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SD103AWS-E3-08 SD103AWS-E3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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S1AHE3_A/I S1AHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 50V 1A DO214AC
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S1DHE3_A/H S1DHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
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S3AHE3_A/H S3AHE3_A/H Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
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S3AHE3_A/I S3AHE3_A/I Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S3MHE3_A/I S3MHE3_A/I Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5AHE3_A/H S5AHE3_A/H Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
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S5AHE3_A/I S5AHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5JHE3_A/I S5JHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5MHE3_A/H S5MHE3_A/H Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5MHE3_A/I S5MHE3_A/I Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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MPG06AHE3_A/54 MPG06AHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06%28A-M%29.pdf Description: DIODE STANDARD 50V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MPG06BHE3_A/54 MPG06BHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 100V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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MPG06BHE3_A/73 MPG06BHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 100V 1A MPG06
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MPG06GHE3_A/73 MPG06GHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 400V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
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MPG06JHE3_A/73 MPG06JHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
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MPG06KHE3_A/54 MPG06KHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MPG06KHE3_A/73 MPG06KHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MPG06MHE3_A/54 MPG06MHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MPG06MHE3_A/73 MPG06MHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RMPG06BHE3_A/54 RMPG06BHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 100V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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RMPG06DHE3_A/54 RMPG06DHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 200V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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RMPG06DHE3_A/73 RMPG06DHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE GEN PURP 200V 1A MPG06
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RMPG06GHE3_A/54 RMPG06GHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 400V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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RMPG06GHE3_A/73 RMPG06GHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 400V 1A MPG06
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RMPG06JHE3_A/73 RMPG06JHE3_A/73 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE GEN PURP 600V 1A MPG06
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RMPG06KHE3_A/54 RMPG06KHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 800V 1A MPG06
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
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P6SMB510AHE3_A/H P6SMB510AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB510AHE3_A/I P6SMB510AHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MPG06DHE3_A/54 MPG06DHE3_A/54 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 200V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-113CNQ100ASLPBF VS-113CNQ100ASLPBF Vishay General Semiconductor - Diodes Division VS-113CNQ100APbF.pdf Description: DIODE ARR SCHOTT 100V 55A D618SL
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-10CTQ150SPBF VS-10CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-10CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Produkt ist nicht verfügbar
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VS-20CTQ150SPBF VS-20CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-20CTQ150SPBF%2C-1PBF.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20ETF02SPBF VS-20ETF02SPBF Vishay General Semiconductor - Diodes Division VS-20ETF..SPbF_Series.pdf Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20ETF12SPBF VS-20ETF12SPBF Vishay General Semiconductor - Diodes Division VS-20ETFxxSPBF.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-30CTH02SPBF VS-30CTH02SPBF Vishay General Semiconductor - Diodes Division VS-30CTH02(SPbF,PbF).pdf Description: DIODE ARRAY GP 200V 15A D2PAK
Produkt ist nicht verfügbar
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VS-40CTQ150SPBF VS-40CTQ150SPBF Vishay General Semiconductor - Diodes Division VS-40CTQ150%28SPBF%2C-1PBF%29.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-82CNQ030ASLPBF VS-82CNQ030ASLPBF Vishay General Semiconductor - Diodes Division VS-82CNQ030APbF.pdf Description: DIODE ARR SCHOTT 30V 40A D618SL
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-83CNQ100ASLPBF VS-83CNQ100ASLPBF Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARR SCHOTT 100V 40A D618SL
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-MBRB1045PBF VS-MBRB1045PBF Vishay General Semiconductor - Diodes Division VS-MBRB10%2835%2C45%29PbF.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20CTQ150STRLPBF VS-20CTQ150STRLPBF Vishay General Semiconductor - Diodes Division VS-20CTQ150SPBF%2C-1PBF.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20ETF10STRRPBF VS-20ETF10STRRPBF Vishay General Semiconductor - Diodes Division vs-20etf08s-m3.pdf Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
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VSSA310S-E3/5AT VSSA310S-E3/5AT Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S1JHE3_A/H S1JHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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SE20AFBHM3/6A SE20AFBHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 100V 2A DO221AC
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SE20AFJHM3/6A SE20AFJHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 600V 2A DO221AC
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SE30AFBHM3/6A SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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SE30AFJHM3/6A SE30AFJHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE STANDARD 600V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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V10PL45-M3/86A V10PL45-M3/86A Vishay General Semiconductor - Diodes Division v10pl45-m3.pdf Description: DIODE SCHOTTKY 45V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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V15P45S-M3/86A V15P45S-M3/86A Vishay General Semiconductor - Diodes Division v15p45s-m3.pdf Description: DIODE ARRAY SCHOT 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
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VSSA210-E3/61T VSSA210-E3/61T Vishay General Semiconductor - Diodes Division vssa210.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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VSSB310-E3/52T VSSB310-E3/52T Vishay General Semiconductor - Diodes Division vssb310-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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VSSB410S-E3/52T VSSB410S-E3/52T Vishay General Semiconductor - Diodes Division vssb410s-e3.pdf Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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VSSA310S-E3/5AT VSSA310S-E3/5AT Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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S1JHE3_A/H S1JHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SE20AFBHM3/6A SE20AFBHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 100V 2A DO221AC
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SE20AFJHM3/6A SE20AFJHM3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 600V 2A DO221AC
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SE30AFBHM3/6A SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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500+0.25 EUR
1000+0.23 EUR
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SE30AFJHM3/6A SE30AFJHM3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE STANDARD 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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70+0.25 EUR
100+0.2 EUR
500+0.18 EUR
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V10PL45-M3/86A V10PL45-M3/86A Vishay General Semiconductor - Diodes Division v10pl45-m3.pdf Description: DIODE SCHOTTKY 45V 6A TO277A
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
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SD103AWS-E3-08 sd103aws_sd103bws_sd103cws.pdf
SD103AWS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 144200 Stücke:
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24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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S1AHE3_A/I s1.pdf
S1AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Produkt ist nicht verfügbar
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S1DHE3_A/H s1.pdf
S1DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
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AnzahlPreis
1800+0.1 EUR
3600+0.084 EUR
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S3AHE3_A/H s3a.pdf
S3AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Produkt ist nicht verfügbar
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S3AHE3_A/I s3a.pdf
S3AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S3MHE3_A/I s3a.pdf
S3MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S5AHE3_A/H s5a.pdf
S5AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Produkt ist nicht verfügbar
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S5AHE3_A/I s5a.pdf
S5AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S5JHE3_A/I s5a.pdf
S5JHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S5MHE3_A/H s5a.pdf
S5MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 850 Stücke:
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AnzahlPreis
850+0.32 EUR
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S5MHE3_A/I s5a.pdf
S5MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3500+0.29 EUR
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MPG06AHE3_A/54 MPG06%28A-M%29.pdf
MPG06AHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MPG06BHE3_A/54 MPG06(A-M).pdf
MPG06BHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MPG06BHE3_A/73 MPG06(A-M).pdf
MPG06BHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MPG06
Produkt ist nicht verfügbar
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MPG06GHE3_A/73 MPG06(A-M).pdf
MPG06GHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MPG06JHE3_A/73 MPG06(A-M).pdf
MPG06JHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MPG06KHE3_A/54 MPG06(A-M).pdf
MPG06KHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MPG06KHE3_A/73 MPG06(A-M).pdf
MPG06KHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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MPG06MHE3_A/54 MPG06(A-M).pdf
MPG06MHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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MPG06MHE3_A/73 MPG06(A-M).pdf
MPG06MHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Tape & Box (TB)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RMPG06BHE3_A/54 rmpg06.pdf
RMPG06BHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMPG06DHE3_A/54 rmpg06.pdf
RMPG06DHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMPG06DHE3_A/73 rmpg06.pdf
RMPG06DHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06
Produkt ist nicht verfügbar
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RMPG06GHE3_A/54 rmpg06.pdf
RMPG06GHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A MPG06
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RMPG06GHE3_A/73 rmpg06.pdf
RMPG06GHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A MPG06
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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RMPG06JHE3_A/73 rmpg06.pdf
RMPG06JHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MPG06
Produkt ist nicht verfügbar
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RMPG06KHE3_A/54 rmpg06.pdf
RMPG06KHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A MPG06
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 16500 Stücke
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P6SMB510AHE3_A/H p6smb.pdf
P6SMB510AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB510AHE3_A/I p6smb.pdf
P6SMB510AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MPG06DHE3_A/54 MPG06(A-M).pdf
MPG06DHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 22000 Stücke
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VS-113CNQ100ASLPBF VS-113CNQ100APbF.pdf
VS-113CNQ100ASLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 55A D618SL
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-10CTQ150SPBF VS-10CTQ150%28SPBF%2C-1PBF%29.pdf
VS-10CTQ150SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Produkt ist nicht verfügbar
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VS-20CTQ150SPBF VS-20CTQ150SPBF%2C-1PBF.pdf
VS-20CTQ150SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20ETF02SPBF VS-20ETF..SPbF_Series.pdf
VS-20ETF02SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20ETF12SPBF VS-20ETFxxSPBF.pdf
VS-20ETF12SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-30CTH02SPBF VS-30CTH02(SPbF,PbF).pdf
VS-30CTH02SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A D2PAK
Produkt ist nicht verfügbar
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VS-40CTQ150SPBF VS-40CTQ150%28SPBF%2C-1PBF%29.pdf
VS-40CTQ150SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-82CNQ030ASLPBF VS-82CNQ030APbF.pdf
VS-82CNQ030ASLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 40A D618SL
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-83CNQ100ASLPBF VS-83CNQ080A,100A.pdf
VS-83CNQ100ASLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SL
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D-61-8-SL
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: D-61-8-SL
Packaging: Tube
Produkt ist nicht verfügbar
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VS-MBRB1045PBF VS-MBRB10%2835%2C45%29PbF.pdf
VS-MBRB1045PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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VS-20CTQ150STRLPBF VS-20CTQ150SPBF%2C-1PBF.pdf
VS-20CTQ150STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 10A TO263AB
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-20ETF10STRRPBF vs-20etf08s-m3.pdf
VS-20ETF10STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
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VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7500+0.15 EUR
Mindestbestellmenge: 7500 Stücke
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S1JHE3_A/H s1.pdf
S1JHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 57600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+0.14 EUR
3600+0.12 EUR
5400+0.11 EUR
9000+0.099 EUR
45000+0.097 EUR
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SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
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SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3500 Stücke
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SE30AFBHM3/6A se30afb.pdf
SE30AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3500+0.21 EUR
7000+0.2 EUR
10500+0.19 EUR
Mindestbestellmenge: 3500 Stücke
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SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 66500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3500+0.17 EUR
7000+0.16 EUR
Mindestbestellmenge: 3500 Stücke
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V10PL45-M3/86A v10pl45-m3.pdf
V10PL45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.66 EUR
Mindestbestellmenge: 1500 Stücke
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V15P45S-M3/86A v15p45s-m3.pdf
V15P45S-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
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VSSA210-E3/61T vssa210.pdf
VSSA210-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+0.16 EUR
3600+0.15 EUR
Mindestbestellmenge: 1800 Stücke
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VSSB310-E3/52T vssb310-e3.pdf
VSSB310-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
750+0.35 EUR
1500+0.32 EUR
2250+0.3 EUR
3750+0.28 EUR
5250+0.27 EUR
7500+0.26 EUR
Mindestbestellmenge: 750 Stücke
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VSSB410S-E3/52T vssb410s-e3.pdf
VSSB410S-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
750+0.19 EUR
Mindestbestellmenge: 750 Stücke
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VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 27610 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
55+0.33 EUR
100+0.26 EUR
500+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 46 Stücke
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S1JHE3_A/H s1.pdf
S1JHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 61739 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
Mindestbestellmenge: 27 Stücke
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SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
auf Bestellung 1753 Stücke:
Lieferzeit 10-14 Tag (e)
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SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
auf Bestellung 5342 Stücke:
Lieferzeit 10-14 Tag (e)
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SE30AFBHM3/6A se30afb.pdf
SE30AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 18440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
38+0.48 EUR
57+0.31 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 38 Stücke
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SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 68570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
70+0.25 EUR
100+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 46 Stücke
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V10PL45-M3/86A v10pl45-m3.pdf
V10PL45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
auf Bestellung 11333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
Mindestbestellmenge: 22 Stücke
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