Suchergebnisse für "2N60C" : > 120

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UTC2N60C
auf Bestellung 3574 Stücke:
Lieferzeit 21-28 Tag (e)
Транзистор польовий FQPF2N60C 2A 600V N-ch TO-220F
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
02N60C3
Produktcode: 81218 		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
12n60c
Produktcode: 142479 		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
FQP12N60C
Produktcode: 166497 		fqp12n60c-d.pdf FAIRS46957-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQP2N60C MOSFET, N, TO-220 (Transistor) FQP2N60C MOSFET, N, TO-220 (Transistor)
Produktcode: 48426 		Fairchild Transistoren > MOSFET N-CH
Uds,V: 600 V
Idd,A: 2 А
Rds(on), Ohm: 3,6 Ohm
Ciss, pF/Qg, nC: 180/8.5
Produkt ist nicht verfügbar
FQPF12N60C FQPF12N60C
Produktcode: 92799 		FQP,FQPF12N60C.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQPF12N60C FQPF12N60C
Produktcode: 92801 		FQP,FQPF12N60C.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQPF2N60C
Produktcode: 180861 		FAIRS46442-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
HGTG12N60C3D TO-247 HGTG12N60C3D TO-247
Produktcode: 109889 		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
HGTP12N60C3 HGTP12N60C3
Produktcode: 99779 		HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXGH32N60CD1 (IGBT-Transistor)
Produktcode: 49455 		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3
Produktcode: 73163 		littelfuse_discrete_igbts_pt_ixgh72n60c3_datasheet.pdf.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGR32N60CD1 IXGR32N60CD1
Produktcode: 95812 		DS98631(IXGR32N60CD1).pdf Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
FQB12N60CTM FQB12N60CTM onsemi FQB12N60C.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTF FQD2N60CTF ON Semiconductor 394fqd2n60c.pdf Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTF FQD2N60CTF onsemi Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM FQD2N60CTM ON Semiconductor fqu2n60c-d.pdf Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM ON Semiconductor fqu2n60c-d.pdf Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM FQD2N60CTM onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM FQD2N60CTM onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM FQD2N60CTM onsemi / Fairchild FQU2N60C_D-2313846.pdf MOSFET N-CH/600V/2A/A.QFET
Produkt ist nicht verfügbar
FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI fqu2n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI fqu2n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD2N60CTM-WS FQD2N60CTM-WS ON Semiconductor fqu2n60c-d.pdf Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM-WS FQD2N60CTM-WS onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQP12N60C FQP12N60C ON Semiconductor fqp12n60c.pdf Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP12N60C FQP12N60C onsemi fqp12n60c-d.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQP2N60C FQP2N60C ON Semiconductor fqp2n60c.pdf Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP2N60C ON Semiconductor fqp2n60c.pdf Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP2N60C FQP2N60C onsemi FAIRS46442-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQPF12N60C FQPF12N60C ON Semiconductor fqpf12n60ct.pdf Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF12N60C FQPF12N60C onsemi FQP,FQPF12N60C.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQPF12N60CT FQPF12N60CT ON Semiconductor fqpf12n60ct.pdf Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
FQPF12N60CT FQPF12N60CT onsemi FQP,FQPF12N60C.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQPF2N60C FQPF2N60C ONSEMI FQP2N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQPF2N60C FQPF2N60C ONSEMI FQP2N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQPF2N60C ON Semiconductor fqp2n60c.pdf Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF2N60C FQPF2N60C ON Semiconductor fqp2n60c.pdf Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF2N60C FQPF2N60C onsemi FAIRS46442-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQU2N60CTU FQU2N60CTU ON Semiconductor fqu2n60c-d.pdf Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
FQU2N60CTU FQU2N60CTU onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
HGTG12N60C3D ON Semiconductor hgtg12n60c3d-d.pdf Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
HGTG12N60C3D HGTG12N60C3D ON Semiconductor hgtg12n60c3d-d.pdf Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
HGTG12N60C3D HGTG12N60C3D onsemi hgtg12n60c3d-d.pdf Description: IGBT 600V 24A 104W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
HGTP12N60C3 HGTP12N60C3 ON Semiconductor 1063889098595626hgtp12n60c3.pdf Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
Produkt ist nicht verfügbar
HGTP12N60C3 HGTP12N60C3 onsemi HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf Description: IGBT 600V 24A 104W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
HGTP12N60C3D HGTP12N60C3D ON Semiconductor 3904329947170109hgtp12n60c3d.pdf Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
HGTP12N60C3D HGTP12N60C3D onsemi hgtp12n60c3d-d.pdf Description: IGBT 600V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
IRFP22N60C3PBF IRFP22N60C3PBF Vishay Siliconix Description: MOSFET N-CH 650V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
IXGA12N60CD1 IXGA12N60CD1 IXYS ixys_98513-1547241.pdf IGBT Transistors 24 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA12N60CD1 IXGA12N60CD1 IXYS 98513.pdf Description: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGC12N60C IXGC12N60C IXYS IXGC12N60C%28D1%29.pdf Description: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGC12N60CD1 IXGC12N60CD1 IXYS IXGC12N60C%28D1%29.pdf Description: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGH12N60CD1 IXGH12N60CD1 IXYS 98623.pdf Description: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH32N60C IXGH32N60C IXYS littelfuse_discrete_igbts_pt_ixgh32n60c_datasheet.pdf.pdf Description: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60CD1 IXGH32N60CD1 IXYS 97544.pdf Description: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3 IXYS IXGH72N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3 IXYS IXGH72N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3 IXYS littelfuse_discrete_igbts_pt_ixgh72n60c3_datasheet.pdf.pdf Description: IGBT 600V 75A 540W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
Produkt ist nicht verfügbar
UTC2N60C
auf Bestellung 3574 Stücke:
Lieferzeit 21-28 Tag (e)
Транзистор польовий FQPF2N60C 2A 600V N-ch TO-220F
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
02N60C3
Produktcode: 81218
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
12n60c
Produktcode: 142479
Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
FQP12N60C
Produktcode: 166497		 fqp12n60c-d.pdf FAIRS46957-1.pdf?t.download=true&u=5oefqw
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQP2N60C MOSFET, N, TO-220 (Transistor)
Produktcode: 48426
FQP2N60C MOSFET, N, TO-220 (Transistor)
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Uds,V: 600 V
Idd,A: 2 А
Rds(on), Ohm: 3,6 Ohm
Ciss, pF/Qg, nC: 180/8.5
Produkt ist nicht verfügbar
FQPF12N60C
Produktcode: 92799		 FQP,FQPF12N60C.pdf
FQPF12N60C
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQPF12N60C
Produktcode: 92801		 FQP,FQPF12N60C.pdf
FQPF12N60C
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQPF2N60C
Produktcode: 180861		 FAIRS46442-1.pdf?t.download=true&u=5oefqw
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
HGTG12N60C3D TO-247
Produktcode: 109889
HGTG12N60C3D TO-247
Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
HGTP12N60C3
Produktcode: 99779		 HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf
HGTP12N60C3
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXGH32N60CD1 (IGBT-Transistor)
Produktcode: 49455
Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXGH72N60C3
Produktcode: 73163		 littelfuse_discrete_igbts_pt_ixgh72n60c3_datasheet.pdf.pdf
IXGH72N60C3
Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGR32N60CD1
Produktcode: 95812		 DS98631(IXGR32N60CD1).pdf
IXGR32N60CD1
Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
FQB12N60CTM FQB12N60C.pdf
FQB12N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTF 394fqd2n60c.pdf
FQD2N60CTF
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTF
FQD2N60CTF
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM fqu2n60c-d.pdf
FQD2N60CTM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM fqu2n60c-d.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM fqu2n60c-d.pdf
FQD2N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM fqu2n60c-d.pdf
FQD2N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N60CTM FQU2N60C_D-2313846.pdf
FQD2N60CTM
Hersteller: onsemi / Fairchild
MOSFET N-CH/600V/2A/A.QFET
Produkt ist nicht verfügbar
FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQP12N60C fqp12n60c.pdf
FQP12N60C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP12N60C fqp12n60c-d.pdf
FQP12N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQP2N60C fqp2n60c.pdf
FQP2N60C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP2N60C fqp2n60c.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FQP2N60C FAIRS46442-1.pdf?t.download=true&u=5oefqw
FQP2N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQPF12N60C fqpf12n60ct.pdf
FQPF12N60C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF12N60C FQP,FQPF12N60C.pdf
FQPF12N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQPF12N60CT fqpf12n60ct.pdf
FQPF12N60CT
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
FQPF12N60CT FQP,FQPF12N60C.pdf
FQPF12N60CT
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Produkt ist nicht verfügbar
FQPF2N60C FQP2N60C.pdf
FQPF2N60C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQPF2N60C FQP2N60C.pdf
FQPF2N60C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQPF2N60C fqp2n60c.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF2N60C fqp2n60c.pdf
FQPF2N60C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
FQPF2N60C FAIRS46442-1.pdf?t.download=true&u=5oefqw
FQPF2N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
FQU2N60CTU fqu2n60c-d.pdf
FQU2N60CTU
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
FQU2N60CTU fqu2n60c-d.pdf
FQU2N60CTU
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
HGTG12N60C3D hgtg12n60c3d-d.pdf
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
HGTG12N60C3D hgtg12n60c3d-d.pdf
HGTG12N60C3D
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
HGTG12N60C3D hgtg12n60c3d-d.pdf
HGTG12N60C3D
Hersteller: onsemi
Description: IGBT 600V 24A 104W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
HGTP12N60C3 1063889098595626hgtp12n60c3.pdf
HGTP12N60C3
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
Produkt ist nicht verfügbar
HGTP12N60C3 HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf
HGTP12N60C3
Hersteller: onsemi
Description: IGBT 600V 24A 104W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
HGTP12N60C3D 3904329947170109hgtp12n60c3d.pdf
HGTP12N60C3D
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
HGTP12N60C3D hgtp12n60c3d-d.pdf
HGTP12N60C3D
Hersteller: onsemi
Description: IGBT 600V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
IRFP22N60C3PBF
IRFP22N60C3PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
IXGA12N60CD1 ixys_98513-1547241.pdf
IXGA12N60CD1
Hersteller: IXYS
IGBT Transistors 24 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA12N60CD1 98513.pdf
IXGA12N60CD1
Hersteller: IXYS
Description: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGC12N60C IXGC12N60C%28D1%29.pdf
IXGC12N60C
Hersteller: IXYS
Description: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGC12N60CD1 IXGC12N60C%28D1%29.pdf
IXGC12N60CD1
Hersteller: IXYS
Description: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGH12N60CD1 98623.pdf
IXGH12N60CD1
Hersteller: IXYS
Description: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH32N60C littelfuse_discrete_igbts_pt_ixgh32n60c_datasheet.pdf.pdf
IXGH32N60C
Hersteller: IXYS
Description: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60CD1 97544.pdf
IXGH32N60CD1
Hersteller: IXYS
Description: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3.pdf
IXGH72N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Produkt ist nicht verfügbar
IXGH72N60C3 IXGH72N60C3.pdf
IXGH72N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH72N60C3 littelfuse_discrete_igbts_pt_ixgh72n60c3_datasheet.pdf.pdf
IXGH72N60C3
Hersteller: IXYS
Description: IGBT 600V 75A 540W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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