Suchergebnisse für "n2907" : > 120
Art der Ansicht :
Mindestbestellmenge: 7212
Mindestbestellmenge: 2000
Mindestbestellmenge: 57
Mindestbestellmenge: 28
Mindestbestellmenge: 2000
Mindestbestellmenge: 72
Mindestbestellmenge: 31
Mindestbestellmenge: 6411
Mindestbestellmenge: 11539
Mindestbestellmenge: 3000
Mindestbestellmenge: 42
Mindestbestellmenge: 80
Mindestbestellmenge: 26
Mindestbestellmenge: 3000
Mindestbestellmenge: 50
Mindestbestellmenge: 42
Mindestbestellmenge: 4000
Mindestbestellmenge: 4000
Mindestbestellmenge: 31
Mindestbestellmenge: 57
Mindestbestellmenge: 1025
Mindestbestellmenge: 670
Mindestbestellmenge: 670
Mindestbestellmenge: 400
Mindestbestellmenge: 400
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PN2907ATF | Fairchild Semiconductor |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 45385 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907ATF | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907ATF | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 27171 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
PN2907ATFR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 62192 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907ATFR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 62000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907ATFR | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 35829 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
PN2907BU | onsemi |
Description: TRANS PNP 40V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 8823 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907BU | Fairchild Semiconductor |
Description: TRANS PNP 40V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 33620 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PN2907TA | Fairchild Semiconductor |
Description: TRANS PNP 40V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 109682 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907,LF(CT | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907,LF(CT | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 4819 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907,LF(CT | Toshiba | Digital Transistors PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A |
auf Bestellung 2379 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
RN2907,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 10kOhm, 47kOhm, 10kOhm, 47kOhm, -50V (SOT-363) |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
RN2907FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7390 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
RN2907FE,LXHF(CT | Toshiba | Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563) |
auf Bestellung 8000 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
TN2907A | Fairchild Semiconductor |
Description: TRANS PNP 60V 0.8A TO226-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-226-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 10071 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
TPN2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 35...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 8320 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
TPN2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 35...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8320 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
TPN2907A | CDIL |
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p Anzahl je Verpackung: 100 Stücke |
auf Bestellung 2265 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
TPN2907A | CDIL |
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p Anzahl je Verpackung: 100 Stücke |
auf Bestellung 1200 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
2N2222/2N2907 | FSC | 08+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
2N22222N2907 |
auf Bestellung 98000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
2N2907A | MICROSEMI |
TO18/PNP TRANSISTOR 2N2907 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-21 Tag (e) |
||||||||||||||||
2N2907A; биполярный; PNP; 60V; 0.6A; 0.625W; корпус: TO-92; 250Mhz; CDIL |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
2SB1197T146RSOT23-GASTN2907SF | ROHM |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JAN2N2907 | MOTOROLA |
auf Bestellung 236500 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JAN2N2907 | NS | CAN |
auf Bestellung 198 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
JANTX2N2907 | MOTOROLA |
auf Bestellung 264000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JANTX2N2907 | NS | CAN |
auf Bestellung 627 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
JANTX2N2907A | MICROSEMI |
TO-18PNP Transistor 2N2907A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-21 Tag (e) |
||||||||||||||||
JANTX2N2907AUB | MICROSEMI |
UB/PNP SMALL SIGNAL SILICON TRANSISTOR 2N2907 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-21 Tag (e) |
||||||||||||||||
JTX2N2907 | MOTOROLA |
auf Bestellung 265700 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JTX2N2907A | MOTOROLA |
auf Bestellung 259890 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JX2N2907 | MOTOROLA |
auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
JX2N2907A | MOTOROLA |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
KN2907A |
auf Bestellung 8385 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
KN2907A-AT/P | KEC | TO92 |
auf Bestellung 3254 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KN2907A-SRTK | NEC |
auf Bestellung 2591 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
KN2907AS | KEC | SOT23 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KN2907AS-RTK | KEC | 09+ |
auf Bestellung 281018 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KN2907S | KEC | 09+ |
auf Bestellung 18018 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS | KEC | 07+ SOT-23 |
auf Bestellung 8420 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS-RTK | KEC | SOT-23 |
auf Bestellung 6888 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS-RTK | KEC | SOT-23 03+ |
auf Bestellung 8500 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS-RTK/P | KEC | SOT23 |
auf Bestellung 639000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS-RTK/P | KEC | SOT-23 09+ |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907AS-RTK/PS | KEC | SOT-23 |
auf Bestellung 11232 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907S | KEC | 07+ SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
KTN2907S-RTK | KEC |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
P2N2907AG |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
P2N2907ARL1 |
auf Bestellung 234000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
P2N2907ARL1G | ON | 07+ QFP |
auf Bestellung 128 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
P2N2907AZL1 |
auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
P2N2907AZL1G |
auf Bestellung 38000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
PN2907 |
auf Bestellung 6500 Stücke: Lieferzeit 21-28 Tag (e) |
PN2907ATF |
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 45385 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7212+ | 0.066 EUR |
PN2907ATF |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.11 EUR |
6000+ | 0.098 EUR |
10000+ | 0.081 EUR |
PN2907ATF |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 27171 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
82+ | 0.63 EUR |
200+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.12 EUR |
24000+ | 0.1 EUR |
PN2907ATFR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 62192 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
PN2907ATFR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.11 EUR |
6000+ | 0.098 EUR |
10000+ | 0.081 EUR |
50000+ | 0.072 EUR |
PN2907ATFR |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 35829 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.73 EUR |
107+ | 0.49 EUR |
236+ | 0.22 EUR |
1000+ | 0.16 EUR |
2000+ | 0.12 EUR |
10000+ | 0.11 EUR |
24000+ | 0.1 EUR |
PN2907BU |
Hersteller: onsemi
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 8823 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
44+ | 0.4 EUR |
100+ | 0.21 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
PN2907BU |
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 33620 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6411+ | 0.082 EUR |
PN2907TA |
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 109682 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
RN2907,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.071 EUR |
RN2907,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.42 EUR |
61+ | 0.29 EUR |
124+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.082 EUR |
RN2907,LF(CT |
Hersteller: Toshiba
Digital Transistors PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
Digital Transistors PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 2379 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
80+ | 0.65 EUR |
119+ | 0.44 EUR |
286+ | 0.18 EUR |
1000+ | 0.12 EUR |
3000+ | 0.099 EUR |
9000+ | 0.083 EUR |
24000+ | 0.078 EUR |
RN2907,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
37+ | 0.49 EUR |
100+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
RN2907,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
RN2907,LXHF(CT |
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 10kOhm, 47kOhm, 10kOhm, 47kOhm, -50V (SOT-363)
Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 10kOhm, 47kOhm, 10kOhm, 47kOhm, -50V (SOT-363)
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.04 EUR |
71+ | 0.74 EUR |
171+ | 0.3 EUR |
1000+ | 0.22 EUR |
3000+ | 0.18 EUR |
9000+ | 0.16 EUR |
24000+ | 0.15 EUR |
RN2907FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.42 EUR |
61+ | 0.29 EUR |
124+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.082 EUR |
2000+ | 0.071 EUR |
RN2907FE,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.071 EUR |
RN2907FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.13 EUR |
RN2907FE,LXHF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7390 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
43+ | 0.42 EUR |
100+ | 0.21 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
RN2907FE,LXHF(CT |
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563)
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) PNP x 2 Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-563)
auf Bestellung 8000 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
78+ | 0.67 EUR |
177+ | 0.29 EUR |
1000+ | 0.2 EUR |
8000+ | 0.17 EUR |
24000+ | 0.16 EUR |
TN2907A |
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 60V 0.8A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 10071 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1025+ | 0.48 EUR |
TPN2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 35...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 35...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 8320 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
670+ | 0.11 EUR |
1540+ | 0.047 EUR |
1710+ | 0.042 EUR |
2230+ | 0.032 EUR |
2360+ | 0.03 EUR |
TPN2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 35...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 10 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 35...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
670+ | 0.11 EUR |
1540+ | 0.047 EUR |
1710+ | 0.042 EUR |
2230+ | 0.032 EUR |
2360+ | 0.03 EUR |
TPN2907A |
Hersteller: CDIL
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p
Anzahl je Verpackung: 100 Stücke
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p
Anzahl je Verpackung: 100 Stücke
auf Bestellung 2265 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
400+ | 0.084 EUR |
TPN2907A |
Hersteller: CDIL
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p
Anzahl je Verpackung: 100 Stücke
PNP 600mA 60V 400mW 200MHz PN2907A, P2N2222, P2N2222A PN2907A-CDI 2N2907A T2N2907a p
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
400+ | 0.084 EUR |
2N2907A; биполярный; PNP; 60V; 0.6A; 0.625W; корпус: TO-92; 250Mhz; CDIL |
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)