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RPM841-H11E2A RPM841-H11E2A Rohm Semiconductor Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Produkt ist nicht verfügbar
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RPM872-H14E2A RPM872-H14E2A Rohm Semiconductor RPM872-H14.pdf Description: MODULE IRDA 115.2KBPS 8SMD
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RQ1E050RPTR RQ1E050RPTR Rohm Semiconductor datasheet?p=RQ1E050RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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RRR015P03TL RRR015P03TL Rohm Semiconductor RRR015P03.pdf Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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RRR040P03TL RRR040P03TL Rohm Semiconductor Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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RSR020N06TL RSR020N06TL Rohm Semiconductor rsr020n06-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RW1A020ZPT2R RW1A020ZPT2R Rohm Semiconductor datasheet?p=RW1A020ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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RZF020P01TL RZF020P01TL Rohm Semiconductor datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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RZR020P01TL RZR020P01TL Rohm Semiconductor Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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SST3904T116 SST3904T116 Rohm Semiconductor datasheet?p=SST3904&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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SST3906T116 SST3906T116 Rohm Semiconductor datasheet?p=SST3906&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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STZ6.8TT146 STZ6.8TT146 Rohm Semiconductor stz6.8t.pdf Description: DIODE ZENER ARRAY 6.8V SMD3
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TDZTR10 TDZTR10 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 10V 500MW TUMD2
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TDZTR11 TDZTR11 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 11V 500MW TUMD2
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TDZTR12 TDZTR12 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 12V 500MW TUMD2
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TDZTR13 TDZTR13 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 13V 500MW TUMD2
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TDZTR15 TDZTR15 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 15V 500MW TUMD2
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TDZTR16 TDZTR16 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 16V 500MW TUMD2
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TDZTR18 TDZTR18 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 18V 500MW TUMD2
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TDZTR20 TDZTR20 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 20V 500MW TUMD2
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TDZTR22 TDZTR22 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 22V 500MW TUMD2
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TDZTR24 TDZTR24 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 24V 500MW TUMD2
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TDZTR27 TDZTR27 Rohm Semiconductor tdztr10-e Description: DIODE ZENER 27V 500MW TUMD2
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TDZTR30 TDZTR30 Rohm Semiconductor tdz30.pdf Description: DIODE ZENER 30V 500MW TUMD2
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TDZTR5.1 TDZTR5.1 Rohm Semiconductor datasheet?p=TDZ5.1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.1V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
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TDZTR5.6 TDZTR5.6 Rohm Semiconductor datasheet?p=TDZ5.6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V
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TDZTR6.2 TDZTR6.2 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 6.2V 500MW TUMD2
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TDZTR6.8 TDZTR6.8 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 6.8V 500MW TUMD2
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TDZTR7.5 TDZTR7.5 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 7.5V 500MW TUMD2
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TDZTR8.2 TDZTR8.2 Rohm Semiconductor tdz10.pdf Description: DIODE ZENER 8.2V 500MW TUMD2
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UDZSTE-172.0B UDZSTE-172.0B Rohm Semiconductor udzs_B_Series.pdf Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Part Status: Not For New Designs
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 V
Produkt ist nicht verfügbar
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UDZTE-175.6B UDZTE-175.6B Rohm Semiconductor udz_series_datasheet.pdf Description: DIODE ZENER 5.6V 200MW UMD2
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UDZTE-178.2B UDZTE-178.2B Rohm Semiconductor udz_series_datasheet.pdf Description: DIODE ZENER 8.2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
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UMA1NTR UMA1NTR Rohm Semiconductor datasheet?p=UMA1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT5
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UMA3NTR UMA3NTR Rohm Semiconductor datasheet?p=UMA3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT5
Part Status: Active
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UMA4NTR UMA4NTR Rohm Semiconductor datasheet?p=UMA4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
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UMA5NTR UMA5NTR Rohm Semiconductor datasheet?p=UMA5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT5
Part Status: Active
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UMB3NTN UMB3NTN Rohm Semiconductor emb3t2r-e.pdf Description: TRANS PREBIAS DUAL PNP UMT6
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UMD4NTR UMD4NTR Rohm Semiconductor emd4.pdf Description: TRANS NPN/PNP PREBIAS UMT6
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UMD5NTR UMD5NTR Rohm Semiconductor datasheet?p=UMD5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW, 120mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: UMT6
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UMH5NTR UMH5NTR Rohm Semiconductor datasheet?p=IMH5A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
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UMH8NTR UMH8NTR Rohm Semiconductor imh8at108-e.pdf Description: TRANS 2NPN PREBIAS 0.15W UMT6
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UML2NTR UML2NTR Rohm Semiconductor datasheet?p=UML2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 0.15A UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT5
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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UMN10NTR UMN10NTR Rohm Semiconductor datasheet?p=UMN10N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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UMN11NTN UMN11NTN Rohm Semiconductor datasheet?p=UMN11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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UMP11NTN UMP11NTN Rohm Semiconductor datasheet?p=UMP11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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UMP1NTR UMP1NTR Rohm Semiconductor datasheet?p=UMP1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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UMR12NTN UMR12NTN Rohm Semiconductor datasheet?p=UMR12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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US6J11TR US6J11TR Rohm Semiconductor datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
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US6M11TR US6M11TR Rohm Semiconductor datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
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VDZT2R11B VDZT2R11B Rohm Semiconductor vdz11b.pdf Description: DIODE ZENER 11V 100MW VMD2
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VDZT2R12B VDZT2R12B Rohm Semiconductor vdz12b.pdf Description: DIODE ZENER 12V 100MW VMD2
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VDZT2R16B VDZT2R16B Rohm Semiconductor vdzt2r16b-e Description: DIODE ZENER 16V 100MW VMD2
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VDZT2R18B VDZT2R18B Rohm Semiconductor vdz18b.pdf Description: DIODE ZENER 18V 100MW VMD2
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VDZT2R20B VDZT2R20B Rohm Semiconductor vdz20b.pdf Description: DIODE ZENER 20V 100MW VMD2
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VDZT2R27B VDZT2R27B Rohm Semiconductor vdzt2r27b-e Description: DIODE ZENER 27V 100MW VMD2
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VDZT2R30B VDZT2R30B Rohm Semiconductor datasheet?p=VDZ30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 30V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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VDZT2R33B VDZT2R33B Rohm Semiconductor vdz33b.pdf Description: DIODE ZENER 33V 100MW VMD2
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VDZT2R36B VDZT2R36B Rohm Semiconductor vdzt2r36b-e Description: DIODE ZENER 36V 100MW VMD2
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VDZT2R3.6B VDZT2R3.6B Rohm Semiconductor vdz3.6b.pdf Description: DIODE ZENER 3.6V 100MW VMD2
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RPM841-H11E2A
RPM841-H11E2A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Produkt ist nicht verfügbar
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RPM872-H14E2A RPM872-H14.pdf
RPM872-H14E2A
Hersteller: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 8SMD
Produkt ist nicht verfügbar
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RQ1E050RPTR datasheet?p=RQ1E050RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1E050RPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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RRR015P03TL RRR015P03.pdf
RRR015P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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RRR040P03TL
RRR040P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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RSR020N06TL rsr020n06-e.pdf
RSR020N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RW1A020ZPT2R datasheet?p=RW1A020ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW1A020ZPT2R
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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RZF020P01TL datasheet?p=RZF020P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZF020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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13+1.41 EUR
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RZR020P01TL
RZR020P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
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14+1.34 EUR
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SST3904T116 datasheet?p=SST3904&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SST3904T116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 23985 Stücke:
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36+0.49 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
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SST3906T116 datasheet?p=SST3906&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SST3906T116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 17991 Stücke:
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42+0.42 EUR
69+0.26 EUR
111+0.16 EUR
500+0.12 EUR
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STZ6.8TT146 stz6.8t.pdf
STZ6.8TT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V SMD3
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TDZTR10 tdz10.pdf
TDZTR10
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 500MW TUMD2
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TDZTR11 tdz10.pdf
TDZTR11
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 500MW TUMD2
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TDZTR12 tdz10.pdf
TDZTR12
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW TUMD2
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TDZTR13 tdz10.pdf
TDZTR13
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 500MW TUMD2
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TDZTR15 tdz10.pdf
TDZTR15
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW TUMD2
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TDZTR16 tdz10.pdf
TDZTR16
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2
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TDZTR18 tdz10.pdf
TDZTR18
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
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TDZTR20 tdz10.pdf
TDZTR20
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW TUMD2
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TDZTR22 tdz10.pdf
TDZTR22
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 500MW TUMD2
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TDZTR24 tdz10.pdf
TDZTR24
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2
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TDZTR27 tdztr10-e
TDZTR27
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 500MW TUMD2
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TDZTR30 tdz30.pdf
TDZTR30
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 500MW TUMD2
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TDZTR5.1 datasheet?p=TDZ5.1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TDZTR5.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
Produkt ist nicht verfügbar
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TDZTR5.6 datasheet?p=TDZ5.6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TDZTR5.6
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V
Produkt ist nicht verfügbar
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TDZTR6.2 tdz10.pdf
TDZTR6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2
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TDZTR6.8 tdz10.pdf
TDZTR6.8
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 500MW TUMD2
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TDZTR7.5 tdz10.pdf
TDZTR7.5
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 500MW TUMD2
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TDZTR8.2 tdz10.pdf
TDZTR8.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 500MW TUMD2
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UDZSTE-172.0B udzs_B_Series.pdf
UDZSTE-172.0B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Part Status: Not For New Designs
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 V
Produkt ist nicht verfügbar
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UDZTE-175.6B udz_series_datasheet.pdf
UDZTE-175.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 200MW UMD2
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UDZTE-178.2B udz_series_datasheet.pdf
UDZTE-178.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
auf Bestellung 2312 Stücke:
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38+0.48 EUR
56+0.32 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.15 EUR
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UMA1NTR datasheet?p=UMA1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA1NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
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UMA3NTR datasheet?p=UMA3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA3NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT5
Part Status: Active
auf Bestellung 214 Stücke:
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25+0.70 EUR
36+0.50 EUR
100+0.25 EUR
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UMA4NTR datasheet?p=UMA4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA4NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
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UMA5NTR datasheet?p=UMA5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMA5NTR
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT5
Part Status: Active
auf Bestellung 2380 Stücke:
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Anzahl Preis
36+0.49 EUR
51+0.35 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.12 EUR
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UMB3NTN emb3t2r-e.pdf
UMB3NTN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
auf Bestellung 880 Stücke:
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Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.26 EUR
500+0.17 EUR
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UMD4NTR emd4.pdf
UMD4NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS UMT6
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31+0.58 EUR
40+0.44 EUR
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UMD5NTR datasheet?p=UMD5N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD5NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW, 120mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: UMT6
auf Bestellung 1079 Stücke:
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Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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UMH5NTR datasheet?p=IMH5A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH5NTR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
Produkt ist nicht verfügbar
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UMH8NTR imh8at108-e.pdf
UMH8NTR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
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UML2NTR datasheet?p=UML2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UML2NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT5
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 797 Stücke:
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Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
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UMN10NTR datasheet?p=UMN10N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMN10NTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
14+1.28 EUR
23+0.80 EUR
100+0.52 EUR
500+0.39 EUR
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UMN11NTN datasheet?p=UMN11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMN11NTN
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 14400 Stücke:
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Anzahl Preis
16+1.13 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
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UMP11NTN datasheet?p=UMP11N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMP11NTN
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 24423 Stücke:
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Anzahl Preis
17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.28 EUR
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UMP1NTR datasheet?p=UMP1N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMP1NTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 5860 Stücke:
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Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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UMR12NTN datasheet?p=UMR12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMR12NTN
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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Anzahl Preis
17+1.09 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
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US6J11TR datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6J11TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 5885 Stücke:
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Anzahl Preis
17+1.04 EUR
20+0.88 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.39 EUR
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US6M11TR datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6M11TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 9635 Stücke:
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Anzahl Preis
12+1.57 EUR
21+0.84 EUR
100+0.50 EUR
500+0.37 EUR
1000+0.33 EUR
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VDZT2R11B vdz11b.pdf
VDZT2R11B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 100MW VMD2
auf Bestellung 12401 Stücke:
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VDZT2R12B vdz12b.pdf
VDZT2R12B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 100MW VMD2
auf Bestellung 15141 Stücke:
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VDZT2R16B vdzt2r16b-e
VDZT2R16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 100MW VMD2
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VDZT2R18B vdz18b.pdf
VDZT2R18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 100MW VMD2
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VDZT2R20B vdz20b.pdf
VDZT2R20B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 100MW VMD2
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VDZT2R27B vdzt2r27b-e
VDZT2R27B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 100MW VMD2
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VDZT2R30B datasheet?p=VDZ30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VDZT2R30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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VDZT2R33B vdz33b.pdf
VDZT2R33B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 100MW VMD2
auf Bestellung 15769 Stücke:
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VDZT2R36B vdzt2r36b-e
VDZT2R36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 100MW VMD2
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VDZT2R3.6B vdz3.6b.pdf
VDZT2R3.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.6V 100MW VMD2
auf Bestellung 6385 Stücke:
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