Produkte > TEXAS INSTRUMENTS > Alle Produkte des Herstellers TEXAS INSTRUMENTS (538190) > Seite 1895 nach 8970
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BQ29705DSER | Texas Instruments |
Description: IC BATT PROT LI-ION 1CELL 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WFDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-WSON (1.5x1.5) Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 3202 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ29706DSER | Texas Instruments |
Description: IC BATT PROT LI-ION 1CELL 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WFDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-WSON (1.5x1.5) Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 10580 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ29707DSER | Texas Instruments |
Description: IC BATT PROT LI-ION 1CELL 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WFDFN Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-WSON (1.5x1.5) Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 171 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ34Z100PWR-G1 | Texas Instruments |
Description: IC BATT MON MULTI-CHEM 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Battery Monitor Interface: HDQ, I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 14-TSSOP Part Status: Active |
auf Bestellung 2342 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ500211RGZT | Texas Instruments |
Description: IC WIRELESS PWR TX 48VQFNPart Status: Not For New Designs Supplier Device Package: 48-VQFN (7x7) Current - Supply: 52mA Applications: Wireless Power Transmitter Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ51003YFPR | Texas Instruments |
Description: IC WIRELESS PWR RCVR 28DSBGA |
auf Bestellung 2478 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ51010BYFPR | Texas Instruments |
Description: IC WIRELESS PWR RCVR 28DSBGA |
auf Bestellung 2468 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ51013ARHLT | Texas Instruments |
Description: IC WIRELESS PWR RCVR 20QFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 4V ~ 10V Applications: Wireless Power Receiver Current - Supply: 1.5A Supplier Device Package: 20-VQFN (3.5x4.5) Part Status: Active |
auf Bestellung 5171 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ51013BYFPR | Texas Instruments |
Description: IC WIRELESS PWR RCVR 28DSBGAPackaging: Cut Tape (CT) Package / Case: 28-XFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 4V ~ 10V Applications: Wireless Power Receiver Current - Supply: 1.5A Supplier Device Package: 28-DSBGA Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ51020YFPR | Texas Instruments |
Description: IC WIRELESS PWR RCVR 42DSBGASupplier Device Package: 42-DSBGA Current - Supply: 2.5A Applications: Wireless Power Receiver Voltage - Supply: 4V ~ 10V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 42-XFBGA, DSBGA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ51051BYFPR | Texas Instruments |
Description: IC WIRELESS PWR RCVR 28DSBGAPart Status: Active Supplier Device Package: 28-DSBGA Current - Supply: 8mA Applications: Wireless Power Receiver Voltage - Supply: 4V ~ 10V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 28-XFBGA, DSBGA Packaging: Cut Tape (CT) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ7692000PWR | Texas Instruments |
Description: IC BATT MON MULTI 3-5C 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Cells: 3 ~ 5 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 20-TSSOP Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 3906 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ7692003PWR | Texas Instruments |
Description: IC BATT MON MULTI 3-5C 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Cells: 3 ~ 5 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 20-TSSOP Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 1820 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ7692006PWR | Texas Instruments |
Description: IC BATT MON MULTI 3-5C 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Cells: 3 ~ 5 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 20-TSSOP Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 3072 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ7693003DBTR | Texas Instruments |
Description: IC BATT MON MULTI 6-10C 30TSSOPPackaging: Cut Tape (CT) Package / Case: 30-TFSOP (0.173", 4.40mm Width) Number of Cells: 6 ~ 10 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 30-TSSOP Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 3939 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ7693006DBTR | Texas Instruments |
Description: IC BATT MON MULTI 6-10C 30TSSOPPackaging: Cut Tape (CT) Package / Case: 30-TFSOP (0.173", 4.40mm Width) Number of Cells: 6 ~ 10 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 30-TSSOP Fault Protection: Over Current, Over/Under Voltage, Short Circuit Part Status: Active |
auf Bestellung 7155 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ771600DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-4CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 4 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ771604DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-4CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 4 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2986 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ771611DPJR | Texas Instruments |
Description: IC BATT PROT 2-4CELL LIION 8WSON |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ771612DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-4CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 4 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ771800DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 5 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2790 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ771801DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 5 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ771803DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 5 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ771807DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSONPart Status: Active Fault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 5 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 7523 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ771808DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSONFault Protection: Over Voltage Supplier Device Package: 8-WSON (3x4) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 110°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 2 ~ 5 Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 17990 Stücke: Lieferzeit 10-14 Tag (e) |
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BQ771815DPJR | Texas Instruments |
Description: IC BATT PROT LI-ION 2-5CEL 8WSON |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 412 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BQ78350DBTR | Texas Instruments |
Description: IC BATT MON MULTI 3-15C 30TSSOPPackaging: Cut Tape (CT) Package / Case: 30-TFSOP (0.173", 4.40mm Width) Number of Cells: 3 ~ 15 Mounting Type: Surface Mount Function: Battery Monitor Interface: SMBus Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Multi-Chemistry Supplier Device Package: 30-TSSOP Fault Protection: Over Current, Over Temperature, Over/Under Voltage |
auf Bestellung 1634 Stücke: Lieferzeit 10-14 Tag (e) |
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CC1100ERGPR | Texas Instruments |
Description: IC RF TXRX ISM<1GHZ 20QFNSerial Interfaces: SPI RF Family/Standard: General ISM < 1GHz Modulation: 2FSK, ASK, GFSK, MSK, OOK Supplier Device Package: 20-QFN (4x4) Current - Transmitting: 15.8mA ~ 30.9mA Data Rate (Max): 500kBaud Current - Receiving: 15.4mA ~ 20mA Power - Output: 10dBm Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx Only DigiKey Programmable: Not Verified Frequency: 470MHz ~ 510MHz, 950MHz ~ 960MHz Mounting Type: Surface Mount Sensitivity: -112dBm Package / Case: 20-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CC1201RHBR | Texas Instruments |
Description: IC RF TXRX+MCU ISM<1GHZ 32VQFNModulation: 2FSK, 2GFSK, 4FSK, 4GFSK, MSK, OOK GPIO: 4 Supplier Device Package: 32-VQFN (5x5) Current - Transmitting: 33.6mA ~ 54mA Data Rate (Max): 1.25Mbps Current - Receiving: 19mA ~ 23.6mA Power - Output: 16dBm Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx + MCU Memory Size: 4kB ROM, 256B RAM Frequency: 164MHz ~ 190MHz, 410MHz ~ 475MHz, 820MHz ~ 950MHz Mounting Type: Surface Mount Sensitivity: -120dBm Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: SPI RF Family/Standard: General ISM < 1GHz |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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CC2538NF53RTQR | Texas Instruments |
Description: IC RF TXRX+MCU 802.15.4 56QFNDigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: I2C, JTAG, SPI, UART, USB RF Family/Standard: 802.15.4 GPIO: 32 Supplier Device Package: 56-QFN (8x8) Current - Transmitting: 24mA ~ 34mA Data Rate (Max): 250kbps Current - Receiving: 20mA ~ 24mA Protocol: 6LoWPAN, Zigbee® Power - Output: 7dbm Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: TxRx + MCU Memory Size: 512kB Flash, 32kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -97dBm Package / Case: 56-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 12625 Stücke: Lieferzeit 10-14 Tag (e) |
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CC2540TF256RHAR | Texas Instruments |
Description: IC RF TXRX+MCU BLE 40VQFNPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 8kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Power - Output: 4dBm Protocol: Bluetooth v4.0 Current - Receiving: 19.6mA ~ 22.1mA Data Rate (Max): 1Mbps Current - Transmitting: 21.1mA ~ 31.6mA Supplier Device Package: 40-VQFN (6x6) GPIO: 21 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: SPI, USART, USB Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 9846 Stücke: Lieferzeit 10-14 Tag (e) |
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CC2544RHBR | Texas Instruments |
Description: IC RF TXRX+MCU ISM>1GHZ 32VFQFNPart Status: Active Serial Interfaces: SPI, USART, USB RF Family/Standard: General ISM > 1GHz Modulation: GFSK, MSK GPIO: 8 Supplier Device Package: 32-VQFN (5x5) Current - Transmitting: 27mA ~ 30mA Data Rate (Max): 2Mbps Current - Receiving: 22.5mA Power - Output: 4dBm Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx + MCU DigiKey Programmable: Not Verified Memory Size: 32kB Flash, 2kB SRAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -96dBm Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CC2560ARVMR | Texas Instruments |
Description: IC RF TXRX BLE 76VQFNPackaging: Cut Tape (CT) Package / Case: 76-VQFN Dual Rows, Exposed Pad Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx Only Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.2V ~ 4.8V Power - Output: 12dBm Protocol: Bluetooth v4.0 Current - Receiving: 40.5mA ~ 41.2mA Data Rate (Max): 4Mbps Current - Transmitting: 40.5mA ~ 41.2mA Supplier Device Package: 76-VQFNP-MR (8x8) Modulation: GFSK, GMSK RF Family/Standard: Bluetooth Serial Interfaces: I2S, UART DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CC3100R11MRGCR | Texas Instruments |
Description: IC RF TXRX+MCU WIFI 64VQFNPart Status: Active Serial Interfaces: SPI, UART RF Family/Standard: WiFi Modulation: CCK, DSSS, OFDM Supplier Device Package: 64-VQFN (9x9) Current - Transmitting: 160mA ~ 272mA Data Rate (Max): 16Mbps Current - Receiving: 53mA Protocol: 802.11b/g/n Power - Output: 18.3dBm Voltage - Supply: 2.1V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -95.7dBm Package / Case: 64-VFQFN Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 6278 Stücke: Lieferzeit 10-14 Tag (e) |
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CC8530RHAR | Texas Instruments |
Description: IC RF TXRX+MCU ISM>1GHZ 40VFQFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CDCE913QPWRQ1 | Texas Instruments |
Description: IC SS CLOCK DRIVER 14TSSOPPackaging: Cut Tape (CT) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Number of Circuits: 1 Grade: Automotive Divider/Multiplier: Yes/Yes PLL: Yes with Bypass Supplier Device Package: 14-TSSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:3 Voltage - Supply: 1.7V ~ 1.9V, 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C Input: LVCMOS, Crystal Type: Spread Spectrum Clock Driver Frequency - Max: 230MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) |
auf Bestellung 1926 Stücke: Lieferzeit 10-14 Tag (e) |
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CDCUN1208LPRHBR | Texas Instruments |
Description: IC CLK BUFFER 2:8 400MHZ 32VQFNFrequency - Max: 400 MHz Part Status: Active Supplier Device Package: 32-VQFN (5x5) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 2:8 Voltage - Supply: 1.7V ~ 3.63V Operating Temperature: -40°C ~ 85°C Input: HCSL, LVCMOS, LVDS Type: Fanout Buffer (Distribution), Divider, Multiplexer Output: HCSL, LVCMOS, LVDS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1579 Stücke: Lieferzeit 10-14 Tag (e) |
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CLVC16T245MDGGREP | Texas Instruments |
Description: IC TRANSLATION TXRX 1.65VPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Translation Transceiver Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 48-TSSOP |
auf Bestellung 4279 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13303W1015 | Texas Instruments |
Description: MOSFET N-CH 12V 31A 6DSBGAPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.65W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V |
auf Bestellung 2460 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13383F4 | Texas Instruments |
Description: MOSFET N-CH 12V 2.9A 3PICOSTARPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V |
auf Bestellung 978802 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD15571Q2 | Texas Instruments |
Description: MOSFET N-CH 20V 22A 6SONPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 6-SON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V |
auf Bestellung 1439 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17570Q5B | Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V |
auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17575Q3 | Texas Instruments |
Description: MOSFET N-CH 30V 60A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 2.8W (Ta), 108W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSD17577Q3A | Texas Instruments |
Description: MOSFET N-CH 30V 35A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 10021 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 60A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 9902 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17578Q3A | Texas Instruments |
Description: MOSFET N-CH 30V 20A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V |
auf Bestellung 3488 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17579Q3A | Texas Instruments |
Description: MOSFET N-CH 30V 20A 8VSONVgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSD22202W15 | Texas Instruments |
Description: MOSFET P-CH 8V 10A 9DSBGAPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
auf Bestellung 52180 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23202W10 | Texas Instruments |
Description: MOSFET P-CH 12V 2.2A 4DSBGAPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V |
auf Bestellung 4443 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23203W | Texas Instruments |
Description: MOSFET P-CH 8V 3A 6DSBGAPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V |
auf Bestellung 1908 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23381F4 | Texas Instruments |
Description: MOSFET P-CH 12V 2.3A 3PICOSTARPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V |
auf Bestellung 235648 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4 | Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTARPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR (1x0.60) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
auf Bestellung 181373 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25213W10 | Texas Instruments |
Description: MOSFET P-CH 20V 1.6A 4DSBGAPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V |
auf Bestellung 7931 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25304W1015 | Texas Instruments |
Description: MOSFET P-CH 20V 3A 6DSBGAPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V |
auf Bestellung 2664 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25481F4 | Texas Instruments |
Description: MOSFET P-CH 20V 2.5A 3PICOSTARPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR (1x0.60) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.913 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 189 pF @ 10 V |
auf Bestellung 121452 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD43301Q5M | Texas Instruments |
Description: IC PWR DRIVER N-CHAN 1:1 12LSON |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSD75207W15 | Texas Instruments |
Description: MOSFET 2P-CH 3.9A 9DSBGAPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD83325L | Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPackaging: Cut Tape (CT) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD85301Q2 | Texas Instruments |
Description: MOSFET 2N-CH 20V 5A 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87381P | Texas Instruments |
Description: MOSFET 2N-CH 30V 15A 5PTABPackaging: Cut Tape (CT) Package / Case: 5-LGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 8A, 8V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 5-PTAB (3x2.5) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BQ29705DSER |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 29+ | 0.74 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.57 EUR |
| 250+ | 0.54 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.49 EUR |
| BQ29706DSER |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 10580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 29+ | 0.74 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.57 EUR |
| 250+ | 0.54 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.49 EUR |
| BQ29707DSER |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-WSON (1.5x1.5)
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 29+ | 0.74 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.57 EUR |
| BQ34Z100PWR-G1 |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI-CHEM 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: HDQ, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BATT MON MULTI-CHEM 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: HDQ, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.83 EUR |
| 10+ | 8.29 EUR |
| 25+ | 7.66 EUR |
| 100+ | 6.96 EUR |
| 250+ | 6.69 EUR |
| BQ500211RGZT |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR TX 48VQFN
Part Status: Not For New Designs
Supplier Device Package: 48-VQFN (7x7)
Current - Supply: 52mA
Applications: Wireless Power Transmitter
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC WIRELESS PWR TX 48VQFN
Part Status: Not For New Designs
Supplier Device Package: 48-VQFN (7x7)
Current - Supply: 52mA
Applications: Wireless Power Transmitter
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.98 EUR |
| 10+ | 16.47 EUR |
| 25+ | 15.6 EUR |
| BQ51003YFPR |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 28DSBGA
Description: IC WIRELESS PWR RCVR 28DSBGA
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 3.15 EUR |
| 25+ | 2.84 EUR |
| 100+ | 2.49 EUR |
| 250+ | 2.18 EUR |
| 500+ | 1.93 EUR |
| 1000+ | 1.62 EUR |
| BQ51010BYFPR |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 28DSBGA
Description: IC WIRELESS PWR RCVR 28DSBGA
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
| BQ51013ARHLT |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 10V
Applications: Wireless Power Receiver
Current - Supply: 1.5A
Supplier Device Package: 20-VQFN (3.5x4.5)
Part Status: Active
Description: IC WIRELESS PWR RCVR 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 10V
Applications: Wireless Power Receiver
Current - Supply: 1.5A
Supplier Device Package: 20-VQFN (3.5x4.5)
Part Status: Active
auf Bestellung 5171 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 9.42 EUR |
| 25+ | 8.92 EUR |
| 100+ | 8.22 EUR |
| BQ51013BYFPR |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 28DSBGA
Packaging: Cut Tape (CT)
Package / Case: 28-XFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 10V
Applications: Wireless Power Receiver
Current - Supply: 1.5A
Supplier Device Package: 28-DSBGA
Part Status: Active
Description: IC WIRELESS PWR RCVR 28DSBGA
Packaging: Cut Tape (CT)
Package / Case: 28-XFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 4V ~ 10V
Applications: Wireless Power Receiver
Current - Supply: 1.5A
Supplier Device Package: 28-DSBGA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ51020YFPR |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 42DSBGA
Supplier Device Package: 42-DSBGA
Current - Supply: 2.5A
Applications: Wireless Power Receiver
Voltage - Supply: 4V ~ 10V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 42-XFBGA, DSBGA
Packaging: Cut Tape (CT)
Description: IC WIRELESS PWR RCVR 42DSBGA
Supplier Device Package: 42-DSBGA
Current - Supply: 2.5A
Applications: Wireless Power Receiver
Voltage - Supply: 4V ~ 10V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 42-XFBGA, DSBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ51051BYFPR |
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Hersteller: Texas Instruments
Description: IC WIRELESS PWR RCVR 28DSBGA
Part Status: Active
Supplier Device Package: 28-DSBGA
Current - Supply: 8mA
Applications: Wireless Power Receiver
Voltage - Supply: 4V ~ 10V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-XFBGA, DSBGA
Packaging: Cut Tape (CT)
Description: IC WIRELESS PWR RCVR 28DSBGA
Part Status: Active
Supplier Device Package: 28-DSBGA
Current - Supply: 8mA
Applications: Wireless Power Receiver
Voltage - Supply: 4V ~ 10V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-XFBGA, DSBGA
Packaging: Cut Tape (CT)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| BQ7692000PWR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 3906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.53 EUR |
| 10+ | 4.91 EUR |
| 25+ | 4.51 EUR |
| 100+ | 4.07 EUR |
| 250+ | 3.86 EUR |
| 500+ | 3.82 EUR |
| BQ7692003PWR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 1820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.53 EUR |
| 10+ | 4.91 EUR |
| 25+ | 4.51 EUR |
| 100+ | 4.07 EUR |
| 250+ | 3.86 EUR |
| 500+ | 3.82 EUR |
| BQ7692006PWR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT MON MULTI 3-5C 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 3072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.53 EUR |
| 10+ | 4.91 EUR |
| 25+ | 4.51 EUR |
| 100+ | 4.07 EUR |
| 250+ | 3.86 EUR |
| 500+ | 3.82 EUR |
| BQ7693003DBTR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 6-10C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 6 ~ 10
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT MON MULTI 6-10C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 6 ~ 10
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 3939 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.32 EUR |
| 10+ | 7.1 EUR |
| 25+ | 6.54 EUR |
| 100+ | 5.94 EUR |
| 250+ | 5.68 EUR |
| BQ7693006DBTR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 6-10C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 6 ~ 10
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
Description: IC BATT MON MULTI 6-10C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 6 ~ 10
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Part Status: Active
auf Bestellung 7155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.79 EUR |
| 10+ | 6.69 EUR |
| 25+ | 6.18 EUR |
| 100+ | 5.59 EUR |
| 250+ | 5.32 EUR |
| 500+ | 5.15 EUR |
| 1000+ | 5.02 EUR |
| BQ771600DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| BQ771604DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.49 EUR |
| 10+ | 2.24 EUR |
| 25+ | 2.12 EUR |
| 100+ | 1.75 EUR |
| 250+ | 1.63 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.14 EUR |
| BQ771611DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT 2-4CELL LIION 8WSON
Description: IC BATT PROT 2-4CELL LIION 8WSON
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ771612DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-4CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 4
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ771800DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.42 EUR |
| 25+ | 2.3 EUR |
| 100+ | 1.88 EUR |
| 250+ | 1.76 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.23 EUR |
| BQ771801DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ771803DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BQ771807DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7523 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.49 EUR |
| 10+ | 2.24 EUR |
| 25+ | 2.13 EUR |
| 100+ | 1.75 EUR |
| 250+ | 1.63 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.14 EUR |
| BQ771808DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Fault Protection: Over Voltage
Supplier Device Package: 8-WSON (3x4)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 110°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 2 ~ 5
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 17990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.49 EUR |
| 12+ | 1.81 EUR |
| 25+ | 1.63 EUR |
| 100+ | 1.44 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.26 EUR |
| BQ771815DPJR |
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Hersteller: Texas Instruments
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Description: IC BATT PROT LI-ION 2-5CEL 8WSON
Produkt ist nicht verfügbar
Mindestbestellmenge: 412 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BQ78350DBTR |
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Hersteller: Texas Instruments
Description: IC BATT MON MULTI 3-15C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 15
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: SMBus
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over Temperature, Over/Under Voltage
Description: IC BATT MON MULTI 3-15C 30TSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-TFSOP (0.173", 4.40mm Width)
Number of Cells: 3 ~ 15
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: SMBus
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 30-TSSOP
Fault Protection: Over Current, Over Temperature, Over/Under Voltage
auf Bestellung 1634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.86 EUR |
| 10+ | 9.91 EUR |
| 25+ | 9.17 EUR |
| 100+ | 8.38 EUR |
| 250+ | 8 EUR |
| 500+ | 7.76 EUR |
| 1000+ | 7.57 EUR |
| CC1100ERGPR |
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Hersteller: Texas Instruments
Description: IC RF TXRX ISM<1GHZ 20QFN
Serial Interfaces: SPI
RF Family/Standard: General ISM < 1GHz
Modulation: 2FSK, ASK, GFSK, MSK, OOK
Supplier Device Package: 20-QFN (4x4)
Current - Transmitting: 15.8mA ~ 30.9mA
Data Rate (Max): 500kBaud
Current - Receiving: 15.4mA ~ 20mA
Power - Output: 10dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
DigiKey Programmable: Not Verified
Frequency: 470MHz ~ 510MHz, 950MHz ~ 960MHz
Mounting Type: Surface Mount
Sensitivity: -112dBm
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC RF TXRX ISM<1GHZ 20QFN
Serial Interfaces: SPI
RF Family/Standard: General ISM < 1GHz
Modulation: 2FSK, ASK, GFSK, MSK, OOK
Supplier Device Package: 20-QFN (4x4)
Current - Transmitting: 15.8mA ~ 30.9mA
Data Rate (Max): 500kBaud
Current - Receiving: 15.4mA ~ 20mA
Power - Output: 10dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
DigiKey Programmable: Not Verified
Frequency: 470MHz ~ 510MHz, 950MHz ~ 960MHz
Mounting Type: Surface Mount
Sensitivity: -112dBm
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CC1201RHBR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU ISM<1GHZ 32VQFN
Modulation: 2FSK, 2GFSK, 4FSK, 4GFSK, MSK, OOK
GPIO: 4
Supplier Device Package: 32-VQFN (5x5)
Current - Transmitting: 33.6mA ~ 54mA
Data Rate (Max): 1.25Mbps
Current - Receiving: 19mA ~ 23.6mA
Power - Output: 16dBm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Memory Size: 4kB ROM, 256B RAM
Frequency: 164MHz ~ 190MHz, 410MHz ~ 475MHz, 820MHz ~ 950MHz
Mounting Type: Surface Mount
Sensitivity: -120dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM < 1GHz
Description: IC RF TXRX+MCU ISM<1GHZ 32VQFN
Modulation: 2FSK, 2GFSK, 4FSK, 4GFSK, MSK, OOK
GPIO: 4
Supplier Device Package: 32-VQFN (5x5)
Current - Transmitting: 33.6mA ~ 54mA
Data Rate (Max): 1.25Mbps
Current - Receiving: 19mA ~ 23.6mA
Power - Output: 16dBm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Memory Size: 4kB ROM, 256B RAM
Frequency: 164MHz ~ 190MHz, 410MHz ~ 475MHz, 820MHz ~ 950MHz
Mounting Type: Surface Mount
Sensitivity: -120dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM < 1GHz
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.33 EUR |
| CC2538NF53RTQR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU 802.15.4 56QFN
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, JTAG, SPI, UART, USB
RF Family/Standard: 802.15.4
GPIO: 32
Supplier Device Package: 56-QFN (8x8)
Current - Transmitting: 24mA ~ 34mA
Data Rate (Max): 250kbps
Current - Receiving: 20mA ~ 24mA
Protocol: 6LoWPAN, Zigbee®
Power - Output: 7dbm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: TxRx + MCU
Memory Size: 512kB Flash, 32kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -97dBm
Package / Case: 56-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC RF TXRX+MCU 802.15.4 56QFN
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, JTAG, SPI, UART, USB
RF Family/Standard: 802.15.4
GPIO: 32
Supplier Device Package: 56-QFN (8x8)
Current - Transmitting: 24mA ~ 34mA
Data Rate (Max): 250kbps
Current - Receiving: 20mA ~ 24mA
Protocol: 6LoWPAN, Zigbee®
Power - Output: 7dbm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: TxRx + MCU
Memory Size: 512kB Flash, 32kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -97dBm
Package / Case: 56-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 12625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.19 EUR |
| 10+ | 21.92 EUR |
| 25+ | 20.78 EUR |
| 100+ | 19.22 EUR |
| 250+ | 18.28 EUR |
| 500+ | 17.61 EUR |
| 1000+ | 17.24 EUR |
| CC2540TF256RHAR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU BLE 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 19.6mA ~ 22.1mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21.1mA ~ 31.6mA
Supplier Device Package: 40-VQFN (6x6)
GPIO: 21
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, USART, USB
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 19.6mA ~ 22.1mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21.1mA ~ 31.6mA
Supplier Device Package: 40-VQFN (6x6)
GPIO: 21
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, USART, USB
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.07 EUR |
| 10+ | 11.33 EUR |
| 25+ | 10.72 EUR |
| 100+ | 9.89 EUR |
| 250+ | 9.39 EUR |
| 500+ | 9.04 EUR |
| 1000+ | 8.71 EUR |
| CC2544RHBR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU ISM>1GHZ 32VFQFN
Part Status: Active
Serial Interfaces: SPI, USART, USB
RF Family/Standard: General ISM > 1GHz
Modulation: GFSK, MSK
GPIO: 8
Supplier Device Package: 32-VQFN (5x5)
Current - Transmitting: 27mA ~ 30mA
Data Rate (Max): 2Mbps
Current - Receiving: 22.5mA
Power - Output: 4dBm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
DigiKey Programmable: Not Verified
Memory Size: 32kB Flash, 2kB SRAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC RF TXRX+MCU ISM>1GHZ 32VFQFN
Part Status: Active
Serial Interfaces: SPI, USART, USB
RF Family/Standard: General ISM > 1GHz
Modulation: GFSK, MSK
GPIO: 8
Supplier Device Package: 32-VQFN (5x5)
Current - Transmitting: 27mA ~ 30mA
Data Rate (Max): 2Mbps
Current - Receiving: 22.5mA
Power - Output: 4dBm
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
DigiKey Programmable: Not Verified
Memory Size: 32kB Flash, 2kB SRAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CC2560ARVMR |
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Hersteller: Texas Instruments
Description: IC RF TXRX BLE 76VQFN
Packaging: Cut Tape (CT)
Package / Case: 76-VQFN Dual Rows, Exposed Pad
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 4.8V
Power - Output: 12dBm
Protocol: Bluetooth v4.0
Current - Receiving: 40.5mA ~ 41.2mA
Data Rate (Max): 4Mbps
Current - Transmitting: 40.5mA ~ 41.2mA
Supplier Device Package: 76-VQFNP-MR (8x8)
Modulation: GFSK, GMSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLE 76VQFN
Packaging: Cut Tape (CT)
Package / Case: 76-VQFN Dual Rows, Exposed Pad
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 4.8V
Power - Output: 12dBm
Protocol: Bluetooth v4.0
Current - Receiving: 40.5mA ~ 41.2mA
Data Rate (Max): 4Mbps
Current - Transmitting: 40.5mA ~ 41.2mA
Supplier Device Package: 76-VQFNP-MR (8x8)
Modulation: GFSK, GMSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, UART
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| CC3100R11MRGCR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU WIFI 64VQFN
Part Status: Active
Serial Interfaces: SPI, UART
RF Family/Standard: WiFi
Modulation: CCK, DSSS, OFDM
Supplier Device Package: 64-VQFN (9x9)
Current - Transmitting: 160mA ~ 272mA
Data Rate (Max): 16Mbps
Current - Receiving: 53mA
Protocol: 802.11b/g/n
Power - Output: 18.3dBm
Voltage - Supply: 2.1V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95.7dBm
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU WIFI 64VQFN
Part Status: Active
Serial Interfaces: SPI, UART
RF Family/Standard: WiFi
Modulation: CCK, DSSS, OFDM
Supplier Device Package: 64-VQFN (9x9)
Current - Transmitting: 160mA ~ 272mA
Data Rate (Max): 16Mbps
Current - Receiving: 53mA
Protocol: 802.11b/g/n
Power - Output: 18.3dBm
Voltage - Supply: 2.1V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -95.7dBm
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 6278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.21 EUR |
| 10+ | 15.61 EUR |
| 25+ | 14.26 EUR |
| 100+ | 12.61 EUR |
| 250+ | 11.75 EUR |
| 500+ | 11.19 EUR |
| 1000+ | 10.7 EUR |
| CC8530RHAR |
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Hersteller: Texas Instruments
Description: IC RF TXRX+MCU ISM>1GHZ 40VFQFN
Description: IC RF TXRX+MCU ISM>1GHZ 40VFQFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDCE913QPWRQ1 |
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Hersteller: Texas Instruments
Description: IC SS CLOCK DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of Circuits: 1
Grade: Automotive
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 14-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 1.7V ~ 1.9V, 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Input: LVCMOS, Crystal
Type: Spread Spectrum Clock Driver
Frequency - Max: 230MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Description: IC SS CLOCK DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of Circuits: 1
Grade: Automotive
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 14-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 1.7V ~ 1.9V, 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Input: LVCMOS, Crystal
Type: Spread Spectrum Clock Driver
Frequency - Max: 230MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
auf Bestellung 1926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.85 EUR |
| 10+ | 8.32 EUR |
| 25+ | 7.69 EUR |
| 100+ | 7 EUR |
| 250+ | 6.66 EUR |
| 500+ | 6.46 EUR |
| 1000+ | 6.3 EUR |
| CDCUN1208LPRHBR |
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Hersteller: Texas Instruments
Description: IC CLK BUFFER 2:8 400MHZ 32VQFN
Frequency - Max: 400 MHz
Part Status: Active
Supplier Device Package: 32-VQFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:8
Voltage - Supply: 1.7V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Input: HCSL, LVCMOS, LVDS
Type: Fanout Buffer (Distribution), Divider, Multiplexer
Output: HCSL, LVCMOS, LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 2:8 400MHZ 32VQFN
Frequency - Max: 400 MHz
Part Status: Active
Supplier Device Package: 32-VQFN (5x5)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 2:8
Voltage - Supply: 1.7V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Input: HCSL, LVCMOS, LVDS
Type: Fanout Buffer (Distribution), Divider, Multiplexer
Output: HCSL, LVCMOS, LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.29 EUR |
| 10+ | 15.86 EUR |
| 25+ | 14.76 EUR |
| 100+ | 13.53 EUR |
| 250+ | 12.95 EUR |
| 500+ | 12.6 EUR |
| 1000+ | 12.32 EUR |
| CLVC16T245MDGGREP |
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Hersteller: Texas Instruments
Description: IC TRANSLATION TXRX 1.65V
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 48-TSSOP
Description: IC TRANSLATION TXRX 1.65V
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 48-TSSOP
auf Bestellung 4279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.38 EUR |
| 10+ | 31.54 EUR |
| 25+ | 29.57 EUR |
| 100+ | 27.42 EUR |
| 250+ | 26.38 EUR |
| 500+ | 25.76 EUR |
| CSD13303W1015 |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 31A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
Description: MOSFET N-CH 12V 31A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.82 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| CSD13383F4 |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V
auf Bestellung 978802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 36+ | 0.6 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| CSD15571Q2 |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 20V 22A 6SON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 6-SON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Description: MOSFET N-CH 20V 22A 6SON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 6-SON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.11 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| CSD17570Q5B |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.95 EUR |
| CSD17575Q3 |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD17577Q3A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 35A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 20+ | 1.08 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| CSD17577Q5A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
auf Bestellung 9902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| CSD17578Q3A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
Description: MOSFET N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
auf Bestellung 3488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.48 EUR |
| CSD17579Q3A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Description: MOSFET N-CH 30V 20A 8VSON
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD22202W15 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 8V 10A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
Description: MOSFET P-CH 8V 10A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
auf Bestellung 52180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| CSD23202W10 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 2.2A 4DSBGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V
Description: MOSFET P-CH 12V 2.2A 4DSBGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V
auf Bestellung 4443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 29+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| CSD23203W |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
Description: MOSFET P-CH 8V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| CSD23381F4 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 2.3A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V
Description: MOSFET P-CH 12V 2.3A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V
auf Bestellung 235648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 52+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| CSD23382F4 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR (1x0.60)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR (1x0.60)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
auf Bestellung 181373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| CSD25213W10 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 1.6A 4DSBGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
Description: MOSFET P-CH 20V 1.6A 4DSBGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
auf Bestellung 7931 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| CSD25304W1015 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
Description: MOSFET P-CH 20V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
auf Bestellung 2664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| CSD25481F4 |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR (1x0.60)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.913 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 189 pF @ 10 V
Description: MOSFET P-CH 20V 2.5A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR (1x0.60)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.913 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 189 pF @ 10 V
auf Bestellung 121452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| CSD43301Q5M |
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Hersteller: Texas Instruments
Description: IC PWR DRIVER N-CHAN 1:1 12LSON
Description: IC PWR DRIVER N-CHAN 1:1 12LSON
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD75207W15 |
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Hersteller: Texas Instruments
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 17+ | 1.27 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| CSD83325L |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 36+ | 0.58 EUR |
| 41+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.38 EUR |
| CSD85301Q2 |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 20V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.56 EUR |
| CSD87381P |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 15A 5PTAB
Packaging: Cut Tape (CT)
Package / Case: 5-LGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 8A, 8V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 5-PTAB (3x2.5)
Part Status: Active
Description: MOSFET 2N-CH 30V 15A 5PTAB
Packaging: Cut Tape (CT)
Package / Case: 5-LGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 8A, 8V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 5-PTAB (3x2.5)
Part Status: Active
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