Suchergebnisse für "20n50" : > 120
Art der Ansicht :
Mindestbestellmenge: 4
Mindestbestellmenge: 1000
Mindestbestellmenge: 4
Mindestbestellmenge: 4
Mindestbestellmenge: 18
Mindestbestellmenge: 18
Mindestbestellmenge: 5
Mindestbestellmenge: 4
Mindestbestellmenge: 4
Mindestbestellmenge: 4
Mindestbestellmenge: 500
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHA20N50E-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 19A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA20N50E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 500V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA20N50E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1953 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA20N50E-GE3 | Vishay / Siliconix |
MOSFET 500V N-CH |
auf Bestellung 4974 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB20N50E-GE3 | Vishay / Siliconix |
MOSFET 500V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB20N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 19A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 2413 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFB20N50K-E3 | Vishay / Siliconix |
MOSFET RECOMMENDED ALT SIHP18N50C-E3 |
auf Bestellung 860 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50C-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50C-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 479 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIHG20N50C-E3 | Siliconix |
Tranzystor: N-MOSFET unipolarny 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Tranzystory z kana?em N THT SIHG20N50C-E3 TSIHG20n50c Anzahl je Verpackung: 5 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG20N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
auf Bestellung 6668 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50C-E3 | Vishay / Siliconix |
MOSFET 500V Vds 30V Vgs TO-247AC |
auf Bestellung 7869 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 19A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50E-GE3 | Vishay Semiconductors |
MOSFET 500V Vds 30V Vgs TO-247AC |
auf Bestellung 990 Stücke: Lieferzeit 164-168 Tag (e) |
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SiHH20N50E-T1-GE3 | Vishay / Siliconix |
MOSFET 500V Vds 30V Vgs PowerPAK 8 x 8 |
auf Bestellung 2857 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP20N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 19A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSA20N50M | Truesemi | MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDPF20N50 | ON Semiconductor |
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auf Bestellung 9990 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDPF20N50T | ON Semiconductor |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTH20N50 |
auf Bestellung 9597 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTM20N50 |
auf Bestellung 6878 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTV20N50E | MOTO |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTV20N50E/D |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTW20N50E | ON |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTY20N50E/D |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NB20N50104JBA |
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auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NB20N50104MBA |
auf Bestellung 69800 Stücke: Lieferzeit 21-28 Tag (e) |
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| PFW20N50 |
auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) |
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| PHW20N50E |
auf Bestellung 5800 Stücke: Lieferzeit 21-28 Tag (e) |
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| R1120N501B | RICOH | 04+ SOT-153 |
auf Bestellung 3100 Stücke: Lieferzeit 21-28 Tag (e) |
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| RDD020N50TL |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RDX120N50 |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIGH20N50C |
auf Bestellung 846 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIHG20N50C | VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SiHG20N50C TO-247 | 10+ |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIHG20N50C-E3 | Vishay Semiconductors |
MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460) |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHG20N50C-E3; 20A; 500V; 280W, N-канальный; корпус: TO-247; VISHAY |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| SLF20N50C |
auf Bestellung 84 Stücke: Lieferzeit 21-28 Tag (e) |
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| SMM20N50 |
auf Bestellung 145 Stücke: Lieferzeit 21-28 Tag (e) |
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| SSH20N50 |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SSM20N50 |
auf Bestellung 151 Stücke: Lieferzeit 21-28 Tag (e) |
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| STP80NF10(sihg20n50) |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STW20N50 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| TY20N50E |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| WFW20N50 |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Транзистор польовий IRFB20N50KPBF 20A 500V N-ch TO-220 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| Транзистор польовий SiHG20N50C 20A 500V N-ch TO-247 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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310J101-20 | Cicoil |
Description: CABLE RIBBON 20COND 0.05 CLEAR Packaging: Bulk Length: 500.0' (152.40m) Wire Gauge: 28 AWG Shielding: Unshielded Jacket (Insulation) Material: Flexx-Sil™ Pitch: 0.050" (1.27mm) Operating Temperature: -65°C ~ 260°C Number of Conductors: 20 Cable Type: Flat Cable Ratings: UL E324413, CE Jacket Color: Clear Ribbon Thickness: 0.035" (0.89mm) Ribbon Width: 1.000" (25.40mm) Voltage: 450 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA20N50F Produktcode: 104160 |
Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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FDP20N50F Produktcode: 190678 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FDPF20N50 Produktcode: 191938 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRFB20N50KPBF Produktcode: 35981 |
Vishay |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.21 Ciss, pF/Qg, nC: 2870/110 JHGF: THT |
Produkt ist nicht verfügbar
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SIHG20N50C-E3 Produktcode: 51442 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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TSA20N50M MOSFET 20A 500V 0,26Ohm Produktcode: 100109 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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| 3120-N501-G7Q1-W14DR3-16A | E-T-A |
Circuit Breakers The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for overload prot |
Produkt ist nicht verfügbar |
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| 3120-N503-G7Q1-W14DR4-X3120-U0200M-16A | E-T-A |
Circuit Breakers Min Ord Qty 10. The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for o |
Produkt ist nicht verfügbar |
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| 3120-N504-N7Q1-W14DR3-16A | E-T-A |
Circuit Breakers Min Ord Qty 10. The 3120-N...4 IP65 rated thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N...4 is i |
Produkt ist nicht verfügbar |
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| 520N50005CTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±500ppb Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50005DTR | CTS Electronic Components |
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 0.5ppm Stability, -30/+85 C, 3k/reel |
Produkt ist nicht verfügbar |
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| 520N50010CTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±1ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
| SIHA20N50E-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.66 EUR |
| 50+ | 3.75 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.21 EUR |
| SIHA20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.22 EUR |
| SIHA20N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.68 EUR |
| 10+ | 3.89 EUR |
| 100+ | 3.1 EUR |
| 500+ | 2.62 EUR |
| SIHA20N50E-GE3 |
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Hersteller: Vishay / Siliconix
MOSFET 500V N-CH
MOSFET 500V N-CH
auf Bestellung 4974 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.98 EUR |
| 10+ | 4.24 EUR |
| 100+ | 3.96 EUR |
| 1000+ | 3.4 EUR |
| 5000+ | 2.46 EUR |
| SIHB20N50E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 3.96 EUR |
| 25+ | 3.84 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.33 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.64 EUR |
| SIHB20N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 2413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.54 EUR |
| 1000+ | 2.69 EUR |
| SIHFB20N50K-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT SIHP18N50C-E3
MOSFET RECOMMENDED ALT SIHP18N50C-E3
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.66 EUR |
| 10+ | 8.1 EUR |
| 25+ | 7.66 EUR |
| 100+ | 6.56 EUR |
| 250+ | 6.2 EUR |
| 500+ | 5.83 EUR |
| 1000+ | 4.98 EUR |
| SIHG20N50C-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.02 EUR |
| 20+ | 3.62 EUR |
| 26+ | 2.77 EUR |
| 28+ | 2.62 EUR |
| SIHG20N50C-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.02 EUR |
| 20+ | 3.62 EUR |
| 26+ | 2.77 EUR |
| 28+ | 2.62 EUR |
| SIHG20N50C-E3 |
|
Hersteller: Siliconix
Tranzystor: N-MOSFET unipolarny 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Tranzystory z kana?em N THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
Tranzystor: N-MOSFET unipolarny 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Tranzystory z kana?em N THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.52 EUR |
| SIHG20N50C-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 6668 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.8 EUR |
| 25+ | 3.81 EUR |
| 100+ | 3.27 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.49 EUR |
| 2000+ | 2.34 EUR |
| 5000+ | 2.25 EUR |
| SIHG20N50C-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs TO-247AC
MOSFET 500V Vds 30V Vgs TO-247AC
auf Bestellung 7869 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.72 EUR |
| 10+ | 4.14 EUR |
| 25+ | 3.8 EUR |
| 100+ | 3.24 EUR |
| 250+ | 3.15 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.55 EUR |
| SIHG20N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.54 EUR |
| 500+ | 3.14 EUR |
| SIHG20N50E-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 500V Vds 30V Vgs TO-247AC
MOSFET 500V Vds 30V Vgs TO-247AC
auf Bestellung 990 Stücke:
Lieferzeit 164-168 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.16 EUR |
| 10+ | 4.33 EUR |
| 25+ | 4.1 EUR |
| 100+ | 4 EUR |
| SiHH20N50E-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs PowerPAK 8 x 8
MOSFET 500V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 6.55 EUR |
| 100+ | 5.3 EUR |
| 500+ | 4.72 EUR |
| 1000+ | 4.05 EUR |
| 3000+ | 3.98 EUR |
| SIHP20N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.66 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.21 EUR |
| TSA20N50M |
Hersteller: Truesemi
MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.63 EUR |
| 10+ | 6.99 EUR |
| SIHG20N50C-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460)
MOSFET N-CH 500V 20A TO-247AC (аналог IRFP460)
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)| SIHG20N50C-E3; 20A; 500V; 280W, N-канальный; корпус: TO-247; VISHAY |
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Транзистор польовий IRFB20N50KPBF 20A 500V N-ch TO-220 |
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Транзистор польовий SiHG20N50C 20A 500V N-ch TO-247 |
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| 310J101-20 |
|
Hersteller: Cicoil
Description: CABLE RIBBON 20COND 0.05 CLEAR
Packaging: Bulk
Length: 500.0' (152.40m)
Wire Gauge: 28 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Flexx-Sil™
Pitch: 0.050" (1.27mm)
Operating Temperature: -65°C ~ 260°C
Number of Conductors: 20
Cable Type: Flat Cable
Ratings: UL E324413, CE
Jacket Color: Clear
Ribbon Thickness: 0.035" (0.89mm)
Ribbon Width: 1.000" (25.40mm)
Voltage: 450 V
Description: CABLE RIBBON 20COND 0.05 CLEAR
Packaging: Bulk
Length: 500.0' (152.40m)
Wire Gauge: 28 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Flexx-Sil™
Pitch: 0.050" (1.27mm)
Operating Temperature: -65°C ~ 260°C
Number of Conductors: 20
Cable Type: Flat Cable
Ratings: UL E324413, CE
Jacket Color: Clear
Ribbon Thickness: 0.035" (0.89mm)
Ribbon Width: 1.000" (25.40mm)
Voltage: 450 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 6.94 EUR |
| IRFB20N50KPBF Produktcode: 35981 |
|
|
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.21
Ciss, pF/Qg, nC: 2870/110
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 0.21
Ciss, pF/Qg, nC: 2870/110
JHGF: THT
Produkt ist nicht verfügbar
| TSA20N50M MOSFET 20A 500V 0,26Ohm Produktcode: 100109 |
Produkt ist nicht verfügbar
| 3120-N501-G7Q1-W14DR3-16A |
|
Hersteller: E-T-A
Circuit Breakers The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for overload prot
Circuit Breakers The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for overload prot
Produkt ist nicht verfügbar
| 3120-N503-G7Q1-W14DR4-X3120-U0200M-16A |
|
Hersteller: E-T-A
Circuit Breakers Min Ord Qty 10. The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for o
Circuit Breakers Min Ord Qty 10. The 3120-N thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N is ideally suited for o
Produkt ist nicht verfügbar
| 3120-N504-N7Q1-W14DR3-16A |
|
Hersteller: E-T-A
Circuit Breakers Min Ord Qty 10. The 3120-N...4 IP65 rated thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N...4 is i
Circuit Breakers Min Ord Qty 10. The 3120-N...4 IP65 rated thermal circuit breaker/switch combination unites overcurrent protection and the function of an ON/OFF switch within a single component. The trip element is a thermal bimetal. Type 3120-N...4 is i
Produkt ist nicht verfügbar
| 520N50005CTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±500ppb
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±500ppb
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50005DTR |
|
Hersteller: CTS Electronic Components
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 0.5ppm Stability, -30/+85 C, 3k/reel
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 0.5ppm Stability, -30/+85 C, 3k/reel
Produkt ist nicht verfügbar
| 520N50010CTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar