Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (132304) > Seite 2182 nach 2206
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| L2293QTR | STMicroelectronics |
 Category: Motor and PWM driversDescription: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4 Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: motor controller Case: VFQFPN32 Output current: 0.6A Number of channels: 4 Mounting: SMD Application: DC motors Kind of package: reel; tape Supply voltage: 2.8...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| E-TDA7384A | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 46W Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 4Ω Kind of package: tube Integrated circuit features: stereo |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA40H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 153nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB30H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STGW40H65DFB-4 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
Produkt ist nicht verfügbar |
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STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STGH30H65DFB-2AG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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STGP30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGWA40H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA50H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA100H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube |
Produkt ist nicht verfügbar |
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STP2N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W Case: TO220-3 Mounting: THT Kind of package: tube Pulsed drain current: 8A Power dissipation: 42W Gate charge: 5nC Polarisation: unipolar Technology: MDmesh™ K5 Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W Case: PowerFLAT 5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 6A Power dissipation: 33W Gate charge: 5nC Polarisation: unipolar Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
Produkt ist nicht verfügbar |
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STD2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Version: ESD Technology: SuperMesh™ Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
Produkt ist nicht verfügbar |
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| LD39100PU18RY | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 1.8V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: LD39100 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V Application: automotive industry |
Produkt ist nicht verfügbar |
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TSH24IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 25MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...30V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 15V/μs Integrated circuit features: high speed Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.65µA Input offset current: 65nA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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L9663 | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube Type of integrated circuit: interface Mounting: SMD Case: TQFP32 Kind of package: tube Interface: PSI5; SPI Kind of integrated circuit: transceiver Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TSU102IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV Type of integrated circuit: operational amplifier Bandwidth: 9kHz Number of channels: 2 Mounting: SMT Case: MSOP8 Operating temperature: -40...85°C Input offset voltage: 3.4mV Slew rate: 3mV/μs Integrated circuit features: nanopower; rail-to-rail Input bias current: 30pA Voltage supply range: 1.5...5.5V DC Quiescent current: 950nA Kind of package: reel; tape Input offset current: 30pA |
Produkt ist nicht verfügbar |
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P0111MA 1AA3 | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 25µA Case: TO92 Mounting: THT Max. forward impulse current: 8A Kind of package: bulk |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STM6315SDW13F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1...5.5V DC Case: SOT143-4 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 2.63V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TYN1212RG | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Case: TO220AB Mounting: THT Max. load current: 12A Max. forward impulse current: 120A Kind of package: tube Gate current: 15mA Type of thyristor: thyristor |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TN4050-12PI | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT Gate current: 50mA Max. off-state voltage: 1.2kV Load current: 25A Max. load current: 40A Kind of package: tube Case: TOP3I Type of thyristor: standard Mounting: THT Max. forward impulse current: 0.4kA |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TN5050H-12WY | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube Max. off-state voltage: 1.2kV Load current: 32A Case: TO247 Mounting: THT Max. load current: 50A Max. forward impulse current: 0.4kA Kind of package: tube Features of semiconductor devices: high temperature Application: automotive industry Gate current: 50mA Type of thyristor: thyristor |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TSC2010IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| TSC2010IYST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP8NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 617 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STW30N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ISO8200B | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 8 Mounting: SMD Case: PowerSO36 On-state resistance: 0.11Ω Kind of package: tube Supply voltage: 10.5...36V DC supply current: 9mA Interface: SPI |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISO8200BQ | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 8 Mounting: SMD Case: TFQFPN32 On-state resistance: 0.11Ω Kind of package: tube Supply voltage: 10.5...36V Integrated circuit features: galvanically isolated DC supply current: 9mA Interface: SPI |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISO8200AQ | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube Interface: SPI Supply voltage: 10.5...36V Case: TFQFPN32 Kind of integrated circuit: high-side Number of channels: 8 On-state resistance: 0.12Ω Mounting: SMD Output current: 0.7A Type of integrated circuit: power switch DC supply current: 9mA Integrated circuit features: galvanically isolated Kind of package: tube |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VIPER17HDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VIPER17HN | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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T410-700T | STMicroelectronics |
Category: Triacs Description: Triac; 700V; 4A; Igt: 10mA; TO220AB; tube; Ifsm: 31A Typ of triac: standard Max. off-state voltage: 700V Max. load current: 4A Gate current: 10mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 31A |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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T410-800H | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: tube Case: IPAK Type of thyristor: triac Mounting: THT Max. forward impulse current: 31A |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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T410-800T | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: tube Case: TO220AB Type of thyristor: triac Mounting: THT Max. forward impulse current: 31A |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STWD100NXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STWD100YNXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BUL49D | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 80W Case: TO220AB Current gain: 4...60 Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STN851 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Current gain: 30...350 |
auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) |
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2STN1550 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 667 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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L6920D | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 0.6...5.5V DC Output voltage: 2...5.2V DC Case: TSSOP8 Mounting: SMD Frequency: 1MHz Topology: boost Number of channels: 1 Operating temperature: max. 150°C Output current: 1A |
Produkt ist nicht verfügbar |
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STTH2003CG | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1V Max. load current: 30A Max. forward impulse current: 110A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FERD40M45CT | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 275A Case: TO220AB Max. forward voltage: 0.34V Max. load current: 40A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 0.5µs |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TS472IQT | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: QFN24 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TS472EIJT | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: flip chip12 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TSC2010HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.9V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TSC2010IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
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TSC2012HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 490kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 2.8V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
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Im Einkaufswagen Stück im Wert von UAH |
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TSC2010IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
Produkt ist nicht verfügbar |
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TSC2011HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 750kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 16.5nC |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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STF8NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4.3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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STF80N900K6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 21.5W Case: TO220FP On-state resistance: 0.9Ω Mounting: THT Gate charge: 7nC Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF80N240K6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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STTH15R06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO220FPAC Kind of package: tube Max. forward voltage: 2.9V Max. load current: 30A Leakage current: 60µA Reverse recovery time: 50ns |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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STF21N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| L2293QTR |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: reel; tape
Supply voltage: 2.8...36V
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: reel; tape
Supply voltage: 2.8...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| E-TDA7384A |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 46W
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 4Ω
Kind of package: tube
Integrated circuit features: stereo
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 46W
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 4Ω
Kind of package: tube
Integrated circuit features: stereo
Produkt ist nicht verfügbar
Mindestbestellmenge: 17 Stücke
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| STGWT60H65DFB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| STGWA40H65DFB2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| STGB30H65DFB2 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STGW40H65DFB-4 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STGB20H65DFB2 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STGH30H65DFB-2AG |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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| STGP30H65DFB2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGWA60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STGWA20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGWA30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGWA40H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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| STGWA50H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Produkt ist nicht verfügbar
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| STGWA100H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Produkt ist nicht verfügbar
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| STP2N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| STL2N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STD2N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LD39100PU18RY |
|
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Produkt ist nicht verfügbar
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| TSH24IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| L9663 |
|
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| TSU102IST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 3.4mV
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Input bias current: 30pA
Voltage supply range: 1.5...5.5V DC
Quiescent current: 950nA
Kind of package: reel; tape
Input offset current: 30pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 3.4mV
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Input bias current: 30pA
Voltage supply range: 1.5...5.5V DC
Quiescent current: 950nA
Kind of package: reel; tape
Input offset current: 30pA
Produkt ist nicht verfügbar
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| P0111MA 1AA3 |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 25µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 25µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
| STM6315SDW13F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
Produkt ist nicht verfügbar
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| TYN1212RG |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| TN4050-12PI |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: tube
Case: TOP3I
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 0.4kA
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: tube
Case: TOP3I
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 0.4kA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| TN5050H-12WY |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| TSC2010IST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
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| TSC2010IYST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP8NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 617 Stücke:
Lieferzeit 14-21 Tag (e)
| STW30N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISO8200B |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: PowerSO36
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
DC supply current: 9mA
Interface: SPI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: PowerSO36
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
DC supply current: 9mA
Interface: SPI
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| ISO8200BQ |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: TFQFPN32
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
Integrated circuit features: galvanically isolated
DC supply current: 9mA
Interface: SPI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: TFQFPN32
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
Integrated circuit features: galvanically isolated
DC supply current: 9mA
Interface: SPI
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| ISO8200AQ |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Interface: SPI
Supply voltage: 10.5...36V
Case: TFQFPN32
Kind of integrated circuit: high-side
Number of channels: 8
On-state resistance: 0.12Ω
Mounting: SMD
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Interface: SPI
Supply voltage: 10.5...36V
Case: TFQFPN32
Kind of integrated circuit: high-side
Number of channels: 8
On-state resistance: 0.12Ω
Mounting: SMD
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
| VIPER17HDTR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| VIPER17HN |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| T410-700T |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 4A; Igt: 10mA; TO220AB; tube; Ifsm: 31A
Typ of triac: standard
Max. off-state voltage: 700V
Max. load current: 4A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 700V; 4A; Igt: 10mA; TO220AB; tube; Ifsm: 31A
Typ of triac: standard
Max. off-state voltage: 700V
Max. load current: 4A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 31A
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| T410-800H |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: IPAK
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: IPAK
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| T410-800T |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
| STWD100NXWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| STWD100YNXWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUL49D |
|
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| STN851 |
|
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)
| 2STN1550 |
|
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
| L6920D |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
Output current: 1A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
Output current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STTH2003CG |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 110A
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 110A
Kind of package: tube
Produkt ist nicht verfügbar
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| FERD40M45CT |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
| TS472IQT |
|
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Produkt ist nicht verfügbar
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| TS472EIJT |
|
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TSC2010HYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSC2010IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSC2012HYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSC2010IYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSC2011HYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF8N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| STF8NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| STF80N900K6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| STF80N240K6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| STTH15R06FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
| STF21N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)