Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36582) > Seite 199 nach 610
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5260B-TR | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 43V 500MW DO35 |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT52M-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 46240 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV38-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 36842 Stücke: Lieferzeit 10-14 Tag (e) |
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BYW86-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 12827 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C2V7-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.7V 500MW DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 18532 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C5V1-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 39361 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX55C9V1-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V Qualification: AEC-Q101 |
auf Bestellung 39652 Stücke: Lieferzeit 10-14 Tag (e) |
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ICTE5-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 7.5VC 1.5KE Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 160A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 7.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SD103B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 20 V |
auf Bestellung 32033 Stücke: Lieferzeit 10-14 Tag (e) |
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VSB1545-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 15A P600 Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1290pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 45 V |
Produkt ist nicht verfügbar |
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BAS85-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6913 Stücke: Lieferzeit 10-14 Tag (e) |
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BZG03C200TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 200V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Obsolete Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
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LL4150GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 600MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 35907 Stücke: Lieferzeit 10-14 Tag (e) |
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MCL4148-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 75V 150MA MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Qualification: AEC-Q101 |
auf Bestellung 35217 Stücke: Lieferzeit 10-14 Tag (e) |
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TZM5231B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW SOD80 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
auf Bestellung 7974 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10BQ015-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 1A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 390pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 15 V |
auf Bestellung 81882 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10CWH02FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 4 µA @ 200 V |
auf Bestellung 5156 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-4ECH06-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 18380 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-4EGU06-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 27745 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-5ECH06-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 12993 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-MURD620CTTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZM4740A-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 10V 1W DO213AB |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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ZM4746A-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 1W DO213AB Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10925 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ23C5V6-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER ARRAY 5.6V SOT23 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Current - Reverse Leakage @ Vr: 100 nA @ 800 mV |
auf Bestellung 50273 Stücke: Lieferzeit 10-14 Tag (e) |
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BAQ333-TR | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 40V 200MA MICROMELF |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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BAQ35-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 140V 200MA SOD80 |
auf Bestellung 4030 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS386-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTT 50V 200MA MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 880pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
auf Bestellung 8572 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS40-02V-V-G-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 120MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
Produkt ist nicht verfügbar |
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BAS81-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 40V 30MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
auf Bestellung 4207 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54-02V-V-G-08 | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 30V 200MA SOD523 |
auf Bestellung 11629 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV102-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 150V 250MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 14730 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV203-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 250MA SOD80 Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
auf Bestellung 8907 Stücke: Lieferzeit 10-14 Tag (e) |
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BZG03C120TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 120V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V |
Produkt ist nicht verfügbar |
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BZG03C12TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 3W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V |
Produkt ist nicht verfügbar |
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BZG03C13TR | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 13V 1.25W DO214AC |
Produkt ist nicht verfügbar |
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BZG03C22TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Obsolete Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 16 V |
Produkt ist nicht verfügbar |
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BZG03C30TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 22 V |
Produkt ist nicht verfügbar |
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BZG03C68TR | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 68V 1.25W DO214AC |
Produkt ist nicht verfügbar |
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BZG05C10TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 7 V |
Produkt ist nicht verfügbar |
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BZG05C5V1TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Discontinued at Digi-Key Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V |
Produkt ist nicht verfügbar |
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BZG05C6V8TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1.25W DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V |
Produkt ist nicht verfügbar |
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BZM55B5V1-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: MicroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
auf Bestellung 46953 Stücke: Lieferzeit 10-14 Tag (e) |
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BZM55C10-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: MicroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V Qualification: AEC-Q101 |
auf Bestellung 13035 Stücke: Lieferzeit 10-14 Tag (e) |
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BZM55C6V2-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: MicroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 14941 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT55C15-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 500MW SOD80 Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V Qualification: AEC-Q101 |
auf Bestellung 22801 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT55C5V6-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW SOD80 Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 23492 Stücke: Lieferzeit 10-14 Tag (e) |
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GLL4744A-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1W MELF Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: MELF DO-213AB Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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GLL4753A-E3/96 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 36V 1W DO213AB |
auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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LL103B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 20 V |
auf Bestellung 22931 Stücke: Lieferzeit 10-14 Tag (e) |
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LL42-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
auf Bestellung 29548 Stücke: Lieferzeit 10-14 Tag (e) |
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LL43-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
auf Bestellung 13553 Stücke: Lieferzeit 10-14 Tag (e) |
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LS4150GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 50V 600MA SOD80 Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 8333 Stücke: Lieferzeit 10-14 Tag (e) |
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LS4448GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 75V 150MA SOD80 Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Qualification: AEC-Q101 |
auf Bestellung 32551 Stücke: Lieferzeit 10-14 Tag (e) |
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MCL103A-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTT 40V 200MA MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
Produkt ist nicht verfügbar |
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MCL4448-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 75V 150MA MICROMELF Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Qualification: AEC-Q101 |
auf Bestellung 45982 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBZ5245B-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 225MW SOT23 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
Produkt ist nicht verfügbar |
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MMSZ4701-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW SOD123 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 14 V Supplier Device Package: SOD-123 Power - Max: 500 mW |
auf Bestellung 25991 Stücke: Lieferzeit 10-14 Tag (e) |
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SML4739-E3/61 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 1W DO214AC Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7 V |
auf Bestellung 1230 Stücke: Lieferzeit 10-14 Tag (e) |
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SML4741A-E3/61 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 11V 1W DO214AC |
Produkt ist nicht verfügbar |
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SML4743A-E3/61 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 13V 1W DO214AC Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
auf Bestellung 31417 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5260B-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW DO35
Description: DIODE ZENER 43V 500MW DO35
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
58+ | 0.31 EUR |
106+ | 0.17 EUR |
BYT52M-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 46240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 0.99 EUR |
100+ | 0.69 EUR |
500+ | 0.57 EUR |
1000+ | 0.49 EUR |
2000+ | 0.44 EUR |
BYV38-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 36842 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.89 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.44 EUR |
2000+ | 0.39 EUR |
BYW86-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 12827 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.87 EUR |
12+ | 1.53 EUR |
100+ | 1.19 EUR |
500+ | 1.01 EUR |
1000+ | 0.82 EUR |
BZX55C2V7-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 18532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
69+ | 0.26 EUR |
141+ | 0.13 EUR |
500+ | 0.1 EUR |
1000+ | 0.073 EUR |
2000+ | 0.063 EUR |
5000+ | 0.059 EUR |
BZX55C5V1-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 39361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
69+ | 0.26 EUR |
140+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.073 EUR |
2000+ | 0.063 EUR |
5000+ | 0.059 EUR |
BZX55C9V1-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 39652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
69+ | 0.26 EUR |
140+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.073 EUR |
2000+ | 0.063 EUR |
5000+ | 0.059 EUR |
ICTE5-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 7.5VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 7.5VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 7.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
SD103B-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Description: DIODE SCHOTTKY 30V DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
auf Bestellung 32033 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
46+ | 0.39 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.095 EUR |
VSB1545-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Description: DIODE SCHOTTKY 45V 15A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
BAS85-GS18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 6913 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
40+ | 0.45 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
2000+ | 0.11 EUR |
BZG03C200TR3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE ZENER 200V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
LL4150GS18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 35907 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
80+ | 0.22 EUR |
148+ | 0.12 EUR |
500+ | 0.094 EUR |
1000+ | 0.065 EUR |
2000+ | 0.054 EUR |
5000+ | 0.051 EUR |
MCL4148-TR3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 35217 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
79+ | 0.22 EUR |
146+ | 0.12 EUR |
500+ | 0.095 EUR |
1000+ | 0.066 EUR |
2000+ | 0.055 EUR |
5000+ | 0.052 EUR |
TZM5231B-GS18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 7974 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
72+ | 0.24 EUR |
147+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.069 EUR |
2000+ | 0.06 EUR |
5000+ | 0.056 EUR |
VS-10BQ015-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 15 V
Description: DIODE SCHOTTKY 15V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 15 V
auf Bestellung 81882 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
35+ | 0.5 EUR |
100+ | 0.3 EUR |
500+ | 0.28 EUR |
1000+ | 0.19 EUR |
VS-10CWH02FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
auf Bestellung 5156 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
15+ | 1.25 EUR |
100+ | 0.97 EUR |
500+ | 0.82 EUR |
1000+ | 0.67 EUR |
VS-4ECH06-M3/9AT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 18380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.25 EUR |
17+ | 1.09 EUR |
100+ | 0.75 EUR |
500+ | 0.63 EUR |
1000+ | 0.53 EUR |
VS-4EGU06-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 27745 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
VS-5ECH06-M3/9AT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 12993 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
15+ | 1.21 EUR |
100+ | 0.94 EUR |
500+ | 0.8 EUR |
1000+ | 0.65 EUR |
VS-MURD620CTTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
16+ | 1.17 EUR |
100+ | 0.81 EUR |
500+ | 0.67 EUR |
1000+ | 0.57 EUR |
ZM4740A-GS18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1W DO213AB
Description: DIODE ZENER 10V 1W DO213AB
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)ZM4746A-GS18 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
2000+ | 0.17 EUR |
AZ23C5V6-E3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.6V SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Description: DIODE ZENER ARRAY 5.6V SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 50273 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.51 EUR |
52+ | 0.34 EUR |
105+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.098 EUR |
BAQ333-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 40V 200MA MICROMELF
Description: DIODE GP 40V 200MA MICROMELF
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)BAQ35-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 140V 200MA SOD80
Description: DIODE GEN PURP 140V 200MA SOD80
auf Bestellung 4030 Stücke:
Lieferzeit 10-14 Tag (e)BAS386-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 50V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTT 50V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 8572 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.5 EUR |
100+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
BAS40-02V-V-G-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE SCHOTTKY 40V 120MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
BAS81-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 40V 30MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Description: DIODE SCHOT 40V 30MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
45+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
BAT54-02V-V-G-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD523
Description: DIODE SCHOTTKY 30V 200MA SOD523
auf Bestellung 11629 Stücke:
Lieferzeit 10-14 Tag (e)BAV102-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 250MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE GP 150V 250MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 14730 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
77+ | 0.23 EUR |
157+ | 0.11 EUR |
500+ | 0.094 EUR |
1000+ | 0.065 EUR |
BAV203-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GP 200V 250MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 8907 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
76+ | 0.23 EUR |
155+ | 0.11 EUR |
500+ | 0.095 EUR |
1000+ | 0.066 EUR |
BZG03C120TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 120V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Description: DIODE ZENER 120V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Produkt ist nicht verfügbar
BZG03C12TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 3W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Description: DIODE ZENER 12V 3W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Produkt ist nicht verfügbar
BZG03C13TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.25W DO214AC
Description: DIODE ZENER 13V 1.25W DO214AC
Produkt ist nicht verfügbar
BZG03C22TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Description: DIODE ZENER 22V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
Produkt ist nicht verfügbar
BZG03C30TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Description: DIODE ZENER 30V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Produkt ist nicht verfügbar
BZG03C68TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1.25W DO214AC
Description: DIODE ZENER 68V 1.25W DO214AC
Produkt ist nicht verfügbar
BZG05C10TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Description: DIODE ZENER 10V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Produkt ist nicht verfügbar
BZG05C5V1TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Description: DIODE ZENER 5.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Produkt ist nicht verfügbar
BZG05C6V8TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Produkt ist nicht verfügbar
BZM55B5V1-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 5.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 46953 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
39+ | 0.46 EUR |
100+ | 0.24 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
BZM55C10-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 13035 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
59+ | 0.3 EUR |
120+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.085 EUR |
BZM55C6V2-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
auf Bestellung 14941 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
58+ | 0.31 EUR |
118+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.087 EUR |
BZT55C15-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 15V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 22801 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
76+ | 0.23 EUR |
156+ | 0.11 EUR |
500+ | 0.095 EUR |
1000+ | 0.066 EUR |
BZT55C5V6-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 23492 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
75+ | 0.24 EUR |
153+ | 0.12 EUR |
500+ | 0.096 EUR |
1000+ | 0.067 EUR |
GLL4744A-E3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.15 EUR |
GLL4753A-E3/96 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1W DO213AB
Description: DIODE ZENER 36V 1W DO213AB
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)LL103B-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
auf Bestellung 22931 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.49 EUR |
100+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
LL42-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 29548 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
34+ | 0.53 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
LL43-GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 13553 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
32+ | 0.56 EUR |
100+ | 0.28 EUR |
500+ | 0.23 EUR |
1000+ | 0.17 EUR |
LS4150GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GP 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 8333 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
81+ | 0.22 EUR |
150+ | 0.12 EUR |
500+ | 0.092 EUR |
1000+ | 0.064 EUR |
LS4448GS08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
Description: DIODE GP 75V 150MA SOD80
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 32551 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 0.26 EUR |
94+ | 0.19 EUR |
173+ | 0.1 EUR |
500+ | 0.08 EUR |
1000+ | 0.056 EUR |
MCL103A-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
MCL4448-TR |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 45982 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
73+ | 0.24 EUR |
151+ | 0.12 EUR |
500+ | 0.098 EUR |
1000+ | 0.068 EUR |
MMBZ5245B-E3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 225MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 225MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
MMSZ4701-E3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
auf Bestellung 25991 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
60+ | 0.3 EUR |
122+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.084 EUR |
SML4739-E3/61 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1W DO214AC
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Description: DIODE ZENER 9.1V 1W DO214AC
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
auf Bestellung 1230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
28+ | 0.64 EUR |
100+ | 0.44 EUR |
500+ | 0.35 EUR |
SML4741A-E3/61 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1W DO214AC
Description: DIODE ZENER 11V 1W DO214AC
Produkt ist nicht verfügbar
SML4743A-E3/61 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 13V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 31417 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
27+ | 0.67 EUR |
100+ | 0.47 EUR |
500+ | 0.36 EUR |