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50M040070N003 50M040070N003 Essentra Components 5020.PDF Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.213" (5.40mm)
Length - Below Head: 0.118" (3.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1865 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
87+ 0.2 EUR
100+ 0.18 EUR
121+ 0.15 EUR
129+ 0.14 EUR
135+ 0.13 EUR
250+ 0.12 EUR
500+ 0.11 EUR
Mindestbestellmenge: 77
50M040070N006 50M040070N006 Essentra Components 1499569-pdf.pdf Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.331" (8.40mm)
Length - Below Head: 0.236" (6.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
91+ 0.19 EUR
122+ 0.15 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 67
50M040070N008 50M040070N008 Essentra Components 1499570-pdf.pdf Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.409" (10.40mm)
Length - Below Head: 0.315" (8.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 4422 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
132+ 0.13 EUR
157+ 0.11 EUR
187+ 0.094 EUR
200+ 0.088 EUR
208+ 0.085 EUR
250+ 0.075 EUR
500+ 0.071 EUR
1000+ 0.068 EUR
Mindestbestellmenge: 112
50M040070N010 50M040070N010 Essentra Components 5020.PDF Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.488" (12.40mm)
Length - Below Head: 0.394" (10.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 30949 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
132+ 0.13 EUR
154+ 0.11 EUR
186+ 0.095 EUR
198+ 0.089 EUR
207+ 0.085 EUR
250+ 0.076 EUR
500+ 0.072 EUR
1000+ 0.068 EUR
Mindestbestellmenge: 112
50M040070N012 50M040070N012 Essentra Components 1499572-pdf.pdf Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.567" (14.40mm)
Length - Below Head: 0.472" (12.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1646 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
85+ 0.21 EUR
100+ 0.18 EUR
120+ 0.15 EUR
127+ 0.14 EUR
132+ 0.13 EUR
250+ 0.12 EUR
500+ 0.11 EUR
Mindestbestellmenge: 72
50M040070N016 50M040070N016 Essentra Components skuAsset?mediaId=168430 Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.724" (18.40mm)
Length - Below Head: 0.630" (16.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
132+ 0.13 EUR
152+ 0.12 EUR
184+ 0.096 EUR
196+ 0.09 EUR
205+ 0.086 EUR
250+ 0.077 EUR
500+ 0.073 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 112
50M040070N020 50M040070N020 Essentra Components skuAsset?mediaId=168431 Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.882" (22.40mm)
Length - Below Head: 0.787" (20.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
99+ 0.18 EUR
130+ 0.14 EUR
Mindestbestellmenge: 72
50M040070N025 50M040070N025 Essentra Components skuAsset?mediaId=168432 Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.079" (27.40mm)
Length - Below Head: 0.984" (25.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
129+ 0.14 EUR
152+ 0.12 EUR
182+ 0.097 EUR
194+ 0.091 EUR
202+ 0.087 EUR
250+ 0.078 EUR
500+ 0.074 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 112
50M040070N030 50M040070N030 Essentra Components skuAsset?mediaId=168433 Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.276" (32.40mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 2813 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
81+ 0.22 EUR
95+ 0.19 EUR
114+ 0.16 EUR
121+ 0.15 EUR
126+ 0.14 EUR
250+ 0.12 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 72
50M040070N040 50M040070N040 Essentra Components skuAsset?mediaId=168435 Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.669" (42.40mm)
Length - Below Head: 1.575" (40.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1299 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
93+ 0.19 EUR
107+ 0.17 EUR
128+ 0.14 EUR
136+ 0.13 EUR
142+ 0.12 EUR
250+ 0.11 EUR
500+ 0.1 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 77
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies Infineon_BSZ070N08LS5_DataSheet_v02_03_EN-3360909.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 28254 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.01 EUR
10+ 1.74 EUR
100+ 1.47 EUR
250+ 1.45 EUR
500+ 1.28 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 2
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
auf Bestellung 4448 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
10+ 2.13 EUR
100+ 1.7 EUR
500+ 1.43 EUR
1000+ 1.22 EUR
2000+ 1.16 EUR
Mindestbestellmenge: 7
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies 22infineon-bsz070n08ls5-ds-v02_02-en.pdffileid5546d4625696ed760156e.pdf Trans MOSFET N-CH 80V 13A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BXT270N02M BXT270N02M BRIDGELUX BXT270N02M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7173 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
321+ 0.22 EUR
457+ 0.16 EUR
643+ 0.11 EUR
1283+ 0.056 EUR
1701+ 0.042 EUR
2305+ 0.031 EUR
2428+ 0.029 EUR
Mindestbestellmenge: 162
BXT270N02M BXT270N02M BRIDGELUX BXT270N02M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7173 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
321+ 0.22 EUR
457+ 0.16 EUR
643+ 0.11 EUR
1283+ 0.056 EUR
1701+ 0.042 EUR
2305+ 0.031 EUR
Mindestbestellmenge: 162
CEA270N00000030000 TE Connectivity product-CEA270N00000030000.datasheet.pdf Category: Unclassified
Description: CEA270N00000030000
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
2+59.97 EUR
9+ 51.82 EUR
36+ 49.75 EUR
Mindestbestellmenge: 2
D970N06T D970N06T Infineon Technologies Infineon_D970N_DS_v03_01_en_de-3360112.pdf Rectifiers Rectifier Diode 970A 600V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+128.32 EUR
10+ 121.7 EUR
18+ 112.32 EUR
54+ 104.28 EUR
FQB70N08TM FQB70N08TM Fairchild Semiconductor FAIRS18571-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 80V 70A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 35A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
231+2.11 EUR
Mindestbestellmenge: 231
FQP70N08 FQP70N08 Fairchild Semiconductor FAIRS08209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 35A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
247+1.98 EUR
Mindestbestellmenge: 247
FR10870N0050J01 FR10870N0050J01 KYOCERA AVX AVX_FR_Style-3162303.pdf High Frequency/RF Resistors
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.72 EUR
10+ 20.66 EUR
25+ 18.59 EUR
50+ 16.02 EUR
100+ 14.71 EUR
250+ 13.94 EUR
500+ 13.43 EUR
G70N04T G70N04T Goford Semiconductor GOFORD-G70N04T.pdf Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.43 EUR
Mindestbestellmenge: 2000
IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6905 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 7
IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon_IAUC70N08S5N074_DS_v01_00_EN-1578743.pdf MOSFET MOSFET_(75V 120V(
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.6 EUR
10+ 2.15 EUR
100+ 1.67 EUR
500+ 1.41 EUR
1000+ 1.08 EUR
5000+ 1.03 EUR
10000+ 1.02 EUR
Mindestbestellmenge: 2
IPB70N04S4-06 IPB70N04S4-06 Infineon Technologies Infineon_IPP_B_I70N04S4_06_DS_v01_00_en-1730685.pdf MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.33 EUR
10+ 2.76 EUR
100+ 2.2 EUR
250+ 2.02 EUR
500+ 1.87 EUR
1000+ 1.59 EUR
2000+ 1.51 EUR
IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
10+ 2.76 EUR
100+ 2.19 EUR
500+ 1.86 EUR
Mindestbestellmenge: 6
IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.57 EUR
Mindestbestellmenge: 1000
IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17990 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 11
IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.68 EUR
10000+ 0.65 EUR
Mindestbestellmenge: 5000
IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon_IPC70N04S5_4R6_DS_v01_00_EN-1227164.pdf MOSFET MOSFET_(20V,40V)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.72 EUR
10+ 1.31 EUR
100+ 1.08 EUR
500+ 0.93 EUR
1000+ 0.72 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies Infineon_IPC70N04S5L_4R2_DS_v01_00_EN-1226982.pdf MOSFET MOSFET_(20V,40V)
auf Bestellung 10000 Stücke:
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2+1.74 EUR
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100+ 1.09 EUR
500+ 0.94 EUR
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5000+ 0.68 EUR
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IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910 Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14790 Stücke:
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IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910 Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies 5511694646377774infineon-ipc70n04s5l-4r2-ds-v01_00-en.pdffileid5546d46258fc0bc101.pdf Trans MOSFET N-CH 40V 70A Automotive 8-Pin TDSON EP T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
IPD70N03S4L-04 IPD70N03S4L-04 Infineon Technologies Infineon_IPD70N03S4L_04_DS_v02_01_EN-1731893.pdf MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
auf Bestellung 14072 Stücke:
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2+2.15 EUR
10+ 1.76 EUR
100+ 1.38 EUR
500+ 1.17 EUR
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IPD70N03S4L04ATMA1 IPD70N03S4L04ATMA1 Infineon Technologies Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Description: MOSFET N-CH 30V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 70A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 2500 Stücke:
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IPD70N03S4L04ATMA1 IPD70N03S4L04ATMA1 Infineon Technologies Infineon_IPD70N03S4L_04_DS_v02_01_EN-1731893.pdf MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
auf Bestellung 13378 Stücke:
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IPD70N03S4L04ATMA1 IPD70N03S4L04ATMA1 Infineon Technologies Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Description: MOSFET N-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 70A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 5027 Stücke:
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IPI70N04S4-06 IPI70N04S4-06 Infineon Technologies Infineon_IPP_B_I70N04S4_06_DS_v01_00_en-1730685.pdf MOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T2
auf Bestellung 786 Stücke:
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1+3.33 EUR
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100+ 2.2 EUR
250+ 2.02 EUR
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1000+ 1.59 EUR
2500+ 1.51 EUR
IPI70N04S406AKSA1 IPI70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 500 Stücke:
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IPP070N08N3GXKSA1 IPP070N08N3GXKSA1 Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 7700 Stücke:
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310+1.58 EUR
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IPP70N04S406AKSA1 IPP70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98 Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 59390 Stücke:
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304+1.61 EUR
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IXFA270N06T3 IXFA270N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 270A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 300 Stücke:
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300+6.48 EUR
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IXFH270N06T3 IXFH270N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 300 Stücke:
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300+7.82 EUR
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IXTH270N04T4 IXTH270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
auf Bestellung 22 Stücke:
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13+5.91 EUR
14+ 5.31 EUR
18+ 4.16 EUR
19+ 3.95 EUR
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IXTH270N04T4 IXTH270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.91 EUR
14+ 5.31 EUR
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19+ 3.95 EUR
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IXTP170N075T2 IXTP170N075T2 IXYS IXTA(P)170N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.02 EUR
20+ 3.62 EUR
25+ 2.93 EUR
26+ 2.77 EUR
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IXTP170N075T2 IXTP170N075T2 IXYS IXTA(P)170N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
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18+4.02 EUR
20+ 3.62 EUR
25+ 2.93 EUR
26+ 2.77 EUR
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IXTP170N075T2 IXTP170N075T2 IXYS media-3323071.pdf MOSFET 170 Amps 75V
auf Bestellung 112 Stücke:
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1+6.41 EUR
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250+ 4.21 EUR
500+ 3.98 EUR
IXTP270N04T4 IXTP270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
19+ 3.9 EUR
23+ 3.19 EUR
24+ 3 EUR
Mindestbestellmenge: 17
IXTP270N04T4 IXTP270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.33 EUR
19+ 3.9 EUR
23+ 3.19 EUR
24+ 3 EUR
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IXTP270N04T4 IXTP270N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
auf Bestellung 300 Stücke:
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3+6.86 EUR
50+ 5.44 EUR
100+ 4.66 EUR
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IXTP70N075T2 IXTP70N075T2 IXYS media-3321318.pdf MOSFET 70 Amps 75V 0.0120 Rds
auf Bestellung 71 Stücke:
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1+4.45 EUR
10+ 4 EUR
100+ 2.94 EUR
250+ 2.85 EUR
500+ 2.52 EUR
1000+ 2.36 EUR
L-0805 47UH 30% 7.0MA // LQM21FN470N00L MURATA L-0805 47uH ±30% 7.0mA 1.2 Ohm 7.5MHz
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
22+0.43 EUR
Mindestbestellmenge: 22
LQM21DN470N00L LQM21DN470N00L Murata Electronics JELF243B-0004.pdf Description: FIXED IND 47UH 7MA 1.2 OHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.2Ohm Max
Frequency - Self Resonant: 7.5MHz
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 7456 Stücke:
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44+0.4 EUR
53+ 0.33 EUR
58+ 0.31 EUR
63+ 0.28 EUR
100+ 0.25 EUR
250+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 44
LQM21DN470N00L LQM21DN470N00L Murata Electronics JELF243B-0004.pdf Description: FIXED IND 47UH 7MA 1.2 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.2Ohm Max
Frequency - Self Resonant: 7.5MHz
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
LQM21FN470N00L LQM21FN470N00L Murata Electronics JELF243B-0006.pdf Description: FIXED IND 47UH 7MA 780 MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 780mOhm Max
Frequency - Self Resonant: 7.5MHz
Current - Saturation (Isat): 7mA
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
LQM21FN470N00L LQM21FN470N00L Murata Electronics JELF243B-0006.pdf Description: FIXED IND 47UH 7MA 780 MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 780mOhm Max
Frequency - Self Resonant: 7.5MHz
Current - Saturation (Isat): 7mA
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 4205 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
48+ 0.37 EUR
52+ 0.34 EUR
57+ 0.31 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 39
MCTL270N04Y-TP MCTL270N04Y-TP Micro Commercial Co PdfFile235021.pdf Description: N-CHANNEL MOSFET, TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 391W (Tj)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.54 EUR
Mindestbestellmenge: 2000
MCTL270N04Y-TP MCTL270N04Y-TP Micro Commercial Co PdfFile235021.pdf Description: N-CHANNEL MOSFET, TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 391W (Tj)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.21 EUR
10+ 4.38 EUR
100+ 3.54 EUR
500+ 3.15 EUR
1000+ 2.7 EUR
Mindestbestellmenge: 4
MCTL270N04Y-TP MCTL270N04Y-TP Micro Commercial Components (MCC) PdfFile235021.pdf MOSFET
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.26 EUR
10+ 4.42 EUR
25+ 4.17 EUR
100+ 3.59 EUR
250+ 3.4 EUR
500+ 3.17 EUR
1000+ 2.73 EUR
50M040070N003 5020.PDF
50M040070N003
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.213" (5.40mm)
Length - Below Head: 0.118" (3.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
87+ 0.2 EUR
100+ 0.18 EUR
121+ 0.15 EUR
129+ 0.14 EUR
135+ 0.13 EUR
250+ 0.12 EUR
500+ 0.11 EUR
Mindestbestellmenge: 77
50M040070N006 1499569-pdf.pdf
50M040070N006
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.331" (8.40mm)
Length - Below Head: 0.236" (6.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
67+0.26 EUR
91+ 0.19 EUR
122+ 0.15 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 67
50M040070N008 1499570-pdf.pdf
50M040070N008
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.409" (10.40mm)
Length - Below Head: 0.315" (8.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 4422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
132+ 0.13 EUR
157+ 0.11 EUR
187+ 0.094 EUR
200+ 0.088 EUR
208+ 0.085 EUR
250+ 0.075 EUR
500+ 0.071 EUR
1000+ 0.068 EUR
Mindestbestellmenge: 112
50M040070N010 5020.PDF
50M040070N010
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.488" (12.40mm)
Length - Below Head: 0.394" (10.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 30949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
132+ 0.13 EUR
154+ 0.11 EUR
186+ 0.095 EUR
198+ 0.089 EUR
207+ 0.085 EUR
250+ 0.076 EUR
500+ 0.072 EUR
1000+ 0.068 EUR
Mindestbestellmenge: 112
50M040070N012 1499572-pdf.pdf
50M040070N012
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.567" (14.40mm)
Length - Below Head: 0.472" (12.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
85+ 0.21 EUR
100+ 0.18 EUR
120+ 0.15 EUR
127+ 0.14 EUR
132+ 0.13 EUR
250+ 0.12 EUR
500+ 0.11 EUR
Mindestbestellmenge: 72
50M040070N016 skuAsset?mediaId=168430
50M040070N016
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.724" (18.40mm)
Length - Below Head: 0.630" (16.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
132+ 0.13 EUR
152+ 0.12 EUR
184+ 0.096 EUR
196+ 0.09 EUR
205+ 0.086 EUR
250+ 0.077 EUR
500+ 0.073 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 112
50M040070N020 skuAsset?mediaId=168431
50M040070N020
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 0.882" (22.40mm)
Length - Below Head: 0.787" (20.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
99+ 0.18 EUR
130+ 0.14 EUR
Mindestbestellmenge: 72
50M040070N025 skuAsset?mediaId=168432
50M040070N025
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.079" (27.40mm)
Length - Below Head: 0.984" (25.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
129+ 0.14 EUR
152+ 0.12 EUR
182+ 0.097 EUR
194+ 0.091 EUR
202+ 0.087 EUR
250+ 0.078 EUR
500+ 0.074 EUR
1000+ 0.07 EUR
Mindestbestellmenge: 112
50M040070N030 skuAsset?mediaId=168433
50M040070N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.276" (32.40mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 2813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
81+ 0.22 EUR
95+ 0.19 EUR
114+ 0.16 EUR
121+ 0.15 EUR
126+ 0.14 EUR
250+ 0.12 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 72
50M040070N040 skuAsset?mediaId=168435
50M040070N040
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M4 X .7 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M4x0.7
Type: Machine Screw
Length - Overall: 1.669" (42.40mm)
Length - Below Head: 1.575" (40.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.315" (8.00mm)
Drive Type: Slotted
auf Bestellung 1299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
93+ 0.19 EUR
107+ 0.17 EUR
128+ 0.14 EUR
136+ 0.13 EUR
142+ 0.12 EUR
250+ 0.11 EUR
500+ 0.1 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 77
BSZ070N08LS5ATMA1 Infineon_BSZ070N08LS5_DataSheet_v02_03_EN-3360909.pdf
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 28254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.01 EUR
10+ 1.74 EUR
100+ 1.47 EUR
250+ 1.45 EUR
500+ 1.28 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 2
BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
auf Bestellung 4448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.13 EUR
100+ 1.7 EUR
500+ 1.43 EUR
1000+ 1.22 EUR
2000+ 1.16 EUR
Mindestbestellmenge: 7
BSZ070N08LS5ATMA1 22infineon-bsz070n08ls5-ds-v02_02-en.pdffileid5546d4625696ed760156e.pdf
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 80V 13A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BXT270N02M BXT270N02M.pdf
BXT270N02M
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
321+ 0.22 EUR
457+ 0.16 EUR
643+ 0.11 EUR
1283+ 0.056 EUR
1701+ 0.042 EUR
2305+ 0.031 EUR
2428+ 0.029 EUR
Mindestbestellmenge: 162
BXT270N02M BXT270N02M.pdf
BXT270N02M
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
321+ 0.22 EUR
457+ 0.16 EUR
643+ 0.11 EUR
1283+ 0.056 EUR
1701+ 0.042 EUR
2305+ 0.031 EUR
Mindestbestellmenge: 162
CEA270N00000030000 product-CEA270N00000030000.datasheet.pdf
Hersteller: TE Connectivity
Category: Unclassified
Description: CEA270N00000030000
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+59.97 EUR
9+ 51.82 EUR
36+ 49.75 EUR
Mindestbestellmenge: 2
D970N06T Infineon_D970N_DS_v03_01_en_de-3360112.pdf
D970N06T
Hersteller: Infineon Technologies
Rectifiers Rectifier Diode 970A 600V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+128.32 EUR
10+ 121.7 EUR
18+ 112.32 EUR
54+ 104.28 EUR
FQB70N08TM FAIRS18571-1.pdf?t.download=true&u=5oefqw
FQB70N08TM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 70A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 35A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
231+2.11 EUR
Mindestbestellmenge: 231
FQP70N08 FAIRS08209-1.pdf?t.download=true&u=5oefqw
FQP70N08
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 35A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
247+1.98 EUR
Mindestbestellmenge: 247
FR10870N0050J01 AVX_FR_Style-3162303.pdf
FR10870N0050J01
Hersteller: KYOCERA AVX
High Frequency/RF Resistors
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.72 EUR
10+ 20.66 EUR
25+ 18.59 EUR
50+ 16.02 EUR
100+ 14.71 EUR
250+ 13.94 EUR
500+ 13.43 EUR
G70N04T GOFORD-G70N04T.pdf
G70N04T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.43 EUR
Mindestbestellmenge: 2000
IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.59 EUR
10+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 7
IAUC70N08S5N074ATMA1 Infineon_IAUC70N08S5N074_DS_v01_00_EN-1578743.pdf
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(75V 120V(
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.6 EUR
10+ 2.15 EUR
100+ 1.67 EUR
500+ 1.41 EUR
1000+ 1.08 EUR
5000+ 1.03 EUR
10000+ 1.02 EUR
Mindestbestellmenge: 2
IPB70N04S4-06 Infineon_IPP_B_I70N04S4_06_DS_v01_00_en-1730685.pdf
IPB70N04S4-06
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.33 EUR
10+ 2.76 EUR
100+ 2.2 EUR
250+ 2.02 EUR
500+ 1.87 EUR
1000+ 1.59 EUR
2000+ 1.51 EUR
IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.31 EUR
10+ 2.76 EUR
100+ 2.19 EUR
500+ 1.86 EUR
Mindestbestellmenge: 6
IPB70N04S406ATMA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPB70N04S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.57 EUR
Mindestbestellmenge: 1000
IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 11
IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
10000+ 0.65 EUR
Mindestbestellmenge: 5000
IPC70N04S54R6ATMA1 Infineon_IPC70N04S5_4R6_DS_v01_00_EN-1227164.pdf
IPC70N04S54R6ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V,40V)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.72 EUR
10+ 1.31 EUR
100+ 1.08 EUR
500+ 0.93 EUR
1000+ 0.72 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
IPC70N04S5L4R2ATMA1 Infineon_IPC70N04S5L_4R2_DS_v01_00_EN-1226982.pdf
IPC70N04S5L4R2ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_(20V,40V)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.74 EUR
10+ 1.35 EUR
100+ 1.09 EUR
500+ 0.94 EUR
1000+ 0.72 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 2
IPC70N04S5L4R2ATMA1 Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910
IPC70N04S5L4R2ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 11
IPC70N04S5L4R2ATMA1 Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910
IPC70N04S5L4R2ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
10000+ 0.65 EUR
Mindestbestellmenge: 5000
IPC70N04S5L4R2ATMA1 5511694646377774infineon-ipc70n04s5l-4r2-ds-v01_00-en.pdffileid5546d46258fc0bc101.pdf
IPC70N04S5L4R2ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 70A Automotive 8-Pin TDSON EP T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
IPD70N03S4L-04 Infineon_IPD70N03S4L_04_DS_v02_01_EN-1731893.pdf
IPD70N03S4L-04
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
auf Bestellung 14072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.15 EUR
10+ 1.76 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
2500+ 0.9 EUR
5000+ 0.85 EUR
Mindestbestellmenge: 2
IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
IPD70N03S4L04ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 70A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.94 EUR
Mindestbestellmenge: 2500
IPD70N03S4L04ATMA1 Infineon_IPD70N03S4L_04_DS_v02_01_EN-1731893.pdf
IPD70N03S4L04ATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
auf Bestellung 13378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.15 EUR
10+ 1.76 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
2500+ 0.9 EUR
5000+ 0.85 EUR
Mindestbestellmenge: 2
IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
IPD70N03S4L04ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 70A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 5027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
10+ 1.85 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
IPI70N04S4-06 Infineon_IPP_B_I70N04S4_06_DS_v01_00_en-1730685.pdf
IPI70N04S4-06
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T2
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.33 EUR
10+ 2.76 EUR
100+ 2.2 EUR
250+ 2.02 EUR
500+ 1.85 EUR
1000+ 1.59 EUR
2500+ 1.51 EUR
IPI70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPI70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.31 EUR
10+ 2.76 EUR
100+ 2.19 EUR
500+ 1.86 EUR
Mindestbestellmenge: 6
IPP070N08N3GXKSA1 INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3GXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.58 EUR
Mindestbestellmenge: 310
IPP70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c501db65d98
IPP70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 59390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
304+1.61 EUR
Mindestbestellmenge: 304
IXFA270N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf
IXFA270N06T3
Hersteller: IXYS
Description: MOSFET N-CH 60V 270A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+6.48 EUR
Mindestbestellmenge: 300
IXFH270N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf
IXFH270N06T3
Hersteller: IXYS
Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+7.82 EUR
Mindestbestellmenge: 300
IXTH270N04T4 IXTH(P)270N04T4.pdf
IXTH270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.91 EUR
14+ 5.31 EUR
18+ 4.16 EUR
19+ 3.95 EUR
Mindestbestellmenge: 13
IXTH270N04T4 IXTH(P)270N04T4.pdf
IXTH270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.91 EUR
14+ 5.31 EUR
18+ 4.16 EUR
19+ 3.95 EUR
Mindestbestellmenge: 13
IXTP170N075T2 IXTA(P)170N075T2.pdf
IXTP170N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
25+ 2.93 EUR
26+ 2.77 EUR
Mindestbestellmenge: 18
IXTP170N075T2 IXTA(P)170N075T2.pdf
IXTP170N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
25+ 2.93 EUR
26+ 2.77 EUR
Mindestbestellmenge: 18
IXTP170N075T2 media-3323071.pdf
IXTP170N075T2
Hersteller: IXYS
MOSFET 170 Amps 75V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.41 EUR
10+ 5.37 EUR
50+ 5.05 EUR
100+ 4.44 EUR
250+ 4.21 EUR
500+ 3.98 EUR
IXTP270N04T4 IXTH(P)270N04T4.pdf
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.33 EUR
19+ 3.9 EUR
23+ 3.19 EUR
24+ 3 EUR
Mindestbestellmenge: 17
IXTP270N04T4 IXTH(P)270N04T4.pdf
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.33 EUR
19+ 3.9 EUR
23+ 3.19 EUR
24+ 3 EUR
Mindestbestellmenge: 17
IXTP270N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf
IXTP270N04T4
Hersteller: IXYS
Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.86 EUR
50+ 5.44 EUR
100+ 4.66 EUR
Mindestbestellmenge: 3
IXTP70N075T2 media-3321318.pdf
IXTP70N075T2
Hersteller: IXYS
MOSFET 70 Amps 75V 0.0120 Rds
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.45 EUR
10+ 4 EUR
100+ 2.94 EUR
250+ 2.85 EUR
500+ 2.52 EUR
1000+ 2.36 EUR
L-0805 47UH 30% 7.0MA // LQM21FN470N00L
Hersteller: MURATA
L-0805 47uH ±30% 7.0mA 1.2 Ohm 7.5MHz
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+0.43 EUR
Mindestbestellmenge: 22
LQM21DN470N00L JELF243B-0004.pdf
LQM21DN470N00L
Hersteller: Murata Electronics
Description: FIXED IND 47UH 7MA 1.2 OHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.2Ohm Max
Frequency - Self Resonant: 7.5MHz
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 7456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
53+ 0.33 EUR
58+ 0.31 EUR
63+ 0.28 EUR
100+ 0.25 EUR
250+ 0.24 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 44
LQM21DN470N00L JELF243B-0004.pdf
LQM21DN470N00L
Hersteller: Murata Electronics
Description: FIXED IND 47UH 7MA 1.2 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 1.2Ohm Max
Frequency - Self Resonant: 7.5MHz
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
LQM21FN470N00L JELF243B-0006.pdf
LQM21FN470N00L
Hersteller: Murata Electronics
Description: FIXED IND 47UH 7MA 780 MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 780mOhm Max
Frequency - Self Resonant: 7.5MHz
Current - Saturation (Isat): 7mA
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
Mindestbestellmenge: 3000
LQM21FN470N00L JELF243B-0006.pdf
LQM21FN470N00L
Hersteller: Murata Electronics
Description: FIXED IND 47UH 7MA 780 MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±30%
Package / Case: 0805 (2012 Metric)
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Multilayer
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR): 780mOhm Max
Frequency - Self Resonant: 7.5MHz
Current - Saturation (Isat): 7mA
Material - Core: Ferrite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 0805 (2012 Metric)
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Inductance: 47 µH
Current Rating (Amps): 7 mA
auf Bestellung 4205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
48+ 0.37 EUR
52+ 0.34 EUR
57+ 0.31 EUR
100+ 0.27 EUR
500+ 0.24 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 39
MCTL270N04Y-TP PdfFile235021.pdf
MCTL270N04Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 391W (Tj)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2.54 EUR
Mindestbestellmenge: 2000
MCTL270N04Y-TP PdfFile235021.pdf
MCTL270N04Y-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 391W (Tj)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.21 EUR
10+ 4.38 EUR
100+ 3.54 EUR
500+ 3.15 EUR
1000+ 2.7 EUR
Mindestbestellmenge: 4
MCTL270N04Y-TP PdfFile235021.pdf
MCTL270N04Y-TP
Hersteller: Micro Commercial Components (MCC)
MOSFET
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.26 EUR
10+ 4.42 EUR
25+ 4.17 EUR
100+ 3.59 EUR
250+ 3.4 EUR
500+ 3.17 EUR
1000+ 2.73 EUR
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