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1N4758A-TAP 1N4758A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 56V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V
Grade: Automotive
Qualification: AEC-Q101
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1N4759A-TAP 1N4759A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 62V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Grade: Automotive
Qualification: AEC-Q101
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15000+0.21 EUR
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1N4761A-TAP 1N4761A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 75V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
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10000+0.19 EUR
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1N4762A-TAP 1N4762A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 82V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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1N4763A-TAP 1N4763A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 91V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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1N4764A-TAP 1N4764A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 100V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4933GP-M3/73 1N4933GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 50V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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1N4934GPE-E3/91 1N4934GPE-E3/91 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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1N4934GPEHE3/91 1N4934GPEHE3/91 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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1N4934GP-M3/73 1N4934GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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1N4936GP-M3/73 1N4936GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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1N4937-E3/53 1N4937-E3/53 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N4937E-E3/53 1N4937E-E3/53 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N4937GPE-E3/91 1N4937GPE-E3/91 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N4937GPEHE3/91 1N4937GPEHE3/91 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N4937GP-M3/73 1N4937GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N4944GP-M3/73 1N4944GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1N4947GP-E3/53 1N4947GP-E3/53 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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1N4947GPHM3/73 1N4947GPHM3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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1N4947GP-M3/73 1N4947GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
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1N4948GP-M3/73 1N4948GP-M3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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1N5059TAP 1N5059TAP Vishay General Semiconductor - Diodes Division 1n5059.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1N5061TAP 1N5061TAP Vishay General Semiconductor - Diodes Division 1n5059.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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1N5062TAP 1N5062TAP Vishay General Semiconductor - Diodes Division 1n5059.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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1N5221B-TAP 1N5221B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.4V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N5221C-TAP 1N5221C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
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1N5222C-TAP 1N5222C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5223C-TAP 1N5223C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
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1N5224B-TAP 1N5224B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.8 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N5224C-TAP 1N5224C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.8V 500MW DO35
Produkt ist nicht verfügbar
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1N5225B-TAP 1N5225B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N5225C-TAP 1N5225C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5226B-TAP 1N5226B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Produkt ist nicht verfügbar
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1N5226C-TAP 1N5226C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5227B-TAP 1N5227B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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1N5227C-TAP 1N5227C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar
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1N5228B-TAP 1N5228B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.9V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N5228C-TAP 1N5228C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.9V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5229B-TAP 1N5229B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5229C-TAP 1N5229C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N5230B-TAP 1N5230B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 20000 Stücke:
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1N5230C-TAP 1N5230C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5231B-TAP 1N5231B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5231C-TAP 1N5231C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5233C-TAP 1N5233C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Produkt ist nicht verfügbar
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1N5234B-TAP 1N5234B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5234C-TAP 1N5234C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N5235B-TAP 1N5235B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5235C-TAP 1N5235C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5236B-TAP 1N5236B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
auf Bestellung 10000 Stücke:
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10000+0.032 EUR
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1N5236C-TAP 1N5236C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
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1N5237B-TAP 1N5237B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 8.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5237C-TAP 1N5237C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 8.2V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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1N5238C-TAP 1N5238C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 8.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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1N5239B-TAP 1N5239B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5239C-TAP 1N5239C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N5240B-TAP 1N5240B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
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1N5240C-TAP 1N5240C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5241B-TAP 1N5241B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 11V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N5241C-TAP 1N5241C-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 11V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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1N4758A-TAP 1n4728a.pdf
1N4758A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.25 EUR
10000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 5000 Stücke
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1N4759A-TAP 1n4728a.pdf
1N4759A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.24 EUR
10000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 5000 Stücke
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1N4761A-TAP 1n4728a.pdf
1N4761A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.24 EUR
10000+0.19 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N4762A-TAP 1n4728a.pdf
1N4762A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Obsolete
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4763A-TAP 1n4728a.pdf
1N4763A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4764A-TAP 1n4728a.pdf
1N4764A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4933GP-M3/73 1n4933gp.pdf
1N4933GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4934GPE-E3/91 1n4933gp.pdf
1N4934GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4934GPEHE3/91 1n4933gp.pdf
1N4934GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4934GP-M3/73 1n4933gp.pdf
1N4934GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4936GP-M3/73 1n4933gp.pdf
1N4936GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/53 1n4933.pdf
1N4937-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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1N4937E-E3/53 1n4933.pdf
1N4937E-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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1N4937GPE-E3/91 1n4933gp.pdf
1N4937GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937GPEHE3/91 1n4933gp.pdf
1N4937GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937GP-M3/73 1n4933gp.pdf
1N4937GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4944GP-M3/73 1n4942gp.pdf
1N4944GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4947GP-E3/53 1n4942gp.pdf
1N4947GP-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4947GPHM3/73 1n4933gp.pdf
1N4947GPHM3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4947GP-M3/73 1n4942gp.pdf
1N4947GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4948GP-M3/73 1n4942gp.pdf
1N4948GP-M3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5059TAP 1n5059.pdf
1N5059TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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1N5061TAP 1n5059.pdf
1N5061TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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1N5062TAP 1n5059.pdf
1N5062TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.99 EUR
10000+0.93 EUR
Mindestbestellmenge: 5000 Stücke
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1N5221B-TAP 1n5221.pdf
1N5221B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.038 EUR
Mindestbestellmenge: 10000 Stücke
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1N5221C-TAP 1n5221.pdf
1N5221C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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1N5222C-TAP 1n5221.pdf
1N5222C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5223C-TAP 1n5221.pdf
1N5223C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
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1N5224B-TAP 1n5221.pdf
1N5224B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.8 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
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1N5224C-TAP 1n5221.pdf
1N5224C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.8V 500MW DO35
Produkt ist nicht verfügbar
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1N5225B-TAP 1n5221.pdf
1N5225B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N5225C-TAP 1n5221.pdf
1N5225C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5226B-TAP 1n5221.pdf
1N5226B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Produkt ist nicht verfügbar
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1N5226C-TAP 1n5221.pdf
1N5226C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5227B-TAP 1n5221.pdf
1N5227B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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AnzahlPreis
10000+0.17 EUR
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1N5227C-TAP 1n5221.pdf
1N5227C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar
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1N5228B-TAP 1n5221.pdf
1N5228B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 10000 Stücke:
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AnzahlPreis
10000+0.035 EUR
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1N5228C-TAP 1n5221.pdf
1N5228C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5229B-TAP 1n5221.pdf
1N5229B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.033 EUR
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1N5229C-TAP 1n5221.pdf
1N5229C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5230B-TAP 1n5221.pdf
1N5230B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.033 EUR
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1N5230C-TAP 1n5221.pdf
1N5230C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5231B-TAP 1n5221.pdf
1N5231B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5231C-TAP 1n5221.pdf
1N5231C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5233C-TAP 1n5221.pdf
1N5233C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Produkt ist nicht verfügbar
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1N5234B-TAP 1n5221.pdf
1N5234B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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1N5234C-TAP 1n5221.pdf
1N5234C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5235B-TAP 1n5221.pdf
1N5235B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5235C-TAP 1n5221.pdf
1N5235C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N5236B-TAP 1n5221.pdf
1N5236B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.032 EUR
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1N5236C-TAP 1n5221.pdf
1N5236C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
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1N5237B-TAP 1n5221.pdf
1N5237B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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1N5237C-TAP 1n5221.pdf
1N5237C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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1N5238C-TAP 1n5221.pdf
1N5238C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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1N5239B-TAP 1n5221.pdf
1N5239B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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1N5239C-TAP 1n5221.pdf
1N5239C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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1N5240B-TAP 1n5221.pdf
1N5240B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 10000 Stücke
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1N5240C-TAP 1n5221.pdf
1N5240C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5241B-TAP 1n5221.pdf
1N5241B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5241C-TAP 1n5221.pdf
1N5241C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO35
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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