: 20mA Wavelength: 587nm LED lens: diffused; white Front: flat |
Produkt ist nicht verfügbar |
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SML-D12Y3WT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 40mcd LED current: 20mA Wavelength: 581nm LED lens: white Front: flat |
Produkt ist nicht verfügbar |
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RSJ650N10TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 130A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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RB400VAM-50TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
Produkt ist nicht verfügbar |
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RB400DT146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SC59; SOT346 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
Produkt ist nicht verfügbar |
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RB400VYM-50FHTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BD5240G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD52 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 4V Kind of integrated circuit: voltage detector Case: SSOP5 |
Produkt ist nicht verfügbar |
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SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
Produkt ist nicht verfügbar |
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SCT3030ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
Produkt ist nicht verfügbar |
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SCT3030ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247-4 Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
Produkt ist nicht verfügbar |
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SCT3030AW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 267W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 650V Case: TO263-7 Gate charge: 104nC Mounting: SMD Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
Produkt ist nicht verfügbar |
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SCT3030KLGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
Produkt ist nicht verfügbar |
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SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W On-state resistance: 39mΩ Drain current: 72A Power dissipation: 339W Polarisation: unipolar Kind of package: tube Drain-source voltage: 1.2kV Case: TO247 Gate charge: 131nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 180A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
RB055LAM-40TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 40V Max. forward voltage: 0.62V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
RB055LAM-30TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
RB055LAM-30TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 55A Leakage current: 50µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
RB055LAM-60TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape Case: SOD128 Max. off-state voltage: 60V Max. forward voltage: 0.68V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 70µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
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RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 13A Power dissipation: 23W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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RGT50NS65DGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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BD5360FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: VSOF5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 6V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
Produkt ist nicht verfügbar |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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IMD3AT108 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
SML-D15YWT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 224mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat |
Produkt ist nicht verfügbar |
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SML-D11YWT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 4mcd LED current: 2mA Wavelength: 588nm LED lens: white Front: flat |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SML-D14YWT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 200mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SML-D15YWT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 224mcd LED current: 20mA Wavelength: 590nm LED lens: diffused; white Front: flat Case: 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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SH8M41TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1691 Stücke: Lieferzeit 14-21 Tag (e) |
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BD46291G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: Counter Timer Built-in Kind of package: reel; tape Threshold on-voltage: 2.9V Manufacturer series: BD46 Kind of integrated circuit: voltage detector |
Produkt ist nicht verfügbar |
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BR24T256F-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8 Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BR24T256FJ-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
Produkt ist nicht verfügbar |
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BR24T256FVT-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: TSSOP-B8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
DTA043EUBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Mounting: SMD Case: SOT323F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
DTA043ZUBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT323F |
Produkt ist nicht verfügbar |
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DTC143ZEBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC143ZETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC143ZEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
SCT3105KRC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 60A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 137mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BD5228FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: VSOF5 |
Produkt ist nicht verfügbar |
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BD5228G-2MTR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 800mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BD5228G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.8V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
DTC143ZMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
RB715UMFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape Type of diode: Schottky rectifying Case: UMD3F Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: common cathode; double Max. forward voltage: 0.37V Leakage current: 1µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 68 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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EM6M2T2R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.2/-0.2A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8/±10V On-state resistance: 1/1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.4A Version: ESD |
auf Bestellung 4700 Stücke: Lieferzeit 14-21 Tag (e) |
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RN731VTE-17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.4pF |
Produkt ist nicht verfügbar |
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RN771VTE-17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF |
Produkt ist nicht verfügbar |
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RSX101VAM30TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape Mounting: SMD Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.47V Semiconductor structure: single diode Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward impulse current: 5A |
auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
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BU4224F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.4V Manufacturer series: BU42 Kind of integrated circuit: voltage detector Mounting: SMD Case: SOP4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BU4224G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.4V Manufacturer series: BU42 Kind of integrated circuit: voltage detector Mounting: SMD Case: SSOP5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Case: SOP8 Drain-source voltage: -30V Drain current: -10A On-state resistance: 12.6mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 39nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD |
Produkt ist nicht verfügbar |
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RRL035P03TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -14A Case: SOT363 Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -14A Case: SOT363 Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SML-P11MTT86R | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW Power: 54mW LED colour: yellow green Type of diode: LED Wavelength: 466...574nm LED lens: transparent Luminosity: 1...2.1mcd LED current: 1mA Dimensions: 1x0.6x0.2mm Manufacturer series: PicoLED™ Front: flat Mounting: SMD Case: 0402 Operating voltage: 1.9V DC |
auf Bestellung 3443 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8M10FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8M21FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8M6FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5/-3.5A Pulsed drain current: 14...20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 82/165mΩ Mounting: SMD Gate charge: 3.9/5.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8M8FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.5A Pulsed drain current: 18...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 47/90mΩ Mounting: SMD Gate charge: 7.2/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SML-D13WWT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 110mcd
Viewing angle: 160°
LED current: 20mA
Wavelength: 587nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 110mcd; 160°; 20mA; 587nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 110mcd
Viewing angle: 160°
LED current: 20mA
Wavelength: 587nm
LED lens: diffused; white
Front: flat
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SML-D12Y3WT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 40mcd
LED current: 20mA
Wavelength: 581nm
LED lens: white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 40mcd; 20mA; 581nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 40mcd
LED current: 20mA
Wavelength: 581nm
LED lens: white
Front: flat
Produkt ist nicht verfügbar
Im Einkaufswagen
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RSJ650N10TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RB400VAM-50TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
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RB400DT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB400VYM-50FHTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD5240G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD52
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4V
Kind of integrated circuit: voltage detector
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD52
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 4V
Kind of integrated circuit: voltage detector
Case: SSOP5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 650V
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 650V
Case: TO263-7
Gate charge: 104nC
Mounting: SMD
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
On-state resistance: 39mΩ
Drain current: 70A
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 650V
Case: TO263-7
Gate charge: 104nC
Mounting: SMD
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 175A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030KLGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030KLHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
On-state resistance: 39mΩ
Drain current: 72A
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Drain-source voltage: 1.2kV
Case: TO247
Gate charge: 131nC
Mounting: THT
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB055LAM-40TFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB055LAM-30TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB055LAM-30TFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 55A
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB055LAM-60TFTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 3A; reel,tape
Case: SOD128
Max. off-state voltage: 60V
Max. forward voltage: 0.68V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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RGT50NS65DGC9 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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RGT50TM65DGC9 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 13A
Power dissipation: 23W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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RGT50NS65DGTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
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BD5360FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: VSOF5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: VSOF5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 6V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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RF4E100AJTCR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.70 EUR |
113+ | 0.63 EUR |
205+ | 0.35 EUR |
216+ | 0.33 EUR |
IMD3AT108 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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SML-D15YWT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
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SML-D11YWT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 4mcd
LED current: 2mA
Wavelength: 588nm
LED lens: white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 4mcd; 2mA; 588nm; Lens: white; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 4mcd
LED current: 2mA
Wavelength: 588nm
LED lens: white
Front: flat
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SML-D14YWT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 200mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 200mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 200mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
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SML-D15YWT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Case: 0603
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 224mcd; 20mA; 590nm; Lens: white,diffused
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 224mcd
LED current: 20mA
Wavelength: 590nm
LED lens: diffused; white
Front: flat
Case: 0603
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SH8M41TB1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.45 EUR |
40+ | 1.81 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
BD46291G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD46
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD46
Kind of integrated circuit: voltage detector
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BR24T256F-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24T256FJ-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24T256FVT-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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DTA043EUBTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
Case: SOT323F
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
Case: SOT323F
Produkt ist nicht verfügbar
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DTA043ZUBTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323F
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323F; R1: 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323F
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DTC143ZEBTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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DTC143ZETL |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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DTC143ZEFRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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RSH070P05GZETB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSH070P05TB1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT3105KRC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 137mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 137mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BD5228FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
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BD5228G-2MTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Produkt ist nicht verfügbar
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BD5228G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.8V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
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DTC143ZMFHAT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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RB715UMFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: UMD3F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common cathode; double
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; UMD3F; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: UMD3F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common cathode; double
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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DTC144EMFHAT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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EM6M2T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.4A
Version: ESD
auf Bestellung 4700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
272+ | 0.26 EUR |
353+ | 0.20 EUR |
532+ | 0.13 EUR |
RN731VTE-17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
Produkt ist nicht verfügbar
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RN771VTE-17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Produkt ist nicht verfügbar
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RSX101VAM30TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Semiconductor structure: single diode
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 30V; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Semiconductor structure: single diode
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
353+ | 0.20 EUR |
490+ | 0.15 EUR |
1060+ | 0.07 EUR |
1122+ | 0.06 EUR |
BU4224F-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SOP4
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SOP4
Produkt ist nicht verfügbar
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BU4224G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.4V
Manufacturer series: BU42
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
Produkt ist nicht verfügbar
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RRS100P03HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Case: SOP8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Case: SOP8
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 12.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Produkt ist nicht verfügbar
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RRL035P03TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Produkt ist nicht verfügbar
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RRL035P03FRATR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -14A
Case: SOT363
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
Produkt ist nicht verfügbar
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SML-P11MTT86R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW
Power: 54mW
LED colour: yellow green
Type of diode: LED
Wavelength: 466...574nm
LED lens: transparent
Luminosity: 1...2.1mcd
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Manufacturer series: PicoLED™
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 1.9V DC
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1x0.6x0.2mm; 1mA; 54mW
Power: 54mW
LED colour: yellow green
Type of diode: LED
Wavelength: 466...574nm
LED lens: transparent
Luminosity: 1...2.1mcd
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Manufacturer series: PicoLED™
Front: flat
Mounting: SMD
Case: 0402
Operating voltage: 1.9V DC
auf Bestellung 3443 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
257+ | 0.28 EUR |
496+ | 0.14 EUR |
667+ | 0.11 EUR |
705+ | 0.10 EUR |
SP8M10FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8M21FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8M6FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SP8M8FRATB |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH