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STD3NK60Z-1 STD3NK60Z-1 STMicroelectronics en.CD00003099.pdf Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 2896 Stücke:
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8+2.36 EUR
75+0.87 EUR
150+0.78 EUR
525+0.72 EUR
1050+0.64 EUR
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STB14NK50Z-1 STB14NK50Z-1 STMicroelectronics en.CD00002817.pdf Description: MOSFET N-CH 500V 14A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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STP5N120 STP5N120 STMicroelectronics en.CD00160386.pdf Description: MOSFET N-CH 1200V 4.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Produkt ist nicht verfügbar
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STGP19NC60H STGP19NC60H STMicroelectronics en.CD00184202.pdf Description: IGBT 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/97ns
Switching Energy: 85µJ (on), 189µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 130 W
Produkt ist nicht verfügbar
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STP10NK70ZFP STP10NK70ZFP STMicroelectronics en.CD00003116.pdf Description: MOSFET N-CH 700V 8.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 958 Stücke:
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50+3.92 EUR
100+3.74 EUR
500+3.1 EUR
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STP75NF75FP STP75NF75FP STMicroelectronics ST%28B%2CP%2975NF75%28FP%29.pdf Description: MOSFET N-CH 75V 80A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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STP17NK40ZFP STP17NK40ZFP STMicroelectronics en.CD00003118.pdf Description: MOSFET N-CH 400V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 992 Stücke:
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STP14NK50ZFP STP14NK50ZFP STMicroelectronics en.CD00002817.pdf description Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 697 Stücke:
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STD2NK70Z-1 STD2NK70Z-1 STMicroelectronics STD2NK70Z,1.pdf Description: MOSFET N-CH 700V 1.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 800mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
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STGP19NC60HD STGP19NC60HD STMicroelectronics en.CD00144165.pdf Description: IGBT 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/97ns
Switching Energy: 85µJ (on), 189µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 130 W
auf Bestellung 14727 Stücke:
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50+2.34 EUR
100+2.12 EUR
500+1.78 EUR
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STU3N62K3 STU3N62K3 STMicroelectronics en.CD00204091.pdf Description: MOSFET N-CH 620V 2.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
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STU95N4F3 STMicroelectronics STx95N4F3.pdf Description: MOSFET N-CH 40V 80A IPAK
Produkt ist nicht verfügbar
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STI11NM60ND STI11NM60ND STMicroelectronics STX11NM60ND.pdf Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
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STI12NM50N STI12NM50N STMicroelectronics en.CD00056230.pdf Description: MOSFET N-CH 500V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V
Produkt ist nicht verfügbar
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STB141NF55-1 STB141NF55-1 STMicroelectronics STx141ND55(-1)_Rev1_Aug2007.pdf Description: MOSFET N-CH 55V 80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
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STF15NM60ND STF15NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 14A TO220FP
Produkt ist nicht verfügbar
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STI15NM60ND STI15NM60ND STMicroelectronics Description: MOSFET N-CH 600V 14A I2PAK
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STB200N4F3 STB200N4F3 STMicroelectronics en.CD00153556.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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STD7NK30Z STD7NK30Z STMicroelectronics STD%2CSTF%2CSTP7NK30Z.pdf Description: MOSFET N-CH 300V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Produkt ist nicht verfügbar
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STD70N10F4 STD70N10F4 STMicroelectronics en.CD00218149.pdf Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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STB150NF04 STB150NF04 STMicroelectronics STB_P150NF04.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Produkt ist nicht verfügbar
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STB141NF55 STB141NF55 STMicroelectronics STx141ND55(-1)_Rev1_Aug2007.pdf Description: MOSFET N-CH 55V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
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STB80NF55L-06T4 STB80NF55L-06T4 STMicroelectronics en.CD00003246.pdf Description: MOSFET N-CH 55V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
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STD70N2LH5 STD70N2LH5 STMicroelectronics en.CD00184100.pdf Description: MOSFET N-CH 25V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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STS6NF20V STS6NF20V STMicroelectronics en.CD00002342.pdf Description: MOSFET N-CH 20V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.45 EUR
5000+0.43 EUR
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STD3NK60ZD STD3NK60ZD STMicroelectronics en.CD00205552.pdf Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Produkt ist nicht verfügbar
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STD6NM60N STD6NM60N STMicroelectronics en.CD00157375.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Produkt ist nicht verfügbar
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VND1NV04-E VND1NV04-E STMicroelectronics en.CD00002207.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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STB45NF06T4 STB45NF06T4 STMicroelectronics en.CD00021353.pdf Description: MOSFET N-CH 60V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
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STL15N3LLH5 STL15N3LLH5 STMicroelectronics CD00195876.pdf Description: MOSFET N-CH 30V 15A POWERFLAT
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STD7NM80 STD7NM80 STMicroelectronics en.CD00126772.pdf Description: MOSFET N-CH 800V 6.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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STD30NF04LT STD30NF04LT STMicroelectronics vn5160s-e.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
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VND1NV04TR-E VND1NV04TR-E STMicroelectronics en.CD00002207.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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STT5PF20V STT5PF20V STMicroelectronics en.CD00003472.pdf Description: MOSFET P-CH 20V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Produkt ist nicht verfügbar
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STTH3R04RL STTH3R04RL STMicroelectronics stth3r04.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH3R04Q STTH3R04Q STMicroelectronics stth3r04.pdf Description: DIODE GEN PURP 400V 3A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04RL STTH1R04RL STMicroelectronics en.CD00199069.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04Q STTH1R04Q STMicroelectronics en.CD00199069.pdf Description: DIODE GEN PURP 400V 1A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-15 (DO-204AC)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04QRL STTH1R04QRL STMicroelectronics en.CD00199069.pdf Description: DIODE STANDARD 400V 1A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH1R04 STTH1R04 STMicroelectronics en.CD00199069.pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH3R04 STTH3R04 STMicroelectronics stth3r04.pdf Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH3R04QRL STTH3R04QRL STMicroelectronics stth3r04.pdf Description: DIODE GEN PURP 400V 3A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04U STTH1R04U STMicroelectronics en.CD00199069.pdf Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH1R04A STTH1R04A STMicroelectronics en.CD00199069.pdf Description: DIODE STANDARD 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH3R04S STTH3R04S STMicroelectronics stth3r04.pdf Description: DIODE STANDARD 400V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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STTH3R04U STTH3R04U STMicroelectronics stth3r04.pdf Description: DIODE STANDARD 400V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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LIS302SGTR LIS302SGTR STMicroelectronics en.CD00187369.pdf Description: ACCELEROMETER 2G ANALOG 14LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth
Package / Case: 14-VFLGA
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y, Z
Acceleration Range: ±2g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Bandwidth: 2kHz
Supplier Device Package: 14-LGA (3x5)
Sensitivity (mV/g): 479
Part Status: Obsolete
Produkt ist nicht verfügbar
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LIS331DL LIS331DL STMicroelectronics LIS331DL.pdf Description: ACCEL 2.3-9.2G I2C/SPI 16LGA
Packaging: Tray
Features: Adjustable Bandwidth, Selectable Scale
Package / Case: 16-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2.3g, 9.2g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.16V ~ 3.6V
Bandwidth: 50Hz ~ 200Hz
Supplier Device Package: 16-LGA (3x3)
Sensitivity (LSB/g): 55 (±2.3g) ~ 13 (±9.2g)
Part Status: Obsolete
Produkt ist nicht verfügbar
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M24C02-WMN6TP M24C02-WMN6TP STMicroelectronics M24C02-WMN6TP.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Verified
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M24C08-RMB6TG M24C08-RMB6TG STMicroelectronics M24C16%2C08%2C04%2C02%2C01_WEB.pdf Description: IC EEPROM 8KBIT I2C 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UFDFPN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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M24C08-WMN6TP M24C08-WMN6TP STMicroelectronics en.DM00070057.pdf Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
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M24128-BRDW6TP M24128-BRDW6TP STMicroelectronics en.CD00259167.pdf Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
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M24128-BRMN6TP M24128-BRMN6TP STMicroelectronics en.CD00259167.pdf Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
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M24128-BWDW6TP M24128-BWDW6TP STMicroelectronics en.CD00259167.pdf Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 2716 Stücke:
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30+0.6 EUR
100+0.53 EUR
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M24128-BWMN6TP M24128-BWMN6TP STMicroelectronics en.CD00259167.pdf Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 6272 Stücke:
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37+0.48 EUR
38+0.47 EUR
50+0.46 EUR
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M24256-BWDW6TP M24256-BWDW6TP STMicroelectronics en.CD00001891.pdf Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 1663 Stücke:
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M24256-BWMN6TP M24256-BWMN6TP STMicroelectronics en.CD00001891.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3931 Stücke:
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35+0.52 EUR
36+0.5 EUR
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M24256-BWMW6TG M24256-BWMW6TG STMicroelectronics en.CD00001891.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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M24512-WMN6TP M24512-WMN6TP STMicroelectronics en.CD00251873.pdf Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 57344 Stücke:
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M24512-WMW6TG M24512-WMW6TG STMicroelectronics M24512-x.pdf Description: IC EEPROM 512KBIT I2C 1MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 64K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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STD3NK60Z-1 en.CD00003099.pdf
STD3NK60Z-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 2896 Stücke:
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8+2.36 EUR
75+0.87 EUR
150+0.78 EUR
525+0.72 EUR
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STB14NK50Z-1 en.CD00002817.pdf
STB14NK50Z-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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STP5N120 en.CD00160386.pdf
STP5N120
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1200V 4.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Produkt ist nicht verfügbar
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STGP19NC60H en.CD00184202.pdf
STGP19NC60H
Hersteller: STMicroelectronics
Description: IGBT 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/97ns
Switching Energy: 85µJ (on), 189µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 130 W
Produkt ist nicht verfügbar
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STP10NK70ZFP en.CD00003116.pdf
STP10NK70ZFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 958 Stücke:
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Anzahl Preis
3+7.18 EUR
50+3.92 EUR
100+3.74 EUR
500+3.1 EUR
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STP75NF75FP ST%28B%2CP%2975NF75%28FP%29.pdf
STP75NF75FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 80A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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STP17NK40ZFP en.CD00003118.pdf
STP17NK40ZFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 992 Stücke:
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Anzahl Preis
3+6.81 EUR
50+3.07 EUR
100+3.01 EUR
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STP14NK50ZFP description en.CD00002817.pdf
STP14NK50ZFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+3.22 EUR
100+3.2 EUR
500+3.06 EUR
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STD2NK70Z-1 STD2NK70Z,1.pdf
STD2NK70Z-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 1.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 800mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
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STGP19NC60HD en.CD00144165.pdf
STGP19NC60HD
Hersteller: STMicroelectronics
Description: IGBT 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/97ns
Switching Energy: 85µJ (on), 189µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 130 W
auf Bestellung 14727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
50+2.34 EUR
100+2.12 EUR
500+1.78 EUR
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STU3N62K3 en.CD00204091.pdf
STU3N62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
auf Bestellung 45 Stücke:
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Anzahl Preis
6+3.31 EUR
Mindestbestellmenge: 6
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STU95N4F3 STx95N4F3.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A IPAK
Produkt ist nicht verfügbar
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STI11NM60ND STX11NM60ND.pdf
STI11NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
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STI12NM50N en.CD00056230.pdf
STI12NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V
Produkt ist nicht verfügbar
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STB141NF55-1 STx141ND55(-1)_Rev1_Aug2007.pdf
STB141NF55-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
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STF15NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STF15NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220FP
Produkt ist nicht verfügbar
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STI15NM60ND
STI15NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A I2PAK
Produkt ist nicht verfügbar
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STB200N4F3 en.CD00153556.pdf
STB200N4F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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STD7NK30Z STD%2CSTF%2CSTP7NK30Z.pdf
STD7NK30Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD70N10F4 en.CD00218149.pdf
STD70N10F4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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STB150NF04 STB_P150NF04.pdf
STB150NF04
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Produkt ist nicht verfügbar
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STB141NF55 STx141ND55(-1)_Rev1_Aug2007.pdf
STB141NF55
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
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STB80NF55L-06T4 en.CD00003246.pdf
STB80NF55L-06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
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STD70N2LH5 en.CD00184100.pdf
STD70N2LH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 25V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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STS6NF20V en.CD00002342.pdf
STS6NF20V
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD3NK60ZD en.CD00205552.pdf
STD3NK60ZD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Produkt ist nicht verfügbar
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STD6NM60N en.CD00157375.pdf
STD6NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Produkt ist nicht verfügbar
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VND1NV04-E en.CD00002207.pdf
VND1NV04-E
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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STB45NF06T4 en.CD00021353.pdf
STB45NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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STL15N3LLH5 CD00195876.pdf
STL15N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 15A POWERFLAT
Produkt ist nicht verfügbar
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STD7NM80 en.CD00126772.pdf
STD7NM80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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STD30NF04LT vn5160s-e.pdf
STD30NF04LT
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Produkt ist nicht verfügbar
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VND1NV04TR-E en.CD00002207.pdf
VND1NV04TR-E
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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STT5PF20V en.CD00003472.pdf
STT5PF20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Produkt ist nicht verfügbar
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STTH3R04RL stth3r04.pdf
STTH3R04RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1900+0.19 EUR
5700+0.18 EUR
Mindestbestellmenge: 1900
Im Einkaufswagen  Stück im Wert von  UAH
STTH3R04Q stth3r04.pdf
STTH3R04Q
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 3A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04RL en.CD00199069.pdf
STTH1R04RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04Q en.CD00199069.pdf
STTH1R04Q
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 1A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-15 (DO-204AC)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04QRL en.CD00199069.pdf
STTH1R04QRL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.11 EUR
12000+0.1 EUR
18000+0.098 EUR
Mindestbestellmenge: 6000
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STTH1R04 en.CD00199069.pdf
STTH1R04
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH3R04 stth3r04.pdf
STTH3R04
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH3R04QRL stth3r04.pdf
STTH3R04QRL
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 3A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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STTH1R04U en.CD00199069.pdf
STTH1R04U
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.13 EUR
Mindestbestellmenge: 2500
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STTH1R04A en.CD00199069.pdf
STTH1R04A
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.13 EUR
Mindestbestellmenge: 5000
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STTH3R04S stth3r04.pdf
STTH3R04S
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STTH3R04U stth3r04.pdf
STTH3R04U
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 17500 Stücke:
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Anzahl Preis
2500+0.2 EUR
5000+0.19 EUR
Mindestbestellmenge: 2500
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LIS302SGTR en.CD00187369.pdf
LIS302SGTR
Hersteller: STMicroelectronics
Description: ACCELEROMETER 2G ANALOG 14LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth
Package / Case: 14-VFLGA
Output Type: Analog Voltage
Mounting Type: Surface Mount
Type: Analog
Axis: X, Y, Z
Acceleration Range: ±2g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Bandwidth: 2kHz
Supplier Device Package: 14-LGA (3x5)
Sensitivity (mV/g): 479
Part Status: Obsolete
Produkt ist nicht verfügbar
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LIS331DL LIS331DL.pdf
LIS331DL
Hersteller: STMicroelectronics
Description: ACCEL 2.3-9.2G I2C/SPI 16LGA
Packaging: Tray
Features: Adjustable Bandwidth, Selectable Scale
Package / Case: 16-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2.3g, 9.2g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.16V ~ 3.6V
Bandwidth: 50Hz ~ 200Hz
Supplier Device Package: 16-LGA (3x3)
Sensitivity (LSB/g): 55 (±2.3g) ~ 13 (±9.2g)
Part Status: Obsolete
Produkt ist nicht verfügbar
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M24C02-WMN6TP M24C02-WMN6TP.pdf
M24C02-WMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Verified
auf Bestellung 23367 Stücke:
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Anzahl Preis
77+0.23 EUR
85+0.21 EUR
86+0.2 EUR
250+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 77
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M24C08-RMB6TG M24C16%2C08%2C04%2C02%2C01_WEB.pdf
M24C08-RMB6TG
Hersteller: STMicroelectronics
Description: IC EEPROM 8KBIT I2C 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UFDFPN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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M24C08-WMN6TP en.DM00070057.pdf
M24C08-WMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
auf Bestellung 5668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
70+0.25 EUR
73+0.24 EUR
250+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 67
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M24128-BRDW6TP en.CD00259167.pdf
M24128-BRDW6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 15780 Stücke:
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Anzahl Preis
34+0.53 EUR
36+0.5 EUR
37+0.49 EUR
50+0.48 EUR
100+0.47 EUR
250+0.45 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 34
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M24128-BRMN6TP en.CD00259167.pdf
M24128-BRMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 5949 Stücke:
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Anzahl Preis
35+0.51 EUR
37+0.48 EUR
38+0.47 EUR
50+0.46 EUR
100+0.45 EUR
250+0.44 EUR
500+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 35
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M24128-BWDW6TP en.CD00259167.pdf
M24128-BWDW6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
auf Bestellung 2716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
30+0.6 EUR
100+0.53 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 28
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M24128-BWMN6TP en.CD00259167.pdf
M24128-BWMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 6272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
37+0.48 EUR
38+0.47 EUR
50+0.46 EUR
100+0.45 EUR
250+0.44 EUR
500+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 35
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M24256-BWDW6TP en.CD00001891.pdf
M24256-BWDW6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 1663 Stücke:
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Anzahl Preis
28+0.63 EUR
30+0.6 EUR
31+0.58 EUR
50+0.57 EUR
100+0.56 EUR
250+0.54 EUR
500+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 28
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M24256-BWMN6TP en.CD00001891.pdf
M24256-BWMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
35+0.52 EUR
36+0.5 EUR
50+0.49 EUR
100+0.48 EUR
250+0.47 EUR
500+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 33
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M24256-BWMW6TG en.CD00001891.pdf
M24256-BWMW6TG
Hersteller: STMicroelectronics
Description: IC EEPROM 256KBIT I2C 1MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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M24512-WMN6TP en.CD00251873.pdf
M24512-WMN6TP
Hersteller: STMicroelectronics
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 57344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
15+1.18 EUR
25+1.15 EUR
50+1.12 EUR
100+1.1 EUR
250+1.07 EUR
500+1.04 EUR
1000+1.02 EUR
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M24512-WMW6TG M24512-x.pdf
M24512-WMW6TG
Hersteller: STMicroelectronics
Description: IC EEPROM 512KBIT I2C 1MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 64K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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