Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (106352) > Seite 1755 nach 1773
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BU4809G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Case: SSOP5 Mounting: SMD Manufacturer series: BU48 Operating temperature: -40...125°C Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC Threshold on-voltage: 0.9V Number of channels: 1 Integrated circuit features: ±1% accuracy Type of integrated circuit: supervisor circuit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 1mA |
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
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UMF28NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.15/0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68...390 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Mounting: THT Case: TO247 Kind of package: tube Power dissipation: 370W Pulsed drain current: 90A Gate charge: 74nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 143mΩ |
auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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RRQ030P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RSR025P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 5.4nC On-state resistance: 0.16Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 3.7nC On-state resistance: 98mΩ Power dissipation: 0.8W Gate-source voltage: ±12V Kind of channel: enhancement |
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| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 4.4nC On-state resistance: 0.2Ω Power dissipation: 1.25W Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 2.9nC On-state resistance: 0.118Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Power dissipation: 1.25W Gate charge: 6.4nC Polarisation: unipolar Drain current: -2.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.19Ω Mounting: SMD Pulsed drain current: -10A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Power dissipation: 1W Gate charge: 7nC Polarisation: unipolar Drain current: -2.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.16Ω Mounting: SMD Pulsed drain current: -10A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 5A Drain current: 2.5A Gate charge: 5nC On-state resistance: 0.16Ω Power dissipation: 0.8W Gate-source voltage: ±10V Kind of channel: enhancement |
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Leakage current: 0.2mA Type of diode: Schottky rectifying Max. forward impulse current: 50A Max. forward voltage: 0.53V |
auf Bestellung 677 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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RB068L100DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 110A Kind of package: reel; tape Leakage current: 3µA |
auf Bestellung 1417 Stücke: Lieferzeit 14-21 Tag (e) |
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RFN2L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A Type of diode: rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 40A Kind of package: reel; tape Reverse recovery time: 35ns |
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
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RBR1L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 30A Kind of package: reel; tape |
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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2SD2351T106W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 820...2700 Kind of package: reel; tape Frequency: 250MHz Collector current: 0.15A |
auf Bestellung 2179 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS16HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
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BAS16HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Kind of package: reel; tape Case: SOP8 On-state resistance: 18.9mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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BC858BWT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. load current: 0.5A Power dissipation: 0.25W Kind of package: reel; tape Max. forward impulse current: 4A |
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. load current: 0.5A Power dissipation: 0.25W Kind of package: reel; tape Max. forward impulse current: 4A |
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1SS390SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape Type of diode: switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape |
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| DTC123JMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
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| MSL0104RGBW1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat Mounting: SMD LED colour: blue; green; red LED lens: diffused; white Front: flat Type of diode: LED LED current: 20mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 2.2nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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IMX1T110 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.3W Case: SC74; SOT457 Mounting: SMD Frequency: 180MHz Current gain: 120...560 Kind of package: reel; tape |
auf Bestellung 2296 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS63AT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23 Mounting: SMD Frequency: 200MHz Polarisation: bipolar Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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KDZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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RB751V-40TE17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DAN202KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SC59; SOT346 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 5960 Stücke: Lieferzeit 14-21 Tag (e) |
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| DAN202UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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| DAN202UMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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RK7002BMT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 200/350mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 593 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDZVTFTR27B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 27V; SMD; SOD128; reel,tape; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Mounting: SMD Case: SOD128 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -70A Pulsed drain current: -140A Power dissipation: 101W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BA4584FV-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 4; ±2÷16VDC,4÷32VDC; 3mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Mounting: SMT Input offset voltage: 3mV Slew rate: 5V/μs Operating temperature: -40...85°C Integrated circuit features: low noise Input bias current: 0.5µA Voltage supply range: ± 2...16V DC; 4...32V DC Kind of package: reel; tape Input offset current: 200nA Case: SSOP-B14 Number of channels: quad; 4 |
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SML-E12UWT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW Type of diode: LED LED colour: red Mounting: SMD Case - inch: 0603 Case - mm: 1608 Luminosity: 36...85mcd Operating voltage: 2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 619...629nm LED lens: diffused; white Power: 62mW Front: flat |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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EMT1T2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Current gain: 120...560 Frequency: 140MHz Collector current: 0.15A Collector-emitter voltage: 50V |
auf Bestellung 3190 Stücke: Lieferzeit 14-21 Tag (e) |
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EM6K6T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 300mA; Idm: 0.6A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.3A Pulsed drain current: 0.6A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 7850 Stücke: Lieferzeit 14-21 Tag (e) |
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EM6M2T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.2/-0.2A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±8/±10V On-state resistance: 1/1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 0.4A Kind of transistor: complementary pair |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Mounting: SMD Max. off-state voltage: 90V Max. forward impulse current: 0.5A Max. forward voltage: 1.2V Features of semiconductor devices: fast switching Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1µA Case: SC79; SOD523 Capacitance: 3pF Type of diode: switching Reverse recovery time: 4ns |
auf Bestellung 6416 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Kind of package: reel; tape Max. load current: 225mA Case: SC79; SOD523 Reverse recovery time: 4ns |
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1SS400CMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Kind of package: reel; tape Max. load current: 225mA Case: SOD923 Reverse recovery time: 4ns |
auf Bestellung 7037 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RGS60TS65DHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
| BU4809G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| RB050L-40DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RB058L-40DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Produkt ist nicht verfügbar
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| RB068L-40DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Produkt ist nicht verfügbar
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| UMF28NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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| RV2C010UNT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| R6030JNZ4C13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 370W
Pulsed drain current: 90A
Gate charge: 74nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 370W
Pulsed drain current: 90A
Gate charge: 74nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 143mΩ
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
| RRQ030P03FRATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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| RSR025P03FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| RTF025N03FRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RSQ025P03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| RSR025N03FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| RTQ025P02FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Power dissipation: 1.25W
Gate charge: 6.4nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: -10A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Power dissipation: 1.25W
Gate charge: 6.4nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.19Ω
Mounting: SMD
Pulsed drain current: -10A
Produkt ist nicht verfügbar
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| RTR025P02FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Power dissipation: 1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.16Ω
Mounting: SMD
Pulsed drain current: -10A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Power dissipation: 1W
Gate charge: 7nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.16Ω
Mounting: SMD
Pulsed drain current: -10A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| RUF025N02FRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RBR5L40ADDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.53V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.53V
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
| RB068L100DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
auf Bestellung 1417 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2L6SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFN1L6SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RBR1L40ADDTE25 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RF201L2SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RBR2L60BDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| RBR3L40ADDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RBR3L60BDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RF101L2SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB050L-60DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| RRL035P03FRATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSQ035N03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| RSQ035P03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| 2SD2351T106W |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 820...2700
Kind of package: reel; tape
Frequency: 250MHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 820...2700
Kind of package: reel; tape
Frequency: 250MHz
Collector current: 0.15A
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS16HYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16HYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RSS100N03HZGTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18.9mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18.9mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BC858BWT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV99HYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. forward impulse current: 4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BAV99HYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. forward impulse current: 4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
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| 1SS390SMFHT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| DTC123JMFHAT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Produkt ist nicht verfügbar
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| MSL0104RGBW1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| RSQ020N03HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 2.2nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 2.2nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| IMX1T110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Mounting: SMD
Frequency: 180MHz
Current gain: 120...560
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Mounting: SMD
Frequency: 180MHz
Current gain: 120...560
Kind of package: reel; tape
auf Bestellung 2296 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS63AT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| KDZVTR5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| RB751V-40TE17 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| DAN202KT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 5960 Stücke:
Lieferzeit 14-21 Tag (e)
| DAN202UMFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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| DAN202UMTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| RK7002BMT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 593 Stücke:
Lieferzeit 14-21 Tag (e)
| PDZVTFTR27B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; SOD128; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 27V; SMD; SOD128; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| RD3G07BATTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -70A
Pulsed drain current: -140A
Power dissipation: 101W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -70A
Pulsed drain current: -140A
Power dissipation: 101W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BA4584FV-E2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; ±2÷16VDC,4÷32VDC; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Mounting: SMT
Input offset voltage: 3mV
Slew rate: 5V/μs
Operating temperature: -40...85°C
Integrated circuit features: low noise
Input bias current: 0.5µA
Voltage supply range: ± 2...16V DC; 4...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SSOP-B14
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; ±2÷16VDC,4÷32VDC; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Mounting: SMT
Input offset voltage: 3mV
Slew rate: 5V/μs
Operating temperature: -40...85°C
Integrated circuit features: low noise
Input bias current: 0.5µA
Voltage supply range: ± 2...16V DC; 4...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SSOP-B14
Number of channels: quad; 4
Produkt ist nicht verfügbar
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| SML-E12UWT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Luminosity: 36...85mcd
Operating voltage: 2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 619...629nm
LED lens: diffused; white
Power: 62mW
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Luminosity: 36...85mcd
Operating voltage: 2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 619...629nm
LED lens: diffused; white
Power: 62mW
Front: flat
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| EMT1T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 120...560
Frequency: 140MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 120...560
Frequency: 140MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
| EM6K6T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 300mA; Idm: 0.6A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 300mA; Idm: 0.6A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 7850 Stücke:
Lieferzeit 14-21 Tag (e)
| EM6M2T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 0.4A
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.2/-0.2A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±8/±10V
On-state resistance: 1/1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 0.4A
Kind of transistor: complementary pair
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SS400SMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Mounting: SMD
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Max. forward voltage: 1.2V
Features of semiconductor devices: fast switching
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SC79; SOD523
Capacitance: 3pF
Type of diode: switching
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Mounting: SMD
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Max. forward voltage: 1.2V
Features of semiconductor devices: fast switching
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SC79; SOD523
Capacitance: 3pF
Type of diode: switching
Reverse recovery time: 4ns
auf Bestellung 6416 Stücke:
Lieferzeit 14-21 Tag (e)
| 1SS400SMFHT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Max. load current: 225mA
Case: SC79; SOD523
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Max. load current: 225mA
Case: SC79; SOD523
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1SS400CMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Max. load current: 225mA
Case: SOD923
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Max. load current: 225mA
Case: SOD923
Reverse recovery time: 4ns
auf Bestellung 7037 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX84C3V3LYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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