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68pF 3000V NP0 5% 1812 1k/reel (C1812N680J302N1-Hitano)
Produktcode: 192512
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Hitano Kondensatoren SMD > Kondensatoren 1812
Kapazität: 68 pF
Nennspannung: 3000 V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 1812
auf Bestellung 952 Stück:
Lieferzeit 21-28 Tag (e)
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HGTG12N60A4D HGTG12N60A4D
Produktcode: 31158
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Fairchild hgt1s12n60a4ds-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
auf Bestellung 13 Stück:
Lieferzeit 21-28 Tag (e)
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HGTP12N60C3D HGTP12N60C3D
Produktcode: 122684
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Fairchild hgtp12n60c3d-1010383.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
Produkt ist nicht verfügbar
erwartet: 20 Stück
20 Stück - erwartet 20.02.2025
Im Einkaufswagen  Stück im Wert von  UAH
12N65 12N65 LUGUANG ELECTRONIC 12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
109+0.66 EUR
121+0.59 EUR
125+0.57 EUR
132+0.54 EUR
137+0.52 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
12N65 12N65 LUGUANG ELECTRONIC 12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.93 EUR
109+0.66 EUR
121+0.59 EUR
125+0.57 EUR
132+0.54 EUR
137+0.52 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
12N65 LGE Transistor N-Channel MOSFET; Unipolar; 650V; 12A; 0,54Ohm; 33.2W; -55°C ~ 150°C; Substitute: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65;
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.57 EUR
Mindestbestellmenge: 20
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12N60
auf Bestellung 4653 Stücke:
Lieferzeit 21-28 Tag (e)
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1812N680G202CT 1812N680G202CT Walsin Middle_and_High_Voltage_DS-1535659.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 68 pF, +/- 2% 2K V T&R MH
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.60 EUR
10+1.11 EUR
100+0.76 EUR
500+0.64 EUR
1000+0.52 EUR
2000+0.51 EUR
10000+0.48 EUR
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1812N681K202CT 1812N681K202CT Walsin Middle_and_High_Voltage_DS-1535659.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 680 pF, +/- 10% 2K V T&R MH
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.16 EUR
10+0.79 EUR
100+0.52 EUR
1000+0.34 EUR
2000+0.33 EUR
10000+0.31 EUR
25000+0.30 EUR
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2SC2812N6-CPA-TB-E 2SC2812N6-CPA-TB-E onsemi en7198-d.pdf Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 12129790 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.08 EUR
Mindestbestellmenge: 6662
Im Einkaufswagen  Stück im Wert von  UAH
A22NE-MP-PD12-N-69K A22NE-MP-PD12-N-69K Omron Automation and Safety A22NE-PD_A22NE-P_DS_EN_201907_A2633I-E3-06-1627661.pdf Emergency Stop Switches / E-Stop Switches Estp 40mmPullrst1NO2NCpush IP6
auf Bestellung 5 Stücke:
Lieferzeit 75-79 Tag (e)
1+223.89 EUR
5+220.76 EUR
10+211.29 EUR
25+200.83 EUR
50+189.29 EUR
100+185.77 EUR
250+185.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
A8L-11-12N6 A8L-11-12N6 Omron Electronics en_a8l-1664376.pdf Rocker Switches Rocker Switch
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.11 EUR
10+5.10 EUR
100+4.45 EUR
300+3.77 EUR
600+3.68 EUR
1200+3.27 EUR
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A8L-21-12N6 A8L-21-12N6 Omron Electronics en_a8l-1664376.pdf Rocker Switches Rocker Switch
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+5.49 EUR
100+4.96 EUR
300+4.21 EUR
600+3.70 EUR
1200+3.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AOB12N65L AOB12N65L ALPHA & OMEGA SEMICONDUCTOR AOB12N65L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
47+1.54 EUR
52+1.39 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
AOB12N65L AOB12N65L ALPHA & OMEGA SEMICONDUCTOR AOB12N65L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
47+1.54 EUR
52+1.39 EUR
55+1.32 EUR
100+1.29 EUR
800+1.27 EUR
Mindestbestellmenge: 41
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AOB12N65L AOB12N65L Alpha & Omega Semiconductor Inc. AOB12N65L.pdf Description: MOSFET N-CH 650V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
10+2.98 EUR
100+2.05 EUR
Mindestbestellmenge: 4
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AOB12N65L AOB12N65L Alpha & Omega Semiconductor Inc. AOB12N65L.pdf Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.56 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N60 ALPHA&OMEGA AOT12N60.pdf Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.11 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60 AOTF12N60 ALPHA & OMEGA SEMICONDUCTOR AOTF12N60-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
42+1.72 EUR
47+1.53 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60 ALPHA&OMEGA TO220F.pdf Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60 AOTF12N60 ALPHA & OMEGA SEMICONDUCTOR AOTF12N60-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 699 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.12 EUR
42+1.72 EUR
47+1.53 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.07 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60L AOTF12N60L Alpha & Omega Semiconductor Inc. AOT12N60.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
50+1.98 EUR
100+1.78 EUR
Mindestbestellmenge: 5
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AOTF12N65 ALPHA&OMEGA TO220F.pdf Transistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.93 EUR
Mindestbestellmenge: 10
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BXP12N65F BXP12N65F BRIDGELUX BXP12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
55+1.32 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65F BRIDGELUX BXP12N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.64 EUR
55+1.32 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 44
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FDPF12N60NZ FDPF12N60NZ ONSEMI ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.50 EUR
40+1.83 EUR
42+1.73 EUR
Mindestbestellmenge: 29
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FDPF12N60NZ FDPF12N60NZ ONSEMI ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.50 EUR
40+1.83 EUR
42+1.73 EUR
100+1.72 EUR
500+1.66 EUR
Mindestbestellmenge: 29
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FDPF12N60NZ FDPF12N60NZ onsemi ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.07 EUR
50+2.53 EUR
100+2.28 EUR
500+1.85 EUR
Mindestbestellmenge: 4
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FDPF12N60NZ FDPF12N60NZ onsemi / Fairchild ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
auf Bestellung 7990 Stücke:
Lieferzeit 94-98 Tag (e)
1+4.84 EUR
10+2.50 EUR
100+2.24 EUR
500+1.83 EUR
1000+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQA12N60 FQA12N60 Fairchild Semiconductor FAIRS42369-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
189+2.68 EUR
Mindestbestellmenge: 189
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FQB12N60TM FQB12N60TM Fairchild Semiconductor FAIRS19087-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
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217+2.33 EUR
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FQI12N60CTU FQI12N60CTU Fairchild Semiconductor FAIRS25683-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 2882 Stücke:
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FQI12N60TU FQI12N60TU Fairchild Semiconductor FAIRS19087-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 627 Stücke:
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FQP12N60 FQP12N60 Fairchild Semiconductor FAIRS07073-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
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FQPF12N60T FQPF12N60T Fairchild Semiconductor FAIRS17575-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:
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HGT1S12N60B3 HGT1S12N60B3 Harris Corporation HRISSC96-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
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HGT1S12N60B3D HGT1S12N60B3D Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
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HGT1S12N60B3DS Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
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HGT1S12N60C3 HGT1S12N60C3 Harris Corporation HRISS480-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 899 Stücke:
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HGT1S12N60C3D HGT1S12N60C3D Harris Corporation HRISS481-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 2637 Stücke:
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HGT1S12N60C3DS HGT1S12N60C3DS Fairchild Semiconductor FAIRS45387-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
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143+3.54 EUR
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HGT1S12N60C3R HGT1S12N60C3R Harris Corporation HRISSC99-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 1962 Stücke:
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HGT1S12N60C3S9AR4501 HGT1S12N60C3S9AR4501 Harris Corporation Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
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HGTG12N60A4D ON-Semicoductor hgt1s12n60a4ds-d.pdf Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
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2+16.66 EUR
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HGTG12N60A4D ON-Semicoductor hgt1s12n60a4ds-d.pdf Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 1 Stücke:
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2+16.66 EUR
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HGTP12N60C3R HGTP12N60C3R Harris Corporation HRISSC99-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 2400 Stücke:
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239+2.12 EUR
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IXFA12N65X2 IXFA12N65X2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_12n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 238 Stücke:
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3+7.52 EUR
50+4.21 EUR
100+3.87 EUR
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IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
20+3.72 EUR
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26+2.83 EUR
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IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
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20+3.72 EUR
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26+2.83 EUR
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IXFP12N65X2 IXFP12N65X2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_12n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 165 Stücke:
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3+7.20 EUR
50+4.01 EUR
100+3.69 EUR
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IXFP12N65X2 IXFP12N65X2 IXYS media-3322978.pdf MOSFETs 650V/12A TO-220
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.15 EUR
10+5.67 EUR
50+3.96 EUR
100+3.64 EUR
500+3.41 EUR
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IXFP12N65X2M IXFP12N65X2M Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp12n65x2m_datasheet.pdf.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 282 Stücke:
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3+7.30 EUR
50+4.08 EUR
100+3.75 EUR
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MLZ2012N6R8LT000 MLZ2012N6R8LT000 TDK MLZ2012.pdf Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
auf Bestellung 3940 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
1220+0.06 EUR
1454+0.05 EUR
1539+0.05 EUR
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MLZ2012N6R8LT000 MLZ2012N6R8LT000 TDK MLZ2012.pdf Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3940 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
1220+0.06 EUR
1454+0.05 EUR
1539+0.05 EUR
4000+0.05 EUR
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MLZ2012N6R8LT000 MLZ2012N6R8LT000 TDK inductor_commercial_decoupling_mlz2012_en.pdf Power Inductors - SMD 6.8 UH 20%
auf Bestellung 71526 Stücke:
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15+0.20 EUR
29+0.10 EUR
100+0.08 EUR
4000+0.07 EUR
8000+0.06 EUR
24000+0.05 EUR
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MLZ2012N6R8LT000 MLZ2012N6R8LT000 TDK Corporation inductor_commercial_decoupling_mlz2012_en.pdf Description: FIXED IND 6.8UH 550MA 250MOHM SM
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 112000 Stücke:
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4000+0.08 EUR
8000+0.07 EUR
12000+0.07 EUR
20000+0.07 EUR
28000+0.06 EUR
40000+0.06 EUR
100000+0.06 EUR
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MLZ2012N6R8LT000 MLZ2012N6R8LT000 TDK Corporation inductor_commercial_decoupling_mlz2012_en.pdf Description: FIXED IND 6.8UH 550MA 250MOHM SM
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 113145 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
117+0.15 EUR
151+0.12 EUR
1000+0.09 EUR
Mindestbestellmenge: 91
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68pF 3000V NP0 5% 1812 1k/reel (C1812N680J302N1-Hitano)
Produktcode: 192512
zu Favoriten hinzufügen Lieblingsprodukt

Hersteller: Hitano
Kondensatoren SMD > Kondensatoren 1812
Kapazität: 68 pF
Nennspannung: 3000 V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 1812
auf Bestellung 952 Stück:
Lieferzeit 21-28 Tag (e)
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HGTG12N60A4D
Produktcode: 31158
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hgt1s12n60a4ds-d.pdf
HGTG12N60A4D
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
auf Bestellung 13 Stück:
Lieferzeit 21-28 Tag (e)
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HGTP12N60C3D
Produktcode: 122684
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hgtp12n60c3d-1010383.pdf
HGTP12N60C3D
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
Produkt ist nicht verfügbar
erwartet: 20 Stück
20 Stück - erwartet 20.02.2025
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12N65 12N65.pdf
12N65
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
109+0.66 EUR
121+0.59 EUR
125+0.57 EUR
132+0.54 EUR
137+0.52 EUR
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12N65 12N65.pdf
12N65
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.93 EUR
109+0.66 EUR
121+0.59 EUR
125+0.57 EUR
132+0.54 EUR
137+0.52 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
12N65
Hersteller: LGE
Transistor N-Channel MOSFET; Unipolar; 650V; 12A; 0,54Ohm; 33.2W; -55°C ~ 150°C; Substitute: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65;
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.57 EUR
Mindestbestellmenge: 20
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12N60
auf Bestellung 4653 Stücke:
Lieferzeit 21-28 Tag (e)
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1812N680G202CT Middle_and_High_Voltage_DS-1535659.pdf
1812N680G202CT
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 68 pF, +/- 2% 2K V T&R MH
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.60 EUR
10+1.11 EUR
100+0.76 EUR
500+0.64 EUR
1000+0.52 EUR
2000+0.51 EUR
10000+0.48 EUR
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1812N681K202CT Middle_and_High_Voltage_DS-1535659.pdf
1812N681K202CT
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 680 pF, +/- 10% 2K V T&R MH
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.16 EUR
10+0.79 EUR
100+0.52 EUR
1000+0.34 EUR
2000+0.33 EUR
10000+0.31 EUR
25000+0.30 EUR
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2SC2812N6-CPA-TB-E en7198-d.pdf
2SC2812N6-CPA-TB-E
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 12129790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.08 EUR
Mindestbestellmenge: 6662
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A22NE-MP-PD12-N-69K A22NE-PD_A22NE-P_DS_EN_201907_A2633I-E3-06-1627661.pdf
A22NE-MP-PD12-N-69K
Hersteller: Omron Automation and Safety
Emergency Stop Switches / E-Stop Switches Estp 40mmPullrst1NO2NCpush IP6
auf Bestellung 5 Stücke:
Lieferzeit 75-79 Tag (e)
Anzahl Preis
1+223.89 EUR
5+220.76 EUR
10+211.29 EUR
25+200.83 EUR
50+189.29 EUR
100+185.77 EUR
250+185.72 EUR
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A8L-11-12N6 en_a8l-1664376.pdf
A8L-11-12N6
Hersteller: Omron Electronics
Rocker Switches Rocker Switch
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.11 EUR
10+5.10 EUR
100+4.45 EUR
300+3.77 EUR
600+3.68 EUR
1200+3.27 EUR
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A8L-21-12N6 en_a8l-1664376.pdf
A8L-21-12N6
Hersteller: Omron Electronics
Rocker Switches Rocker Switch
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.12 EUR
10+5.49 EUR
100+4.96 EUR
300+4.21 EUR
600+3.70 EUR
1200+3.27 EUR
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AOB12N65L AOB12N65L.pdf
AOB12N65L
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
47+1.54 EUR
52+1.39 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 41
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AOB12N65L AOB12N65L.pdf
AOB12N65L
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.74 EUR
47+1.54 EUR
52+1.39 EUR
55+1.32 EUR
100+1.29 EUR
800+1.27 EUR
Mindestbestellmenge: 41
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AOB12N65L AOB12N65L.pdf
AOB12N65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+2.98 EUR
100+2.05 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AOB12N65L AOB12N65L.pdf
AOB12N65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.56 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N60 AOT12N60.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.11 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60 AOTF12N60-DTE.pdf
AOTF12N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
42+1.72 EUR
47+1.53 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 34
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AOTF12N60 TO220F.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60 AOTF12N60-DTE.pdf
AOTF12N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 699 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.12 EUR
42+1.72 EUR
47+1.53 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.07 EUR
Mindestbestellmenge: 10
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.02 EUR
Mindestbestellmenge: 20
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AOTF12N60L AOT12N60.pdf
AOTF12N60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
50+1.98 EUR
100+1.78 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65 TO220F.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.93 EUR
Mindestbestellmenge: 10
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BXP12N65F BXP12N65.pdf
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
55+1.32 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BXP12N65F BXP12N65.pdf
BXP12N65F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.64 EUR
55+1.32 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
FDPF12N60NZ ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw
FDPF12N60NZ
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.50 EUR
40+1.83 EUR
42+1.73 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
FDPF12N60NZ ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw
FDPF12N60NZ
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.50 EUR
40+1.83 EUR
42+1.73 EUR
100+1.72 EUR
500+1.66 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
FDPF12N60NZ ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw
FDPF12N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.07 EUR
50+2.53 EUR
100+2.28 EUR
500+1.85 EUR
Mindestbestellmenge: 4
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FDPF12N60NZ ONSM-S-A0003584576-1.pdf?t.download=true&u=5oefqw
FDPF12N60NZ
Hersteller: onsemi / Fairchild
MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
auf Bestellung 7990 Stücke:
Lieferzeit 94-98 Tag (e)
Anzahl Preis
1+4.84 EUR
10+2.50 EUR
100+2.24 EUR
500+1.83 EUR
1000+1.76 EUR
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FQA12N60 FAIRS42369-1.pdf?t.download=true&u=5oefqw
FQA12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.68 EUR
Mindestbestellmenge: 189
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FQB12N60TM FAIRS19087-1.pdf?t.download=true&u=5oefqw
FQB12N60TM
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
217+2.33 EUR
Mindestbestellmenge: 217
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FQI12N60CTU FAIRS25683-1.pdf?t.download=true&u=5oefqw
FQI12N60CTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 2882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
275+1.84 EUR
Mindestbestellmenge: 275
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FQI12N60TU FAIRS19087-1.pdf?t.download=true&u=5oefqw
FQI12N60TU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
211+2.39 EUR
Mindestbestellmenge: 211
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FQP12N60 FAIRS07073-1.pdf?t.download=true&u=5oefqw
FQP12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
222+2.27 EUR
Mindestbestellmenge: 222
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FQPF12N60T FAIRS17575-1.pdf?t.download=true&u=5oefqw
FQPF12N60T
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.77 EUR
Mindestbestellmenge: 286
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HGT1S12N60B3 HRISSC96-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.29 EUR
Mindestbestellmenge: 221
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HGT1S12N60B3D HRISSD10-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3D
Hersteller: Harris Corporation
Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.29 EUR
Mindestbestellmenge: 221
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HGT1S12N60B3DS HRISSD10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.36 EUR
Mindestbestellmenge: 214
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HGT1S12N60C3 HRISS480-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
195+2.59 EUR
Mindestbestellmenge: 195
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HGT1S12N60C3D HRISS481-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3D
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 2637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.24 EUR
Mindestbestellmenge: 226
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HGT1S12N60C3DS FAIRS45387-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3DS
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.54 EUR
Mindestbestellmenge: 143
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HGT1S12N60C3R HRISSC99-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3R
Hersteller: Harris Corporation
Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+2.21 EUR
Mindestbestellmenge: 229
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HGT1S12N60C3S9AR4501
HGT1S12N60C3S9AR4501
Hersteller: Harris Corporation
Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.66 EUR
Mindestbestellmenge: 190
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HGTG12N60A4D hgt1s12n60a4ds-d.pdf
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+16.66 EUR
Mindestbestellmenge: 2
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HGTG12N60A4D hgt1s12n60a4ds-d.pdf
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+16.66 EUR
Mindestbestellmenge: 2
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HGTP12N60C3R HRISSC99-1.pdf?t.download=true&u=5oefqw
HGTP12N60C3R
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
239+2.12 EUR
Mindestbestellmenge: 239
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IXFA12N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_12n65x2_datasheet.pdf.pdf
IXFA12N65X2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
50+4.21 EUR
100+3.87 EUR
Mindestbestellmenge: 3
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IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
20+3.72 EUR
24+2.99 EUR
26+2.83 EUR
Mindestbestellmenge: 18
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IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.15 EUR
20+3.72 EUR
24+2.99 EUR
26+2.83 EUR
Mindestbestellmenge: 18
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IXFP12N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_12n65x2_datasheet.pdf.pdf
IXFP12N65X2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.20 EUR
50+4.01 EUR
100+3.69 EUR
Mindestbestellmenge: 3
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IXFP12N65X2 media-3322978.pdf
IXFP12N65X2
Hersteller: IXYS
MOSFETs 650V/12A TO-220
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.15 EUR
10+5.67 EUR
50+3.96 EUR
100+3.64 EUR
500+3.41 EUR
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IXFP12N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp12n65x2m_datasheet.pdf.pdf
IXFP12N65X2M
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.30 EUR
50+4.08 EUR
100+3.75 EUR
Mindestbestellmenge: 3
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MLZ2012N6R8LT000 MLZ2012.pdf
MLZ2012N6R8LT000
Hersteller: TDK
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
auf Bestellung 3940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1220+0.06 EUR
1454+0.05 EUR
1539+0.05 EUR
Mindestbestellmenge: 556
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MLZ2012N6R8LT000 MLZ2012.pdf
MLZ2012N6R8LT000
Hersteller: TDK
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
556+0.13 EUR
1220+0.06 EUR
1454+0.05 EUR
1539+0.05 EUR
4000+0.05 EUR
Mindestbestellmenge: 556
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MLZ2012N6R8LT000 inductor_commercial_decoupling_mlz2012_en.pdf
MLZ2012N6R8LT000
Hersteller: TDK
Power Inductors - SMD 6.8 UH 20%
auf Bestellung 71526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+0.20 EUR
29+0.10 EUR
100+0.08 EUR
4000+0.07 EUR
8000+0.06 EUR
24000+0.05 EUR
Mindestbestellmenge: 15
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MLZ2012N6R8LT000 inductor_commercial_decoupling_mlz2012_en.pdf
MLZ2012N6R8LT000
Hersteller: TDK Corporation
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.08 EUR
8000+0.07 EUR
12000+0.07 EUR
20000+0.07 EUR
28000+0.06 EUR
40000+0.06 EUR
100000+0.06 EUR
Mindestbestellmenge: 4000
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MLZ2012N6R8LT000 inductor_commercial_decoupling_mlz2012_en.pdf
MLZ2012N6R8LT000
Hersteller: TDK Corporation
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 113145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
117+0.15 EUR
151+0.12 EUR
1000+0.09 EUR
Mindestbestellmenge: 91
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