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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF1404PBF Produktcode: 31360 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 162 Rds(on), Ohm: 01.04.2000 Ciss, pF/Qg, nC: 7360/160 JHGF: THT |
auf Bestellung 815 Stück: Lieferzeit 21-28 Tag (e)erwartet 3 Stück: |
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IRF1404ZPBF Produktcode: 26520 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 40 Idd,A: 75 Rds(on), Ohm: 0.0037 JHGF: THT |
auf Bestellung 186 Stück: Lieferzeit 21-28 Tag (e) |
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F1404 | C&K | Switch Bezels / Switch Caps Pushbutton |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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F1404 | C&K | Switch Access Solid Button Push Button Switch |
auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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F1404S |
auf Bestellung 8289 Stücke: Lieferzeit 21-28 Tag (e) |
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311AS001NF1404 | Glenair | Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR RC LOW STRAIGHT |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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311AS039NF1404 | Glenair | Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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370FS001NF1404A3 | Glenair | Circular MIL Spec Backshells 26+ Pcs start 4 weeks |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404 | International Rectifier |
MOSFET N-CH 40V 202A Automotive AUIRF1404 International Rectifier TAUIRF1404 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRF1404 | International Rectifier |
Description: AUIRF1404 - 20V-40V N-CHANNEL AU Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V |
auf Bestellung 46159 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404 | Infineon Technologies |
Description: AUIRF1404 - 20V-40V N-CHANNEL AU Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V |
auf Bestellung 28597 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404S | International Rectifier |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 25431 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404STRL | Infineon Technologies |
Description: MOSFET_(20V,40V) Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404ZS | International Rectifier |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404ZSTRL | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms |
auf Bestellung 771 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1404ZSTRL | International Rectifier |
Description: MOSFET N-CH 40V 160A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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CBM-7530BF-140-454 | CUI Devices |
Description: DC BLOWER, 75.7 X 75.7 X 30 MM, Packaging: Box Features: Auto Restart Voltage - Rated: 12VDC Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H Bearing Type: Ball RPM: 4000 RPM Air Flow: 13.6 CFM (0.381m³/min) Width: 30.00mm Operating Temperature: 14 ~ 158°F (-10 ~ 70°C) Termination: 2 Wire Leads Approval Agency: CE, cURus, TUV Fan Type: Blower Noise: 48.1dB(A) Static Pressure: 0.640 in H2O (159.4 Pa) Power (Watts): 4.44 W |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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CBM-7530BF-140-454 | CUI Devices | Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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CBM-7530BF-140-454-20 | CUI Devices |
Description: DC BLOWER, 75.7 X 75.7 X 30 MM, Packaging: Box Features: Auto Restart, Speed Sensor (Tach) Voltage - Rated: 12VDC Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H Bearing Type: Ball RPM: 4000 RPM Air Flow: 13.6 CFM (0.381m³/min) Width: 30.00mm Operating Temperature: 14 ~ 158°F (-10 ~ 70°C) Termination: 3 Wire Leads Approval Agency: CE, cURus, TUV Fan Type: Blower Noise: 48.1dB(A) Static Pressure: 0.640 in H2O (159.4 Pa) Power (Watts): 4.44 W |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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CBM-7530BF-140-454-20 | CUI Devices | Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM, TS |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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ERJ-6ENF1404V | Panasonic Electronic Components |
Description: RES SMD 1.4M OHM 1% 1/8W 0805 Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 1.4 mOhms |
auf Bestellung 60639 Stücke: Lieferzeit 10-14 Tag (e) |
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ERJ-6ENF1404V | Panasonic | Thick Film Resistors - SMD 0805 1.4Mohms 1% Tol AEC-Q200 |
auf Bestellung 48214 Stücke: Lieferzeit 10-14 Tag (e) |
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ERJ-6ENF1404V | Panasonic Electronic Components |
Description: RES SMD 1.4M OHM 1% 1/8W 0805 Packaging: Tape & Reel (TR) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 1.4 mOhms |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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ERJ6ENF1404V | PANASONIC |
Category: SMD resistors Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C Power: 0.125W Resistance: 1.4MΩ Conform to the norm: AEC Q200 Tolerance: ±1% Temperature coefficient: 100ppm/°C Type of resistor: thick film Case - mm: 2012 Case - inch: 0805 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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ERJ6ENF1404V | PANASONIC |
Category: SMD resistors Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C Power: 0.125W Resistance: 1.4MΩ Conform to the norm: AEC Q200 Tolerance: ±1% Temperature coefficient: 100ppm/°C Type of resistor: thick film Case - mm: 2012 Case - inch: 0805 Anzahl je Verpackung: 5000 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Mounting: THT Case: TO262 Power dissipation: 200W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 162A Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 40V |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Mounting: THT Case: TO262 Power dissipation: 200W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 162A Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404LPBF | Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC |
auf Bestellung 3363 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404LPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 162A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 7652 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Mounting: THT Case: TO220AB Power dissipation: 200W Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 4mΩ Drain current: 162A Gate charge: 160nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Mounting: THT Case: TO220AB Power dissipation: 200W Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 4mΩ Drain current: 162A Gate charge: 160nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404PBF | Infineon Technologies | MOSFET 40V 202A 4mOhm 160nC |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 202A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V |
auf Bestellung 2237 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404STR | International Rectifier |
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s Anzahl je Verpackung: 6 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404STRL | International Rectifier |
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 162A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 162A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404STRLPBF | Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC |
auf Bestellung 6756 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Mounting: THT Case: TO220AB Power dissipation: 220W Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.7mΩ Drain current: 190A Gate charge: 0.1µC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Mounting: THT Case: TO220AB Power dissipation: 220W Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.7mΩ Drain current: 190A Gate charge: 0.1µC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404ZPBF | Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg |
auf Bestellung 9670 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404ZPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404ZS | International Rectifier |
Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK IRF1404ZS Infineon TIRF1404zs Anzahl je Verpackung: 10 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 4436 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404ZSTRLPBF | Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR10EZPF1404 | Rohm Semiconductor |
Description: RES SMD 1.4M OHM 1% 1/8W 0805 Packaging: Tape & Reel (TR) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 1.4 mOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR10EZPF1404 | Rohm Semiconductor |
Description: RES SMD 1.4M OHM 1% 1/8W 0805 Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 1.4 mOhms |
auf Bestellung 9414 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR10EZPF1404 | ROHM Semiconductor | Thick Film Resistors - SMD 0805 1.4Mohm 1% High Voltage |
auf Bestellung 4890 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1404-000 | LITTELFUSE |
Category: SMD Polymer Fuses Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch Type of fuse: PTC polymer Current rating: 0.75A Switched current: 1.5A Max. voltage: 13.2V Fuse size: 1812 Power: 1W Min. resistance: 110mΩ Max resistance: 450mΩ A dimension: 4.73mm B dimension: 3.41mm C dimension: 0.62mm D dimension: 0.95mm E dimension: 0.2mm Operating temperature: -40...85°C Trade name: Polyswitch |
auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) |
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RF1404-000 | LITTELFUSE |
Category: SMD Polymer Fuses Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch Type of fuse: PTC polymer Current rating: 0.75A Switched current: 1.5A Max. voltage: 13.2V Fuse size: 1812 Power: 1W Min. resistance: 110mΩ Max resistance: 450mΩ A dimension: 4.73mm B dimension: 3.41mm C dimension: 0.62mm D dimension: 0.95mm E dimension: 0.2mm Operating temperature: -40...85°C Trade name: Polyswitch Anzahl je Verpackung: 1 Stücke |
auf Bestellung 788 Stücke: Lieferzeit 7-14 Tag (e) |
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RF1404C | RFMi | Signal Conditioning 227 Ohms 12 V 433.8 to 434.12 MHz 2.4 dB SM5050-8 SMD/SMT 700 kHz |
auf Bestellung 7862 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1404D | RFMi | Signal Conditioning 2853 Ohms, 2411 Ohms 12 V 433.8 to 434.12 MHz 1.6 dB SM3838-8 SMD/SMT 600 kHz |
auf Bestellung 4562 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF1404 | JSMicro Semiconductor | Tranzystor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; Equivalent: IRF1404; IRF1404 JSMICRO TIRF1404 JSM |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404PBF | International Rectifier Corporation | TO-220 |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404Z | International Rectifier | N-MOSFET HEXFET 40V 75A 200W 0,0037Ω IRF1404Z TIRF1404z |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404ZPBF | International Rectifier Corporation | TO-220AB |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404ZPBF; 190A; 40V; 220W; 0.0037R; N-канальный; HEXFET; Корпус: TO-220; INFINEON (IRF) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MF1404AT |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
IRF1404PBF Produktcode: 31360 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 40
Idd,A: 162
Rds(on), Ohm: 01.04.2000
Ciss, pF/Qg, nC: 7360/160
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 40
Idd,A: 162
Rds(on), Ohm: 01.04.2000
Ciss, pF/Qg, nC: 7360/160
JHGF: THT
auf Bestellung 815 Stück:
Lieferzeit 21-28 Tag (e)erwartet 3 Stück:
IRF1404ZPBF Produktcode: 26520 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 40
Idd,A: 75
Rds(on), Ohm: 0.0037
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 40
Idd,A: 75
Rds(on), Ohm: 0.0037
JHGF: THT
auf Bestellung 186 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1.28 EUR |
10+ | 1.2 EUR |
F1404 |
Hersteller: C&K
Switch Bezels / Switch Caps Pushbutton
Switch Bezels / Switch Caps Pushbutton
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.61 EUR |
10+ | 2.36 EUR |
100+ | 0.99 EUR |
500+ | 0.97 EUR |
1000+ | 0.8 EUR |
F1404 |
Hersteller: C&K
Switch Access Solid Button Push Button Switch
Switch Access Solid Button Push Button Switch
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
197+ | 0.8 EUR |
500+ | 0.6 EUR |
311AS001NF1404 |
Hersteller: Glenair
Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR RC LOW STRAIGHT
Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR RC LOW STRAIGHT
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 840.72 EUR |
2+ | 749.78 EUR |
311AS039NF1404 |
Hersteller: Glenair
Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR
Circular MIL Spec Strain Reliefs & Adapters LAMP BASE THRD ADPTR
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1004.8 EUR |
2+ | 876.83 EUR |
5+ | 842.86 EUR |
10+ | 600.78 EUR |
25+ | 541.43 EUR |
370FS001NF1404A3 |
Hersteller: Glenair
Circular MIL Spec Backshells 26+ Pcs start 4 weeks
Circular MIL Spec Backshells 26+ Pcs start 4 weeks
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1081.27 EUR |
2+ | 974.48 EUR |
AUIRF1404 |
Hersteller: International Rectifier
MOSFET N-CH 40V 202A Automotive AUIRF1404 International Rectifier TAUIRF1404
Anzahl je Verpackung: 10 Stücke
MOSFET N-CH 40V 202A Automotive AUIRF1404 International Rectifier TAUIRF1404
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 6.2 EUR |
AUIRF1404 |
Hersteller: International Rectifier
Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
auf Bestellung 46159 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 10.45 EUR |
AUIRF1404 |
Hersteller: Infineon Technologies
Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
auf Bestellung 28597 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 10.45 EUR |
AUIRF1404S |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 25431 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
90+ | 5.54 EUR |
AUIRF1404STRL |
Hersteller: Infineon Technologies
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
90+ | 5.54 EUR |
AUIRF1404ZS |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
197+ | 2.52 EUR |
AUIRF1404ZSTRL |
Hersteller: Infineon Technologies
MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms
MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms
auf Bestellung 771 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.02 EUR |
10+ | 5.05 EUR |
25+ | 4.79 EUR |
100+ | 4.1 EUR |
250+ | 3.85 EUR |
500+ | 3.63 EUR |
800+ | 3.12 EUR |
AUIRF1404ZSTRL |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.07 EUR |
10+ | 5.1 EUR |
100+ | 4.12 EUR |
AUIRF1404ZSTRL |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 552 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 3.28 EUR |
CBM-7530BF-140-454 |
Hersteller: CUI Devices
Description: DC BLOWER, 75.7 X 75.7 X 30 MM,
Packaging: Box
Features: Auto Restart
Voltage - Rated: 12VDC
Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H
Bearing Type: Ball
RPM: 4000 RPM
Air Flow: 13.6 CFM (0.381m³/min)
Width: 30.00mm
Operating Temperature: 14 ~ 158°F (-10 ~ 70°C)
Termination: 2 Wire Leads
Approval Agency: CE, cURus, TUV
Fan Type: Blower
Noise: 48.1dB(A)
Static Pressure: 0.640 in H2O (159.4 Pa)
Power (Watts): 4.44 W
Description: DC BLOWER, 75.7 X 75.7 X 30 MM,
Packaging: Box
Features: Auto Restart
Voltage - Rated: 12VDC
Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H
Bearing Type: Ball
RPM: 4000 RPM
Air Flow: 13.6 CFM (0.381m³/min)
Width: 30.00mm
Operating Temperature: 14 ~ 158°F (-10 ~ 70°C)
Termination: 2 Wire Leads
Approval Agency: CE, cURus, TUV
Fan Type: Blower
Noise: 48.1dB(A)
Static Pressure: 0.640 in H2O (159.4 Pa)
Power (Watts): 4.44 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.46 EUR |
CBM-7530BF-140-454 |
Hersteller: CUI Devices
Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM
Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.6 EUR |
10+ | 16.79 EUR |
25+ | 15.79 EUR |
50+ | 15.19 EUR |
100+ | 13.99 EUR |
250+ | 13.09 EUR |
500+ | 12.9 EUR |
CBM-7530BF-140-454-20 |
Hersteller: CUI Devices
Description: DC BLOWER, 75.7 X 75.7 X 30 MM,
Packaging: Box
Features: Auto Restart, Speed Sensor (Tach)
Voltage - Rated: 12VDC
Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H
Bearing Type: Ball
RPM: 4000 RPM
Air Flow: 13.6 CFM (0.381m³/min)
Width: 30.00mm
Operating Temperature: 14 ~ 158°F (-10 ~ 70°C)
Termination: 3 Wire Leads
Approval Agency: CE, cURus, TUV
Fan Type: Blower
Noise: 48.1dB(A)
Static Pressure: 0.640 in H2O (159.4 Pa)
Power (Watts): 4.44 W
Description: DC BLOWER, 75.7 X 75.7 X 30 MM,
Packaging: Box
Features: Auto Restart, Speed Sensor (Tach)
Voltage - Rated: 12VDC
Size / Dimension: Square/Rounded - 75.7mm L x 75.7mm H
Bearing Type: Ball
RPM: 4000 RPM
Air Flow: 13.6 CFM (0.381m³/min)
Width: 30.00mm
Operating Temperature: 14 ~ 158°F (-10 ~ 70°C)
Termination: 3 Wire Leads
Approval Agency: CE, cURus, TUV
Fan Type: Blower
Noise: 48.1dB(A)
Static Pressure: 0.640 in H2O (159.4 Pa)
Power (Watts): 4.44 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.16 EUR |
10+ | 17.34 EUR |
25+ | 16.3 EUR |
50+ | 15.68 EUR |
200+ | 14.45 EUR |
CBM-7530BF-140-454-20 |
Hersteller: CUI Devices
Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM, TS
Blowers & Centrifugal Fans dc blower, 75.7 x 75.7 x 30 mm, 12 Vdc, ball, 4000 RPM, 13.61 CFM, TS
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.02 EUR |
10+ | 17.2 EUR |
25+ | 16.19 EUR |
50+ | 15.56 EUR |
100+ | 14.34 EUR |
250+ | 13.43 EUR |
500+ | 13.22 EUR |
ERJ-6ENF1404V |
Hersteller: Panasonic Electronic Components
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.4 mOhms
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.4 mOhms
auf Bestellung 60639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
100+ | 0.18 EUR |
200+ | 0.088 EUR |
311+ | 0.057 EUR |
367+ | 0.048 EUR |
520+ | 0.034 EUR |
1000+ | 0.03 EUR |
ERJ-6ENF1404V |
Hersteller: Panasonic
Thick Film Resistors - SMD 0805 1.4Mohms 1% Tol AEC-Q200
Thick Film Resistors - SMD 0805 1.4Mohms 1% Tol AEC-Q200
auf Bestellung 48214 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.16 EUR |
49+ | 0.058 EUR |
100+ | 0.035 EUR |
1000+ | 0.023 EUR |
5000+ | 0.016 EUR |
10000+ | 0.014 EUR |
ERJ-6ENF1404V |
Hersteller: Panasonic Electronic Components
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.4 mOhms
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.4 mOhms
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.022 EUR |
10000+ | 0.02 EUR |
25000+ | 0.017 EUR |
50000+ | 0.016 EUR |
ERJ6ENF1404V |
Hersteller: PANASONIC
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C
Power: 0.125W
Resistance: 1.4MΩ
Conform to the norm: AEC Q200
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C
Power: 0.125W
Resistance: 1.4MΩ
Conform to the norm: AEC Q200
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)ERJ6ENF1404V |
Hersteller: PANASONIC
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C
Power: 0.125W
Resistance: 1.4MΩ
Conform to the norm: AEC Q200
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
Anzahl je Verpackung: 5000 Stücke
Category: SMD resistors
Description: Resistor: thick film; 0805; 1.4MΩ; 0.125W; ±1%; 100ppm/°C
Power: 0.125W
Resistance: 1.4MΩ
Conform to the norm: AEC Q200
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Type of resistor: thick film
Case - mm: 2012
Case - inch: 0805
Anzahl je Verpackung: 5000 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50000+ | 0.013 EUR |
IRF1404LPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Mounting: THT
Case: TO262
Power dissipation: 200W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 162A
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Mounting: THT
Case: TO262
Power dissipation: 200W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 162A
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 40V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.4 EUR |
IRF1404LPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Mounting: THT
Case: TO262
Power dissipation: 200W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 162A
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Mounting: THT
Case: TO262
Power dissipation: 200W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 162A
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.4 EUR |
25+ | 2.86 EUR |
IRF1404LPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 40V 162A 4mOhm 160nC
MOSFET MOSFT 40V 162A 4mOhm 160nC
auf Bestellung 3363 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.49 EUR |
10+ | 3.63 EUR |
100+ | 2.99 EUR |
500+ | 2.59 EUR |
1000+ | 2.18 EUR |
2000+ | 2.06 EUR |
5000+ | 2.01 EUR |
IRF1404LPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET N-CH 40V 162A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 7652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.63 EUR |
50+ | 3.72 EUR |
100+ | 3.06 EUR |
500+ | 2.59 EUR |
1000+ | 2.2 EUR |
2000+ | 2.09 EUR |
5000+ | 2.01 EUR |
IRF1404PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 200W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Drain current: 162A
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 200W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Drain current: 162A
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
39+ | 1.87 EUR |
44+ | 1.66 EUR |
50+ | 1.44 EUR |
53+ | 1.37 EUR |
IRF1404PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 200W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Drain current: 162A
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 200W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Drain current: 162A
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
39+ | 1.87 EUR |
44+ | 1.66 EUR |
50+ | 1.44 EUR |
53+ | 1.37 EUR |
IRF1404PBF |
Hersteller: Infineon Technologies
MOSFET 40V 202A 4mOhm 160nC
MOSFET 40V 202A 4mOhm 160nC
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.34 EUR |
10+ | 2.29 EUR |
100+ | 1.95 EUR |
500+ | 1.7 EUR |
1000+ | 1.53 EUR |
IRF1404PBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 202A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Description: MOSFET N-CH 40V 202A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
auf Bestellung 2237 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.52 EUR |
50+ | 2.84 EUR |
100+ | 2.33 EUR |
500+ | 1.97 EUR |
1000+ | 1.67 EUR |
2000+ | 1.59 EUR |
IRF1404STR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s
Anzahl je Verpackung: 6 Stücke
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s
Anzahl je Verpackung: 6 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 5.05 EUR |
IRF1404STRL |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 162A; 200W; -55°C ~ 175°C; Equivalent: IRF1404S; IRF1404STRL; IRF1404STRR; IRF1404S TIRF1404s
Anzahl je Verpackung: 5 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.05 EUR |
IRF1404STRLPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.17 EUR |
10+ | 3.46 EUR |
100+ | 2.76 EUR |
IRF1404STRLPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.75 EUR |
IRF1404STRLPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 40V 162A 4mOhm 160nC
MOSFET MOSFT 40V 162A 4mOhm 160nC
auf Bestellung 6756 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.29 EUR |
10+ | 2.83 EUR |
100+ | 2.53 EUR |
500+ | 2.15 EUR |
800+ | 1.81 EUR |
IRF1404ZPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.7mΩ
Drain current: 190A
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.7mΩ
Drain current: 190A
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.76 EUR |
46+ | 1.59 EUR |
51+ | 1.42 EUR |
59+ | 1.22 EUR |
63+ | 1.14 EUR |
IRF1404ZPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.7mΩ
Drain current: 190A
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 220W
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.7mΩ
Drain current: 190A
Gate charge: 0.1µC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.76 EUR |
46+ | 1.59 EUR |
51+ | 1.42 EUR |
59+ | 1.22 EUR |
63+ | 1.14 EUR |
IRF1404ZPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
auf Bestellung 9670 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.13 EUR |
10+ | 1.57 EUR |
100+ | 1.33 EUR |
250+ | 1.32 EUR |
500+ | 1.28 EUR |
IRF1404ZPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.96 EUR |
10+ | 2.45 EUR |
100+ | 1.95 EUR |
500+ | 1.65 EUR |
1000+ | 1.4 EUR |
2000+ | 1.33 EUR |
IRF1404ZS |
Hersteller: International Rectifier
Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK IRF1404ZS Infineon TIRF1404zs
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK IRF1404ZS Infineon TIRF1404zs
Anzahl je Verpackung: 10 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 6.81 EUR |
IRF1404ZSTRLPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 4436 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
10+ | 2.9 EUR |
100+ | 2.31 EUR |
IRF1404ZSTRLPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.95 EUR |
1600+ | 1.66 EUR |
2400+ | 1.57 EUR |
IRF1404ZSTRLPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.47 EUR |
10+ | 2.89 EUR |
100+ | 2.29 EUR |
800+ | 1.62 EUR |
2400+ | 1.53 EUR |
4800+ | 1.51 EUR |
KTR10EZPF1404 |
Hersteller: Rohm Semiconductor
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.4 mOhms
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.4 mOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.056 EUR |
KTR10EZPF1404 |
Hersteller: Rohm Semiconductor
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.4 mOhms
Description: RES SMD 1.4M OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1.4 mOhms
auf Bestellung 9414 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
88+ | 0.2 EUR |
131+ | 0.14 EUR |
153+ | 0.12 EUR |
500+ | 0.083 EUR |
1000+ | 0.073 EUR |
KTR10EZPF1404 |
Hersteller: ROHM Semiconductor
Thick Film Resistors - SMD 0805 1.4Mohm 1% High Voltage
Thick Film Resistors - SMD 0805 1.4Mohm 1% High Voltage
auf Bestellung 4890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.38 EUR |
22+ | 0.13 EUR |
100+ | 0.074 EUR |
1000+ | 0.058 EUR |
5000+ | 0.046 EUR |
10000+ | 0.037 EUR |
RF1404-000 |
Hersteller: LITTELFUSE
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch
Type of fuse: PTC polymer
Current rating: 0.75A
Switched current: 1.5A
Max. voltage: 13.2V
Fuse size: 1812
Power: 1W
Min. resistance: 110mΩ
Max resistance: 450mΩ
A dimension: 4.73mm
B dimension: 3.41mm
C dimension: 0.62mm
D dimension: 0.95mm
E dimension: 0.2mm
Operating temperature: -40...85°C
Trade name: Polyswitch
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch
Type of fuse: PTC polymer
Current rating: 0.75A
Switched current: 1.5A
Max. voltage: 13.2V
Fuse size: 1812
Power: 1W
Min. resistance: 110mΩ
Max resistance: 450mΩ
A dimension: 4.73mm
B dimension: 3.41mm
C dimension: 0.62mm
D dimension: 0.95mm
E dimension: 0.2mm
Operating temperature: -40...85°C
Trade name: Polyswitch
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
103+ | 0.7 EUR |
133+ | 0.54 EUR |
206+ | 0.35 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
RF1404-000 |
Hersteller: LITTELFUSE
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch
Type of fuse: PTC polymer
Current rating: 0.75A
Switched current: 1.5A
Max. voltage: 13.2V
Fuse size: 1812
Power: 1W
Min. resistance: 110mΩ
Max resistance: 450mΩ
A dimension: 4.73mm
B dimension: 3.41mm
C dimension: 0.62mm
D dimension: 0.95mm
E dimension: 0.2mm
Operating temperature: -40...85°C
Trade name: Polyswitch
Anzahl je Verpackung: 1 Stücke
Category: SMD Polymer Fuses
Description: Fuse: PTC polymer; 750mA; 1812; Polyswitch
Type of fuse: PTC polymer
Current rating: 0.75A
Switched current: 1.5A
Max. voltage: 13.2V
Fuse size: 1812
Power: 1W
Min. resistance: 110mΩ
Max resistance: 450mΩ
A dimension: 4.73mm
B dimension: 3.41mm
C dimension: 0.62mm
D dimension: 0.95mm
E dimension: 0.2mm
Operating temperature: -40...85°C
Trade name: Polyswitch
Anzahl je Verpackung: 1 Stücke
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
103+ | 0.7 EUR |
133+ | 0.54 EUR |
206+ | 0.35 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
RF1404C |
Hersteller: RFMi
Signal Conditioning 227 Ohms 12 V 433.8 to 434.12 MHz 2.4 dB SM5050-8 SMD/SMT 700 kHz
Signal Conditioning 227 Ohms 12 V 433.8 to 434.12 MHz 2.4 dB SM5050-8 SMD/SMT 700 kHz
auf Bestellung 7862 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.66 EUR |
10+ | 2.39 EUR |
25+ | 2.13 EUR |
100+ | 1.92 EUR |
250+ | 1.72 EUR |
500+ | 1.49 EUR |
1000+ | 1.23 EUR |
RF1404D |
Hersteller: RFMi
Signal Conditioning 2853 Ohms, 2411 Ohms 12 V 433.8 to 434.12 MHz 1.6 dB SM3838-8 SMD/SMT 600 kHz
Signal Conditioning 2853 Ohms, 2411 Ohms 12 V 433.8 to 434.12 MHz 1.6 dB SM3838-8 SMD/SMT 600 kHz
auf Bestellung 4562 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.75 EUR |
10+ | 2.45 EUR |
25+ | 2.22 EUR |
100+ | 1.94 EUR |
250+ | 1.72 EUR |
500+ | 1.46 EUR |
1000+ | 1.18 EUR |
IRF1404 |
Hersteller: JSMicro Semiconductor
Tranzystor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; Equivalent: IRF1404; IRF1404 JSMICRO TIRF1404 JSM
Tranzystor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; Equivalent: IRF1404; IRF1404 JSMICRO TIRF1404 JSM
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)IRF1404PBF |
Hersteller: International Rectifier Corporation
TO-220
TO-220
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)IRF1404Z |
Hersteller: International Rectifier
N-MOSFET HEXFET 40V 75A 200W 0,0037Ω IRF1404Z TIRF1404z
N-MOSFET HEXFET 40V 75A 200W 0,0037Ω IRF1404Z TIRF1404z
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)IRF1404ZPBF |
Hersteller: International Rectifier Corporation
TO-220AB
TO-220AB
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)IRF1404ZPBF; 190A; 40V; 220W; 0.0037R; N-канальный; HEXFET; Корпус: TO-220; INFINEON (IRF) |
auf Bestellung 1 Stücke:
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