Suchergebnisse für "12n6" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 77
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 77
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 6662
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 41
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 41
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 34
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 34
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 44
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 44
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 29
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 29
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 189
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 217
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 275
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 211
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 222
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 286
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 221
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 221
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 214
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 195
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 226
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 143
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 229
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 190
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 239
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 18
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 18
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 556
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 556
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 15
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 91
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
68pF 3000V NP0 5% 1812 1k/reel (C1812N680J302N1-Hitano) Produktcode: 192512
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hitano |
Kondensatoren SMD > Kondensatoren 1812 Kapazität: 68 pF Nennspannung: 3000 V Dielektrikum: NP0 Präzision: ±5% J Größentyp: 1812 |
auf Bestellung 952 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
HGTG12N60A4D Produktcode: 31158
zu Favoriten hinzufügen
Lieblingsprodukt
|
Fairchild |
![]() Gehäuse: TO-247 Vces: 600 V Vce: 2,7 V Ic 25: 54 A Ic 100: 23 A Pd 25: 167 W td(on)/td(off) 100-150 Grad: 17/96 |
auf Bestellung 13 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
HGTP12N60C3D Produktcode: 122684
zu Favoriten hinzufügen
Lieblingsprodukt
|
Fairchild |
![]() Gehäuse: TO-220 Vces: 600 V Vce: 1,65 V Ic 25: 24 A Ic 100: 12 А Pd 25: 104 W td(on)/td(off) 100-150 Grad: 28/270 |
Produkt ist nicht verfügbar
erwartet:
20 Stück
20 Stück - erwartet 20.02.2025
|
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
12N65 | LUGUANG ELECTRONIC |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 33.2W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.5nC |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
12N65 | LUGUANG ELECTRONIC |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 33.2W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1932 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
12N65 | LGE |
Transistor N-Channel MOSFET; Unipolar; 650V; 12A; 0,54Ohm; 33.2W; -55°C ~ 150°C; Substitute: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65; Anzahl je Verpackung: 10 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
12N60 |
auf Bestellung 4653 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
1812N680G202CT | Walsin |
![]() |
auf Bestellung 92 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
1812N681K202CT | Walsin |
![]() |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
2SC2812N6-CPA-TB-E | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: 3-CP Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 12129790 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
A22NE-MP-PD12-N-69K | Omron Automation and Safety |
![]() |
auf Bestellung 5 Stücke: Lieferzeit 75-79 Tag (e) |
|
||||||||||||||
![]() |
A8L-11-12N6 | Omron Electronics |
![]() |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
A8L-21-12N6 | Omron Electronics |
![]() |
auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
AOB12N65L | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 39.8nC |
auf Bestellung 767 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
AOB12N65L | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 39.8nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 767 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
AOB12N65L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
auf Bestellung 1011 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
AOB12N65L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
AOT12N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
AOTF12N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 40nC Kind of channel: enhancement |
auf Bestellung 699 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
AOTF12N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
AOTF12N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 40nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 699 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
AOTF12N60FD | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
AOTF12N60FD | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
AOTF12N60FD | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
AOTF12N60L | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
AOTF12N65 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 39nC |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 39nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
FDPF12N60NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
FDPF12N60NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
FDPF12N60NZ | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V |
auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FDPF12N60NZ | onsemi / Fairchild |
![]() |
auf Bestellung 7990 Stücke: Lieferzeit 94-98 Tag (e) |
|
||||||||||||||
![]() |
FQA12N60 | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 9750 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQB12N60TM | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 6990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQI12N60CTU | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 3.13W (Ta), 225W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
auf Bestellung 2882 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQI12N60TU | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQP12N60 | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 9664 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQPF12N60T | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 1336 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60B3 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-262 (I2PAK) Td (on/off) @ 25°C: 26ns/150ns Switching Energy: 304µJ (on), 250µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 104 W |
auf Bestellung 917 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60B3D | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: I2PAK (TO-262) Td (on/off) @ 25°C: 26ns/150ns Switching Energy: 304µJ (on), 250µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 104 W |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
HGT1S12N60B3DS | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-263AB Td (on/off) @ 25°C: 26ns/150ns Switching Energy: 304µJ (on), 250µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 78 nC Part Status: Active Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 104 W |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
HGT1S12N60C3 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A Supplier Device Package: TO-262 (I2PAK) Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 104 W |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60C3D | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-262 (I2PAK) Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 104 W |
auf Bestellung 2637 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60C3DS | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 32 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-263AB Gate Charge: 71 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 104 W |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60C3R | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A Supplier Device Package: I2PAK (TO-262) Td (on/off) @ 25°C: 37ns/120ns Switching Energy: 400µJ (on), 340µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 71 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 104 W |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
HGT1S12N60C3S9AR4501 | Harris Corporation |
Description: 27A, 600V, UFS N-CHANNEL IGBT Packaging: Bulk Part Status: Active |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
HGTG12N60A4D | ON-Semicoductor |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
HGTG12N60A4D | ON-Semicoductor |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
HGTP12N60C3R | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 37ns/120ns Switching Energy: 400µJ (on), 340µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 71 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 104 W |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IXFA12N65X2 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXFP12N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IXFP12N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
IXFP12N65X2 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXFP12N65X2 | IXYS |
![]() |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IXFP12N65X2M | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MLZ2012N6R8LT000 | TDK |
![]() Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20% Type of inductor: ferrite Mounting: SMD Inductance: 6.8µH Operating current: 0.55A Resistance: 0.25Ω Tolerance: ±20% Test frequency: 2MHz Case - mm: 2012 Case - inch: 0805 Operating temperature: -55...125°C |
auf Bestellung 3940 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
MLZ2012N6R8LT000 | TDK |
![]() Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20% Type of inductor: ferrite Mounting: SMD Inductance: 6.8µH Operating current: 0.55A Resistance: 0.25Ω Tolerance: ±20% Test frequency: 2MHz Case - mm: 2012 Case - inch: 0805 Operating temperature: -55...125°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3940 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
MLZ2012N6R8LT000 | TDK |
![]() |
auf Bestellung 71526 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MLZ2012N6R8LT000 | TDK Corporation |
![]() Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -55°C ~ 125°C DC Resistance (DCR): 250mOhm Frequency - Self Resonant: 60MHz Current - Saturation (Isat): 110mA Material - Core: Ferrite Inductance Frequency - Test: 2 MHz Supplier Device Package: 0805 (2012 Metric) Height - Seated (Max): 0.041" (1.05mm) Part Status: Active Inductance: 6.8 µH Current Rating (Amps): 550 mA |
auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MLZ2012N6R8LT000 | TDK Corporation |
![]() Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -55°C ~ 125°C DC Resistance (DCR): 250mOhm Frequency - Self Resonant: 60MHz Current - Saturation (Isat): 110mA Material - Core: Ferrite Inductance Frequency - Test: 2 MHz Supplier Device Package: 0805 (2012 Metric) Height - Seated (Max): 0.041" (1.05mm) Part Status: Active Inductance: 6.8 µH Current Rating (Amps): 550 mA |
auf Bestellung 113145 Stücke: Lieferzeit 10-14 Tag (e) |
|
68pF 3000V NP0 5% 1812 1k/reel (C1812N680J302N1-Hitano) Produktcode: 192512
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller: Hitano
Kondensatoren SMD > Kondensatoren 1812
Kapazität: 68 pF
Nennspannung: 3000 V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 1812
Kondensatoren SMD > Kondensatoren 1812
Kapazität: 68 pF
Nennspannung: 3000 V
Dielektrikum: NP0
Präzision: ±5% J
Größentyp: 1812
auf Bestellung 952 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HGTG12N60A4D Produktcode: 31158
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
auf Bestellung 13 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HGTP12N60C3D Produktcode: 122684
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
Produkt ist nicht verfügbar
erwartet:
20 Stück
20 Stück - erwartet 20.02.2025
12N65 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
109+ | 0.66 EUR |
121+ | 0.59 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
137+ | 0.52 EUR |
12N65 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 33.2W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
109+ | 0.66 EUR |
121+ | 0.59 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
137+ | 0.52 EUR |
12N65 |
Hersteller: LGE
Transistor N-Channel MOSFET; Unipolar; 650V; 12A; 0,54Ohm; 33.2W; -55°C ~ 150°C; Substitute: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65;
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; Unipolar; 650V; 12A; 0,54Ohm; 33.2W; -55°C ~ 150°C; Substitute: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65;
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.57 EUR |
1812N680G202CT |
![]() |
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 68 pF, +/- 2% 2K V T&R MH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 68 pF, +/- 2% 2K V T&R MH
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.60 EUR |
10+ | 1.11 EUR |
100+ | 0.76 EUR |
500+ | 0.64 EUR |
1000+ | 0.52 EUR |
2000+ | 0.51 EUR |
10000+ | 0.48 EUR |
1812N681K202CT |
![]() |
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 680 pF, +/- 10% 2K V T&R MH
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 MLCC NPO 680 pF, +/- 10% 2K V T&R MH
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 1.16 EUR |
10+ | 0.79 EUR |
100+ | 0.52 EUR |
1000+ | 0.34 EUR |
2000+ | 0.33 EUR |
10000+ | 0.31 EUR |
25000+ | 0.30 EUR |
2SC2812N6-CPA-TB-E |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.15A 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 12129790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6662+ | 0.08 EUR |
A22NE-MP-PD12-N-69K |
![]() |
Hersteller: Omron Automation and Safety
Emergency Stop Switches / E-Stop Switches Estp 40mmPullrst1NO2NCpush IP6
Emergency Stop Switches / E-Stop Switches Estp 40mmPullrst1NO2NCpush IP6
auf Bestellung 5 Stücke:
Lieferzeit 75-79 Tag (e)Anzahl | Preis |
---|---|
1+ | 223.89 EUR |
5+ | 220.76 EUR |
10+ | 211.29 EUR |
25+ | 200.83 EUR |
50+ | 189.29 EUR |
100+ | 185.77 EUR |
250+ | 185.72 EUR |
A8L-11-12N6 |
![]() |
Hersteller: Omron Electronics
Rocker Switches Rocker Switch
Rocker Switches Rocker Switch
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.11 EUR |
10+ | 5.10 EUR |
100+ | 4.45 EUR |
300+ | 3.77 EUR |
600+ | 3.68 EUR |
1200+ | 3.27 EUR |
A8L-21-12N6 |
![]() |
Hersteller: Omron Electronics
Rocker Switches Rocker Switch
Rocker Switches Rocker Switch
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.12 EUR |
10+ | 5.49 EUR |
100+ | 4.96 EUR |
300+ | 4.21 EUR |
600+ | 3.70 EUR |
1200+ | 3.27 EUR |
AOB12N65L |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
47+ | 1.54 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
100+ | 1.29 EUR |
AOB12N65L |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 40W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 39.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
47+ | 1.54 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
100+ | 1.29 EUR |
800+ | 1.27 EUR |
AOB12N65L |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 650V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.61 EUR |
10+ | 2.98 EUR |
100+ | 2.05 EUR |
AOB12N65L |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.56 EUR |
AOT12N60 |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.11 EUR |
AOTF12N60 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
42+ | 1.72 EUR |
47+ | 1.53 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
AOTF12N60 |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.02 EUR |
AOTF12N60 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 699 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
42+ | 1.72 EUR |
47+ | 1.53 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
AOTF12N60FD |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.07 EUR |
AOTF12N60FD |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.02 EUR |
AOTF12N60FD |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.02 EUR |
AOTF12N60L |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.07 EUR |
50+ | 1.98 EUR |
100+ | 1.78 EUR |
AOTF12N65 |
![]() |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.93 EUR |
BXP12N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.64 EUR |
55+ | 1.32 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
BXP12N65F |
![]() |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.64 EUR |
55+ | 1.32 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
FDPF12N60NZ |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.50 EUR |
40+ | 1.83 EUR |
42+ | 1.73 EUR |
FDPF12N60NZ |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.50 EUR |
40+ | 1.83 EUR |
42+ | 1.73 EUR |
100+ | 1.72 EUR |
500+ | 1.66 EUR |
FDPF12N60NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.07 EUR |
50+ | 2.53 EUR |
100+ | 2.28 EUR |
500+ | 1.85 EUR |
FDPF12N60NZ |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
auf Bestellung 7990 Stücke:
Lieferzeit 94-98 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.84 EUR |
10+ | 2.50 EUR |
100+ | 2.24 EUR |
500+ | 1.83 EUR |
1000+ | 1.76 EUR |
FQA12N60 |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
189+ | 2.68 EUR |
FQB12N60TM |
![]() |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
217+ | 2.33 EUR |
FQI12N60CTU |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 2882 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
275+ | 1.84 EUR |
FQI12N60TU |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
211+ | 2.39 EUR |
FQP12N60 |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
222+ | 2.27 EUR |
FQPF12N60T |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
286+ | 1.77 EUR |
HGT1S12N60B3 |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
221+ | 2.29 EUR |
HGT1S12N60B3D |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
221+ | 2.29 EUR |
HGT1S12N60B3DS |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
214+ | 2.36 EUR |
HGT1S12N60C3 |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
195+ | 2.59 EUR |
HGT1S12N60C3D |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 2637 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
226+ | 2.24 EUR |
HGT1S12N60C3DS |
![]() |
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 3.54 EUR |
HGT1S12N60C3R |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
229+ | 2.21 EUR |
HGT1S12N60C3S9AR4501 |
Hersteller: Harris Corporation
Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
190+ | 2.66 EUR |
HGTG12N60A4D |
![]() |
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C; HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C; HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.66 EUR |
HGTG12N60A4D |
![]() |
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C; HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C; HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.66 EUR |
HGTP12N60C3R |
![]() |
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 2.12 EUR |
IXFA12N65X2 |
![]() |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.52 EUR |
50+ | 4.21 EUR |
100+ | 3.87 EUR |
IXFP12N65X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.15 EUR |
20+ | 3.72 EUR |
24+ | 2.99 EUR |
26+ | 2.83 EUR |
IXFP12N65X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.15 EUR |
20+ | 3.72 EUR |
24+ | 2.99 EUR |
26+ | 2.83 EUR |
IXFP12N65X2 |
![]() |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.20 EUR |
50+ | 4.01 EUR |
100+ | 3.69 EUR |
IXFP12N65X2 |
![]() |
Hersteller: IXYS
MOSFETs 650V/12A TO-220
MOSFETs 650V/12A TO-220
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.15 EUR |
10+ | 5.67 EUR |
50+ | 3.96 EUR |
100+ | 3.64 EUR |
500+ | 3.41 EUR |
IXFP12N65X2M |
![]() |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.30 EUR |
50+ | 4.08 EUR |
100+ | 3.75 EUR |
MLZ2012N6R8LT000 |
![]() |
Hersteller: TDK
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
auf Bestellung 3940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
1220+ | 0.06 EUR |
1454+ | 0.05 EUR |
1539+ | 0.05 EUR |
MLZ2012N6R8LT000 |
![]() |
Hersteller: TDK
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
Anzahl je Verpackung: 1 Stücke
Category: SMD 0805 inductors
Description: Inductor: ferrite; SMD; 0805; 6.8uH; 550mA; 250mΩ; 2MHz; ±20%
Type of inductor: ferrite
Mounting: SMD
Inductance: 6.8µH
Operating current: 0.55A
Resistance: 0.25Ω
Tolerance: ±20%
Test frequency: 2MHz
Case - mm: 2012
Case - inch: 0805
Operating temperature: -55...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
1220+ | 0.06 EUR |
1454+ | 0.05 EUR |
1539+ | 0.05 EUR |
4000+ | 0.05 EUR |
MLZ2012N6R8LT000 |
![]() |
Hersteller: TDK
Power Inductors - SMD 6.8 UH 20%
Power Inductors - SMD 6.8 UH 20%
auf Bestellung 71526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 0.20 EUR |
29+ | 0.10 EUR |
100+ | 0.08 EUR |
4000+ | 0.07 EUR |
8000+ | 0.06 EUR |
24000+ | 0.05 EUR |
MLZ2012N6R8LT000 |
![]() |
Hersteller: TDK Corporation
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.08 EUR |
8000+ | 0.07 EUR |
12000+ | 0.07 EUR |
20000+ | 0.07 EUR |
28000+ | 0.06 EUR |
40000+ | 0.06 EUR |
100000+ | 0.06 EUR |
MLZ2012N6R8LT000 |
![]() |
Hersteller: TDK Corporation
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
Description: FIXED IND 6.8UH 550MA 250MOHM SM
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -55°C ~ 125°C
DC Resistance (DCR): 250mOhm
Frequency - Self Resonant: 60MHz
Current - Saturation (Isat): 110mA
Material - Core: Ferrite
Inductance Frequency - Test: 2 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.041" (1.05mm)
Part Status: Active
Inductance: 6.8 µH
Current Rating (Amps): 550 mA
auf Bestellung 113145 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.19 EUR |
117+ | 0.15 EUR |
151+ | 0.12 EUR |
1000+ | 0.09 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]