Suchergebnisse für "ho 2k" : 76
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FF200R12KE3HOSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW |
Produkt ist nicht verfügbar |
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FF200R12KE4PHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |
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FF200R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW |
Produkt ist nicht verfügbar |
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FF200R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.1kW |
Produkt ist nicht verfügbar |
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FF300R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.45kW |
Produkt ist nicht verfügbar |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW |
Produkt ist nicht verfügbar |
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| FF450R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW |
Produkt ist nicht verfügbar |
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| FF450R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW |
Produkt ist nicht verfügbar |
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| FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Power dissipation: 2.5kW |
Produkt ist nicht verfügbar |
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FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Power dissipation: 2.8kW |
Produkt ist nicht verfügbar |
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| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MMES Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 4.3kW |
Produkt ist nicht verfügbar |
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HS300 2K J | Ohmite |
Wirewound Resistors - Chassis Mount PWR RES 300W 2K 5% |
Produkt ist nicht verfügbar |
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J40S 2K | Nidec Components |
Precision Potentiometers 350 degree electrical angle, 1 W, 2 kOhm resistance, sensing single turn wirewound, .15% linearity, 40mm diameter, wirewrap leads |
Produkt ist nicht verfügbar |
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J45S 2K | Nidec Components |
Precision Potentiometers 353 degree electrical angle, 1.3 W, 2 kOhm resistance, sensing single turn wirewound, .1% linearity, 44.45mm diameter, wirewrap leads |
Produkt ist nicht verfügbar |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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Y50532K00000J0L | Vishay Precision Group Foil Resistors |
Trimmer Resistors - Through Hole 2Kohms 5% |
Produkt ist nicht verfügbar |
| FF200R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
| FF200R12KE4PHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
| FF200R12KT3EHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
| FF200R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Produkt ist nicht verfügbar
| FF300R12KT3EHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Produkt ist nicht verfügbar
| FF300R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
| FF450R12KE4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
| FF450R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
| FZ400R12KS4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
| FZ600R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
| FZ900R12KE4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
| HS300 2K J |
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Hersteller: Ohmite
Wirewound Resistors - Chassis Mount PWR RES 300W 2K 5%
Wirewound Resistors - Chassis Mount PWR RES 300W 2K 5%
Produkt ist nicht verfügbar
| J40S 2K |
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Hersteller: Nidec Components
Precision Potentiometers 350 degree electrical angle, 1 W, 2 kOhm resistance, sensing single turn wirewound, .15% linearity, 40mm diameter, wirewrap leads
Precision Potentiometers 350 degree electrical angle, 1 W, 2 kOhm resistance, sensing single turn wirewound, .15% linearity, 40mm diameter, wirewrap leads
Produkt ist nicht verfügbar
| J45S 2K |
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Hersteller: Nidec Components
Precision Potentiometers 353 degree electrical angle, 1.3 W, 2 kOhm resistance, sensing single turn wirewound, .1% linearity, 44.45mm diameter, wirewrap leads
Precision Potentiometers 353 degree electrical angle, 1.3 W, 2 kOhm resistance, sensing single turn wirewound, .1% linearity, 44.45mm diameter, wirewrap leads
Produkt ist nicht verfügbar
| TT260N22KOFHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| Y50532K00000J0L |
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Hersteller: Vishay Precision Group Foil Resistors
Trimmer Resistors - Through Hole 2Kohms 5%
Trimmer Resistors - Through Hole 2Kohms 5%
Produkt ist nicht verfügbar
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