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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AON7408 IC-Mikroschalter Produktcode: 84416
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > MOSFET N-CH 8542 39 90 00 |
Produkt ist nicht verfügbar
erwartet:
200 Stück
200 Stück - erwartet
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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AON7506 Produktcode: 163661
zu Favoriten hinzufügen
Lieblingsprodukt
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Alpha & Omega |
Transistoren > MOSFET N-CHGehäuse: DFN3x3 Uds,V: 30 V Idd,A: 12 А Rds(on), Ohm: 15,8 mOhm Ciss, pF/Qg, nC: 542/9 JHGF: SMD |
auf Bestellung 61 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AON7140 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 18.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7140 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 18.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7230 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 21W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement |
auf Bestellung 686 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7230 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 21W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 686 Stücke: Lieferzeit 7-14 Tag (e) |
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| AON7246 | ALPHA |
Transistor N-Channel MOSFET; 60V; 20V; 26mOhm; 34,5A; 34,7W; -55°C ~ 150°C; AON7246 TAON7246Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7254 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 11A Power dissipation: 15.6W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.6nC Kind of channel: enhancement |
auf Bestellung 1002 Stücke: Lieferzeit 14-21 Tag (e) |
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| AON7254 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 17A; 39W; -55°C ~ 150°C; AON7254 TAON7254Anzahl je Verpackung: 10 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7254 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 11A Power dissipation: 15.6W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.6nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1002 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 5.5A/17A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
auf Bestellung 22273 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 150V 5.5A/17A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7262E | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34A Power dissipation: 17W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
auf Bestellung 1351 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7262E | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34A Power dissipation: 17W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1351 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7262E | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 60V 21A/34A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
auf Bestellung 3271 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7262E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7262E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7264E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R |
auf Bestellung 95000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7264E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R |
auf Bestellung 95000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7280 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 39A Power dissipation: 33W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of channel: enhancement |
auf Bestellung 1563 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7280 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 39A Power dissipation: 33W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1563 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7280 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 20A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7280 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 20A/50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
auf Bestellung 9942 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7292 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 11W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhancement |
auf Bestellung 2666 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7292 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 11W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2666 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
auf Bestellung 62073 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Power dissipation: 8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 3nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AON7296 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296Anzahl je Verpackung: 50 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 42597 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 5A/12.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7318 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 15.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 37nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AON7380 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 9.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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| AON7400A | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 30V; 20V; 11,3mOhm; 40A; 25W; -55°C ~ 150°C; AON7400A TAON7400aAnzahl je Verpackung: 25 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7400A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7400A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
auf Bestellung 8197 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7401 | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 25V; 19mOhm; 35A; 29W; -55°C ~ 150°C; AON7401 TAON7401Anzahl je Verpackung: 5 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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| AON7403 | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 25V; 36mOhm; 29A; 25W; -55°C ~ 150°C; AON7403 TAON7403Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
auf Bestellung 8812 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7404G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 20A/20A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V |
auf Bestellung 3558 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Power dissipation: 6W Case: DFN3x3A Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement |
auf Bestellung 4249 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Power dissipation: 6W Case: DFN3x3A Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4249 Stücke: Lieferzeit 7-14 Tag (e) |
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| AON7406 | Allegro |
Transistor N-Channel MOSFET; 30V; 20V; 24mOhm; 25A; 15,5W; -55°C ~ 150°C; AON7406 TAON7406Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9A/25A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V |
auf Bestellung 22218 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7406 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 9A/25A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -29A Power dissipation: 12W Case: DFN3x3 EP Gate-source voltage: ±8V On-state resistance: 18mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
auf Bestellung 3997 Stücke: Lieferzeit 14-21 Tag (e) |
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| AON7407 | ALPHA |
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407Anzahl je Verpackung: 25 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7407 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -29A Power dissipation: 12W Case: DFN3x3 EP Gate-source voltage: ±8V On-state resistance: 18mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3997 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
auf Bestellung 9336 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AON7407 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AON7408 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 4.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 7.1nC Kind of channel: enhancement |
auf Bestellung 2776 Stücke: Lieferzeit 14-21 Tag (e) |
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| AON7408 IC-Mikroschalter Produktcode: 84416
zu Favoriten hinzufügen
Lieblingsprodukt
|
Produkt ist nicht verfügbar
erwartet:
200 Stück
200 Stück - erwartet
| AON7506 Produktcode: 163661
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Alpha & Omega
Transistoren > MOSFET N-CH
Gehäuse: DFN3x3
Uds,V: 30 V
Idd,A: 12 А
Rds(on), Ohm: 15,8 mOhm
Ciss, pF/Qg, nC: 542/9
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: DFN3x3
Uds,V: 30 V
Idd,A: 12 А
Rds(on), Ohm: 15,8 mOhm
Ciss, pF/Qg, nC: 542/9
JHGF: SMD
auf Bestellung 61 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| AON7140 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| AON7140 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| 100+ | 0.72 EUR |
| AON7230 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 82+ | 0.88 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.74 EUR |
| AON7230 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 686 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 82+ | 0.88 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.74 EUR |
| AON7246 |
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Hersteller: ALPHA
Transistor N-Channel MOSFET; 60V; 20V; 26mOhm; 34,5A; 34,7W; -55°C ~ 150°C; AON7246 TAON7246
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 26mOhm; 34,5A; 34,7W; -55°C ~ 150°C; AON7246 TAON7246
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.03 EUR |
| AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| AON7254 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
auf Bestellung 1002 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 121+ | 0.59 EUR |
| 136+ | 0.53 EUR |
| 150+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| AON7254 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 17A; 39W; -55°C ~ 150°C; AON7254 TAON7254
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 17A; 39W; -55°C ~ 150°C; AON7254 TAON7254
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 2.08 EUR |
| AON7254 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1002 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 121+ | 0.59 EUR |
| 136+ | 0.53 EUR |
| 150+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| AON7254 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
auf Bestellung 22273 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| AON7254 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.77 EUR |
| 6000+ | 0.72 EUR |
| AON7254 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.65 EUR |
| 6000+ | 0.63 EUR |
| AON7254 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.65 EUR |
| 6000+ | 0.63 EUR |
| AON7262E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
auf Bestellung 1351 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 152+ | 0.47 EUR |
| 172+ | 0.42 EUR |
| 186+ | 0.39 EUR |
| AON7262E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1351 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 152+ | 0.47 EUR |
| 172+ | 0.42 EUR |
| 186+ | 0.39 EUR |
| AON7262E |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
auf Bestellung 3271 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.29 EUR |
| 13+ | 1.45 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.66 EUR |
| AON7262E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.55 EUR |
| AON7262E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 34A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.56 EUR |
| AON7264E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R
auf Bestellung 95000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
| 10000+ | 0.33 EUR |
| 15000+ | 0.3 EUR |
| 25000+ | 0.28 EUR |
| AON7264E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 28A 8-Pin DFN-A EP T/R
auf Bestellung 95000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
| 10000+ | 0.33 EUR |
| 15000+ | 0.3 EUR |
| 25000+ | 0.28 EUR |
| AON7280 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| AON7280 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1563 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| AON7280 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.97 EUR |
| 6000+ | 0.94 EUR |
| AON7280 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
auf Bestellung 9942 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.15 EUR |
| AON7292 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
auf Bestellung 2666 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 104+ | 0.69 EUR |
| 117+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 500+ | 0.49 EUR |
| AON7292 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2666 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 104+ | 0.69 EUR |
| 117+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 500+ | 0.49 EUR |
| 3000+ | 0.46 EUR |
| AON7292 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
auf Bestellung 62073 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| AON7292 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.7 EUR |
| 6000+ | 0.65 EUR |
| 9000+ | 0.64 EUR |
| AON7296 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7296 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.76 EUR |
| AON7296 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 42597 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 2000+ | 0.4 EUR |
| AON7296 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.35 EUR |
| 10000+ | 0.33 EUR |
| 15000+ | 0.31 EUR |
| AON7296 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 1.19 EUR |
| 181+ | 0.78 EUR |
| 183+ | 0.74 EUR |
| 268+ | 0.49 EUR |
| 270+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.24 EUR |
| AON7296 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 183+ | 0.8 EUR |
| 268+ | 0.53 EUR |
| 270+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| AON7318 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7380 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 290+ | 0.25 EUR |
| 491+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 532+ | 0.13 EUR |
| AON7400A |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 30V; 20V; 11,3mOhm; 40A; 25W; -55°C ~ 150°C; AON7400A TAON7400a
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 11,3mOhm; 40A; 25W; -55°C ~ 150°C; AON7400A TAON7400a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.63 EUR |
| AON7400A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.22 EUR |
| AON7400A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
auf Bestellung 8197 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.25 EUR |
| AON7401 |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 19mOhm; 35A; 29W; -55°C ~ 150°C; AON7401 TAON7401
Anzahl je Verpackung: 5 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 19mOhm; 35A; 29W; -55°C ~ 150°C; AON7401 TAON7401
Anzahl je Verpackung: 5 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 2.11 EUR |
| AON7403 |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 36mOhm; 29A; 25W; -55°C ~ 150°C; AON7403 TAON7403
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 36mOhm; 29A; 25W; -55°C ~ 150°C; AON7403 TAON7403
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 1.54 EUR |
| AON7404 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 8812 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 2000+ | 0.53 EUR |
| AON7404 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.47 EUR |
| AON7404G |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
auf Bestellung 3558 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.32 EUR |
| AON7406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
auf Bestellung 4249 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 336+ | 0.21 EUR |
| 376+ | 0.19 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| AON7406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4249 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 336+ | 0.21 EUR |
| 376+ | 0.19 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| AON7406 |
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Hersteller: Allegro
Transistor N-Channel MOSFET; 30V; 20V; 24mOhm; 25A; 15,5W; -55°C ~ 150°C; AON7406 TAON7406
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 24mOhm; 25A; 15,5W; -55°C ~ 150°C; AON7406 TAON7406
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.56 EUR |
| AON7406 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
auf Bestellung 22218 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.21 EUR |
| AON7406 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.19 EUR |
| 10000+ | 0.17 EUR |
| 15000+ | 0.16 EUR |
| AON7407 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
auf Bestellung 3997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 148+ | 0.49 EUR |
| 246+ | 0.29 EUR |
| 274+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| AON7407 |
![]() |
Hersteller: ALPHA
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407
Anzahl je Verpackung: 25 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.92 EUR |
| AON7407 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3997 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 148+ | 0.49 EUR |
| 246+ | 0.29 EUR |
| 274+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 5000+ | 0.2 EUR |
| AON7407 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| AON7407 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 9336 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 2000+ | 0.35 EUR |
| AON7407 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| AON7407 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| AON7408 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 4.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 7.1nC
Kind of channel: enhancement
auf Bestellung 2776 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 0.34 EUR |
| 410+ | 0.17 EUR |
| 459+ | 0.16 EUR |
| 500+ | 0.14 EUR |
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