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R6024ENZM12C8 R6024ENZM12C8 Rohm Semiconductor r6024enzc17-e.pdf Description: MOSFET N-CH 600V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
R6024ENZ4C13 R6024ENZ4C13 Rohm Semiconductor datasheet?p=R6024ENZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Power Dissipation (Max): 245W (Tc)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
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R6024KNZ4C13 R6024KNZ4C13 Rohm Semiconductor datasheet?p=R6024KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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MNR18ERAPJ513 MNR18ERAPJ513 Rohm Semiconductor Description: RES ARRAY 8 RES 51K OHM 1606
auf Bestellung 2864 Stücke:
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BD9E303EFJ-LBH2 BD9E303EFJ-LBH2 Rohm Semiconductor datasheet?p=BD9E303EFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
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2SCR553RTL 2SCR553RTL Rohm Semiconductor datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2SCR553RTL 2SCR553RTL Rohm Semiconductor datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 2233 Stücke:
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2SCR553PFRAT100 2SCR553PFRAT100 Rohm Semiconductor datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2SCR553PFRAT100 2SCR553PFRAT100 Rohm Semiconductor datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
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2SAR512P5T100 2SAR512P5T100 Rohm Semiconductor 2sar512p5t100-e.pdf Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 2000 Stücke:
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2SAR512P5T100 2SAR512P5T100 Rohm Semiconductor 2sar512p5t100-e.pdf Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 2630 Stücke:
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2SAR512PFRAT100 2SAR512PFRAT100 Rohm Semiconductor 2sar512pfra-e.pdf Description: PNP DRIVER TRANSISTOR (CORRESPON
Produkt ist nicht verfügbar
2SAR512PFRAT100 2SAR512PFRAT100 Rohm Semiconductor 2sar512pfra-e.pdf Description: PNP DRIVER TRANSISTOR (CORRESPON
auf Bestellung 775 Stücke:
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BD733L2FP-CE2 BD733L2FP-CE2 Rohm Semiconductor datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 18000 Stücke:
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BD733L2FP-CE2 BD733L2FP-CE2 Rohm Semiconductor datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 19077 Stücke:
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10+ 2.91 EUR
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1000+ 1.59 EUR
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BD733L5FP-CE2 BD733L5FP-CE2 Rohm Semiconductor datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 500MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 2000 Stücke:
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2000+1.85 EUR
Mindestbestellmenge: 2000
BD733L5FP-CE2 BD733L5FP-CE2 Rohm Semiconductor datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 4740 Stücke:
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5+4.05 EUR
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100+ 2.92 EUR
250+ 2.74 EUR
500+ 2.4 EUR
1000+ 1.99 EUR
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BD733L2FP3-EVK-301 BD733L2FP3-EVK-301 Rohm Semiconductor datasheet?p=BD733L2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Produkt ist nicht verfügbar
RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RB218NS200TL RB218NS200TL Rohm Semiconductor datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 613 Stücke:
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RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
Produkt ist nicht verfügbar
RB521G-40FHT2R RB521G-40FHT2R Rohm Semiconductor rb521g-40fht2r-e.pdf Description: SCHOTTKY BARRIER DIODE AEC-Q101
auf Bestellung 7748 Stücke:
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SH8KA4TB SH8KA4TB Rohm Semiconductor SOP8_TB_taping.pdf Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 41573 Stücke:
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QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2280 Stücke:
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SH8KA2GZETB SH8KA2GZETB Rohm Semiconductor Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2907 Stücke:
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SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
SH8KA7GZETB SH8KA7GZETB Rohm Semiconductor sh8ka7gzetb-e.pdf Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
QH8KA2TCR QH8KA2TCR Rohm Semiconductor datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2280 Stücke:
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SH8KA4TB1 SH8KA4TB1 Rohm Semiconductor datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Produkt ist nicht verfügbar
2SK2463T100 2SK2463T100 Rohm Semiconductor 2SK2463.pdf Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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BU7233YF-CGE2 BU7233YF-CGE2 Rohm Semiconductor datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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BAS21VMFHTE-17 BAS21VMFHTE-17 Rohm Semiconductor datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS18VUA1LAMTFTR VS18VUA1LAMTFTR Rohm Semiconductor datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
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6000+ 0.2 EUR
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Mindestbestellmenge: 3000
KDZVTFTR18B KDZVTFTR18B Rohm Semiconductor datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 19809 Stücke:
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DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTB143ECHZGT116 DTB143ECHZGT116 Rohm Semiconductor datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
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DTB143ECT116 DTB143ECT116 Rohm Semiconductor datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
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DTB143EKFRAT146 DTB143EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTB143EKFRAT146 DTB143EKFRAT146 Rohm Semiconductor Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
KX128-1091 Rohm Semiconductor Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
Produkt ist nicht verfügbar
BCX17HZGT116 BCX17HZGT116 Rohm Semiconductor datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCX17HZGT116 BCX17HZGT116 Rohm Semiconductor datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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DTC123EEBTL DTC123EEBTL Rohm Semiconductor datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN 100MA 50V DIGITAL TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
DTC123EEBTL DTC123EEBTL Rohm Semiconductor datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN 100MA 50V DIGITAL TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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FDZT40RB5.1 FDZT40RB5.1 Rohm Semiconductor FDZ5.1.pdf Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Produkt ist nicht verfügbar
FDZT40RB5.1 FDZT40RB5.1 Rohm Semiconductor FDZ5.1.pdf Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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FDZT40RB7.5 FDZT40RB7.5 Rohm Semiconductor FDZ7.5.pdf Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Produkt ist nicht verfügbar
FDZT40RB6.2 FDZT40RB6.2 Rohm Semiconductor FDZ6.2.pdf Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
FDZT40RB6.2 FDZT40RB6.2 Rohm Semiconductor FDZ6.2.pdf Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
FDZT40RB5.6 FDZT40RB5.6 Rohm Semiconductor FDZ5.6.pdf Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
ESR18EZPJ104 ESR18EZPJ104 Rohm Semiconductor esr-e.pdf Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
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176+ 0.1 EUR
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RRU1LAM4STFTR RRU1LAM4STFTR Rohm Semiconductor datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6000 Stücke:
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3000+0.31 EUR
6000+ 0.29 EUR
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RRU1LAM4STFTR RRU1LAM4STFTR Rohm Semiconductor datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6002 Stücke:
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23+ 0.79 EUR
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500+ 0.43 EUR
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R6024ENZM12C8 r6024enzc17-e.pdf
R6024ENZM12C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
R6024ENZ4C13 datasheet?p=R6024ENZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6024ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Power Dissipation (Max): 245W (Tc)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
auf Bestellung 450 Stücke:
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2+10.12 EUR
10+ 8.5 EUR
100+ 6.87 EUR
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R6024KNZ4C13 datasheet?p=R6024KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 600 Stücke:
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2+10.75 EUR
10+ 9.23 EUR
100+ 7.69 EUR
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MNR18ERAPJ513
MNR18ERAPJ513
Hersteller: Rohm Semiconductor
Description: RES ARRAY 8 RES 51K OHM 1606
auf Bestellung 2864 Stücke:
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BD9E303EFJ-LBH2 datasheet?p=BD9E303EFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9E303EFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
auf Bestellung 4750 Stücke:
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250+5.5 EUR
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1250+ 4.17 EUR
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Mindestbestellmenge: 250
2SCR553RTL datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553RTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2SCR553RTL datasheet?p=2SCR553R&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553RTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 2233 Stücke:
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25+0.72 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
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2SCR553PFRAT100 datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PFRAT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
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1000+0.29 EUR
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2SCR553PFRAT100 datasheet?p=2SCR553PFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553PFRAT100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
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19+0.93 EUR
24+ 0.75 EUR
100+ 0.51 EUR
500+ 0.38 EUR
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2SAR512P5T100 2sar512p5t100-e.pdf
2SAR512P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 2000 Stücke:
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Anzahl Preis ohne MwSt
1000+0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 1000
2SAR512P5T100 2sar512p5t100-e.pdf
2SAR512P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 2630 Stücke:
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25+0.72 EUR
29+ 0.61 EUR
100+ 0.46 EUR
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2SAR512PFRAT100 2sar512pfra-e.pdf
2SAR512PFRAT100
Hersteller: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
Produkt ist nicht verfügbar
2SAR512PFRAT100 2sar512pfra-e.pdf
2SAR512PFRAT100
Hersteller: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
auf Bestellung 775 Stücke:
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24+0.74 EUR
28+ 0.64 EUR
100+ 0.48 EUR
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BD733L2FP-CE2 datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L2FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 18000 Stücke:
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Anzahl Preis ohne MwSt
2000+1.48 EUR
6000+ 1.43 EUR
10000+ 1.37 EUR
Mindestbestellmenge: 2000
BD733L2FP-CE2 datasheet?p=BD733L2FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L2FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 19077 Stücke:
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6+3.24 EUR
10+ 2.91 EUR
25+ 2.75 EUR
100+ 2.34 EUR
250+ 2.2 EUR
500+ 1.92 EUR
1000+ 1.59 EUR
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BD733L5FP-CE2 datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 2000 Stücke:
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Anzahl Preis ohne MwSt
2000+1.85 EUR
Mindestbestellmenge: 2000
BD733L5FP-CE2 datasheet?p=BD733L5FP-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L5FP-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
auf Bestellung 4740 Stücke:
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Anzahl Preis ohne MwSt
5+4.05 EUR
10+ 3.64 EUR
25+ 3.43 EUR
100+ 2.92 EUR
250+ 2.74 EUR
500+ 2.4 EUR
1000+ 1.99 EUR
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BD733L2FP3-EVK-301 datasheet?p=BD733L2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733L2FP3-EVK-301
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Produkt ist nicht verfügbar
RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
RB218NS200TL datasheet?p=RB218NS200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB218NS200TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 613 Stücke:
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4+4.7 EUR
10+ 3.91 EUR
100+ 3.11 EUR
500+ 2.63 EUR
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RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
Produkt ist nicht verfügbar
RB521G-40FHT2R rb521g-40fht2r-e.pdf
RB521G-40FHT2R
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
auf Bestellung 7748 Stücke:
Lieferzeit 10-14 Tag (e)
SH8KA4TB SOP8_TB_taping.pdf
SH8KA4TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 41573 Stücke:
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13+1.46 EUR
15+ 1.2 EUR
100+ 0.93 EUR
500+ 0.79 EUR
1000+ 0.64 EUR
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QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2280 Stücke:
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17+1.06 EUR
20+ 0.92 EUR
100+ 0.63 EUR
500+ 0.53 EUR
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SH8KA2GZETB
SH8KA2GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2907 Stücke:
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Anzahl Preis ohne MwSt
8+2.31 EUR
10+ 1.88 EUR
100+ 1.46 EUR
500+ 1.24 EUR
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Hersteller: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Produkt ist nicht verfügbar
QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Produkt ist nicht verfügbar
QH8KA2TCR datasheet?p=QH8KA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.21 EUR
17+ 1.06 EUR
100+ 0.73 EUR
500+ 0.61 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 15
SH8KA4TB1 datasheet?p=SH8KA4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8KA4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Produkt ist nicht verfügbar
2SK2463T100 2SK2463.pdf
2SK2463T100
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.13 EUR
100+ 0.78 EUR
500+ 0.65 EUR
Mindestbestellmenge: 14
BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 2500 Stücke:
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2500+1.17 EUR
Mindestbestellmenge: 2500
BU7233YF-CGE2 datasheet?p=BU7233YF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233YF-CGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 4640 Stücke:
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Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.3 EUR
25+ 2.17 EUR
100+ 1.85 EUR
250+ 1.73 EUR
500+ 1.52 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 7
BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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3000+0.081 EUR
6000+ 0.075 EUR
9000+ 0.062 EUR
Mindestbestellmenge: 3000
BAS21VMFHTE-17 datasheet?p=BAS21VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS21VMFHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 15049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
54+ 0.33 EUR
110+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 38
VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS18VUA1LAMTFTR datasheet?p=VS18VUA1LAMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS18VUA1LAMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
KDZVTFTR18B datasheet?p=KDZVTF18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 19809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTB143ECHZGT116 datasheet?p=DTB143ECHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
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40+0.44 EUR
59+ 0.3 EUR
121+ 0.15 EUR
Mindestbestellmenge: 40
DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 3000 Stücke:
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Anzahl Preis ohne MwSt
3000+0.099 EUR
Mindestbestellmenge: 3000
DTB143ECT116 datasheet?p=DTB143EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143ECT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 3380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
44+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
DTB143EKFRAT146
DTB143EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DTB143EKFRAT146
DTB143EKFRAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
KX128-1091
Hersteller: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
Produkt ist nicht verfügbar
BCX17HZGT116 datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BCX17HZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCX17HZGT116 datasheet?p=BCX17HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BCX17HZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
39+ 0.46 EUR
100+ 0.23 EUR
Mindestbestellmenge: 28
DTC123EEBTL datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EEBTL
Hersteller: Rohm Semiconductor
Description: NPN 100MA 50V DIGITAL TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
DTC123EEBTL datasheet?p=DTC123EEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EEBTL
Hersteller: Rohm Semiconductor
Description: NPN 100MA 50V DIGITAL TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
48+ 0.37 EUR
Mindestbestellmenge: 39
FDZT40RB5.1 FDZ5.1.pdf
FDZT40RB5.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Produkt ist nicht verfügbar
FDZT40RB5.1 FDZ5.1.pdf
FDZT40RB5.1
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
47+ 0.38 EUR
100+ 0.19 EUR
Mindestbestellmenge: 33
FDZT40RB7.5 FDZ7.5.pdf
FDZT40RB7.5
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Produkt ist nicht verfügbar
FDZT40RB6.2 FDZ6.2.pdf
FDZT40RB6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
FDZT40RB6.2 FDZ6.2.pdf
FDZT40RB6.2
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
FDZT40RB5.6 FDZ5.6.pdf
FDZT40RB5.6
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Produkt ist nicht verfügbar
ESR18EZPJ104 esr-e.pdf
ESR18EZPJ104
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
auf Bestellung 9729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
100+ 0.18 EUR
151+ 0.12 EUR
176+ 0.1 EUR
500+ 0.072 EUR
1000+ 0.063 EUR
Mindestbestellmenge: 53
RRU1LAM4STFTR datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRU1LAM4STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 3000
RRU1LAM4STFTR datasheet?p=RRU1LAM4STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRU1LAM4STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 19
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