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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2N2907 Produktcode: 161911 |
CDIL |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-18 fT: 200 MHz U, V: 40 V U, V: 60 V I, А: 0,6 A h21,max: 300 |
auf Bestellung 35 Stück: Lieferzeit 21-28 Tag (e) |
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2N2907A-CDI Produktcode: 171514 |
Transistoren > Bipolar-Transistoren PNP |
auf Bestellung 978 Stück: Lieferzeit 21-28 Tag (e) |
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2N2907A[KSP2907A] (Bipolartransistor NPN) Produktcode: 30196 |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-39 fT: 200 MHz Uceo,V: 60 Ucbo,V: 60 Ic,A: 0,6 h21: 150 ZCODE: THT |
erwartet:
10 Stück
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2N2907 | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 1712 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907 | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907-CDI 2N2907 T2N2907 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907 | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907-CDI 2N2907 T2N2907 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907 | Motorola |
Description: TRANS PNP 40V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.8 W |
auf Bestellung 29360 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 466 Stücke: Lieferzeit 164-168 Tag (e) |
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2N2907 PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Silicon |
auf Bestellung 2309 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 50...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 9783 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A | DIOTEC SEMICONDUCTOR |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 300 Mounting: THT Kind of package: Ammo Pack |
auf Bestellung 4950 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A | DIOTEC |
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC Anzahl je Verpackung: 100 Stücke |
auf Bestellung 299 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 50...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9783 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907A | DIOTEC SEMICONDUCTOR |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 300 Mounting: THT Kind of package: Ammo Pack Anzahl je Verpackung: 25 Stücke |
auf Bestellung 4950 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907A | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907A T2N2907a Anzahl je Verpackung: 50 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907A | Diotec Semiconductor | Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP |
auf Bestellung 10290 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | Lumimax Optoelectronic Technology |
Description: TRANS PNP EBC -0.6A 60V TO-92 Packaging: Bulk |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | Good-Ark Semiconductor |
Description: TRANSISTOR, PNP, -60V, -0.60A, T Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | Diotec Semiconductor |
Description: BJT TO92 60V 600MA PNP 0.625W Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 3985 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | Rectron | Bipolar Transistors - BJT TO-18 |
auf Bestellung 11665 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A | Diotec Semiconductor | Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo |
auf Bestellung 2824 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A | Diotec Semiconductor | Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 5635 Stücke: Lieferzeit 164-168 Tag (e) |
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2N2907A PBFREE | Central Semiconductor |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4W Case: TO18 Current gain: 30...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A PBFREE | Central Semiconductor |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4W Case: TO18 Current gain: 30...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907A PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Gen Pur SS |
auf Bestellung 5461 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907A PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
auf Bestellung 2962 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AE3 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 220 Stücke: Lieferzeit 164-168 Tag (e) |
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2N2907AE4 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUA | Optek / TT Electronics | Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB | TT Electronics/Optek Technology |
Description: TRANS PNP 60V 0.6A SMD Packaging: Bulk Package / Case: 3-LCC Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: Ceramic SMD Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 1529 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB | Optek / TT Electronics | Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB1 | STMicroelectronics |
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2907AUB1 | STMicroelectronics | Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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CP591X-2N2907A-CT20 | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A DIE 1=20PCS Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: Die Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN2N2907A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 7783 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) |
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JANS2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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JANSR2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT RH Small-Signal BJT |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1379 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX2N2907AUB | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTX2N2907AUB/TR | Microchip Technology | Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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JANTXV2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTXV2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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P2N2907AZL1 | onsemi |
Description: TRANS PNP 60V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907A PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A TO-92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 2962 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907A PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Gen Pur SW |
auf Bestellung 13070 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ABU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 139265 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ABU | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 10944 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATA | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 1538 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATA | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATA | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 11168 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATAR | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 10545 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATAR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATAR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 3988 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATF | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
|
2N2907 Produktcode: 161911 |
Hersteller: CDIL
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 40 V
U, V: 60 V
I, А: 0,6 A
h21,max: 300
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 40 V
U, V: 60 V
I, А: 0,6 A
h21,max: 300
auf Bestellung 35 Stück:
Lieferzeit 21-28 Tag (e)2N2907A[KSP2907A] (Bipolartransistor NPN) Produktcode: 30196 |
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-39
fT: 200 MHz
Uceo,V: 60
Ucbo,V: 60
Ic,A: 0,6
h21: 150
ZCODE: THT
Gehäuse: TO-39
fT: 200 MHz
Uceo,V: 60
Ucbo,V: 60
Ic,A: 0,6
h21: 150
ZCODE: THT
erwartet:
10 Stück
2N2907 |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 1712 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.03 EUR |
106+ | 0.68 EUR |
176+ | 0.41 EUR |
235+ | 0.3 EUR |
249+ | 0.29 EUR |
2N2907 |
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.94 EUR |
2N2907 |
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.94 EUR |
2N2907 |
Hersteller: Motorola
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
auf Bestellung 29360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
81+ | 6.13 EUR |
2N2907 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 466 Stücke:
Lieferzeit 164-168 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.97 EUR |
100+ | 5.51 EUR |
2N2907 PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Silicon
Bipolar Transistors - BJT PNP Silicon
auf Bestellung 2309 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.85 EUR |
10+ | 3.19 EUR |
100+ | 2.53 EUR |
250+ | 2.34 EUR |
500+ | 2.13 EUR |
1000+ | 1.81 EUR |
2000+ | 1.78 EUR |
2N2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 9783 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
101+ | 0.71 EUR |
168+ | 0.43 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
2N2907A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 4950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1350+ | 0.054 EUR |
2125+ | 0.034 EUR |
2675+ | 0.027 EUR |
3500+ | 0.02 EUR |
3725+ | 0.019 EUR |
2N2907A |
Hersteller: DIOTEC
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC
Anzahl je Verpackung: 100 Stücke
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC
Anzahl je Verpackung: 100 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 0.099 EUR |
2N2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9783 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
101+ | 0.71 EUR |
168+ | 0.43 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
2N2907A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Anzahl je Verpackung: 25 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4950 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1350+ | 0.054 EUR |
2125+ | 0.034 EUR |
2675+ | 0.027 EUR |
3500+ | 0.02 EUR |
3725+ | 0.019 EUR |
2N2907A |
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.92 EUR |
2N2907A |
Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP
Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP
auf Bestellung 10290 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 0.21 EUR |
19+ | 0.15 EUR |
100+ | 0.13 EUR |
500+ | 0.1 EUR |
1000+ | 0.09 EUR |
4000+ | 0.067 EUR |
8000+ | 0.044 EUR |
2N2907A |
Hersteller: Lumimax Optoelectronic Technology
Description: TRANS PNP EBC -0.6A 60V TO-92
Packaging: Bulk
Description: TRANS PNP EBC -0.6A 60V TO-92
Packaging: Bulk
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
50+ | 0.4 EUR |
100+ | 0.33 EUR |
200+ | 0.28 EUR |
500+ | 0.25 EUR |
1000+ | 0.21 EUR |
2000+ | 0.14 EUR |
2N2907A |
Hersteller: Good-Ark Semiconductor
Description: TRANSISTOR, PNP, -60V, -0.60A, T
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANSISTOR, PNP, -60V, -0.60A, T
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.2 EUR |
10+ | 2.65 EUR |
100+ | 2.11 EUR |
500+ | 1.79 EUR |
1000+ | 1.51 EUR |
2N2907A |
Hersteller: Diotec Semiconductor
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 0.26 EUR |
73+ | 0.24 EUR |
77+ | 0.23 EUR |
135+ | 0.13 EUR |
250+ | 0.097 EUR |
500+ | 0.081 EUR |
1000+ | 0.055 EUR |
2N2907A |
Hersteller: Rectron
Bipolar Transistors - BJT TO-18
Bipolar Transistors - BJT TO-18
auf Bestellung 11665 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.58 EUR |
10+ | 1.3 EUR |
100+ | 1.01 EUR |
500+ | 0.86 EUR |
1000+ | 0.7 EUR |
2500+ | 0.68 EUR |
2N2907A |
Hersteller: Diotec Semiconductor
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 2824 Stücke:
Lieferzeit 14-21 Tag (e)2N2907A |
Hersteller: Diotec Semiconductor
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 4300 Stücke:
Lieferzeit 14-21 Tag (e)2N2907A |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 5635 Stücke:
Lieferzeit 164-168 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.97 EUR |
100+ | 5.51 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
23+ | 3.1 EUR |
25+ | 2.86 EUR |
100+ | 1.83 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Gen Pur SS
Bipolar Transistors - BJT PNP Gen Pur SS
auf Bestellung 5461 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.7 EUR |
10+ | 3.12 EUR |
100+ | 2.5 EUR |
500+ | 2.16 EUR |
1000+ | 1.83 EUR |
2000+ | 1.7 EUR |
4000+ | 1.69 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
auf Bestellung 2962 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.89 EUR |
10+ | 3.23 EUR |
100+ | 2.57 EUR |
500+ | 2.17 EUR |
1000+ | 1.85 EUR |
2000+ | 1.75 EUR |
2N2907AE3 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 220 Stücke:
Lieferzeit 164-168 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.67 EUR |
100+ | 6.23 EUR |
2N2907AE4 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.64 EUR |
100+ | 6.16 EUR |
2N2907AUA |
Hersteller: Optek / TT Electronics
Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin
Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 46.18 EUR |
120+ | 46.15 EUR |
270+ | 45.23 EUR |
2N2907AUB |
Hersteller: TT Electronics/Optek Technology
Description: TRANS PNP 60V 0.6A SMD
Packaging: Bulk
Package / Case: 3-LCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SMD
Packaging: Bulk
Package / Case: 3-LCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 41.11 EUR |
100+ | 37.96 EUR |
250+ | 36.47 EUR |
2N2907AUB |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.19 EUR |
100+ | 9.47 EUR |
2N2907AUB |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 1529 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.26 EUR |
100+ | 9.54 EUR |
2N2907AUB |
Hersteller: Optek / TT Electronics
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.07 EUR |
270+ | 41.4 EUR |
1020+ | 40.57 EUR |
2N2907AUB1 |
Hersteller: STMicroelectronics
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 185.79 EUR |
10+ | 176.99 EUR |
25+ | 173.23 EUR |
80+ | 164.44 EUR |
2N2907AUB1 |
Hersteller: STMicroelectronics
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 193.86 EUR |
10+ | 183.15 EUR |
25+ | 176.55 EUR |
50+ | 171.67 EUR |
100+ | 168.78 EUR |
250+ | 167.25 EUR |
500+ | 167.18 EUR |
CP591X-2N2907A-CT20 |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A DIE 1=20PCS
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS PNP 60V 0.6A DIE 1=20PCS
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 236.33 EUR |
JAN2N2907A |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.49 EUR |
100+ | 4.17 EUR |
JAN2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 7783 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.45 EUR |
10+ | 4.44 EUR |
25+ | 4.4 EUR |
100+ | 4.14 EUR |
250+ | 4.12 EUR |
JAN2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.7 EUR |
100+ | 9.24 EUR |
500+ | 9.05 EUR |
JANS2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 112.08 EUR |
100+ | 104.09 EUR |
JANSR2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT RH Small-Signal BJT
Bipolar Transistors - BJT RH Small-Signal BJT
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 97.56 EUR |
JANTX2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.8 EUR |
10+ | 4.79 EUR |
100+ | 4.49 EUR |
JANTX2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.14 EUR |
10+ | 10.12 EUR |
100+ | 9.43 EUR |
JANTX2N2907AUB |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.23 EUR |
100+ | 9.49 EUR |
JANTX2N2907AUB/TR |
Hersteller: Microchip Technology
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)JANTXV2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.34 EUR |
10+ | 7.29 EUR |
25+ | 7.23 EUR |
100+ | 6.99 EUR |
500+ | 6.85 EUR |
JANTXV2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.43 EUR |
100+ | 11.81 EUR |
500+ | 11.58 EUR |
P2N2907AZL1 |
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
PN2907A PBFREE |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 2962 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
2500+ | 0.15 EUR |
PN2907A PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Gen Pur SW
Bipolar Transistors - BJT PNP Gen Pur SW
auf Bestellung 13070 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.65 EUR |
10+ | 0.47 EUR |
100+ | 0.23 EUR |
1000+ | 0.22 EUR |
2500+ | 0.14 EUR |
10000+ | 0.13 EUR |
25000+ | 0.12 EUR |
PN2907ABU |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 139265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.56 EUR |
10+ | 0.39 EUR |
100+ | 0.16 EUR |
1000+ | 0.1 EUR |
2500+ | 0.099 EUR |
10000+ | 0.083 EUR |
50000+ | 0.081 EUR |
PN2907ABU |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 10944 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
45+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.098 EUR |
10000+ | 0.084 EUR |
PN2907ATA |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
PN2907ATA |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.11 EUR |
6000+ | 0.098 EUR |
10000+ | 0.081 EUR |
PN2907ATA |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 11168 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.43 EUR |
100+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.084 EUR |
10000+ | 0.081 EUR |
24000+ | 0.074 EUR |
PN2907ATAR |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 10545 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.43 EUR |
100+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.069 EUR |
PN2907ATAR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.074 EUR |
6000+ | 0.069 EUR |
10000+ | 0.059 EUR |
PN2907ATAR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
PN2907ATF |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.11 EUR |
6000+ | 0.098 EUR |
10000+ | 0.081 EUR |
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