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BC807-25WH RFG BC807-25WH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC807-25WH Description: SOT-323, -50V, -0.5A, PNP TRANS
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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SMA4S39AH SMA4S39AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 39VWM 63.3VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.3A
Voltage - Reverse Standoff (Typ): 39V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.6V
Voltage - Clamping (Max) @ Ipp: 63.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S1JFS S1JFS Taiwan Semiconductor Corporation S1DFS SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S1JFS S1JFS Taiwan Semiconductor Corporation S1DFS SERIES_C2103.pdf Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PE4DCH PE4DCH Taiwan Semiconductor Corporation PE4BCH SERIES_A2212.pdf Description: DIODE STANDARD 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PE4DCH PE4DCH Taiwan Semiconductor Corporation PE4BCH SERIES_A2212.pdf Description: DIODE STANDARD 200V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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SMB10J30CAH SMB10J30CAH Taiwan Semiconductor Corporation SMB10JH SERIES_A2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S1JMH S1JMH Taiwan Semiconductor Corporation S1GMH SERIES_A2103.pdf Description: DIODE STANDARD 600V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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S1JMH S1JMH Taiwan Semiconductor Corporation S1GMH SERIES_A2103.pdf Description: DIODE STANDARD 600V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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HS1J HS1J Taiwan Semiconductor Corporation HS1A SERIES_M2401.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1J HS1J Taiwan Semiconductor Corporation HS1A SERIES_M2401.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1JM S1JM Taiwan Semiconductor Corporation S1GM SERIES_I2103.pdf Description: DIODE STANDARD 600V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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S1JM S1JM Taiwan Semiconductor Corporation S1GM SERIES_I2103.pdf Description: DIODE STANDARD 600V 1A MICRO SMA
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
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SMA4F18AH SMA4F18AH Taiwan Semiconductor Corporation SMA4F12AH SERIES_C2103.pdf Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH SMA4F18AH Taiwan Semiconductor Corporation SMA4F12AH SERIES_C2103.pdf Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH MWG SMA4F18AH MWG Taiwan Semiconductor Corporation SMA4F12AH SERIES_C2103.pdf Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH MWG SMA4F18AH MWG Taiwan Semiconductor Corporation SMA4F12AH SERIES_C2103.pdf Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S3KH S3KH Taiwan Semiconductor Corporation S3AH SERIES_B2301.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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S3KH S3KH Taiwan Semiconductor Corporation S3AH SERIES_B2301.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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HS3KH HS3KH Taiwan Semiconductor Corporation HS3AH SERIES_A2102.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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HS3KH HS3KH Taiwan Semiconductor Corporation HS3AH SERIES_A2102.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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S3KHM6G S3KHM6G Taiwan Semiconductor Corporation S3A%20SERIES_O2301.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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S3KHR7G S3KHR7G Taiwan Semiconductor Corporation S3A%20SERIES_O2301.pdf Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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SMB10J26CAH SMB10J26CAH Taiwan Semiconductor Corporation SMB10JH SERIES_A2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMB10J26CAHR5G SMB10J26CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DBL154G Taiwan Semiconductor Corporation DBL151G SERIES_L2103.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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DBL154GH Taiwan Semiconductor Corporation DBL151G SERIES_L2103.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: AEC-Q101
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DBL154G-T DBL154G-T Taiwan Semiconductor Corporation DBL154G-T%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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RS2AAH RS2AAH Taiwan Semiconductor Corporation RS2AAH SERIES_B2304.pdf Description: DIODE STANDARD 50V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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BZX55C5V6 BZX55C5V6 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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BZX84C6V2H RFG BZX84C6V2H RFG Taiwan Semiconductor Corporation pdf.php?pn=BZX84C6V2H Description: SOT-23, 300MW, 5%, 6.2V, ZENER D
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX84C9V1 BZX84C9V1 Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 9.1V 300MW SOT23
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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SMAJ8.0CAH SMAJ8.0CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ15AH SMBJ15AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.1A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S1GALH S1GALH Taiwan Semiconductor Corporation S1DALH SERIES_B2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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S1GALH S1GALH Taiwan Semiconductor Corporation S1DALH SERIES_B2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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S1GAL S1GAL Taiwan Semiconductor Corporation S1DAL SERIES_B2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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S1GAL S1GAL Taiwan Semiconductor Corporation S1DAL SERIES_B2103.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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TSM007NM03LCR RGG TSM007NM03LCR RGG Taiwan Semiconductor Corporation pdf.php?pn=TSM007NM03LCR Description: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
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TSM007NM03LCR RGG TSM007NM03LCR RGG Taiwan Semiconductor Corporation pdf.php?pn=TSM007NM03LCR Description: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
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BZX55C2V7 BZX55C2V7 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 2.7V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 85 Ohms
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1.5SMC33CA 1.5SMC33CA Taiwan Semiconductor Corporation 1.5SMC SERIES_S2207.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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5KSMC33CAH 5KSMC33CAH Taiwan Semiconductor Corporation pdf.php?pn=5KSMC33CAH Description: 5000W, 38.6V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX55C12 BZX55C12 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
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P4KE350CA P4KE350CA Taiwan Semiconductor Corporation P4KE SERIES_N2104.pdf Description: TVS DIODE 300VWM 482VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 400W
Power Line Protection: No
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1PGSMC5359 1PGSMC5359 Taiwan Semiconductor Corporation 1PGSMC5348 SERIES_D2102.pdf Description: DIODE ZENER 24V 5W DO214AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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MMSZ5238BH RHG MMSZ5238BH RHG Taiwan Semiconductor Corporation pdf.php?pn=MMSZ5238BH Description: SOD-123, 500MW, 5%, 8.7V, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
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BC857BWH RFG BC857BWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BWH Description: 100MA, -50V PNP TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC857BWH RFG BC857BWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BWH Description: 100MA, -50V PNP TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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TS358CS TS358CS Taiwan Semiconductor Corporation TS358_B15.pdf Description: DUAL OPERATING AMPLIFIER
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.4V/µs
Current - Supply: 1.5mA
Operating Temperature: 0°C ~ 70°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TS317LCS TS317LCS Taiwan Semiconductor Corporation Description: IC REG LIN POS ADJ 100MA 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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TSM085P03CS TSM085P03CS Taiwan Semiconductor Corporation Description: -30, -34, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V
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TSM9435CS TSM9435CS Taiwan Semiconductor Corporation Description: -30V, -5.3A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
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TSM4925DCS TSM4925DCS Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 30V 7.1A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TSM9434CS TSM9434CS Taiwan Semiconductor Corporation Description: -20V, -6.4A, SINGLE P-CHANNEL PO
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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TS2509CS TS2509CS Taiwan Semiconductor Corporation TS2509_B09.pdf Description: PWM BUCK CONTROLLER 3A 500KHZ
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Soft Start
Synchronous Rectifier: No
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 3.6V ~ 23V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 125°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RS2DFL RS2DFL Taiwan Semiconductor Corporation RS2DFL SERIES_B2103.pdf Description: DIODE STANDARD 200V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS2DFL RS2DFL Taiwan Semiconductor Corporation RS2DFL SERIES_B2103.pdf Description: DIODE STANDARD 200V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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PE4BCH PE4BCH Taiwan Semiconductor Corporation PE4BCH SERIES_A2212.pdf Description: DIODE STANDARD 100V 4A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
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PE4BCH PE4BCH Taiwan Semiconductor Corporation PE4BCH SERIES_A2212.pdf Description: DIODE STANDARD 100V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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BC807-25WH RFG pdf.php?pn=BC807-25WH
BC807-25WH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-323, -50V, -0.5A, PNP TRANS
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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SMA4S39AH SMA4S12AH SERIES_C2103.pdf
SMA4S39AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 39VWM 63.3VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.3A
Voltage - Reverse Standoff (Typ): 39V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.6V
Voltage - Clamping (Max) @ Ipp: 63.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S1JFS S1DFS SERIES_C2103.pdf
S1JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S1JFS S1DFS SERIES_C2103.pdf
S1JFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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PE4DCH PE4BCH SERIES_A2212.pdf
PE4DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PE4DCH PE4BCH SERIES_A2212.pdf
PE4DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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SMB10J30CAH SMB10JH SERIES_A2102.pdf
SMB10J30CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1JMH S1GMH SERIES_A2103.pdf
S1JMH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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S1JMH S1GMH SERIES_A2103.pdf
S1JMH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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HS1J HS1A SERIES_M2401.pdf
HS1J
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1J HS1A SERIES_M2401.pdf
HS1J
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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S1JM S1GM SERIES_I2103.pdf
S1JM
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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S1JM S1GM SERIES_I2103.pdf
S1JM
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A MICRO SMA
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
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SMA4F18AH SMA4F12AH SERIES_C2103.pdf
SMA4F18AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH SMA4F12AH SERIES_C2103.pdf
SMA4F18AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH MWG SMA4F12AH SERIES_C2103.pdf
SMA4F18AH MWG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMA4F18AH MWG SMA4F12AH SERIES_C2103.pdf
SMA4F18AH MWG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 18VWM 29.2VC THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: Thin SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.1V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S3KH S3AH SERIES_B2301.pdf
S3KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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S3KH S3AH SERIES_B2301.pdf
S3KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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HS3KH HS3AH SERIES_A2102.pdf
HS3KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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HS3KH HS3AH SERIES_A2102.pdf
HS3KH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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16+1.34 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.37 EUR
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S3KHM6G S3A%20SERIES_O2301.pdf
S3KHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S3KHR7G S3A%20SERIES_O2301.pdf
S3KHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB10J26CAH SMB10JH SERIES_A2102.pdf
SMB10J26CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMB10J26CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J26CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 23.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DBL154G DBL151G SERIES_L2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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50+0.76 EUR
100+0.68 EUR
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5000+0.38 EUR
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DBL154GH DBL151G SERIES_L2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: AEC-Q101
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13+1.65 EUR
50+0.76 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.46 EUR
2000+0.43 EUR
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DBL154G-T DBL154G-T%20SERIES_C2103.pdf
DBL154G-T
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1.5A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
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RS2AAH RS2AAH SERIES_B2304.pdf
RS2AAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX55C5V6 BZX55C2V0%20SERIES_E2301.pdf
BZX55C5V6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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BZX84C6V2H RFG pdf.php?pn=BZX84C6V2H
BZX84C6V2H RFG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-23, 300MW, 5%, 6.2V, ZENER D
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C9V1 BZX84C2V4%20SERIES_F2001.pdf
BZX84C9V1
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 300MW SOT23
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Produkt ist nicht verfügbar
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SMAJ8.0CAH SMAJH SERIES_A2102.pdf
SMAJ8.0CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ15AH SMBJH SERIES_A2102.pdf
SMBJ15AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.1A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1GALH S1DALH SERIES_B2103.pdf
S1GALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1GALH S1DALH SERIES_B2103.pdf
S1GALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1GAL S1DAL SERIES_B2103.pdf
S1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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S1GAL S1DAL SERIES_B2103.pdf
S1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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TSM007NM03LCR RGG pdf.php?pn=TSM007NM03LCR
TSM007NM03LCR RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
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5000+1.81 EUR
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TSM007NM03LCR RGG pdf.php?pn=TSM007NM03LCR
TSM007NM03LCR RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 120A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13124 pF @ 15 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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4+5.78 EUR
10+3.76 EUR
100+2.62 EUR
500+2.21 EUR
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BZX55C2V7 BZX55C2V0%20SERIES_E2301.pdf
BZX55C2V7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 85 Ohms
Produkt ist nicht verfügbar
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1.5SMC33CA 1.5SMC SERIES_S2207.pdf
1.5SMC33CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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5KSMC33CAH pdf.php?pn=5KSMC33CAH
5KSMC33CAH
Hersteller: Taiwan Semiconductor Corporation
Description: 5000W, 38.6V, 5%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V (Max)
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX55C12 BZX55C2V0%20SERIES_E2301.pdf
BZX55C12
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Produkt ist nicht verfügbar
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P4KE350CA P4KE SERIES_N2104.pdf
P4KE350CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 300VWM 482VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 400W
Power Line Protection: No
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5000+0.27 EUR
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1PGSMC5359 1PGSMC5348 SERIES_D2102.pdf
1PGSMC5359
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 5W DO214AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Produkt ist nicht verfügbar
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MMSZ5238BH RHG pdf.php?pn=MMSZ5238BH
MMSZ5238BH RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, 8.7V, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
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BC857BWH RFG pdf.php?pn=BC857BWH
BC857BWH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, -50V PNP TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC857BWH RFG pdf.php?pn=BC857BWH
BC857BWH RFG
Hersteller: Taiwan Semiconductor Corporation
Description: 100MA, -50V PNP TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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TS358CS TS358_B15.pdf
TS358CS
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL OPERATING AMPLIFIER
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.4V/µs
Current - Supply: 1.5mA
Operating Temperature: 0°C ~ 70°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TS317LCS
TS317LCS
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 100MA 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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TSM085P03CS
TSM085P03CS
Hersteller: Taiwan Semiconductor Corporation
Description: -30, -34, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3216 pF @ 15 V
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TSM9435CS
TSM9435CS
Hersteller: Taiwan Semiconductor Corporation
Description: -30V, -5.3A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
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TSM4925DCS
TSM4925DCS
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 30V 7.1A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSM9434CS
TSM9434CS
Hersteller: Taiwan Semiconductor Corporation
Description: -20V, -6.4A, SINGLE P-CHANNEL PO
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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TS2509CS TS2509_B09.pdf
TS2509CS
Hersteller: Taiwan Semiconductor Corporation
Description: PWM BUCK CONTROLLER 3A 500KHZ
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Soft Start
Synchronous Rectifier: No
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 3.6V ~ 23V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 125°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2DFL RS2DFL SERIES_B2103.pdf
RS2DFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS2DFL RS2DFL SERIES_B2103.pdf
RS2DFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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PE4BCH PE4BCH SERIES_A2212.pdf
PE4BCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 4A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
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PE4BCH PE4BCH SERIES_A2212.pdf
PE4BCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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