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STW30NM60N STW30NM60N STMicroelectronics en.CD00174866.pdf Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STW30NM60ND STW30NM60ND STMicroelectronics en.CD00174884.pdf Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM50N STW43NM50N STMicroelectronics en.CD00176806.pdf Description: MOSFET N-CH 500V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM60N STW43NM60N STMicroelectronics STW43NM60N.pdf Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM60ND STW43NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Produkt ist nicht verfügbar
STW55NM50N STW55NM50N STMicroelectronics en.CD00182353.pdf Description: MOSFET N-CH 500V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Produkt ist nicht verfügbar
STW75NF30 STW75NF30 STMicroelectronics Description: MOSFET N-CH 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Produkt ist nicht verfügbar
STW90NF20 STW90NF20 STMicroelectronics en.CD00205538.pdf Description: MOSFET N-CH 200V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Produkt ist nicht verfügbar
STW9N150 STW9N150 STMicroelectronics en.CD00160703.pdf Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Produkt ist nicht verfügbar
STY80NM60N STY80NM60N STMicroelectronics STY80NM60N.pdf Description: MOSFET N-CH 600V 74A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Power Dissipation (Max): 447W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Produkt ist nicht verfügbar
DVIULC6-2P6 DVIULC6-2P6 STMicroelectronics en.CD00195547.pdf Description: TVS DIODE 5V 17V SOT666
Produkt ist nicht verfügbar
STB15NM60ND STB15NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 14A D2PAK
Produkt ist nicht verfügbar
STB21NM60ND STB21NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
STB23NM60ND STB23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Produkt ist nicht verfügbar
STB25NM60ND STB25NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60N STB30NM60N STMicroelectronics en.CD00174866.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60ND STB30NM60ND STMicroelectronics en.CD00174884.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STB3N62K3 STB3N62K3 STMicroelectronics en.CD00204091.pdf Description: MOSFET N-CH 620V 2.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD11NM60ND STD11NM60ND STMicroelectronics STX11NM60ND.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
STD3N62K3 STD3N62K3 STMicroelectronics en.CD00204091.pdf Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD90N4F3 STD90N4F3 STMicroelectronics en.CD00177924.pdf Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STGB19NC60KT4 STGB19NC60KT4 STMicroelectronics en.CD00196441.pdf Description: IGBT 600V 35A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/105ns
Switching Energy: 165µJ (on), 255µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STL150N3LLH5 STL150N3LLH5 STMicroelectronics en.CD00174878.pdf Description: MOSFET N-CH 30V 35A POWERFLAT5X6
Produkt ist nicht verfügbar
STL65N3LLH5 STL65N3LLH5 STMicroelectronics en.CD00181429.pdf Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.82 EUR
Mindestbestellmenge: 3000
STL75NH3LL STL75NH3LL STMicroelectronics en.CD00201264.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Produkt ist nicht verfügbar
STL80N4LLF3 STL80N4LLF3 STMicroelectronics CD00055111.pdf Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STPS5L60S STPS5L60S STMicroelectronics en.CD00002924.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.81 EUR
5000+ 0.77 EUR
12500+ 0.71 EUR
25000+ 0.7 EUR
Mindestbestellmenge: 2500
STS15N4LLF3 STS15N4LLF3 STMicroelectronics en.CD00114508.pdf Description: MOSFET N-CH 40V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Produkt ist nicht verfügbar
DVIULC6-2P6 DVIULC6-2P6 STMicroelectronics en.CD00195547.pdf Description: TVS DIODE 5V 17V SOT666
Produkt ist nicht verfügbar
STB15NM60ND STB15NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 14A D2PAK
Produkt ist nicht verfügbar
STB21NM60ND STB21NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.98 EUR
10+ 12.59 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
STB23NM60ND STB23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Produkt ist nicht verfügbar
STB25NM60ND STB25NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-350-v-to-700-v.html Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60N STB30NM60N STMicroelectronics en.CD00174866.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60ND STB30NM60ND STMicroelectronics en.CD00174884.pdf Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STB3N62K3 STB3N62K3 STMicroelectronics en.CD00204091.pdf Description: MOSFET N-CH 620V 2.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD11NM60ND STD11NM60ND STMicroelectronics STX11NM60ND.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
auf Bestellung 1167 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.58 EUR
10+ 7.2 EUR
100+ 5.83 EUR
500+ 5.18 EUR
1000+ 4.43 EUR
Mindestbestellmenge: 4
STD3N62K3 STD3N62K3 STMicroelectronics en.CD00204091.pdf Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
auf Bestellung 3584 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.42 EUR
14+ 1.98 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 11
STD4NS25T4 STD4NS25T4 STMicroelectronics en.CD00002232.pdf Description: MOSFET N-CH 250V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
STD90N4F3 STD90N4F3 STMicroelectronics en.CD00177924.pdf Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STL150N3LLH5 STL150N3LLH5 STMicroelectronics en.CD00174878.pdf Description: MOSFET N-CH 30V 35A POWERFLAT5X6
Produkt ist nicht verfügbar
STL65N3LLH5 STL65N3LLH5 STMicroelectronics en.CD00181429.pdf Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 3727 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.96 EUR
11+ 2.42 EUR
100+ 2.12 EUR
500+ 1.99 EUR
1000+ 1.96 EUR
Mindestbestellmenge: 9
STL75NH3LL STL75NH3LL STMicroelectronics en.CD00201264.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
auf Bestellung 2946 Stücke:
Lieferzeit 21-28 Tag (e)
STL80N4LLF3 STL80N4LLF3 STMicroelectronics CD00055111.pdf Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STPS5L60S STPS5L60S STMicroelectronics en.CD00002924.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 42859 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
15+ 1.85 EUR
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500+ 1.07 EUR
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Mindestbestellmenge: 13
STL80N4LLF3 STL80N4LLF3 STMicroelectronics CD00055111.pdf Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STEVAL-CCA010V1 STEVAL-CCA010V1 STMicroelectronics STEVAL-CCA010V1.pdf Description: BOARD EVAL TSH122 BASED
Packaging: Bulk
Function: Amplifier, Single
Type: Video
Utilized IC / Part: TSH122
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Filter with SAG Correction
Embedded: No
Produkt ist nicht verfügbar
STEVAL-ILL015V1 STEVAL-ILL015V1 STMicroelectronics en.CD00222039.pdf Description: BOARD EVAL STP24DP05/STM32 BASED
Features: 24-Bit with Diagnostic Feature
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 7.5V ~ 18V
Current - Output / Channel: 80mA
Utilized IC / Part: STP24DP05
Supplied Contents: Board(s), Cable(s)
Outputs and Type: 16 RGB, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
BAS70-08SFILM BAS70-08SFILM STMicroelectronics bas70.pdf Description: DIODE ARRAY SCHOTTKY 70V SOT323
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-323-6L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
BAS70-08SFILM BAS70-08SFILM STMicroelectronics bas70.pdf Description: DIODE ARRAY SCHOTTKY 70V SOT323
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-323-6L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
L2293QTR L2293QTR STMicroelectronics en.CD00204113.pdf Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+5.3 EUR
Mindestbestellmenge: 3000
L6229QTR L6229QTR STMicroelectronics en.CD00218185.pdf Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+7.65 EUR
Mindestbestellmenge: 3000
L6743DTR L6743DTR STMicroelectronics Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
STCL132KRDEAW89 STCL132KRDEAW89 STMicroelectronics CD00162498.pdf Description: IC OSC SILICON 32.768KHZ SOT3235
Produkt ist nicht verfügbar
STG4210QTR STG4210QTR STMicroelectronics en.CD00208080.pdf Description: IC SWITCH DUAL SPST 10QFN
Produkt ist nicht verfügbar
STHDLS101TQTR STHDLS101TQTR STMicroelectronics en.CD00202849.pdf Description: IC VIDEO LEVEL SHIFTER 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-QFN
Mounting Type: Surface Mount
Function: Level Shifter
Voltage - Supply: 3.3V
Applications: Consumer Video
Standards: HDMI 1.3
Supplier Device Package: 48-QFN-EP (7x7)
Control Interface: Serial
Produkt ist nicht verfügbar
STOD02PUR STOD02PUR STMicroelectronics STOD02.pdf Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
STP16CPS05PTR STP16CPS05PTR STMicroelectronics en.CD00126635.pdf Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
STTS424BDN3F STTS424BDN3F STMicroelectronics CD00157556.pdf Description: IC MEMORY MOD TEMP SENSOR 8-TDFN
Produkt ist nicht verfügbar
L2293QTR L2293QTR STMicroelectronics en.CD00204113.pdf Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
auf Bestellung 4625 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.56 EUR
10+ 9.48 EUR
25+ 8.96 EUR
100+ 7.77 EUR
250+ 7.37 EUR
500+ 6.61 EUR
1000+ 5.58 EUR
Mindestbestellmenge: 3
STW30NM60N en.CD00174866.pdf
STW30NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STW30NM60ND en.CD00174884.pdf
STW30NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM50N en.CD00176806.pdf
STW43NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM60N STW43NM60N.pdf
STW43NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Produkt ist nicht verfügbar
STW43NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STW43NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Produkt ist nicht verfügbar
STW55NM50N en.CD00182353.pdf
STW55NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Produkt ist nicht verfügbar
STW75NF30
STW75NF30
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Produkt ist nicht verfügbar
STW90NF20 en.CD00205538.pdf
STW90NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Produkt ist nicht verfügbar
STW9N150 en.CD00160703.pdf
STW9N150
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Produkt ist nicht verfügbar
STY80NM60N STY80NM60N.pdf
STY80NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Power Dissipation (Max): 447W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Produkt ist nicht verfügbar
DVIULC6-2P6 en.CD00195547.pdf
DVIULC6-2P6
Hersteller: STMicroelectronics
Description: TVS DIODE 5V 17V SOT666
Produkt ist nicht verfügbar
STB15NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB15NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK
Produkt ist nicht verfügbar
STB21NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB21NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
STB23NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB23NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Produkt ist nicht verfügbar
STB25NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB25NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60N en.CD00174866.pdf
STB30NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60ND en.CD00174884.pdf
STB30NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STB3N62K3 en.CD00204091.pdf
STB3N62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD11NM60ND STX11NM60ND.pdf
STD11NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
STD3N62K3 en.CD00204091.pdf
STD3N62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD90N4F3 en.CD00177924.pdf
STD90N4F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STGB19NC60KT4 en.CD00196441.pdf
STGB19NC60KT4
Hersteller: STMicroelectronics
Description: IGBT 600V 35A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/105ns
Switching Energy: 165µJ (on), 255µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STL150N3LLH5 en.CD00174878.pdf
STL150N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 35A POWERFLAT5X6
Produkt ist nicht verfügbar
STL65N3LLH5 en.CD00181429.pdf
STL65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.82 EUR
Mindestbestellmenge: 3000
STL75NH3LL en.CD00201264.pdf
STL75NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Produkt ist nicht verfügbar
STL80N4LLF3 CD00055111.pdf
STL80N4LLF3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STPS5L60S en.CD00002924.pdf
STPS5L60S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.81 EUR
5000+ 0.77 EUR
12500+ 0.71 EUR
25000+ 0.7 EUR
Mindestbestellmenge: 2500
STS15N4LLF3 en.CD00114508.pdf
STS15N4LLF3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Produkt ist nicht verfügbar
DVIULC6-2P6 en.CD00195547.pdf
DVIULC6-2P6
Hersteller: STMicroelectronics
Description: TVS DIODE 5V 17V SOT666
Produkt ist nicht verfügbar
STB15NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB15NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK
Produkt ist nicht verfügbar
STB21NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB21NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.98 EUR
10+ 12.59 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
STB23NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB23NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Produkt ist nicht verfügbar
STB25NM60ND stpower-n-channel-mosfets-gt-350-v-to-700-v.html
STB25NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60N en.CD00174866.pdf
STB30NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
STB30NM60ND en.CD00174884.pdf
STB30NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Produkt ist nicht verfügbar
STB3N62K3 en.CD00204091.pdf
STB3N62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
STD11NM60ND STX11NM60ND.pdf
STD11NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
auf Bestellung 1167 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.58 EUR
10+ 7.2 EUR
100+ 5.83 EUR
500+ 5.18 EUR
1000+ 4.43 EUR
Mindestbestellmenge: 4
STD3N62K3 en.CD00204091.pdf
STD3N62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
auf Bestellung 3584 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
14+ 1.98 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 11
STD4NS25T4 en.CD00002232.pdf
STD4NS25T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
STD90N4F3 en.CD00177924.pdf
STD90N4F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STL150N3LLH5 en.CD00174878.pdf
STL150N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 35A POWERFLAT5X6
Produkt ist nicht verfügbar
STL65N3LLH5 en.CD00181429.pdf
STL65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 3727 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.96 EUR
11+ 2.42 EUR
100+ 2.12 EUR
500+ 1.99 EUR
1000+ 1.96 EUR
Mindestbestellmenge: 9
STL75NH3LL en.CD00201264.pdf
STL75NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
auf Bestellung 2946 Stücke:
Lieferzeit 21-28 Tag (e)
STL80N4LLF3 CD00055111.pdf
STL80N4LLF3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STPS5L60S en.CD00002924.pdf
STPS5L60S
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 42859 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.13 EUR
15+ 1.85 EUR
100+ 1.28 EUR
500+ 1.07 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
STL80N4LLF3 CD00055111.pdf
STL80N4LLF3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5
Produkt ist nicht verfügbar
STEVAL-CCA010V1 STEVAL-CCA010V1.pdf
STEVAL-CCA010V1
Hersteller: STMicroelectronics
Description: BOARD EVAL TSH122 BASED
Packaging: Bulk
Function: Amplifier, Single
Type: Video
Utilized IC / Part: TSH122
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Filter with SAG Correction
Embedded: No
Produkt ist nicht verfügbar
STEVAL-ILL015V1 en.CD00222039.pdf
STEVAL-ILL015V1
Hersteller: STMicroelectronics
Description: BOARD EVAL STP24DP05/STM32 BASED
Features: 24-Bit with Diagnostic Feature
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 7.5V ~ 18V
Current - Output / Channel: 80mA
Utilized IC / Part: STP24DP05
Supplied Contents: Board(s), Cable(s)
Outputs and Type: 16 RGB, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
BAS70-08SFILM bas70.pdf
BAS70-08SFILM
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 70V SOT323
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-323-6L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
BAS70-08SFILM bas70.pdf
BAS70-08SFILM
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 70V SOT323
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-323-6L
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
L2293QTR en.CD00204113.pdf
L2293QTR
Hersteller: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+5.3 EUR
Mindestbestellmenge: 3000
L6229QTR en.CD00218185.pdf
L6229QTR
Hersteller: STMicroelectronics
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+7.65 EUR
Mindestbestellmenge: 3000
L6743DTR
L6743DTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
STCL132KRDEAW89 CD00162498.pdf
STCL132KRDEAW89
Hersteller: STMicroelectronics
Description: IC OSC SILICON 32.768KHZ SOT3235
Produkt ist nicht verfügbar
STG4210QTR en.CD00208080.pdf
STG4210QTR
Hersteller: STMicroelectronics
Description: IC SWITCH DUAL SPST 10QFN
Produkt ist nicht verfügbar
STHDLS101TQTR en.CD00202849.pdf
STHDLS101TQTR
Hersteller: STMicroelectronics
Description: IC VIDEO LEVEL SHIFTER 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-QFN
Mounting Type: Surface Mount
Function: Level Shifter
Voltage - Supply: 3.3V
Applications: Consumer Video
Standards: HDMI 1.3
Supplier Device Package: 48-QFN-EP (7x7)
Control Interface: Serial
Produkt ist nicht verfügbar
STOD02PUR STOD02.pdf
STOD02PUR
Hersteller: STMicroelectronics
Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
STP16CPS05PTR en.CD00126635.pdf
STP16CPS05PTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
STTS424BDN3F CD00157556.pdf
STTS424BDN3F
Hersteller: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN
Produkt ist nicht verfügbar
L2293QTR en.CD00204113.pdf
L2293QTR
Hersteller: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
auf Bestellung 4625 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.56 EUR
10+ 9.48 EUR
25+ 8.96 EUR
100+ 7.77 EUR
250+ 7.37 EUR
500+ 6.61 EUR
1000+ 5.58 EUR
Mindestbestellmenge: 3
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