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V40D120C-M3/I V40D120C-M3/I Vishay General Semiconductor - Diodes Division v40d120c.pdf Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V60D120C-M3/I V60D120C-M3/I Vishay General Semiconductor - Diodes Division v60d120c.pdf Description: DIODE ARRAY SCHOTT 120V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V20DM120C-M3/I V20DM120C-M3/I Vishay General Semiconductor - Diodes Division v20dm120c.pdf Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
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V30DM120C-M3/I V30DM120C-M3/I Vishay General Semiconductor - Diodes Division v30dm120c.pdf Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V40DM120C-M3/I V40DM120C-M3/I Vishay General Semiconductor - Diodes Division v40dm120c.pdf Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMC3K75CA-M3/57 SMC3K75CA-M3/57 Vishay General Semiconductor - Diodes Division smc3k22ca.pdf Description: TVS DIODE 75VWM 121VC DO214AB
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 24.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Produkt ist nicht verfügbar
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V15PN50-M3/86A V15PN50-M3/86A Vishay General Semiconductor - Diodes Division v15pn50-m3.pdf Description: DIODE SCHOTTKY 50V 15A TO277A
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12+1.77 EUR
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V10PN50-M3/86A V10PN50-M3/86A Vishay General Semiconductor - Diodes Division v10pn50-m3.pdf Description: DIODE SCHOTTKY 50V 10A TO277A
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V30DL50C-M3/I V30DL50C-M3/I Vishay General Semiconductor - Diodes Division v30dl50c.pdf Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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10+2.8 EUR
100+2.23 EUR
500+1.88 EUR
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V10D60C-M3/I V10D60C-M3/I Vishay General Semiconductor - Diodes Division v10d60c.pdf Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
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V30D60C-M3/I V30D60C-M3/I Vishay General Semiconductor - Diodes Division v30d60c.pdf Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
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V10D100C-M3/I V10D100C-M3/I Vishay General Semiconductor - Diodes Division v10d100c.pdf Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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V40D100C-M3/I V40D100C-M3/I Vishay General Semiconductor - Diodes Division v40d100c.pdf Description: DIODE ARR SCHOTT 100V 20A SMPD
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V60D100C-M3/I V60D100C-M3/I Vishay General Semiconductor - Diodes Division v60d100c.pdf Description: DIODE ARRAY SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
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10+4.28 EUR
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V10D120C-M3/I V10D120C-M3/I Vishay General Semiconductor - Diodes Division v10d120c.pdf Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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V60D120C-M3/I V60D120C-M3/I Vishay General Semiconductor - Diodes Division v60d120c.pdf Description: DIODE ARRAY SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V20DM120C-M3/I V20DM120C-M3/I Vishay General Semiconductor - Diodes Division v20dm120c.pdf Description: DIODE ARR SCHOTT 120V 10A SMPD
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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V30DM120C-M3/I V30DM120C-M3/I Vishay General Semiconductor - Diodes Division v30dm120c.pdf Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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500+2.49 EUR
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V40DM120C-M3/I V40DM120C-M3/I Vishay General Semiconductor - Diodes Division v40dm120c.pdf Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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G3SBA20-M3/45 G3SBA20-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20-M3/51 G3SBA20-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/45 G3SBA20L-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA20L-M3/51 G3SBA20L-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
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G3SBA60-M3/45 G3SBA60-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60-M3/51 G3SBA60-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/45 G3SBA60L-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G3SBA60L-M3/51 G3SBA60L-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G3SBA80-M3/45 G3SBA80-M3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G3SBA80-M3/51 G3SBA80-M3/51 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
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G5SBA20-M3/45 G5SBA20-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20-M3/51 G5SBA20-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA20L-M3/45 G5SBA20L-M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
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G5SBA60-M3/45 G5SBA60-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA60-M3/51 G5SBA60-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G5SBA60L-M3/45 G5SBA60L-M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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G5SBA80-M3/45 G5SBA80-M3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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G5SBA80-M3/51 G5SBA80-M3/51 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
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GBU4A-M3/45 GBU4A-M3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU4A-M3/51 GBU4A-M3/51 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU8A-M3/45 GBU8A-M3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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GBU8A-M3/51 GBU8A-M3/51 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
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1N6303A-E3/54 1N6303A-E3/54 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 171VWM 274VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
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100+1.11 EUR
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1N6384-E3/54 1N6384-E3/54 Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 12VWM 17.1VC 1.5KE
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1N4148WSFL-G3-08 1N4148WSFL-G3-08 Vishay General Semiconductor - Diodes Division 1N4148WSFL-G.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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TPSMP13AHM3/84A TPSMP13AHM3/84A Vishay General Semiconductor - Diodes Division TPSMP6.8_TPSMP43A_July22_2016.pdf Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PBHM3/84A ESH1PBHM3/84A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH1PBHM3/85A ESH1PBHM3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH1PB-M3/85A ESH1PB-M3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 100V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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ESH1PCHM3/84A ESH1PCHM3/84A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 150V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH1PCHM3/85A ESH1PCHM3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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ESH1PC-M3/85A ESH1PC-M3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH1PDHM3/85A ESH1PDHM3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Produkt ist nicht verfügbar
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ESH1PD-M3/85A ESH1PD-M3/85A Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PBHM3/85A ESH2PBHM3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PB-M3/85A ESH2PB-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH2PCHM3/85A ESH2PCHM3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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ESH2PC-M3/85A ESH2PC-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PD-M3/85A ESH2PD-M3/85A Vishay General Semiconductor - Diodes Division esh2pb.pdf Description: DIODE GEN PURP 200V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTV12B-M3/84A PTV12B-M3/84A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
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PTV12B-M3/85A PTV12B-M3/85A Vishay General Semiconductor - Diodes Division ptvxxb.pdf Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V40D120C-M3/I v40d120c.pdf
V40D120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V60D120C-M3/I v60d120c.pdf
V60D120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V20DM120C-M3/I v20dm120c.pdf
V20DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Produkt ist nicht verfügbar
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V30DM120C-M3/I v30dm120c.pdf
V30DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V40DM120C-M3/I v40dm120c.pdf
V40DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMC3K75CA-M3/57 smc3k22ca.pdf
SMC3K75CA-M3/57
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 121VC DO214AB
Voltage - Reverse Standoff (Typ): 75V
Current - Peak Pulse (10/1000µs): 24.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
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V15PN50-M3/86A v15pn50-m3.pdf
V15PN50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 15A TO277A
auf Bestellung 21617 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
12+1.77 EUR
100+1.38 EUR
500+1.14 EUR
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V10PN50-M3/86A v10pn50-m3.pdf
V10PN50-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 10A TO277A
Produkt ist nicht verfügbar
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V30DL50C-M3/I v30dl50c.pdf
V30DL50C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 50V 15A SMPD
Current - Reverse Leakage @ Vr: 1.8 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
auf Bestellung 2337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
10+2.8 EUR
100+2.23 EUR
500+1.88 EUR
1000+1.59 EUR
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V10D60C-M3/I v10d60c.pdf
V10D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 5A SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Produkt ist nicht verfügbar
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V30D60C-M3/I v30d60c.pdf
V30D60C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 60V 15A SMPD
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.72 EUR
10+4.38 EUR
100+3.05 EUR
500+2.48 EUR
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V10D100C-M3/I v10d100c.pdf
V10D100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 5A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V40D100C-M3/I v40d100c.pdf
V40D100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 20A SMPD
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V60D100C-M3/I v60d100c.pdf
V60D100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 120 V
auf Bestellung 12350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.58 EUR
10+4.28 EUR
100+2.98 EUR
500+2.42 EUR
1000+2.36 EUR
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V10D120C-M3/I v10d120c.pdf
V10D120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 5A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V60D120C-M3/I v60d120c.pdf
V60D120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 30 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
auf Bestellung 4275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.26 EUR
10+6.83 EUR
100+4.89 EUR
500+4.06 EUR
1000+3.8 EUR
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V20DM120C-M3/I v20dm120c.pdf
V20DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V30DM120C-M3/I v30dm120c.pdf
V30DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.7 EUR
10+4.38 EUR
100+3.05 EUR
500+2.49 EUR
1000+2.45 EUR
Mindestbestellmenge: 4 Stücke
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V40DM120C-M3/I v40dm120c.pdf
V40DM120C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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G3SBA20-M3/45 g3sba20.pdf
G3SBA20-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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G3SBA20-M3/51 g3sba20.pdf
G3SBA20-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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G3SBA20L-M3/45 g3sba20.pdf
G3SBA20L-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
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G3SBA20L-M3/51 g3sba20.pdf
G3SBA20L-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
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G3SBA60-M3/45 g3sba20.pdf
G3SBA60-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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G3SBA60-M3/51 g3sba20.pdf
G3SBA60-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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G3SBA60L-M3/45 g3sba20.pdf
G3SBA60L-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3SBA60L-M3/51 g3sba20.pdf
G3SBA60L-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G3SBA80-M3/45 g3sba20.pdf
G3SBA80-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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G3SBA80-M3/51 g3sba20.pdf
G3SBA80-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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G5SBA20-M3/45 g5sba20.pdf
G5SBA20-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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G5SBA20-M3/51 g5sba20.pdf
G5SBA20-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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G5SBA20L-M3/45
G5SBA20L-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G5SBA60-M3/45 g5sba20.pdf
G5SBA60-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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G5SBA60-M3/51 g5sba20.pdf
G5SBA60-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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G5SBA60L-M3/45
G5SBA60L-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G5SBA80-M3/45 g5sba20.pdf
G5SBA80-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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G5SBA80-M3/51 g5sba20.pdf
G5SBA80-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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GBU4A-M3/45 gbu4a.pdf
GBU4A-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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GBU4A-M3/51 gbu4a.pdf
GBU4A-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GBU8A-M3/45 gbu8a.pdf
GBU8A-M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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GBU8A-M3/51 gbu8a.pdf
GBU8A-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1N6303A-E3/54 15ke.pdf
1N6303A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2474 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
13+1.67 EUR
50+1.25 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 8 Stücke
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1N6384-E3/54 icte.pdf
1N6384-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 17.1VC 1.5KE
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
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1N4148WSFL-G3-08 1N4148WSFL-G.pdf
1N4148WSFL-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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TPSMP13AHM3/84A TPSMP6.8_TPSMP43A_July22_2016.pdf
TPSMP13AHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PBHM3/84A esh1pb.pdf
ESH1PBHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PBHM3/85A esh1pb.pdf
ESH1PBHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PB-M3/85A esh1pb.pdf
ESH1PB-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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ESH1PCHM3/84A esh1pb.pdf
ESH1PCHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PCHM3/85A esh1pb.pdf
ESH1PCHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESH1PC-M3/85A esh1pb.pdf
ESH1PC-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH1PDHM3/85A esh1pb.pdf
ESH1PDHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Produkt ist nicht verfügbar
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ESH1PD-M3/85A esh1pb.pdf
ESH1PD-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PBHM3/85A esh2pb.pdf
ESH2PBHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PB-M3/85A esh2pb.pdf
ESH2PB-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PCHM3/85A esh2pb.pdf
ESH2PCHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PC-M3/85A esh2pb.pdf
ESH2PC-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2PD-M3/85A esh2pb.pdf
ESH2PD-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTV12B-M3/84A ptvxxb.pdf
PTV12B-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTV12B-M3/85A ptvxxb.pdf
PTV12B-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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