Suchergebnisse für "8n60" : > 60

Wählen Sie Seite:   1 2  Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FQPF8N60C FQPF8N60C
Produktcode: 13455
zu Favoriten hinzufügen Lieblingsprodukt

Fairchild fqpf8n60c-d.pdf description Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 07.05.2015
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 965/28
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 174 Stück
1 Stück - stock Köln
173 Stück - lieferbar in 3-4 Wochen
erwartet: 20 Stück
1+1.26 EUR
10+1.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
8N60 FSC TO-220 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60 BYD
auf Bestellung 53000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60C FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60L
auf Bestellung 7002 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
598-8N60-107F 598-8N60-107F Dialight C18661.pdf Description: LED GRN/YLW CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green, Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 49mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 140°
Height (Max): 0.35mm
Wavelength - Dominant: 570nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
54+0.33 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CFT Fairchaild fqpf8n60cf-d.pdf MOSFET N-CH 600V 6.26A TO-220F
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+11.42 EUR
10+10.85 EUR
100+10.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CFT ONS fqpf8n60cf-d.pdf MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
1+23.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CYDTU FQPF8N60CYDTU Fairchild Semiconductor FAIRS25225-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 7.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 1924 Stücke:
Lieferzeit 10-14 Tag (e)
286+1.77 EUR
Mindestbestellmenge: 286
Im Einkaufswagen  Stück im Wert von  UAH
IXFA18N60X IXFA18N60X IXYS IXFA(H,P)18N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
10+7.45 EUR
11+6.94 EUR
50+6.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFA18N60X IXFA18N60X IXYS IXFA(H,P)18N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.28 EUR
10+7.45 EUR
11+6.94 EUR
50+6.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P IXYS IXFH18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
12+6.42 EUR
14+5.12 EUR
15+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P IXYS IXFH18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 283 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+6.42 EUR
14+5.12 EUR
15+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.07 EUR
30+6.82 EUR
120+5.81 EUR
510+5.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60X IXFH18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.65 EUR
9+8.02 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60X IXFH18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.65 EUR
9+8.02 EUR
30+7.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
3+23.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXFK48N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_48n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.39 EUR
25+21.40 EUR
100+18.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X IXFP18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.24 EUR
10+7.36 EUR
11+6.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X IXFP18N60X IXYS IXFA(H,P)18N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.24 EUR
10+7.36 EUR
11+6.96 EUR
50+6.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFR48N60P IXFR48N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr48n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 32A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.25 EUR
30+21.56 EUR
120+19.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate charge: 110nC
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.13 EUR
13+5.52 EUR
16+4.66 EUR
17+4.40 EUR
50+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate charge: 110nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.13 EUR
13+5.52 EUR
16+4.66 EUR
17+4.40 EUR
50+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1746 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.75 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IXGH28N60B3D1 IXGH28N60B3D1 IXYS littelfuse_discrete_igbts_pt_ixgh28n60b3d1_datasheet.pdf.pdf Description: IGBT PT 600V 66A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 340µJ (on), 650µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.47 EUR
30+8.45 EUR
120+7.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60A3 IXGH48N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf.pdf Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.21 EUR
30+6.52 EUR
120+6.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60A3D1 IXGH48N60A3D1 IXYS littelfuse_discrete_igbts_pt_ixgh48n60a3d1_datasheet.pdf.pdf Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.17 EUR
30+8.89 EUR
120+7.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate charge: 115nC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate charge: 115nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
3+27.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate charge: 115nC
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.25 EUR
9+7.98 EUR
10+7.55 EUR
25+7.45 EUR
30+7.34 EUR
90+7.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate charge: 115nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 339 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.25 EUR
9+7.98 EUR
10+7.55 EUR
25+7.45 EUR
30+7.34 EUR
90+7.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.61 EUR
9+8.32 EUR
10+7.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 266 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.61 EUR
9+8.32 EUR
10+7.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixgh48n60c3d1_datasheet.pdf.pdf Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.20 EUR
30+10.84 EUR
120+9.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGP48N60A3 IXGP48N60A3 IXYS media?resourcetype=datasheets&itemid=ffcf00ed-e88e-4ffe-ba28-de9ec4168ec3&filename=littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf Description: IGBT PT 600V 120A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.42 EUR
50+4.94 EUR
100+4.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXGR48N60C3D1 IXYS IXGR48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
4+23.22 EUR
5+14.89 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXGR48N60C3D1 IXYS IXGR48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
4+23.22 EUR
5+14.89 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixgr48n60c3d1_datasheet.pdf.pdf Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
2+27.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXGR48N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixgr48n60c3d1_datasheet.pdf.pdf Description: IGBT PT 600V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 125 W
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.74 EUR
30+18.48 EUR
120+16.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NDF08N60ZG NDF08N60ZG onsemi NDF08N60Z.pdf Description: MOSFET N-CH 600V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 55666 Stücke:
Lieferzeit 10-14 Tag (e)
523+0.96 EUR
Mindestbestellmenge: 523
Im Einkaufswagen  Stück im Wert von  UAH
NDF08N60ZH NDF08N60ZH onsemi Description: MOSFET N-CH 600V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 9417 Stücke:
Lieferzeit 10-14 Tag (e)
579+0.88 EUR
Mindestbestellmenge: 579
Im Einkaufswagen  Stück im Wert von  UAH
SIHA18N60E-GE3 SIHA18N60E-GE3 Vishay Siliconix siha18n60e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.99 EUR
10+4.60 EUR
100+3.24 EUR
500+2.66 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHB068N60EF-GE3 SIHB068N60EF-GE3 Vishay Siliconix sihb068n60ef.pdf Description: MOSFET N-CH 600V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 3923 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.60 EUR
50+5.49 EUR
100+5.15 EUR
500+4.31 EUR
1000+4.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHB28N60EF-GE3 SIHB28N60EF-GE3 Vishay Siliconix sihb28n60ef.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.00 EUR
50+5.71 EUR
100+5.48 EUR
500+4.74 EUR
1000+4.70 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHF068N60EF-GE3 SIHF068N60EF-GE3 Vishay Siliconix sihf068n60ef.pdf Description: MOSFET N-CH 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
50+5.35 EUR
100+5.08 EUR
500+4.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHG018N60E-GE3 SIHG018N60E-GE3 Vishay Siliconix sihg018n60e.pdf Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.04 EUR
25+19.09 EUR
100+16.48 EUR
500+16.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG068N60EF-GE3 SIHG068N60EF-GE3 Vishay Siliconix sihg068n60ef.pdf Description: MOSFET N-CH 600V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.32 EUR
10+7.63 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHG28N60EF-GE3 SIHG28N60EF-GE3 Vishay Siliconix sihg28n60ef.pdf Description: MOSFET N-CH 600V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.11 EUR
10+8.19 EUR
100+5.97 EUR
500+5.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHH068N60E-T1-GE3 SIHH068N60E-T1-GE3 Vishay Siliconix sihh068n60e.pdf Description: MOSFET N-CH 600V 34A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 100 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.97 EUR
10+10.52 EUR
100+8.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 Vishay Siliconix sihj8n60e.pdf Description: MOSFET N-CH 600V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 2881 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
10+3.20 EUR
100+2.21 EUR
500+1.78 EUR
1000+1.65 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP38N60E-GE3 SIHP38N60E-GE3 Vishay Siliconix sihp38n60e.pdf Description: MOSFET N-CH 600V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.96 EUR
50+6.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.86 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.67 EUR
10+3.69 EUR
100+2.57 EUR
500+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60M2 STB18N60M2 STMicroelectronics en.DM00086800.pdf Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1788 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.89 EUR
10+2.99 EUR
100+2.15 EUR
500+1.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60M2 STB18N60M2 STMicroelectronics en.DM00086800.pdf Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.66 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB28N60DM2 STB28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.30 EUR
10+4.92 EUR
100+3.48 EUR
500+2.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD18N60M6 STD18N60M6 STMicroelectronics std18n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 16.8nC
auf Bestellung 2278 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.57 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
STD18N60M6 STD18N60M6 STMicroelectronics std18n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 16.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2278 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.86 EUR
28+2.57 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60C
Produktcode: 13455
zu Favoriten hinzufügen Lieblingsprodukt

description fqpf8n60c-d.pdf
FQPF8N60C
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 07.05.2015
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 965/28
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 174 Stück
1 Stück - stock Köln
173 Stück - lieferbar in 3-4 Wochen
erwartet: 20 Stück
Anzahl Preis
1+1.26 EUR
10+1.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
8N60
Hersteller: FSC
TO-220 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60
Hersteller: BYD
auf Bestellung 53000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N60L
auf Bestellung 7002 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
598-8N60-107F C18661.pdf
598-8N60-107F
Hersteller: Dialight
Description: LED GRN/YLW CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green, Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 49mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 140°
Height (Max): 0.35mm
Wavelength - Dominant: 570nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
54+0.33 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CFT fqpf8n60cf-d.pdf
Hersteller: Fairchaild
MOSFET N-CH 600V 6.26A TO-220F
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+11.42 EUR
10+10.85 EUR
100+10.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CFT fqpf8n60cf-d.pdf
Hersteller: ONS
MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+23.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF8N60CYDTU FAIRS25225-1.pdf?t.download=true&u=5oefqw
FQPF8N60CYDTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 7.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 1924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.77 EUR
Mindestbestellmenge: 286
Im Einkaufswagen  Stück im Wert von  UAH
IXFA18N60X IXFA(H,P)18N60X.pdf
IXFA18N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.28 EUR
10+7.45 EUR
11+6.94 EUR
50+6.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFA18N60X IXFA(H,P)18N60X.pdf
IXFA18N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.28 EUR
10+7.45 EUR
11+6.94 EUR
50+6.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P.pdf
IXFH18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
12+6.42 EUR
14+5.12 EUR
15+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P IXFH18N60P.pdf
IXFH18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 283 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.14 EUR
12+6.42 EUR
14+5.12 EUR
15+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf
IXFH18N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.07 EUR
30+6.82 EUR
120+5.81 EUR
510+5.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60X IXFA(H,P)18N60X.pdf
IXFH18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.65 EUR
9+8.02 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH18N60X IXFA(H,P)18N60X.pdf
IXFH18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.65 EUR
9+8.02 EUR
30+7.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
3+23.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_48n60p_datasheet.pdf.pdf
IXFK48N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.39 EUR
25+21.40 EUR
100+18.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X IXFA(H,P)18N60X.pdf
IXFP18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.24 EUR
10+7.36 EUR
11+6.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X IXFA(H,P)18N60X.pdf
IXFP18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.24 EUR
10+7.36 EUR
11+6.96 EUR
50+6.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFR48N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr48n60p_datasheet.pdf.pdf
IXFR48N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 32A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.25 EUR
30+21.56 EUR
120+19.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate charge: 110nC
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
13+5.52 EUR
16+4.66 EUR
17+4.40 EUR
50+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate charge: 110nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.13 EUR
13+5.52 EUR
16+4.66 EUR
17+4.40 EUR
50+4.39 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+6.52 EUR
100+4.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.75 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IXGH28N60B3D1 littelfuse_discrete_igbts_pt_ixgh28n60b3d1_datasheet.pdf.pdf
IXGH28N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 66A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 340µJ (on), 650µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.47 EUR
30+8.45 EUR
120+7.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60A3 littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf.pdf
IXGH48N60A3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.21 EUR
30+6.52 EUR
120+6.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60A3D1 littelfuse_discrete_igbts_pt_ixgh48n60a3d1_datasheet.pdf.pdf
IXGH48N60A3D1
Hersteller: IXYS
Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.17 EUR
30+8.89 EUR
120+7.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate charge: 115nC
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate charge: 115nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+27.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate charge: 115nC
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.25 EUR
9+7.98 EUR
10+7.55 EUR
25+7.45 EUR
30+7.34 EUR
90+7.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate charge: 115nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 339 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.25 EUR
9+7.98 EUR
10+7.55 EUR
25+7.45 EUR
30+7.34 EUR
90+7.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.61 EUR
9+8.32 EUR
10+7.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 266 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.61 EUR
9+8.32 EUR
10+7.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 littelfuse_discrete_igbts_pt_ixgh48n60c3d1_datasheet.pdf.pdf
IXGH48N60C3D1
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.20 EUR
30+10.84 EUR
120+9.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGP48N60A3 media?resourcetype=datasheets&itemid=ffcf00ed-e88e-4ffe-ba28-de9ec4168ec3&filename=littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf
IXGP48N60A3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
50+4.94 EUR
100+4.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXGR48N60C3D1.pdf
IXGR48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.22 EUR
5+14.89 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 IXGR48N60C3D1.pdf
IXGR48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 26A
Pulsed collector current: 230A
Turn-on time: 45ns
Turn-off time: 187ns
Gate charge: 77nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+23.22 EUR
5+14.89 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 littelfuse_discrete_igbts_pt_ixgr48n60c3d1_datasheet.pdf.pdf
Hersteller: IXYS
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+27.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXGR48N60C3D1 littelfuse_discrete_igbts_pt_ixgr48n60c3d1_datasheet.pdf.pdf
IXGR48N60C3D1
Hersteller: IXYS
Description: IGBT PT 600V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 125 W
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.74 EUR
30+18.48 EUR
120+16.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NDF08N60ZG NDF08N60Z.pdf
NDF08N60ZG
Hersteller: onsemi
Description: MOSFET N-CH 600V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 55666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
523+0.96 EUR
Mindestbestellmenge: 523
Im Einkaufswagen  Stück im Wert von  UAH
NDF08N60ZH
NDF08N60ZH
Hersteller: onsemi
Description: MOSFET N-CH 600V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-2 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 9417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
579+0.88 EUR
Mindestbestellmenge: 579
Im Einkaufswagen  Stück im Wert von  UAH
SIHA18N60E-GE3 siha18n60e.pdf
SIHA18N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.99 EUR
10+4.60 EUR
100+3.24 EUR
500+2.66 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHB068N60EF-GE3 sihb068n60ef.pdf
SIHB068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 3923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.60 EUR
50+5.49 EUR
100+5.15 EUR
500+4.31 EUR
1000+4.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHB28N60EF-GE3 sihb28n60ef.pdf
SIHB28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.00 EUR
50+5.71 EUR
100+5.48 EUR
500+4.74 EUR
1000+4.70 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHF068N60EF-GE3 sihf068n60ef.pdf
SIHF068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
50+5.35 EUR
100+5.08 EUR
500+4.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHG018N60E-GE3 sihg018n60e.pdf
SIHG018N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.04 EUR
25+19.09 EUR
100+16.48 EUR
500+16.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHG068N60EF-GE3 sihg068n60ef.pdf
SIHG068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.32 EUR
10+7.63 EUR
100+5.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHG28N60EF-GE3 sihg28n60ef.pdf
SIHG28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
10+8.19 EUR
100+5.97 EUR
500+5.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHH068N60E-T1-GE3 sihh068n60e.pdf
SIHH068N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 34A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 100 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.97 EUR
10+10.52 EUR
100+8.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHJ8N60E-T1-GE3 sihj8n60e.pdf
SIHJ8N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 2881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.20 EUR
100+2.21 EUR
500+1.78 EUR
1000+1.65 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP38N60E-GE3 sihp38n60e.pdf
SIHP38N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
50+6.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.86 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+3.69 EUR
100+2.57 EUR
500+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60M2 en.DM00086800.pdf
STB18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.99 EUR
100+2.15 EUR
500+1.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60M2 en.DM00086800.pdf
STB18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.66 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
STB28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.30 EUR
10+4.92 EUR
100+3.48 EUR
500+2.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD18N60M6 std18n60m6.pdf
STD18N60M6
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 16.8nC
auf Bestellung 2278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.57 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
STD18N60M6 std18n60m6.pdf
STD18N60M6
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 38A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 16.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2278 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.57 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  Nächste Seite >> ]