Suchergebnisse für "rf740" : 169
Art der Ansicht :
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRF740 | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF7401 | IR - ASA only Supplier | Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7401TR | IR - ASA only Supplier | Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7401TR | Infineon Technologies | Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7401TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF7401TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7401TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7402PBF | Infineon Technologies | Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7404 | Infineon Technologies | Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7404PBF | Infineon Technologies | Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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IRF7404QPBF | Infineon Technologies | Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
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IRF7404QTRPBF | Infineon Technologies | Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF7404TR | Infineon Technologies | Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7404TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF7406 | Infineon Technologies | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF7406GTRPBF | Infineon Technologies | Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7406HR | IR - ASA only Supplier | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF7406PBF | Infineon Technologies | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
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IRF7406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF7406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7406TRPBF | Infineon Technologies | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF7406TRPBF | Infineon Technologies | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF740A | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF740ALPBF | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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IRF740ASTRRPBF | Vishay Semiconductors | MOSFET 400V N-CH HEXFET D2-PA |
Produkt ist nicht verfügbar |
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IRF740B | ON Semiconductor | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 Rail |
Produkt ist nicht verfügbar |
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IRF740BPBF | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF740PBF-BE3 | Vishay | IRF740PBF-BE3 |
Produkt ist nicht verfügbar |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF740STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF740STRRPBF | Vishay | Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF7404TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||
IRF740STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
IRF740 |
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IRF7401 |
Hersteller: IR - ASA only Supplier
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7401TR |
Hersteller: IR - ASA only Supplier
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7401TR |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7401TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7401TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7401TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7402PBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube
Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube
Produkt ist nicht verfügbar
IRF7403TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7403TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7403TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7404 |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7404PBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube
Produkt ist nicht verfügbar
IRF7404QPBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube
Produkt ist nicht verfügbar
IRF7404QTRPBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF7404TR |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7404TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7406 |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF7406GTRPBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7406HR |
Hersteller: IR - ASA only Supplier
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF7406PBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube
Produkt ist nicht verfügbar
IRF7406TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7406TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7406TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF7406TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF740A |
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IRF740ALPBF |
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
IRF740ASTRRPBF |
Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET D2-PA
MOSFET 400V N-CH HEXFET D2-PA
Produkt ist nicht verfügbar
IRF740B |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 Rail
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 Rail
Produkt ist nicht verfügbar
IRF740BPBF |
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IRF740PBF-BE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF740PBF-BE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF740STRLPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF740STRRPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF740STRRPBF |
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IRF7404TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF740STRLPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF740STRRPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar