Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41162) > Seite 201 nach 687
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V20DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARR SCHOTT 120V 10A SMPDCurrent - Reverse Leakage @ Vr: 600 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SMPD Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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V30DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 120V 15A SMPD Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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V40DM120C-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 120V 20A SMPD Current - Reverse Leakage @ Vr: 500 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SMPD Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA20-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA20-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA20L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA20L-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA60-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA60L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA60L-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA80-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G3SBA80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA20-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA20-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA20L-M3/45 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 2.8A GBU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA60-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA60-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA60L-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA80-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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G5SBA80-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU4A-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU4A-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3A GBU Packaging: Tray Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8A-M3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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GBU8A-M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1N6303A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 171VWM 274VC 1.5KE Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 274V Voltage - Breakdown (Min): 190V Unidirectional Channels: 1 Supplier Device Package: 1.5KE Voltage - Reverse Standoff (Typ): 171V Current - Peak Pulse (10/1000µs): 5.5A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Cut Tape (CT) |
auf Bestellung 4992 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6384-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 17.1VC 1.5KE |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1N4148WFL-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 75V 150MA SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123FL Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1N4148WSFL-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 75V 150MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TPSMP13AHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 11.1VWM 18.2VC DO220AA Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 18.2V Voltage - Breakdown (Min): 12.4V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 11.1V Current - Peak Pulse (10/1000µs): 22A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PBHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO220AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PBHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO220AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PB-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO220AA Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PCHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO220AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PCHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PC-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PDHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO220AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH1PD-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
~~2.jpg "ESH2PBHM3/85A") |
ESH2PBHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH2PB-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH2PCHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH2PC-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ESH2PD-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO220AA Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV12B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12.8V 600MW DO220AA Current - Reverse Leakage @ Vr: 10 µA @ 9 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 12.8 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
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PTV12B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12.8V 600MW DO220AA Current - Reverse Leakage @ Vr: 10 µA @ 9 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 12.8 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV16B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 17.3V 600MW DO220AA Current - Reverse Leakage @ Vr: 10 µA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 12 Ohms Voltage - Zener (Nom) (Vz): 17.3 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV18B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 19.2V 600MW DO220AA Current - Reverse Leakage @ Vr: 10 µA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 12 Ohms Voltage - Zener (Nom) (Vz): 19.2 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV18B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 19.2V 600MW DO220AA Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 12 Ohms Voltage - Zener (Nom) (Vz): 19.2 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV7.5B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8V 600MW DO220AA Current - Reverse Leakage @ Vr: 20 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 8 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV8.2B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.8V 600MW DO220AA Current - Reverse Leakage @ Vr: 20 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 8.8 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV8.2B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.8V 600MW DO220AA Current - Reverse Leakage @ Vr: 20 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 4 Ohms Voltage - Zener (Nom) (Vz): 8.8 V Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV9.1B-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.7V 600MW DO220AA Current - Reverse Leakage @ Vr: 20 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Part Status: Active Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 9.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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PTV9.1B-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.7V 600MW DO220AA Current - Reverse Leakage @ Vr: 20 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 600 mW Part Status: Active Supplier Device Package: DO-220AA (SMP) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 9.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-220AA Tolerance: ±6% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
~~2.jpg "RS1PBHM3/84A") |
RS1PBHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PBHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PB-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PB-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PDHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PDHM3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS1PD-M3/85A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| V20DM120C-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 10A SMPD
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 120V 10A SMPD
Current - Reverse Leakage @ Vr: 600 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| V30DM120C-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARRAY SCHOTT 120V 15A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.68 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 2.06 EUR |
| V40DM120C-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 120V 20A SMPD
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SMPD
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA20-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA20-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA20L-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA20L-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA60-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA60-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA60L-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA60L-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA80-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G3SBA80-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA20-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA20-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA20L-M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA60-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA60-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA60L-M3/45 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G5SBA80-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| G5SBA80-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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| GBU4A-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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| GBU4A-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tray
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| GBU8A-M3/45 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| GBU8A-M3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Description: BRIDGE RECT 1PHASE 50V 3.9A GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| 1N6303A-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
Description: TVS DIODE 171VWM 274VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 5.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1N6384-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 17.1VC 1.5KE
Description: TVS DIODE 12VWM 17.1VC 1.5KE
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
| 1N4148WFL-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 150MA SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STD 75V 150MA SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4148WSFL-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPSMP13AHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 11.1VWM 18.2VC DO220AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESH1PBHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH1PBHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ESH1PB-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ESH1PCHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 150V 1A DO220AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| ESH1PCHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ESH1PC-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH1PDHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH1PD-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH2PBHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| ESH2PB-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH2PCHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH2PC-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESH2PD-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 2A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV12B-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV12B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 12.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV16B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17.3V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 17.3 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 17.3V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 17.3 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV18B-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.2V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 19.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 19.2V 600MW DO220AA
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 19.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV18B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.2V 600MW DO220AA
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 19.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.2V 600MW DO220AA
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 19.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV7.5B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV8.2B-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8.8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 8.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8.8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV8.2B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8.8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 8.8V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 8.8 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV9.1B-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.7V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.7V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PTV9.1B-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.7V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.7V 600MW DO220AA
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 600 mW
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PBHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PBHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PB-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PB-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PDHM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Description: DIODE GEN PURP 200V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PDHM3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Description: DIODE GEN PURP 200V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1PD-M3/85A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Description: DIODE GEN PURP 200V 1A DO220AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH