Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41162) > Seite 220 nach 687
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BY228-15TAP | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 1200V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BY228GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 1500V 2.5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BY228TAP | Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 1500V 3A SOD64Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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BY251P-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO201AD Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery > 500ns, > 2A (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BY268TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1400V 800MA SOD57 Current - Reverse Leakage @ Vr: 2 µA @ 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Voltage - DC Reverse (Vr) (Max): 1400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 800mA Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BY448TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 2A SOD57 Current - Reverse Leakage @ Vr: 3 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1500 V Part Status: Active Operating Temperature - Junction: 140°C (Max) Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Technology: Avalanche Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BY458TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.2KV 2A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BY527TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Voltage - DC Reverse (Vr) (Max): 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYM36A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Technology: Avalanche Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYM36B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Current - Average Rectified (Io): 3A Technology: Avalanche Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYM36D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.9A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 2.9A Technology: Avalanche Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYM36E-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2.9A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 2.9A Technology: Avalanche Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT51K-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.5A SOD57 Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.5A Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 1.4A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 1.4A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.4A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52G-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.4A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52J-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1.4A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52K-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A SOD57 Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT52M-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.4A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT53D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.9A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.9A Technology: Avalanche Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT53G-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.9A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.9A Technology: Avalanche Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT54D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1.25A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1.25A Technology: Avalanche Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3A SOD64 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56G-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56J-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56K-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT56M-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYT62-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 2.4KV 350MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Avalanche Current - Average Rectified (Io): 350mA Supplier Device Package: SOD-57 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 2400 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYT78-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV12-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 1.5A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV13-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1.5A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV14-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1.5A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV15-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.5A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV26A-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 1A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV26B-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV26D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV27-050-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 55V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 55 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 55 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV27-150-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 165V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 165 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 165 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV27-600-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV28-050-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3.5A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV28-100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3.5A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV28-150-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 150V 3.5A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 3.5A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV37-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV38-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV98-100-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV98-150-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 150V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV98-200-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYV98-50-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 4A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW172D-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW172F-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 300V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW172G-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW178-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Technology: Avalanche Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW32-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW33-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 300V 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW35-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 500V 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW36-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Technology: Avalanche Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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BYW52-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BY228-15TAP |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.96 EUR |
| 5000+ | 1.89 EUR |
| BY228GP-E3/73 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1500V 2.5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE STD 1500V 2.5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BY228TAP |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.96 EUR |
| 5000+ | 1.89 EUR |
| BY251P-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery > 500ns, > 2A (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery > 500ns, > 2A (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BY268TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1400V 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE STANDARD 1400V 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BY448TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 1500V 2A SOD57
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.33 EUR |
| BY458TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.2KV 2A SOD57
Description: DIODE AVALANCHE 1.2KV 2A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BY527TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Description: DIODE AVALANCHE 800V 2A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYM36A-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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Stück im Wert von UAH
| BYM36B-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Description: DIODE AVALANCHE 400V 3A SOD64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYM36D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 800V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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Stück im Wert von UAH
| BYM36E-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 1000V 2.9A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 2.9A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.71 EUR |
| 5000+ | 0.68 EUR |
| BYT51K-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 800V 1.5A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT52A-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 50V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT52B-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 100V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYT52D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT52G-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.4A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 1.4A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYT52J-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT52K-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A SOD57
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Description: DIODE AVALANCHE 800V 1.4A SOD57
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Produkt ist nicht verfügbar
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| BYT52M-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BYT53D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.9A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.9A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 1.9A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.9A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT53G-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.9A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.9A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 400V 1.9A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.9A
Technology: Avalanche
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT54D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.25A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.25A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 1.25A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.25A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| BYT56A-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3A SOD64
Description: DIODE AVALANCHE 50V 3A SOD64
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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Stück im Wert von UAH
| BYT56B-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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| BYT56D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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| BYT56G-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Description: DIODE AVALANCHE 400V 3A SOD64
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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Stück im Wert von UAH
| BYT56J-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Description: DIODE AVALANCHE 600V 3A SOD64
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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Stück im Wert von UAH
| BYT56K-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYT56M-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYT62-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.82 EUR |
| 10000+ | 0.78 EUR |
| BYT78-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.76 EUR |
| 5000+ | 0.72 EUR |
| 12500+ | 0.69 EUR |
| BYV12-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.5A SOD57
Description: DIODE AVALANCHE 100V 1.5A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV13-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A SOD57
Description: DIODE AVALANCHE 400V 1.5A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV14-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A SOD57
Description: DIODE AVALANCHE 600V 1.5A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV15-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Description: DIODE AVALANCHE 800V 1.5A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV26A-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.98 EUR |
| 10000+ | 0.93 EUR |
| BYV26B-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.98 EUR |
| 10000+ | 0.93 EUR |
| BYV26D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.02 EUR |
| 10000+ | 0.97 EUR |
| BYV27-050-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV27-150-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.15 EUR |
| BYV27-600-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.22 EUR |
| BYV28-050-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV28-100-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV28-150-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 2.03 EUR |
| BYV37-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Description: DIODE AVALANCHE 800V 2A SOD57
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV38-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.35 EUR |
| 10000+ | 0.32 EUR |
| 25000+ | 0.31 EUR |
| BYV98-100-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV98-150-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV98-200-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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| BYV98-50-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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| BYW172D-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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| BYW172F-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
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| BYW172G-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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| BYW178-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 800V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Technology: Avalanche
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| BYW32-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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| BYW33-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 300V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| BYW35-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 2A
Description: DIODE AVALANCHE 500V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar
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| BYW36-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| BYW52-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Description: DIODE AVALANCHE 200V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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